CN100452473C - 采用氧化硅填充-回刻的交叉阵列结构有机器件制备方法 - Google Patents
采用氧化硅填充-回刻的交叉阵列结构有机器件制备方法 Download PDFInfo
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CNB2005100121717A CN100452473C (zh) | 2005-07-14 | 2005-07-14 | 采用氧化硅填充-回刻的交叉阵列结构有机器件制备方法 |
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CN1897322A CN1897322A (zh) | 2007-01-17 |
CN100452473C true CN100452473C (zh) | 2009-01-14 |
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CN100594626C (zh) * | 2007-01-24 | 2010-03-17 | 中国科学院微电子研究所 | 一种制备交叉结构有机分子器件的方法 |
CN103903970A (zh) * | 2014-03-10 | 2014-07-02 | 中国科学院物理研究所 | 一种具有纳米间隙的异质电极对的制作方法 |
Citations (3)
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CN1352470A (zh) * | 2001-11-30 | 2002-06-05 | 复旦大学 | 一种电可擦写的分子基有机电双稳薄膜器件及其制作工艺 |
CN1497705A (zh) * | 2002-09-30 | 2004-05-19 | ������������ʽ���� | 制造自对准交叉点存储阵列的方法 |
US20040097101A1 (en) * | 2002-11-15 | 2004-05-20 | Raymond Kwong | Structure and method of fabricating organic devices |
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CN1352470A (zh) * | 2001-11-30 | 2002-06-05 | 复旦大学 | 一种电可擦写的分子基有机电双稳薄膜器件及其制作工艺 |
CN1497705A (zh) * | 2002-09-30 | 2004-05-19 | ������������ʽ���� | 制造自对准交叉点存储阵列的方法 |
US20040097101A1 (en) * | 2002-11-15 | 2004-05-20 | Raymond Kwong | Structure and method of fabricating organic devices |
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