KR20090036153A - 후막 포토레지스트 및 그의 사용방법 - Google Patents
후막 포토레지스트 및 그의 사용방법 Download PDFInfo
- Publication number
- KR20090036153A KR20090036153A KR1020097006655A KR20097006655A KR20090036153A KR 20090036153 A KR20090036153 A KR 20090036153A KR 1020097006655 A KR1020097006655 A KR 1020097006655A KR 20097006655 A KR20097006655 A KR 20097006655A KR 20090036153 A KR20090036153 A KR 20090036153A
- Authority
- KR
- South Korea
- Prior art keywords
- groups
- resist
- preferred
- substituted
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title abstract description 22
- 239000000203 mixture Substances 0.000 claims abstract description 27
- 229920005989 resin Polymers 0.000 claims description 37
- 239000011347 resin Substances 0.000 claims description 37
- 150000001875 compounds Chemical class 0.000 claims description 29
- 239000004014 plasticizer Substances 0.000 claims description 7
- 239000011247 coating layer Substances 0.000 abstract description 16
- 239000010410 layer Substances 0.000 abstract description 15
- 229920000642 polymer Polymers 0.000 description 39
- 125000000217 alkyl group Chemical group 0.000 description 24
- -1 methacrylates) Chemical class 0.000 description 19
- 125000004432 carbon atom Chemical group C* 0.000 description 18
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 229920001577 copolymer Polymers 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 239000001257 hydrogen Substances 0.000 description 14
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 14
- 239000002253 acid Substances 0.000 description 12
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 12
- 230000005855 radiation Effects 0.000 description 12
- 125000002252 acyl group Chemical group 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 125000003118 aryl group Chemical group 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 125000001072 heteroaryl group Chemical group 0.000 description 8
- 230000003213 activating effect Effects 0.000 description 7
- 125000003342 alkenyl group Chemical group 0.000 description 7
- 125000003545 alkoxy group Chemical group 0.000 description 7
- 229910052801 chlorine Inorganic materials 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 7
- 150000002367 halogens Chemical class 0.000 description 7
- 125000001624 naphthyl group Chemical group 0.000 description 7
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 7
- 239000005011 phenolic resin Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 229910052794 bromium Inorganic materials 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 125000002723 alicyclic group Chemical group 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 125000004093 cyano group Chemical group *C#N 0.000 description 5
- 125000005842 heteroatom Chemical group 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229920001568 phenolic resin Polymers 0.000 description 5
- 229920001223 polyethylene glycol Polymers 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 4
- 125000000304 alkynyl group Chemical group 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000005250 alkyl acrylate group Chemical group 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 125000006575 electron-withdrawing group Chemical group 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- MGFYSGNNHQQTJW-UHFFFAOYSA-N iodonium Chemical compound [IH2+] MGFYSGNNHQQTJW-UHFFFAOYSA-N 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000009987 spinning Methods 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- 125000000547 substituted alkyl group Chemical group 0.000 description 3
- 150000003871 sulfonates Chemical class 0.000 description 3
- 150000003457 sulfones Chemical class 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 3
- GQRTVVANIGOXRF-UHFFFAOYSA-N (2-methyl-1-adamantyl) prop-2-enoate Chemical compound C1C(C2)CC3CC1C(C)C2(OC(=O)C=C)C3 GQRTVVANIGOXRF-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 229920001774 Perfluoroether Chemical group 0.000 description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000004414 alkyl thio group Chemical group 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 235000001671 coumarin Nutrition 0.000 description 2
- 125000000332 coumarinyl group Chemical class O1C(=O)C(=CC2=CC=CC=C12)* 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 125000004185 ester group Chemical group 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine group Chemical group NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229930005346 hydroxycinnamic acid Natural products 0.000 description 2
- 235000010359 hydroxycinnamic acids Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 125000004170 methylsulfonyl group Chemical group [H]C([H])([H])S(*)(=O)=O 0.000 description 2
- 125000006502 nitrobenzyl group Chemical group 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229920005596 polymer binder Polymers 0.000 description 2
- 239000002491 polymer binding agent Substances 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 2
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 2
- 125000001544 thienyl group Chemical group 0.000 description 2
- NGSWKAQJJWESNS-ZZXKWVIFSA-N trans-4-coumaric acid Chemical compound OC(=O)\C=C\C1=CC=C(O)C=C1 NGSWKAQJJWESNS-ZZXKWVIFSA-N 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- AATKCDPVYREEEG-UHFFFAOYSA-N (2-methyl-1-adamantyl) 2-methylprop-2-enoate Chemical compound C1C(C2)CC3CC1C(C)C2(OC(=O)C(C)=C)C3 AATKCDPVYREEEG-UHFFFAOYSA-N 0.000 description 1
- MSLTZKLJPHUCPU-WNQIDUERSA-M (2s)-2-hydroxypropanoate;tetrabutylazanium Chemical group C[C@H](O)C([O-])=O.CCCC[N+](CCCC)(CCCC)CCCC MSLTZKLJPHUCPU-WNQIDUERSA-M 0.000 description 1
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical group C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- 125000004641 (C1-C12) haloalkyl group Chemical group 0.000 description 1
- 125000006552 (C3-C8) cycloalkyl group Chemical group 0.000 description 1
- JGTNAGYHADQMCM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-M 0.000 description 1
- QZHDEAJFRJCDMF-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,5,5,6,6,6-tridecafluorohexane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F QZHDEAJFRJCDMF-UHFFFAOYSA-M 0.000 description 1
- YFSUTJLHUFNCNZ-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YFSUTJLHUFNCNZ-UHFFFAOYSA-M 0.000 description 1
- RJGUAQKOHAABLK-UHFFFAOYSA-N 1,1,2,2-tetrafluoro-2-(1,1,2,2,2-pentafluoroethoxy)ethanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)OC(F)(F)C(F)(F)F RJGUAQKOHAABLK-UHFFFAOYSA-N 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N 2-Ethylhexanoic acid Chemical compound CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- LBUOSVPOVIEPLJ-UHFFFAOYSA-N 2-butoxyethyl oleate Natural products CCCCCCCCC=CCCCCCCCC(=O)OCCOCCCC LBUOSVPOVIEPLJ-UHFFFAOYSA-N 0.000 description 1
- MUHFRORXWCGZGE-KTKRTIGZSA-N 2-hydroxyethyl (z)-octadec-9-enoate Polymers CCCCCCCC\C=C/CCCCCCCC(=O)OCCO MUHFRORXWCGZGE-KTKRTIGZSA-N 0.000 description 1
- ALKCLFLTXBBMMP-UHFFFAOYSA-N 3,7-dimethylocta-1,6-dien-3-yl hexanoate Chemical compound CCCCCC(=O)OC(C)(C=C)CCC=C(C)C ALKCLFLTXBBMMP-UHFFFAOYSA-N 0.000 description 1
