CN100399543C - 基于自组装技术的交叉阵列结构有机器件制备方法 - Google Patents
基于自组装技术的交叉阵列结构有机器件制备方法 Download PDFInfo
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- CN100399543C CN100399543C CNB2005101093381A CN200510109338A CN100399543C CN 100399543 C CN100399543 C CN 100399543C CN B2005101093381 A CNB2005101093381 A CN B2005101093381A CN 200510109338 A CN200510109338 A CN 200510109338A CN 100399543 C CN100399543 C CN 100399543C
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000005516 engineering process Methods 0.000 title description 7
- 238000001338 self-assembly Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000001259 photo etching Methods 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims abstract description 12
- 238000004528 spin coating Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000001312 dry etching Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000007791 liquid phase Substances 0.000 claims abstract description 6
- 239000011368 organic material Substances 0.000 claims description 14
- 241000193935 Araneus diadematus Species 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 230000003628 erosive effect Effects 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005442 molecular electronic Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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CNB2005101093381A CN100399543C (zh) | 2005-10-13 | 2005-10-13 | 基于自组装技术的交叉阵列结构有机器件制备方法 |
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CNB2005101093381A CN100399543C (zh) | 2005-10-13 | 2005-10-13 | 基于自组装技术的交叉阵列结构有机器件制备方法 |
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CN1949475A CN1949475A (zh) | 2007-04-18 |
CN100399543C true CN100399543C (zh) | 2008-07-02 |
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CNB2005101093381A Active CN100399543C (zh) | 2005-10-13 | 2005-10-13 | 基于自组装技术的交叉阵列结构有机器件制备方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101051185B (zh) * | 2007-05-23 | 2010-11-03 | 中国科学院光电技术研究所 | 光刻定位自组装填充方法 |
CN100557841C (zh) * | 2007-10-24 | 2009-11-04 | 中国科学院微电子研究所 | 一种制备交叉分子电子器件的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1139998C (zh) * | 2001-11-30 | 2004-02-25 | 复旦大学 | 一种电可擦写的分子基有机电双稳薄膜器件及其制作工艺 |
US20040097101A1 (en) * | 2002-11-15 | 2004-05-20 | Raymond Kwong | Structure and method of fabricating organic devices |
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2005
- 2005-10-13 CN CNB2005101093381A patent/CN100399543C/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1139998C (zh) * | 2001-11-30 | 2004-02-25 | 复旦大学 | 一种电可擦写的分子基有机电双稳薄膜器件及其制作工艺 |
US20040097101A1 (en) * | 2002-11-15 | 2004-05-20 | Raymond Kwong | Structure and method of fabricating organic devices |
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Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 |
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Effective date of registration: 20130419 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |