CN100409101C - 厚膜型光致抗蚀剂及其使用方法 - Google Patents

厚膜型光致抗蚀剂及其使用方法 Download PDF

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Publication number
CN100409101C
CN100409101C CNB02811695XA CN02811695A CN100409101C CN 100409101 C CN100409101 C CN 100409101C CN B02811695X A CNB02811695X A CN B02811695XA CN 02811695 A CN02811695 A CN 02811695A CN 100409101 C CN100409101 C CN 100409101C
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CN
China
Prior art keywords
coating
photoresist
groups
photoresist coating
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB02811695XA
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English (en)
Chinese (zh)
Other versions
CN1514956A (zh
Inventor
J·W·撒克里
J·M·莫利
G·G·滕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
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Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of CN1514956A publication Critical patent/CN1514956A/zh
Application granted granted Critical
Publication of CN100409101C publication Critical patent/CN100409101C/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB02811695XA 2001-05-11 2002-05-10 厚膜型光致抗蚀剂及其使用方法 Expired - Lifetime CN100409101C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29044501P 2001-05-11 2001-05-11
US60/290,445 2001-05-11

Publications (2)

Publication Number Publication Date
CN1514956A CN1514956A (zh) 2004-07-21
CN100409101C true CN100409101C (zh) 2008-08-06

Family

ID=23116028

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB02811695XA Expired - Lifetime CN100409101C (zh) 2001-05-11 2002-05-10 厚膜型光致抗蚀剂及其使用方法

Country Status (6)

Country Link
US (2) US6800422B2 (enExample)
EP (1) EP1393131A4 (enExample)
JP (1) JP4297408B2 (enExample)
KR (2) KR20090036153A (enExample)
CN (1) CN100409101C (enExample)
WO (1) WO2002093262A1 (enExample)

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WO2004092831A2 (en) * 2003-04-09 2004-10-28 Rohm And Haas, Electronic Materials, L.L.C. Photoresists and methods for use thereof
US7927778B2 (en) 2004-12-29 2011-04-19 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
US7951522B2 (en) 2004-12-29 2011-05-31 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal
JP4499591B2 (ja) * 2005-03-23 2010-07-07 東京応化工業株式会社 厚膜形成用化学増幅型ポジ型ホトレジスト組成物
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US20070105040A1 (en) * 2005-11-10 2007-05-10 Toukhy Medhat A Developable undercoating composition for thick photoresist layers
US20070166640A1 (en) * 2006-01-19 2007-07-19 Yayi Wei Defect reduction in immersion lithography
US7601482B2 (en) * 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
US7479463B2 (en) * 2007-03-09 2009-01-20 Tokyo Electron Limited Method for heating a chemically amplified resist layer carried on a rotating substrate
US20100151118A1 (en) * 2008-12-17 2010-06-17 Eastman Chemical Company Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
JP5783687B2 (ja) * 2009-06-23 2015-09-24 住友化学株式会社 樹脂及びレジスト組成物
TWI477911B (zh) * 2009-12-15 2015-03-21 羅門哈斯電子材料有限公司 光阻劑及其使用方法
KR101007039B1 (ko) * 2010-07-27 2011-01-12 한국기계연구원 스핀들에 자유도를 부여한 심압대 및 이를 구비한 롤 금형 가공기
KR101841000B1 (ko) * 2010-07-28 2018-03-22 스미또모 가가꾸 가부시키가이샤 포토레지스트 조성물
JP6195692B2 (ja) 2010-08-30 2017-09-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法並びに新規化合物及び樹脂
JP5829941B2 (ja) 2011-02-25 2015-12-09 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5947051B2 (ja) 2011-02-25 2016-07-06 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5898521B2 (ja) 2011-02-25 2016-04-06 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5829939B2 (ja) 2011-02-25 2015-12-09 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5898520B2 (ja) 2011-02-25 2016-04-06 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5829940B2 (ja) 2011-02-25 2015-12-09 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6034025B2 (ja) 2011-02-25 2016-11-30 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5947053B2 (ja) 2011-02-25 2016-07-06 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6034026B2 (ja) 2011-02-25 2016-11-30 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5912912B2 (ja) 2011-07-19 2016-04-27 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6013797B2 (ja) 2011-07-19 2016-10-25 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6189020B2 (ja) 2011-07-19 2017-08-30 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6013799B2 (ja) 2011-07-19 2016-10-25 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5886696B2 (ja) 2011-07-19 2016-03-16 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
WO2013125861A1 (ko) 2012-02-20 2013-08-29 주식회사 노리코리아 지식 유닛에 기초하여 교육 서비스를 제공하기 위한 방법, 시스템 및 컴퓨터 판독 가능한 기록 매체
US9012126B2 (en) 2012-06-15 2015-04-21 Az Electronic Materials (Luxembourg) S.A.R.L. Positive photosensitive material
US8906594B2 (en) 2012-06-15 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working thick film photoresist
JP6292059B2 (ja) 2013-08-13 2018-03-14 Jsr株式会社 基板の加工方法
US9354390B2 (en) 2013-12-11 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing
TWI731961B (zh) 2016-04-19 2021-07-01 德商馬克專利公司 正向感光材料及形成正向凸紋影像之方法
CN107664921B (zh) * 2016-07-29 2019-12-24 上海微电子装备（集团）股份有限公司 可调平的版库设备
SG11202100517VA (en) 2018-09-05 2021-02-25 Merck Patent Gmbh Positive working photosensitive material

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US4978419A (en) * 1986-10-09 1990-12-18 International Business Machines Corporation Process for defining vias through silicon nitride and polyamide
US5879856A (en) * 1995-12-05 1999-03-09 Shipley Company, L.L.C. Chemically amplified positive photoresists
US5882844A (en) * 1996-04-02 1999-03-16 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition
US5964951A (en) * 1996-12-26 1999-10-12 Clariant International Ltd. Rinsing solution

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US5302490A (en) 1991-10-21 1994-04-12 Shipley Company Inc. Radiation sensitive compositions comprising blends of an aliphatic novolak resin and an aromatic novolak resin
JP2688168B2 (ja) * 1992-11-03 1997-12-08 インターナショナル・ビジネス・マシーンズ・コーポレイション フォトレジストイメージ形成プロセス
JPH06186754A (ja) * 1992-12-17 1994-07-08 Mitsubishi Electric Corp 微細レジストパターンの形成方法
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DE19546140C2 (de) * 1995-11-28 1998-08-06 Atotech Deutschland Gmbh Photoempfindliche Zusammensetzung
US5861231A (en) 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
US6187504B1 (en) * 1996-12-19 2001-02-13 Jsr Corporation Radiation sensitive resin composition
US6103445A (en) * 1997-03-07 2000-08-15 Board Of Regents, The University Of Texas System Photoresist compositions comprising norbornene derivative polymers with acid labile groups
JP3993692B2 (ja) * 1997-11-28 2007-10-17 関西ペイント株式会社 レジストパターン形成方法
US6410213B1 (en) * 1998-06-09 2002-06-25 Corning Incorporated Method for making optical microstructures having profile heights exceeding fifteen microns
JP4144957B2 (ja) * 1999-01-22 2008-09-03 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
TWI277830B (en) * 1999-01-28 2007-04-01 Sumitomo Chemical Co Resist composition
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US4978419A (en) * 1986-10-09 1990-12-18 International Business Machines Corporation Process for defining vias through silicon nitride and polyamide
US5879856A (en) * 1995-12-05 1999-03-09 Shipley Company, L.L.C. Chemically amplified positive photoresists
US5882844A (en) * 1996-04-02 1999-03-16 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition
US5964951A (en) * 1996-12-26 1999-10-12 Clariant International Ltd. Rinsing solution

Also Published As

Publication number Publication date
EP1393131A1 (en) 2004-03-03
WO2002093262A1 (en) 2002-11-21
JP2004526212A (ja) 2004-08-26
CN1514956A (zh) 2004-07-21
KR20090036153A (ko) 2009-04-13
US20050019705A1 (en) 2005-01-27
US6800422B2 (en) 2004-10-05
EP1393131A4 (en) 2006-08-09
KR20040029977A (ko) 2004-04-08
US20030027086A1 (en) 2003-02-06
JP4297408B2 (ja) 2009-07-15

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Granted publication date: 20080806