- UHDNUPHSDMOGCR-UHFFFAOYSA-N 3-Formylbenzoic acid Chemical compound OC(=O)C1=CC=CC(C=O)=C1 UHDNUPHSDMOGCR-UHFFFAOYSA-N 0.000 description 1
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical class OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical group CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YXHKONLOYHBTNS-UHFFFAOYSA-N Diazomethane Chemical compound C=[N+]=[N-] YXHKONLOYHBTNS-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical group CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- FRQDZJMEHSJOPU-UHFFFAOYSA-N Triethylene glycol bis(2-ethylhexanoate) Chemical compound CCCCC(CC)C(=O)OCCOCCOCCOC(=O)C(CC)CCCC FRQDZJMEHSJOPU-UHFFFAOYSA-N 0.000 description 1
- IAXXETNIOYFMLW-COPLHBTASA-N [(1s,3s,4s)-4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl] 2-methylprop-2-enoate Chemical group C1C[C@]2(C)[C@@H](OC(=O)C(=C)C)C[C@H]1C2(C)C IAXXETNIOYFMLW-COPLHBTASA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000004036 acetal group Chemical group 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 150000001241 acetals Chemical class 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical class OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical group CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 125000000499 benzofuranyl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- KZBSIGKPGIZQJQ-UHFFFAOYSA-N bis(2-butoxyethyl) decanedioate Chemical compound CCCCOCCOC(=O)CCCCCCCCC(=O)OCCOCCCC KZBSIGKPGIZQJQ-UHFFFAOYSA-N 0.000 description 1
- IHTSDBYPAZEUOP-UHFFFAOYSA-N bis(2-butoxyethyl) hexanedioate Chemical compound CCCCOCCOC(=O)CCCCC(=O)OCCOCCCC IHTSDBYPAZEUOP-UHFFFAOYSA-N 0.000 description 1
- CMCJNODIWQEOAI-UHFFFAOYSA-N bis(2-butoxyethyl)phthalate Chemical compound CCCCOCCOC(=O)C1=CC=CC=C1C(=O)OCCOCCCC CMCJNODIWQEOAI-UHFFFAOYSA-N 0.000 description 1
- WNGIWNPTAWQGOL-UHFFFAOYSA-N bis(4-tert-butylphenyl)iodanium trifluoromethyl benzenesulfonate Chemical compound FC(F)(F)OS(=O)(=O)C1=CC=CC=C1.C(C)(C)(C)C1=CC=C(C=C1)[I+]C1=CC=C(C=C1)C(C)(C)C WNGIWNPTAWQGOL-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- SHZIWNPUGXLXDT-UHFFFAOYSA-N caproic acid ethyl ester Natural products CCCCCC(=O)OCC SHZIWNPUGXLXDT-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 230000000911 decarboxylating effect Effects 0.000 description 1
- 238000006114 decarboxylation reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- ZFTFAPZRGNKQPU-UHFFFAOYSA-N dicarbonic acid Chemical compound OC(=O)OC(O)=O ZFTFAPZRGNKQPU-UHFFFAOYSA-N 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940043237 diethanolamine Drugs 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- HAHYIMGJWDNBDK-UHFFFAOYSA-N ethyl 3-hydrazinylbenzoate Chemical compound CCOC(=O)C1=CC=CC(NN)=C1 HAHYIMGJWDNBDK-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229940091853 isobornyl acrylate Drugs 0.000 description 1
- 229940119545 isobornyl methacrylate Drugs 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229940063557 methacrylate Drugs 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- 125000006574 non-aromatic ring group Chemical group 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- 125000002971 oxazolyl group Chemical group 0.000 description 1
- 125000005740 oxycarbonyl group Chemical group [*:1]OC([*:2])=O 0.000 description 1
- 150000007965 phenolic acids Chemical class 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000003170 phenylsulfonyl group Chemical group C1(=CC=CC=C1)S(=O)(=O)* 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical class OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- DYHSDKLCOJIUFX-UHFFFAOYSA-N tert-butoxycarbonyl anhydride Chemical compound CC(C)(C)OC(=O)OC(=O)OC(C)(C)C DYHSDKLCOJIUFX-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920006029 tetra-polymer Polymers 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- 125000001412 tetrahydropyranyl group Chemical group 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229940086542 triethylamine Drugs 0.000 description 1
- 229960004418 trolamine Drugs 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29044501P | 2001-05-11 | 2001-05-11 | |
| US60/290,445 | 2001-05-11 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-7014585A Division KR20040029977A (ko) | 2001-05-11 | 2002-05-10 | 후막 포토레지스트 및 그의 사용방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20090036153A true KR20090036153A (ko) | 2009-04-13 |
Family
ID=23116028
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097006655A Ceased KR20090036153A (ko) | 2001-05-11 | 2002-05-10 | 후막 포토레지스트 및 그의 사용방법 |
| KR10-2003-7014585A Ceased KR20040029977A (ko) | 2001-05-11 | 2002-05-10 | 후막 포토레지스트 및 그의 사용방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-7014585A Ceased KR20040029977A (ko) | 2001-05-11 | 2002-05-10 | 후막 포토레지스트 및 그의 사용방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6800422B2 (enExample) |
| EP (1) | EP1393131A4 (enExample) |
| JP (1) | JP4297408B2 (enExample) |
| KR (2) | KR20090036153A (enExample) |
| CN (1) | CN100409101C (enExample) |
| WO (1) | WO2002093262A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013125861A1 (ko) | 2012-02-20 | 2013-08-29 | 주식회사 노리코리아 | 지식 유닛에 기초하여 교육 서비스를 제공하기 위한 방법, 시스템 및 컴퓨터 판독 가능한 기록 매체 |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6740464B2 (en) * | 2000-01-14 | 2004-05-25 | Fuji Photo Film Co., Ltd. | Lithographic printing plate precursor |
| CN100409101C (zh) * | 2001-05-11 | 2008-08-06 | 希普雷公司 | 厚膜型光致抗蚀剂及其使用方法 |
| JP4318945B2 (ja) * | 2003-04-07 | 2009-08-26 | 東京応化工業株式会社 | 厚膜用化学増幅型ポジ型ホトレジスト組成物、厚膜ホトレジスト積層体、厚膜レジストパターンの製造方法及び接続端子の製造方法 |
| WO2004092831A2 (en) * | 2003-04-09 | 2004-10-28 | Rohm And Haas, Electronic Materials, L.L.C. | Photoresists and methods for use thereof |
| US7927778B2 (en) | 2004-12-29 | 2011-04-19 | Tokyo Ohka Kogyo Co., Ltd. | Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal |
| US7951522B2 (en) | 2004-12-29 | 2011-05-31 | Tokyo Ohka Kogyo Co., Ltd. | Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal |
| JP4499591B2 (ja) * | 2005-03-23 | 2010-07-07 | 東京応化工業株式会社 | 厚膜形成用化学増幅型ポジ型ホトレジスト組成物 |
| US7255970B2 (en) * | 2005-07-12 | 2007-08-14 | Az Electronic Materials Usa Corp. | Photoresist composition for imaging thick films |
| US20070105040A1 (en) * | 2005-11-10 | 2007-05-10 | Toukhy Medhat A | Developable undercoating composition for thick photoresist layers |
| US20070166640A1 (en) * | 2006-01-19 | 2007-07-19 | Yayi Wei | Defect reduction in immersion lithography |
| US7601482B2 (en) * | 2006-03-28 | 2009-10-13 | Az Electronic Materials Usa Corp. | Negative photoresist compositions |
| US7479463B2 (en) * | 2007-03-09 | 2009-01-20 | Tokyo Electron Limited | Method for heating a chemically amplified resist layer carried on a rotating substrate |
| US20100151118A1 (en) * | 2008-12-17 | 2010-06-17 | Eastman Chemical Company | Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings |
| JP5783687B2 (ja) * | 2009-06-23 | 2015-09-24 | 住友化学株式会社 | 樹脂及びレジスト組成物 |
| TWI477911B (zh) * | 2009-12-15 | 2015-03-21 | 羅門哈斯電子材料有限公司 | 光阻劑及其使用方法 |
