CN100395881C - 非挥发性内存及其制造方法 - Google Patents
非挥发性内存及其制造方法 Download PDFInfo
- Publication number
- CN100395881C CN100395881C CNB2004100588753A CN200410058875A CN100395881C CN 100395881 C CN100395881 C CN 100395881C CN B2004100588753 A CNB2004100588753 A CN B2004100588753A CN 200410058875 A CN200410058875 A CN 200410058875A CN 100395881 C CN100395881 C CN 100395881C
- Authority
- CN
- China
- Prior art keywords
- layer
- conduction
- lock
- conduction lock
- floating gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/631,552 US6962852B2 (en) | 2003-03-19 | 2003-07-30 | Nonvolatile memories and methods of fabrication |
US10/631,552 | 2003-07-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1585109A CN1585109A (zh) | 2005-02-23 |
CN100395881C true CN100395881C (zh) | 2008-06-18 |
Family
ID=34273237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100588753A Expired - Fee Related CN100395881C (zh) | 2003-07-30 | 2004-07-30 | 非挥发性内存及其制造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2005051244A (ja) |
CN (1) | CN100395881C (ja) |
TW (1) | TWI247390B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100751418B1 (ko) * | 2007-02-08 | 2007-08-22 | 엘지전자 주식회사 | 가스 버너 및 이를 이용한 히팅장치 |
DE102018110841A1 (de) | 2017-09-20 | 2019-03-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Zellenartige floating-gate-teststruktur |
US10535574B2 (en) | 2017-09-20 | 2020-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cell-like floating-gate test structure |
CN111373533B (zh) * | 2018-05-17 | 2023-09-29 | 桑迪士克科技有限责任公司 | 含有氢扩散阻挡结构的三维存储器装置及其制造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5073513A (en) * | 1989-08-17 | 1991-12-17 | Samsung Electronics Co., Ltd. | Manufacture of a nonvolatile semiconductor memory device having a sidewall select gate |
US5402371A (en) * | 1992-10-09 | 1995-03-28 | Oki Electric Industry Co., Ltd. | Method of writing data into and erasing the same from semiconductor nonvolatile memory |
US5445983A (en) * | 1994-10-11 | 1995-08-29 | United Microelectronics Corporation | Method of manufacturing EEPROM memory device with a select gate |
US5856943A (en) * | 1996-03-18 | 1999-01-05 | Integrated Memory Technologies, Inc. | Scalable flash EEPROM memory cell and array |
US6005807A (en) * | 1998-09-16 | 1999-12-21 | Winbond Electronics Corp. | Method and apparatus for self-aligned memory cells and array using source side injection |
US6291297B1 (en) * | 1999-03-24 | 2001-09-18 | Actrans System Inc. | Flash memory cell with self-aligned gates and fabrication process |
CN1514485A (zh) * | 2003-03-19 | 2004-07-21 | ̨��ï�����ӹɷ�����˾ | 非挥发性内存及其制造方法 |
-
2004
- 2004-07-29 JP JP2004221666A patent/JP2005051244A/ja not_active Ceased
- 2004-07-30 CN CNB2004100588753A patent/CN100395881C/zh not_active Expired - Fee Related
- 2004-07-30 TW TW93123005A patent/TWI247390B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5073513A (en) * | 1989-08-17 | 1991-12-17 | Samsung Electronics Co., Ltd. | Manufacture of a nonvolatile semiconductor memory device having a sidewall select gate |
US5402371A (en) * | 1992-10-09 | 1995-03-28 | Oki Electric Industry Co., Ltd. | Method of writing data into and erasing the same from semiconductor nonvolatile memory |
US5445983A (en) * | 1994-10-11 | 1995-08-29 | United Microelectronics Corporation | Method of manufacturing EEPROM memory device with a select gate |
US5856943A (en) * | 1996-03-18 | 1999-01-05 | Integrated Memory Technologies, Inc. | Scalable flash EEPROM memory cell and array |
US6005807A (en) * | 1998-09-16 | 1999-12-21 | Winbond Electronics Corp. | Method and apparatus for self-aligned memory cells and array using source side injection |
US6291297B1 (en) * | 1999-03-24 | 2001-09-18 | Actrans System Inc. | Flash memory cell with self-aligned gates and fabrication process |
CN1514485A (zh) * | 2003-03-19 | 2004-07-21 | ̨��ï�����ӹɷ�����˾ | 非挥发性内存及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1585109A (zh) | 2005-02-23 |
TW200516727A (en) | 2005-05-16 |
TWI247390B (en) | 2006-01-11 |
JP2005051244A (ja) | 2005-02-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080618 |