CN1901141A - 基于氮化硅镂空掩模的纳米电极制备方法 - Google Patents
基于氮化硅镂空掩模的纳米电极制备方法 Download PDFInfo
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- CN1901141A CN1901141A CN 200510085294 CN200510085294A CN1901141A CN 1901141 A CN1901141 A CN 1901141A CN 200510085294 CN200510085294 CN 200510085294 CN 200510085294 A CN200510085294 A CN 200510085294A CN 1901141 A CN1901141 A CN 1901141A
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CNB2005100852943A CN100428415C (zh) | 2005-07-22 | 2005-07-22 | 基于氮化硅镂空掩模的纳米电极制备方法 |
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CNB2005100852943A CN100428415C (zh) | 2005-07-22 | 2005-07-22 | 基于氮化硅镂空掩模的纳米电极制备方法 |
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CN1901141A true CN1901141A (zh) | 2007-01-24 |
CN100428415C CN100428415C (zh) | 2008-10-22 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110923623A (zh) * | 2019-12-06 | 2020-03-27 | 苏州逸峰新材料科技有限公司 | 一种磁场吸附辅助掩模蒸镀微纳结构的制备方法 |
CN112563124A (zh) * | 2020-12-10 | 2021-03-26 | 西安电子科技大学 | 一种大面积超薄镂空硬掩模的制备方法 |
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JPH01238176A (ja) * | 1988-03-18 | 1989-09-22 | Nec Corp | 化合物半導体電界効果トランジスタおよびその製造方法 |
US5308442A (en) * | 1993-01-25 | 1994-05-03 | Hewlett-Packard Company | Anisotropically etched ink fill slots in silicon |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110923623A (zh) * | 2019-12-06 | 2020-03-27 | 苏州逸峰新材料科技有限公司 | 一种磁场吸附辅助掩模蒸镀微纳结构的制备方法 |
CN112563124A (zh) * | 2020-12-10 | 2021-03-26 | 西安电子科技大学 | 一种大面积超薄镂空硬掩模的制备方法 |
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CN100428415C (zh) | 2008-10-22 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 |
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Effective date of registration: 20130419 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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