CN100395881C - 非挥发性内存及其制造方法 - Google Patents

非挥发性内存及其制造方法 Download PDF

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Publication number
CN100395881C
CN100395881C CNB2004100588753A CN200410058875A CN100395881C CN 100395881 C CN100395881 C CN 100395881C CN B2004100588753 A CNB2004100588753 A CN B2004100588753A CN 200410058875 A CN200410058875 A CN 200410058875A CN 100395881 C CN100395881 C CN 100395881C
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China
Prior art keywords
layer
conduction
lock
conduction lock
floating gate
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Expired - Fee Related
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CNB2004100588753A
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English (en)
Chinese (zh)
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CN1585109A (zh
Inventor
丁逸
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MAOXI ELECTRONIC CO Ltd TAIWAN
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MAOXI ELECTRONIC CO Ltd TAIWAN
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Priority claimed from US10/631,552 external-priority patent/US6962852B2/en
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Publication of CN1585109A publication Critical patent/CN1585109A/zh
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Publication of CN100395881C publication Critical patent/CN100395881C/zh
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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CNB2004100588753A 2003-07-30 2004-07-30 非挥发性内存及其制造方法 Expired - Fee Related CN100395881C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/631,552 US6962852B2 (en) 2003-03-19 2003-07-30 Nonvolatile memories and methods of fabrication
US10/631,552 2003-07-30

Publications (2)

Publication Number Publication Date
CN1585109A CN1585109A (zh) 2005-02-23
CN100395881C true CN100395881C (zh) 2008-06-18

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CNB2004100588753A Expired - Fee Related CN100395881C (zh) 2003-07-30 2004-07-30 非挥发性内存及其制造方法

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JP (1) JP2005051244A (ja)
CN (1) CN100395881C (ja)
TW (1) TWI247390B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100751418B1 (ko) * 2007-02-08 2007-08-22 엘지전자 주식회사 가스 버너 및 이를 이용한 히팅장치
DE102018110841A1 (de) 2017-09-20 2019-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Zellenartige floating-gate-teststruktur
US10535574B2 (en) 2017-09-20 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Cell-like floating-gate test structure
CN111373533B (zh) * 2018-05-17 2023-09-29 桑迪士克科技有限责任公司 含有氢扩散阻挡结构的三维存储器装置及其制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073513A (en) * 1989-08-17 1991-12-17 Samsung Electronics Co., Ltd. Manufacture of a nonvolatile semiconductor memory device having a sidewall select gate
US5402371A (en) * 1992-10-09 1995-03-28 Oki Electric Industry Co., Ltd. Method of writing data into and erasing the same from semiconductor nonvolatile memory
US5445983A (en) * 1994-10-11 1995-08-29 United Microelectronics Corporation Method of manufacturing EEPROM memory device with a select gate
US5856943A (en) * 1996-03-18 1999-01-05 Integrated Memory Technologies, Inc. Scalable flash EEPROM memory cell and array
US6005807A (en) * 1998-09-16 1999-12-21 Winbond Electronics Corp. Method and apparatus for self-aligned memory cells and array using source side injection
US6291297B1 (en) * 1999-03-24 2001-09-18 Actrans System Inc. Flash memory cell with self-aligned gates and fabrication process
CN1514485A (zh) * 2003-03-19 2004-07-21 ̨��ï�����ӹɷ����޹�˾ 非挥发性内存及其制造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073513A (en) * 1989-08-17 1991-12-17 Samsung Electronics Co., Ltd. Manufacture of a nonvolatile semiconductor memory device having a sidewall select gate
US5402371A (en) * 1992-10-09 1995-03-28 Oki Electric Industry Co., Ltd. Method of writing data into and erasing the same from semiconductor nonvolatile memory
US5445983A (en) * 1994-10-11 1995-08-29 United Microelectronics Corporation Method of manufacturing EEPROM memory device with a select gate
US5856943A (en) * 1996-03-18 1999-01-05 Integrated Memory Technologies, Inc. Scalable flash EEPROM memory cell and array
US6005807A (en) * 1998-09-16 1999-12-21 Winbond Electronics Corp. Method and apparatus for self-aligned memory cells and array using source side injection
US6291297B1 (en) * 1999-03-24 2001-09-18 Actrans System Inc. Flash memory cell with self-aligned gates and fabrication process
CN1514485A (zh) * 2003-03-19 2004-07-21 ̨��ï�����ӹɷ����޹�˾ 非挥发性内存及其制造方法

Also Published As

Publication number Publication date
CN1585109A (zh) 2005-02-23
TW200516727A (en) 2005-05-16
TWI247390B (en) 2006-01-11
JP2005051244A (ja) 2005-02-24

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Granted publication date: 20080618