| KR101007039B1 (ko) * | 2010-07-27 | 2011-01-12 | 한국기계연구원 | 스핀들에 자유도를 부여한 심압대 및 이를 구비한 롤 금형 가공기 |
| KR101841000B1 (ko) * | 2010-07-28 | 2018-03-22 | 스미또모 가가꾸 가부시키가이샤 | 포토레지스트 조성물 |
| JP6195692B2 (ja) | 2010-08-30 | 2017-09-13 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法並びに新規化合物及び樹脂 |
| JP5829941B2 (ja) | 2011-02-25 | 2015-12-09 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP5947051B2 (ja) | 2011-02-25 | 2016-07-06 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP5898521B2 (ja) | 2011-02-25 | 2016-04-06 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP5829939B2 (ja) | 2011-02-25 | 2015-12-09 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP5898520B2 (ja) | 2011-02-25 | 2016-04-06 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP5829940B2 (ja) | 2011-02-25 | 2015-12-09 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP6034025B2 (ja) | 2011-02-25 | 2016-11-30 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP5947053B2 (ja) | 2011-02-25 | 2016-07-06 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP6034026B2 (ja) | 2011-02-25 | 2016-11-30 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP5912912B2 (ja) | 2011-07-19 | 2016-04-27 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP6013797B2 (ja) | 2011-07-19 | 2016-10-25 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP6189020B2 (ja) | 2011-07-19 | 2017-08-30 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP6013799B2 (ja) | 2011-07-19 | 2016-10-25 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP5886696B2 (ja) | 2011-07-19 | 2016-03-16 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| US9012126B2 (en) | 2012-06-15 | 2015-04-21 | Az Electronic Materials (Luxembourg) S.A.R.L. | Positive photosensitive material |
| US8906594B2 (en) | 2012-06-15 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working thick film photoresist |
| JP6292059B2 (ja) | 2013-08-13 | 2018-03-14 | Jsr株式会社 | 基板の加工方法 |
| US9354390B2 (en) | 2013-12-11 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacturing |
| TWI731961B (zh) | 2016-04-19 | 2021-07-01 | 德商馬克專利公司 | 正向感光材料及形成正向凸紋影像之方法 |
| CN107664921B (zh) * | 2016-07-29 | 2019-12-24 | 上海微电子装备（集团）股份有限公司 | 可调平的版库设备 |
| SG11202100517VA (en) | 2018-09-05 | 2021-02-25 | Merck Patent Gmbh | Positive working photosensitive material |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63104425A (ja) * | 1986-10-09 | 1988-05-09 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | バイアの形成方法 |
| US5248582A (en) * | 1988-09-07 | 1993-09-28 | Fuji Photo Film Co., Ltd. | Positive-type photoresist composition |
| US5302490A (en) | 1991-10-21 | 1994-04-12 | Shipley Company Inc. | Radiation sensitive compositions comprising blends of an aliphatic novolak resin and an aromatic novolak resin |
| JP2688168B2 (ja) * | 1992-11-03 | 1997-12-08 | インターナショナル・ビジネス・マシーンズ・コーポレイション | フォトレジストイメージ形成プロセス |
| JPH06186754A (ja) * | 1992-12-17 | 1994-07-08 | Mitsubishi Electric Corp | 微細レジストパターンの形成方法 |
| US5691101A (en) * | 1994-03-15 | 1997-11-25 | Kabushiki Kaisha Toshiba | Photosensitive composition |
| DE19546140C2 (de) * | 1995-11-28 | 1998-08-06 | Atotech Deutschland Gmbh | Photoempfindliche Zusammensetzung |
| US5879856A (en) * | 1995-12-05 | 1999-03-09 | Shipley Company, L.L.C. | Chemically amplified positive photoresists |
| JP3518158B2 (ja) * | 1996-04-02 | 2004-04-12 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
| US5861231A (en) | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
| US6187504B1 (en) * | 1996-12-19 | 2001-02-13 | Jsr Corporation | Radiation sensitive resin composition |
| JPH10186680A (ja) * | 1996-12-26 | 1998-07-14 | Clariant Internatl Ltd | リンス液 |
| US6103445A (en) * | 1997-03-07 | 2000-08-15 | Board Of Regents, The University Of Texas System | Photoresist compositions comprising norbornene derivative polymers with acid labile groups |
| JP3993692B2 (ja) * | 1997-11-28 | 2007-10-17 | 関西ペイント株式会社 | レジストパターン形成方法 |
| US6410213B1 (en) * | 1998-06-09 | 2002-06-25 | Corning Incorporated | Method for making optical microstructures having profile heights exceeding fifteen microns |
| JP4144957B2 (ja) * | 1999-01-22 | 2008-09-03 | 富士通株式会社 | レジスト組成物及びレジストパターンの形成方法 |
| TWI277830B (en) * | 1999-01-28 | 2007-04-01 | Sumitomo Chemical Co | Resist composition |
| CN100409101C (zh) * | 2001-05-11 | 2008-08-06 | 希普雷公司 | 厚膜型光致抗蚀剂及其使用方法 |
-
2002
- 2002-05-10 CN CNB02811695XA patent/CN100409101C/zh not_active Expired - Lifetime
- 2002-05-10 JP JP2002589880A patent/JP4297408B2/ja not_active Expired - Lifetime
- 2002-05-10 EP EP02734337A patent/EP1393131A4/en not_active Withdrawn
- 2002-05-10 WO PCT/US2002/014788 patent/WO2002093262A1/en not_active Ceased
- 2002-05-10 US US10/142,732 patent/US6800422B2/en not_active Expired - Lifetime
- 2002-05-10 KR KR1020097006655A patent/KR20090036153A/ko not_active Ceased
- 2002-05-10 KR KR10-2003-7014585A patent/KR20040029977A/ko not_active Ceased
-
2004
- 2004-08-23 US US10/924,351 patent/US20050019705A1/en not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013125861A1 (ko) | 2012-02-20 | 2013-08-29 | 주식회사 노리코리아 | 지식 유닛에 기초하여 교육 서비스를 제공하기 위한 방법, 시스템 및 컴퓨터 판독 가능한 기록 매체 |
| US11605305B2 (en) | 2012-02-20 | 2023-03-14 | Knowre Korea Inc. | Method, system, and computer-readable recording medium for providing education service based on knowledge units |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1393131A1 (en) | 2004-03-03 |
| WO2002093262A1 (en) | 2002-11-21 |
| JP2004526212A (ja) | 2004-08-26 |
| CN1514956A (zh) | 2004-07-21 |
| US20050019705A1 (en) | 2005-01-27 |
| US6800422B2 (en) | 2004-10-05 |
| CN100409101C (zh) | 2008-08-06 |
| EP1393131A4 (en) | 2006-08-09 |
| KR20040029977A (ko) | 2004-04-08 |
| US20030027086A1 (en) | 2003-02-06 |
| JP4297408B2 (ja) | 2009-07-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20090036153A (ko) | 후막 포토레지스트 및 그의 사용방법 | |
| JP5863840B2 (ja) | 液浸リソグラフィーのための組成物および方法 | |
| TWI443457B (zh) | 包含鹼反應性成分之組成物及光微影製程 | |
| JP5708938B2 (ja) | 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法 | |
| CN103582847B (zh) | 图案形成方法、树脂组合物、抗蚀剂膜、用于制造电子器件的方法，以及电子器件 | |
| KR101916756B1 (ko) | 헤테로-치환된 카보사이클릭 아릴 성분을 포함하는 조성물 및 포토리소그래피 공정 | |
| US6146793A (en) | Radiation sensitive terpolymer, photoresist compositions thereof and 193 nm bilayer systems | |
| CN102591147B (zh) | 用于光刻的包含糖组分的组合物及其制备方法 | |
| KR20100056416A (ko) | 설폰아미드 물질을 포함하는 조성물 및 포토리소그래피 공정 | |
| HK1076629A (en) | Positive-working photoimageable bottom antireflective coating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A107 | Divisional application of patent | ||
| A201 | Request for examination | ||
| PA0104 | Divisional application for international application |
Comment text: Divisional Application for International Patent Patent event code: PA01041R01D Patent event date: 20090331 |
|
| PA0201 | Request for examination | ||
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20090427 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20100204 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20090427 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |