CN100404428C - 低氧化铌、其制造方法和含有它的电容器 - Google Patents
低氧化铌、其制造方法和含有它的电容器 Download PDFInfo
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- CN100404428C CN100404428C CNB2004100545226A CN200410054522A CN100404428C CN 100404428 C CN100404428 C CN 100404428C CN B2004100545226 A CNB2004100545226 A CN B2004100545226A CN 200410054522 A CN200410054522 A CN 200410054522A CN 100404428 C CN100404428 C CN 100404428C
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- Prior art keywords
- nbo
- niobium
- temperature
- suboxide
- metal
- Prior art date
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- 239000010955 niobium Substances 0.000 title claims abstract description 82
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 229910052758 niobium Inorganic materials 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract description 10
- 239000003990 capacitor Substances 0.000 abstract description 8
- 239000007784 solid electrolyte Substances 0.000 abstract description 3
- 239000000843 powder Substances 0.000 description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 238000007493 shaping process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 150000002821 niobium Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- BJDGBXPQVFSQOZ-UHFFFAOYSA-N [O-2].[O-2].[Nb+4] Chemical compound [O-2].[O-2].[Nb+4] BJDGBXPQVFSQOZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- HFLAMWCKUFHSAZ-UHFFFAOYSA-N niobium dioxide Inorganic materials O=[Nb]=O HFLAMWCKUFHSAZ-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G33/00—Compounds of niobium
-
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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- C04B2235/658—Atmosphere during thermal treatment
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Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10333156.5 | 2003-07-22 | ||
DE2003133156 DE10333156A1 (de) | 2003-07-22 | 2003-07-22 | Verfahren zur Herstellung von Niobsuboxid |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNA2008101098270A Division CN101298340A (zh) | 2003-07-22 | 2004-07-22 | 制造低氧化铌的方法 |
Publications (2)
Publication Number | Publication Date |
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CN1576234A CN1576234A (zh) | 2005-02-09 |
CN100404428C true CN100404428C (zh) | 2008-07-23 |
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CNA2008101098270A Pending CN101298340A (zh) | 2003-07-22 | 2004-07-22 | 制造低氧化铌的方法 |
CNB2004100545226A Active CN100404428C (zh) | 2003-07-22 | 2004-07-22 | 低氧化铌、其制造方法和含有它的电容器 |
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CNA2008101098270A Pending CN101298340A (zh) | 2003-07-22 | 2004-07-22 | 制造低氧化铌的方法 |
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US (2) | US7341705B2 (zh) |
EP (2) | EP2078699A1 (zh) |
JP (2) | JP4317091B2 (zh) |
KR (1) | KR101129764B1 (zh) |
CN (2) | CN101298340A (zh) |
AU (1) | AU2004203208B2 (zh) |
BR (1) | BRPI0402986A (zh) |
DE (2) | DE10333156A1 (zh) |
IL (1) | IL163104A (zh) |
MX (1) | MXPA04007024A (zh) |
PH (1) | PH12008000260A1 (zh) |
PT (1) | PT1508550E (zh) |
RU (1) | RU2363660C2 (zh) |
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- 2004-07-16 EP EP20040016842 patent/EP1508550B1/de active Active
- 2004-07-16 AU AU2004203208A patent/AU2004203208B2/en not_active Ceased
- 2004-07-16 DE DE200450009299 patent/DE502004009299D1/de active Active
- 2004-07-16 PT PT04016842T patent/PT1508550E/pt unknown
- 2004-07-19 US US10/894,279 patent/US7341705B2/en active Active
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- 2004-07-20 MX MXPA04007024A patent/MXPA04007024A/es active IP Right Grant
- 2004-07-21 JP JP2004213228A patent/JP4317091B2/ja active Active
- 2004-07-21 TW TW93121672A patent/TWI355424B/zh not_active IP Right Cessation
- 2004-07-21 RU RU2004122053A patent/RU2363660C2/ru active
- 2004-07-21 KR KR1020040056654A patent/KR101129764B1/ko not_active IP Right Cessation
- 2004-07-22 CN CNA2008101098270A patent/CN101298340A/zh active Pending
- 2004-07-22 BR BRPI0402986 patent/BRPI0402986A/pt active IP Right Grant
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- 2004-07-22 ZA ZA2004/05851A patent/ZA200405851B/en unknown
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2007
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Also Published As
Publication number | Publication date |
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JP4317091B2 (ja) | 2009-08-19 |
US20090242853A1 (en) | 2009-10-01 |
AU2004203208A1 (en) | 2005-02-10 |
JP5630962B2 (ja) | 2014-11-26 |
KR20050011700A (ko) | 2005-01-29 |
IL163104A (en) | 2007-10-31 |
ZA200405851B (en) | 2005-09-28 |
RU2004122053A (ru) | 2006-01-27 |
JP2005041774A (ja) | 2005-02-17 |
TW200516157A (en) | 2005-05-16 |
BRPI0402986A (pt) | 2005-05-24 |
CN101298340A (zh) | 2008-11-05 |
EP2078699A1 (de) | 2009-07-15 |
EP1508550A1 (de) | 2005-02-23 |
DE502004009299D1 (de) | 2009-05-20 |
RU2363660C2 (ru) | 2009-08-10 |
AU2004203208B2 (en) | 2009-07-23 |
JP2009143804A (ja) | 2009-07-02 |
MXPA04007024A (es) | 2005-03-23 |
EP1508550B1 (de) | 2009-04-08 |
KR101129764B1 (ko) | 2012-03-26 |
PT1508550E (pt) | 2009-05-22 |
US7341705B2 (en) | 2008-03-11 |
PH12008000260A1 (en) | 2006-03-07 |
DE10333156A1 (de) | 2005-02-24 |
CN1576234A (zh) | 2005-02-09 |
TWI355424B (en) | 2012-01-01 |
US20050019581A1 (en) | 2005-01-27 |
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Address after: Goslar, Germany Patentee after: Tantalum niobium obisheng innovative materials Co., Ltd Address before: Munich, Germany Patentee before: H.C. Stack Tantalum-Niobium Co.,Ltd. |