CN100391995C - Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same - Google Patents
Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same Download PDFInfo
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- CN100391995C CN100391995C CNB2005100783426A CN200510078342A CN100391995C CN 100391995 C CN100391995 C CN 100391995C CN B2005100783426 A CNB2005100783426 A CN B2005100783426A CN 200510078342 A CN200510078342 A CN 200510078342A CN 100391995 C CN100391995 C CN 100391995C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
PROBLEM TO BE SOLVED: To provide an epoxy resin composition for sealing a semiconductor excellent in fillability and void resistance, for example, in a flip chip package and capable of suppressing generation of warpage.
Description
Invention field
The present invention relates to generally be called the single face closed type encapsulation of ball grid array (BGA) encapsulation, and be called in the encapsulation of flip-chip package type epoxy resin composition for encapsulating semiconductor that formability and moisture-proof reliability are good and the semiconductor device that uses said composition.
Background technology
From protection viewpoint of external environment and the viewpoint that semiconductor element can load and unload, semiconductor elements such as transistor, IC, LSI are sealed by plastic package etc. makes semiconductor device.Recently, be accompanied by requirement, need make the encapsulation attenuation of single face such as BGA encapsulation closed type strongly and under a plurality of eclipsed states, make the semiconductor element encapsulationization carry out stacked semiconductor device slimming and high-density installation.
As the good sealing materials such as flowability that are used for this BGA encapsulation, the sealing material (reference literature 1) that has for example cooperated with the compound of following general formula (A) expression is disclosed.
(in the formula (A), R
1～R
6Be the alkyl or 2 of 1～12 of hydrogen atom, carbon number, the 3-glycidoxy, they both can be identical also can be different.But at least wherein two is 2, the 3-glycidoxy).
In addition, recently,, semiconductor element mounting just is being subjected to people's attention to the method (flip-chip mode) on the substrate that forms wired circuit with the structure of upside-down mounting along with the requirement that improves performance of semiconductor devices.In this construction packages resin-sealed, all the time, use liquid resin composition as sealing material, between the gap of semiconductor element and substrate, fill the mode of sealing with osmotic pressure, but, studying the sealing method of transfer molding mode from the viewpoint of property produced in batches and reliability.
The sealing material that uses when making this flip-chip package by transfer molding for example discloses, and uses that to cooperate particle diameter be the sealing material (reference literature 2) of the following SiO 2 powder of 24 μ m or 24 μ m.
[document 1] spy opens flat 8-111468 communique
[document 2] spy opens the 2000-281878 communique
Summary of the invention
But,,, have the problem that the space occurs embedding because the balance of the velocity of flow of the velocity of flow of the sealing material on the semiconductor element and the sealing material between semiconductor element is destroyed for the assembly of the single face closed type of above-mentioned laminationization.
In addition, use above-mentioned sealing material, adopt the shifting formwork moulding, during with resin-sealed flip-chip assembly, can produce following problem: (1) forms not filling part in the gap of semiconductor element and substrate, so has produced the space; (2) in the moisture-proof reliability evaluation after moulding, can occur semiconductor element and sealing resin interface peel and with substrate on the interface peel of anti-scolder agent part; (3) the flip-chip assembly deforms.
In view of the foregoing, the semiconductor device that the purpose of this invention is to provide the good epoxy resin composition for encapsulating semiconductor of fillibility and anti-embedding space property and use said composition.
The present inventor carries out a series of concentrated researchs in order to obtain anti-embedding space property composition epoxy resin good, that use in the assembly of single face closed type resin-sealed.Found that, if use the inorganic filler contain the trickle spherical inorganic filler that specified quantitative obtains with above-mentioned specific organosilane coupler surface treatment, by inference, the resistance of inorganic filler and resin Composition reduces, thus, improve the mobile balance of sealing material, embedded being inhibited of space.In addition, present inventors are necessary condition to invest fillibility, to forming the composition epoxy resin of the good sealing material of moisture-proof reliability, carry out a series of concentrated researchs.Found that, if use specific Resins, epoxy [(A) composition], and adopt through specific organosilane coupler and carry out surface treatment and the spherical inorganic filler of the specified particle diameter that obtains, by inference, the interfacial resistance of resinous principle and mineral filler agent reduces, particularly play the effect that reduces slit viscosity, thus, for example, the fillibility that has realized the gap of semiconductor device in the flip-chip assembly and substrate improves, suppresses the generation in space, and the moisture-proof reliability is good, curved characteristic improves.Find based on these,, finished the present invention through further conscientious research.
The present invention includes following form.
1. epoxy resin composition for encapsulating semiconductor that contains following (A) component, (B) component, (C) component, (D) component:
(A) Resins, epoxy;
(B) resol;
(C) curing catalyst;
(D) carried out the spherical inorganic filler of surface-treated with the organosilane coupler that contains propenyl or methylpropenyl.
2. according to the epoxy resin composition for encapsulating semiconductor of the 1st record, wherein, in the spherical inorganic filler of (D) component, median size is that the spherical inorganic filler of 0.5～3 μ m accounts for 5～50 weight % in whole inorganic fillers.
3. according to the epoxy resin composition for encapsulating semiconductor of the 1st record, wherein, (D) the above content of the particle diameter 45 μ m of the spherical inorganic filler of component or 45 μ m is 0.3 weight % or below the 0.3 weight %, and median size is 15 μ m or below the 15 μ m.
4. according to the epoxy resin composition for encapsulating semiconductor of the 1st record, wherein, (A) Resins, epoxy of component is the Resins, epoxy by following general formula (1) expression.
(in the formula (1) n be 0 or positive number).
5. a semiconductor device wherein, comprises the semiconductor encapsulating epoxy resin and the semiconductor element of the 1st record, and this semiconductor element carries out resin-sealed with this composition epoxy resin.
The present invention relates to a kind of epoxy resin composition for encapsulating semiconductor that contains inorganic filler, this inorganic filler contains useful specific organosilane coupler and carries out the spherical inorganic filler that surface treatment obtains, and good fillibility and anti-embedding space property are arranged.Particularly for the epoxy resin composition for encapsulating semiconductor that contains inorganic filler, wherein, the aforementioned specific organosilane coupler of usefulness that this inorganic filler contains specified quantitative carries out the form of the trickle spherical inorganic filler that surface treatment obtains, owing to do not destroy the balance of the velocity of flow when resin-sealed, carry out resin-sealed well, so suppressed to embed the space generation, can obtain the high semiconductor device of reliability, particularly, can obtain the relevant high semiconductor device of reliability of single face closed type encapsulation that what is called is called the BGA encapsulation.And, for aforementioned specific with general formula (1) expression Resins, epoxy and the form of the epoxy resin composition for encapsulating semiconductor of the aforementioned spherical inorganic filler that contains the specified particle diameter that useful specific organosilane coupler surface treatment obtains, particularly in the encapsulation of flip-chip mounting means, gap to semiconductor element and substrate demonstrates good fillibility, suppressed the generation of distortion simultaneously, and suppress the generation of the interface peel of semiconductor element and resin sealing portion, the moisture-proof reliability is good.This form is particularly conducive to seal in transfer molding and makes the encapsulation that is called the flip-chip package type, can obtain the high semiconductor device of reliability.
Description of drawings
By way of example with in order to illustrate clearlyer, as a reference at this accompanying drawing:
Figure 1A is the substrate sample floor map of the loading semiconductor element that uses when being used for estimating anti-embedding space property, and Figure 1B is the side elevational view of this sample.
Fig. 2 produces the orthographic plan of the state in space when being the resin-sealed above-mentioned sample of expression.
Fig. 3 A be expression estimate fillibility and take place interface Stripping from the time used mounting semiconductor element substrate sample plane figure, Fig. 3 B is its side elevational view.
Fig. 4 is the orthographic plan of expression with resin-sealed above-mentioned sample state.
Embodiment
Epoxy resin composition for encapsulating semiconductor of the present invention is to obtain with Resins, epoxy (A component), resol (B component), curing catalyst (C component) and specific inorganic filler (D component), usually, with Powdered or said composition is collapsed into sheet.
For above-mentioned Resins, epoxy (A component), do not limit especially, can use present known Resins, epoxy.For example, can use various Resins, epoxy such as dicyclopentadiene type Resins, epoxy, cresols phenolic resin varnish type epoxy resin, phenol novolak type epoxy resin, bisphenol-type epoxy resin, biphenyl type epoxy resin, trihydroxytoluene type.These can use separately or two or more share.In these Resins, epoxy, what particularly fusing point or softening temperature surpassed room temperature is preferred.For example, for the cresols phenolic resin varnish type epoxy resin, preferably use 60～110 ℃ of epoxy equivalent (weight)s 180～210, softening temperature.And, for above-mentioned 2 functional-type Resins, epoxy, preferably use 80～120 ℃ of epoxy equivalent (weight)s 180～210, fusing point.But the Resins, epoxy of above-mentioned 2 functional-type preferably contains at least 30 weight % in whole epoxy resin ingredient.Particularly, preferably use the Resins, epoxy of following array structure formula (1), structural formula (2) expression.
(in the formula (1), n be 0 or positive number).
(in the formula (2), n be 0 or positive number).
For Resins, epoxy (A component), the Resins, epoxy of preferred especially above-mentioned general formula (1) expression.In the above-mentioned formula (1), repeat number n is preferably 1～5 scope.And epoxy equivalent (weight) is preferably 160～180, softening temperature is 60～80 ℃.
In addition, under the situation of the Resins, epoxy of above-mentioned general formula (1) expression and other Resins, epoxy and usefulness, the ratio of the Resins, epoxy of above-mentioned general formula (1) expression in whole epoxy resin ingredient preferably is set at 70 weight % or more than the 70 weight %.
Resol (B composition) with above-mentioned Resins, epoxy (A composition) uses plays the effect of above-mentioned curing agent for epoxy resin, and it is not particularly limited, and can use known various resol at present.For example, use various resol such as aralkyl-type, dicyclopentadiene type, cresols phenolic varnish type, phenol phenolic varnish type, bisphenol type, trihydroxytoluene type, these can be separately or two or more share.In addition, for these resol, preferably hydroxyl equivalent is 70～250, softening temperature is 50～110 ℃.Account for all in the above-mentioned resol, the resol that contains 70 weight % aralkyl-type at least is preferred.Particularly, preferably use the resol of representing with following structural (3), (4).
(in the formula (3), n be 0 or positive number).
(in the formula (4), n be 0 or positive number).
Above-mentioned Resins, epoxy (A component) is preferably for the per 1 equivalent epoxy group(ing) in the Resins, epoxy with the ratio that cooperates of resol (B component), and the hydroxyl equivalent in the resol of Pei Heing is 0.7～1.5 equivalent with it.0.9～1.2 equivalent more preferably.
Curing catalyst (C component) for using with above-mentioned A component and B component is not particularly limited, and can use known before this various curing catalysts.For example, can use organophosphorus compounds such as tetraphenylphosphoniphenolate tetraphenyl boric acid ester, triphenylphosphine, 1,8-diazabicylo (5,4,0) undecylene-7,1, the diazabicylo chain alkene compound of 5-diazabicylo (4,3,0) nonene-5 grade etc.These compounds can use separately or two or more share.
The content of above-mentioned curing catalyst (C component) is benchmark with 100 weight parts (to call " part " in the following text) above-mentioned resol (B component), is preferably set to 1～20 part, more preferably 2～15 parts.That is, during less than 1 part, the Resins, epoxy of expectation (A component) is difficult to carry out with the curing reaction of resol (B component), is difficult to obtain sufficient solidified nature; When surpassing 20 parts, the tendency of infringement formability is arranged owing to the curing reaction excessive velocities.
The specific inorganic filler (D component) that uses simultaneously with above-mentioned A～C component is the spherical inorganic filler that obtains with specific organosilane coupler surface treatment.
The specific organosilane coupler that uses in the above-mentioned surface treatment contains methylpropenyl or propenyl, it is believed that the effect by the organosilane coupler that contains this organic group, has reduced the resistance of inorganic filler and organic constituent.And as above-mentioned specific organosilane coupler, concrete can enumerate each organosilane coupler of representing with following structural (5), structural formula (6), structural formula (7), structural formula (8) and structural formula (9).Wherein, from suppressing to embed the viewpoint in space most effectively, the preferred especially organosilane coupler that uses with following structural (9) expression.
As the spherical inorganic filler of above-mentioned surface-treated, for example, can use fused silica powder, talcum powder, SiO 2 powder (fused silica powder or ground silica etc.), aluminum oxide powder, aluminium nitride, silicon nitride powder etc.These materials can use separately or two or more share.Wherein, the angle of the linear expansivity of the cured article that obtains from reduction, the above-mentioned SiO 2 powder of preferred use, from the aspect of high fillibility and high workability, the fused silica powder in the above-mentioned SiO 2 powder (preferably spheroidal fused SiO 2 powder) is particularly preferred.
And.For its size distribution, the above content of preferable particle size 45 μ m or 45 μ m is 0.3 whole weight % or below the 0.3 weight %, and whole median sizes is 15 μ m or below the 15 μ m.The above content of special preferable particle size 45 μ m or 45 μ m is 0.2 whole weight % or below the .2 weight %, and median size is 11 μ m or below the 11 μ m.In addition, the following of content of the weighting agent that above-mentioned particle diameter 45 μ m or 45 μ m are above is limited to 0 weight %, and the following 3 μ m that are limited to of median size.That is, when the content of particle diameter 45 μ m or the weighting agent more than the 45 μ m exceeds 0.3 weight % of whole weighting agents, the fillibility variation of the slit of flip-chip portion.And, same when median size far exceeds 15 μ m, the fillibility variation of the slit of flip-chip portion.
In addition, in the present invention,, and use for example laser diffraction and scattering formula sedimentograph mensuration median size with the content of the weighting agent more than above-mentioned particle diameter 45 μ m of screen cloth (mesh) screening assay or the 45 μ m.And, use the sample of from masterbatch, extracting out arbitrarily, utilize above-mentioned screen cloth and determinator to measure the numerical value of above-mentioned screenings and median size.
Among the present invention, carry out the spherical inorganic filler that surface treatment obtains with above-mentioned specific organosilane coupler and can use together with other inorganic filler.At this moment, the spherical inorganic filler of median size 0.5～3 μ m preferably accounts for 5～50 weight % in whole inorganic filler (D component), especially preferably accounts for 5～20 weight % of whole inorganic fillers.That is, when being discontented with 5 weight %, surface-treated spherical inorganic filler content is very few, and viscosity increases sometimes; When surpassing 50 weight %, the specific surface area of silicon-dioxide increases, and the viscosity that is accompanied by sometimes under the low flow velocity increases.
For above-mentioned surface-treated spherical inorganic filler, preferably use the SiO 2 powder of spheroidal fused.And its median size is preferably 0.5～3 μ m, more preferably 0.6～2.9 μ m.That is, too small during less than 0.5 μ m when particle diameter, the specific surface area of silicon-dioxide increases, the viscosity increase down of low sometimes thereupon flow velocity.And when particle diameter is excessive when exceeding 3 μ m, viscosity increases thereupon sometimes.
As containing the inorganic filler that the above-mentioned specific organosilane coupler of a certain amount of usefulness carries out the spherical inorganic filler of median size 0.5～3 μ m that surface treatment obtains, be not particularly limited, can use known various weighting agents at present.For example, can use quartz glass powder, talcum powder, SiO 2 powder, alumina powder, aluminium nitride, alpha-silicon nitride powders etc.These inorganic fillers can use disintegrated, spherical or through milled processed etc. any.Wherein, from the angle of height filling, high workability, preferably use the fused silica powder.As above-mentioned fused silica powder, can enumerate the spheroidal fused SiO 2 powder, pulverize the fused silica powder, but, especially preferably use the spheroidal fused SiO 2 powder from the angle of flowability.And, as its median size, preferred 5～30 μ m, preferred especially 10～20 μ m.In addition, among the present invention, median size for example can be measured with laser diffraction and scattering formula sedimentograph and obtain.
As the surface-treated method being carried out on the surface of above-mentioned specific spherical inorganic filler with the organosilane coupler, be not particularly limited, can use in solvent the wet processed of mixing spherical inorganic filler and organosilane coupler, and the dry process etc. of processing organosilane coupler and spherical inorganic filler in the gas phase.
And the content of above-mentioned inorganic filler (D component) is preferably set at and accounts for 50～95 weight % in whole composition epoxy resins, preferred especially 70～90 weight %.That is, when being discontented with 50 weight %, the moisture uptake of sealing resin increases, and mechanical strength of resin descends sometimes, thus the tendency that when semiconductor subassembly refluxes, has easy generation crack and peel off.
In addition, in the epoxy resin composition for encapsulating semiconductor of the present invention, except above-mentioned A～D component, can suitably add fire retardant in case of necessity, flame retardant, releasing agent, pigment or tinting materials such as carbon black, the organosilane coupler of γ-glycidoxypropyltrime,hoxysilane, γ-Qiu Jibingjisanjiayangjiguiwan, gamma-amino ethylamino propyl trimethoxy silicane etc., other additive such as stress depressant.
As above-mentioned fire retardant, can enumerate halogen based flame retardants such as phenolic varnish type brominated epoxy resin, further,, can use antimonous oxide or antimony peroxide etc. as above-mentioned flame retardant.They can be separately or two or more share.
As above-mentioned releasing agent, can use compounds such as higher fatty acid, high-grade aliphatic ester, higher fatty acid calcium.For example, can enumerate carnauba wax or polyethylene kind wax etc., these can be separately or two or more share.
In addition, as above-mentioned stress depressant, can enumerate acrylonitrile-butadiene rubber.
Epoxy resin composition for encapsulating semiconductor of the present invention for example can followingly be made.That is, according to routine suitably mix above-mentioned A-D component and other additive of adding as required after, under heated condition, carry out melting mixing with mixing rolls such as double roll mills, at room temperature with its cooling curing.After this, pulverize, carry out series of steps such as compressing tablet in case of necessity and make by known method.
The sealing method of the semiconductor element of this use composition epoxy resin is not particularly limited, and can adopt common known molding methods such as transfer molding to carry out, and can realize semiconductor deviceization.
And, as the sealed object semiconductor device that uses this composition epoxy resin, for example, can enumerate the structure of semiconductor element with upside-down mounting, be installed to the flip-chip assembly on the substrate that forms wired circuit, sealing is filled with composition epoxy resin in the gap of above-mentioned semiconductor element and substrate.
Below, embodiment and comparative example are described in the lump.
At first, before embodiment, prepare following each component.
[Resins, epoxy a]
The Resins, epoxy (epoxy equivalent (weight) 170,69 ℃ of softening temperatures) of following structural (a) expression
[Resins, epoxy b]
The Resins, epoxy (epoxy equivalent (weight) 177,141 ℃ of fusing points) of following structural (b) expression
[Resins, epoxy c]
The Resins, epoxy (epoxy equivalent (weight) 195,107 ℃ of fusing points) of following structural (c) expression
[Resins, epoxy d]
The Resins, epoxy (epoxy equivalent (weight) 195,67 ℃ of fusing points) of following structural (d) expression
[resol a]
The resol (hydroxyl equivalent 210,73 ℃ of softening temperatures) of following structural (e) expression
[resol b]
The resol (hydroxyl equivalent 220,77 ℃ of softening temperatures) of following structural (f) expression
[resol c]
Phenol novolac resin (hydroxyl equivalent 107,64 ℃ of softening temperatures)
[resol d]
Phenol novolac resin (hydroxyl equivalent 107,85 ℃ of softening temperatures)
[resol e]
The resol (hydroxyl equivalent 172,67 ℃ of softening temperatures) of following structural (g) expression
[resol f]
The resol (hydroxyl equivalent 93,66 ℃ of softening temperatures) of following structural (h) expression
[releasing agent]
Carnauba wax
[curing catalyst]
Triphenylphosphine
[inorganic filler a1]
(chemical company of SHIN-ETSU HANTOTAI makes the organosilane coupler of 1g following structural (α) expression, KBE502) and 10g water 300ml acetone diluted, be injected in 1 liter of 100g spheroidal fused SiO 2 powder (median size 0.7 μ m) in the beaker, make muddy.Then, this mud is used magnetic stirrer stir about 15 hours.After the stirring, this mud immigration is covered with in the aluminium pallet of aluminium foil, dry in 105 ℃ of following evaporating solvents on hot-plate.After evaporation is dry, it was further heated 30 minutes down in 95 ℃ in moisture eliminator, obtain the above-mentioned inorganic filler a1 that handled spheroidal fused SiO 2 powder surface with the organosilane coupler.
[inorganic filler a2]
As the spheroidal fused SiO 2 powder, use the spheroidal fused SiO 2 powder of median size 3 μ m.In addition, by the same method of above-mentioned inorganic filler a1, make the inorganic filler a2 that handled spheroidal fused SiO 2 powder surface with the organosilane coupler.
[inorganic filler b1]
(manufacturing of chemical company of SHIN-ETSU HANTOTAI KBM803) substitutes the organosilane coupler to the organosilane coupler of representing with following structural (β).In addition, by the same method of above-mentioned inorganic filler a1, make the inorganic filler b1 that handled spheroidal fused SiO 2 powder surface with the organosilane coupler.
HS-C
3?H
6?Si(CH
3)
3…(β)
[inorganic filler b2]
Organosilane coupler (chemical company of SHIN-ETSU HANTOTAI makes, and KBE 903) with following structural (γ) expression substitutes the organosilane coupler.In addition, by the same method of above-mentioned inorganic filler a1, make the inorganic filler b2 that handled spheroidal fused SiO 2 powder surface with the organosilane coupler.
[inorganic filler c]
Spheroidal fused SiO 2 powder (median size 13.2 μ m)
[inorganic filler d]
Spheroidal fused SiO 2 powder (median size 16.2 μ m)
[inorganic filler a3]
(chemical company of SHIN-ETSU HANTOTAI makes the organosilane coupler of 1g following structural (α) expression, KBE502) and 10g water 300ml acetone diluted, be injected in 1 liter of 100g spheroidal fused SiO 2 powder (above screenings 0.17 weight %, median size 11 μ m:FB-7SDC, the electrochemical industry society of particle diameter 45 μ m or 45 μ m makes) in the beaker, make muddy.Then, this mud is used magnetic stirrer stir about 15 hours.After the stirring, the mud immigration is covered with in the aluminium pallet of aluminium foil, dry in 105 ℃ of following evaporating solvents on hot-plate.After evaporation is dry, it was further heated 30 minutes down in 95 ℃ in moisture eliminator, obtain the inorganic filler a3 that handled with the organosilane coupler on above-mentioned spheroidal fused SiO 2 powder surface.
[inorganic filler a4]
As the spheroidal fused SiO 2 powder, use the spheroidal fused SiO 2 powder (FB-8S that electrochemical industry society makes) of the median size 15 μ m of the above screenings 0.3 weight % of particle diameter 45 μ m or 45 μ m.In addition, by the above-mentioned and same method of inorganic filler a3, make the inorganic filler a4 that handles spheroidal fused SiO 2 powder surface with the organosilane coupler.
[inorganic filler b3]
Screenings 0.17 weight % more than particle diameter 45 μ m or the 45 μ m, the spheroidal fused SiO 2 powder of median size 11 μ m.
[inorganic filler b4]
As the spheroidal fused SiO 2 powder, use the spheroidal fused SiO 2 powder (MSR-FC408 that Long Senshe makes) of above screenings 5.0 weight %, median size 15 μ m of particle diameter 45 μ m or 45 μ m.In addition, by the above-mentioned and same method of inorganic filler a3, make the inorganic filler b4 that handled spheroidal fused SiO 2 powder surface with the organosilane coupler.
[inorganic filler b5]
As the spheroidal fused SiO 2 powder, use the above screenings 0.5 weight % of particle diameter 45 μ m or 45 μ m, the spheroidal fused SiO 2 powder of median size 20 μ m.In addition, by the above-mentioned and same method of inorganic filler a3, make the inorganic filler b5 that handled spheroidal fused SiO 2 powder surface with the organosilane coupler.
[inorganic filler b6]
(chemistry society of SHIN-ETSU HANTOTAI makes the organosilane coupler that the organosilane coupler is represented with following structural (β), KBM803) substitutes.In addition, press and the same method of above-mentioned inorganic filler a3, make the inorganic filler b6 that handled spheroidal fused SiO 2 powder surface with the organosilane coupler.
HS-C
3?H
6?Si(OCH
3)
3…(β)
[embodiment 1～6, comparative example 1～9]
Each component of following table 1～table 3 expression is cooperated according to the ratio shown in this table, double roll mill (100 ℃ of temperature) melting mixing 3 minutes.Then, after this melts cooling, it is pulverized, obtain required epoxy resin composition for encapsulating semiconductor.And, " part " expression weight part.
[table 1] (part)
[table 2] (part)
[table 3] (part)
Use these composition epoxy resins that obtains by embodiment and comparative example,, measure its anti-embedding space property, distortion, pressure cooker boiling experiment (PCT test) is estimated by following method.The result who obtains is shown in following table 4～table 6 in the lump.
[anti-embedding space property]
Shown in Figure 1A and Figure 1B,, make 9 semiconductor elements 1 (chip size: 10mm * 10mm * thick 0.5mm) by being installed on the substrate 2 (size: 50mm * 50mm * thick 0.3mm).
And, use the composition epoxy resin that obtains in embodiment and the comparative example, the above-mentioned substrate that semiconductor element has been installed is of a size of at die cavity: carry out transfer molding (condition: 175 ℃ * 90 seconds) in the mould of 50mm * 50mm * dark 0.7mm, as shown in Figure 2, form sealing resin layer 3 in the mode that comprises the semiconductor element 1 on the substrate 2, carry out resin-sealed.Calculate the number of components of the generation outer gap 4 on the semiconductor element 1.And, carry out transfer molding owing to made 2 above-mentioned substrates that 9 semiconductor elements 1 are installed on substrate 2, so the number of the assembly of making is 18.
[determining of distortion]
Determine the deflection of the semiconductor subassembly that above-mentioned manufacturing obtains by laxative remedy.That is, measure the length of the maximum distortion part of the horizontal plane of semiconductor subassembly when horizontal positioned.Mensuration is carried out with opticmicroscope.
[PCT test]
In the PCT container under the condition of the above-mentioned 130 ℃ * 85%RH of semiconductor subassembly input that makes, placed 196 hours.Use this semiconductor subassembly, confirm to have or not interface peel in the semiconductor subassembly, and calculate the number of components that interface peel takes place with ultrasonic wave flaw detection device.And, the number of the assembly of manufacturing with above-mentioned the same be 18.
[table 4]
[table 5]
[table 6]
Can find out that from The above results the space does not appear in embodiment sample fully on semiconductor element, and obtain the high single face molded type semiconductor device of reliability.
In contrast, comparative example 1 sample has occurred the space because the content of surface-treated trickle spheroidal fused silicon-dioxide is very few on its semiconductor element.The sample of comparative example 2,3 has occurred the space because the content of its surface-treated trickle spheroidal fused silicon-dioxide is too much on its semiconductor element.In addition, the sample of comparative example 4,5 has all used the trickle spheroidal fused silicon-dioxide that obtains by the organosilane coupler surface treatment that does not contain propenyl or methyl propenyl, the effect that the space that all is not inhibited takes place.And comparative example 6～9 has occurred the space because the content of surface-treated trickle spheroidal fused silicon-dioxide is too much on its semiconductor element.
[embodiment 17～32, comparative example 10～23]
Each component of following table 7～table 10 expression is cooperated according to the ratio shown in this table, and melting mixing is 3 minutes in double roll mill (100 ℃ of temperature).Then, after this melts cooling it being pulverized, obtain required epoxy resin composition for encapsulating semiconductor.And, " part " expression weight part.
[table 7] (part)
[table 8] (part)
[table 9] (part)
[table 10] (part)
Use these composition epoxy resins that obtains by embodiment and comparative example,, measure its unfilled generation, distortion, pressure cooker boiling experiment (PCT test) is estimated by following method.The result who obtains is shown in following table 11～table 14 in the lump.
[generation of fillibility interface peel]
Shown in Fig. 3 A and Fig. 3 B,, following 9 semiconductor elements 5 (chip size: the 7mm * 7mm * thick 0.3mm) upside-down mounting that is provided with 100 SnPb63 salient points 6 makes by being installed on the substrate 7 (size: 50mm * 50mm * thick 0.3mm).
And, the composition epoxy resin that uses embodiment and comparative example to obtain, the substrate that above-mentioned upside-down mounting is installed is of a size of at die cavity: carry out transfer molding (condition: 175 ℃ * 90 seconds) in the mould of 50mm * 50mm * dark 0.7mm, then carry out 175 ℃ * 5 hours post-hardening.As shown in Figure 4, the gap that substrate 7 and semiconductor element are 5 is with resin-sealed, forms sealing resin layer 8 simultaneously on substrate 7, carry out resin-sealed, to comprise the semiconductor element 5 that upside-down mounting is installed.After this, as shown in Figure 4, by along dotted line *, each semiconductor element 5 is cut into single cell, makes semiconductor subassembly.This semiconductor subassembly is PBGA (plasticity ball grid array, size: 16mm * 16mm * sealing resin layer 8 thick 0.7mm).Calculate the number of components of the not filling part that exists in the gap of determining semiconductor element 5 and substrate 7.And,, observe its section and determine above-mentioned not filling part with ultrasonic wave Crack Detection device cutting assembly.And, carry out transfer molding owing to made 2 substrates that 9 semiconductor elements 5 (with reference to Fig. 3 A, 3B) have been installed on substrate 7, so the number of components of making is 18.
[determining of distortion]
The deflection of the above-mentioned semiconductor subassembly that makes is following to be determined.That is, measure the length of the maximum distortion part of the horizontal plane of semiconductor subassembly when horizontal positioned.Use light microscope determining.And general, deflection is that 50 μ m or the following situation of 5 μ m are good.
[PCT test]
The above-mentioned semiconductor subassembly that makes is put into the PCT container under the condition of 130 ℃ * 85%RH, placed 196 hours.Use this semiconductor subassembly, confirm to have or not interface peel in the semiconductor subassembly, and calculate the number of components that interface peel takes place with ultrasonic wave flaw detection device.And, the number of components of manufacturing with above-mentioned the same be 18.
[table 11]
[table 12]
[table 13]
[table 14]
Can find out from The above results, the fillibility in the semiconductor element of embodiment sample and the gap of substrate well, interface peel does not take place, all deflection is at 50 μ m or below the 50 μ m.And, in the PCT test, shown good result, can obtain the good semiconductor device of moisture-proof reliability.
In contrast, comparative example 10～12 samples define not filling part owing to used without surface-treated trickle spheroidal fused silicon-dioxide.The sample of comparative example 13～15, the surface-treated trickle spheroidal fused silicon-dioxide owing to having used the above screenings of particle diameter 45 μ m or 45 μ m greater than 3.0 weight % defines a large amount of not filling parts.In addition, the sample of comparative example 16,17 owing to do not use specific Resins, epoxy, though fillibility is good, confirm to exist the interface peel between semiconductor element and the sealing resin layer, and deflection is very big.In addition, comparative example 18～20 is because not filling part has appearred in the big affirmation of particle diameter; In addition, comparative example 21～23 owing to do not use surface treatment agent of the present invention, not filling part occurs.
Though the present invention has carried out in detail and specific description with reference to embodiment, those skilled in the art's various changes and correction without departing from the spirit and scope of the present invention all is feasible.
The application is based on the Japanese patent application (special hope 2004-143861) of application on May 13rd, 2004, and the Japanese patent application of application on May 13rd, 2004 (spy is willing to 2004-143862), so its content can be incorporated in this as a reference.
Claims (4)
1. epoxy resin composition for encapsulating semiconductor that contains following (A) component, (B) component, (C) component, (D) component:
(A) Resins, epoxy;
(B) resol;
(C) curing catalyst;
(D) carried out the spherical inorganic filler of surface-treated with the organosilane coupler that contains propenyl or methylpropenyl,
Wherein, particle diameter is that the content of the spherical inorganic filler of above (D) component of 45 μ m or 45 μ m is 0.3 weight % or below the 0.3 weight %, and (D) median size of the spherical inorganic filler of component is 15 μ m or below the 15 μ m.
2. according to the epoxy resin composition for encapsulating semiconductor of claim 1 record, in the spherical inorganic filler of (D) component, median size is that the spherical inorganic filler of 0.5～3 μ m accounts for 5～50 weight % in whole inorganic fillers.
3. according to the epoxy resin composition for encapsulating semiconductor of claim 1 record, wherein, (A) Resins, epoxy of component is the Resins, epoxy by following general formula (1) expression,
, wherein, n is 0 or positive number in the formula (1).
4. a semiconductor device wherein, comprises the epoxy resin composition for encapsulating semiconductor and the semiconductor element of claim 1 record, and this semiconductor element carries out resin-sealed with this composition epoxy resin.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004143861A JP4421939B2 (en) | 2004-05-13 | 2004-05-13 | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same |
| JP143861/04 | 2004-05-13 | ||
| JP143862/04 | 2004-05-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1696169A CN1696169A (en) | 2005-11-16 |
| CN100391995C true CN100391995C (en) | 2008-06-04 |
Family
ID=35349076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100783426A Expired - Fee Related CN100391995C (en) | 2004-05-13 | 2005-05-13 | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4421939B2 (en) |
| CN (1) | CN100391995C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111684036A (en) * | 2018-11-14 | 2020-09-18 | 株式会社Lg化学 | Resin composition for bonding semiconductor, adhesive film for semiconductor using same, dicing die-bonding film, and method for dicing semiconductor wafer |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4386453B2 (en) | 2006-05-31 | 2009-12-16 | 信越化学工業株式会社 | Resin-sealed semiconductor device |
| JP5598343B2 (en) * | 2011-01-17 | 2014-10-01 | 信越化学工業株式会社 | Liquid epoxy resin composition for semiconductor encapsulation and semiconductor device |
| JP6880567B2 (en) * | 2016-04-26 | 2021-06-02 | 住友ベークライト株式会社 | Manufacturing method of epoxy resin composition for semiconductor encapsulation and semiconductor device |
| CN109971127A (en) * | 2019-03-29 | 2019-07-05 | 武汉市三选科技有限公司 | Being fanned out to shape wafer-level packaging liquid encapsulating material reduces the method for viscosity and the liquid encapsulating material of acquisition |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08311310A (en) * | 1995-05-18 | 1996-11-26 | Matsushita Electric Works Ltd | Epoxy resin composition for sealing and semiconductor device using the same |
| CN1288914A (en) * | 2000-08-30 | 2001-03-28 | 中国科学院化学研究所 | Epoxy resin composite containing compound inorganic stuffing |
| CN1348481A (en) * | 1999-02-25 | 2002-05-08 | 日东电工株式会社 | Resin composition for semiconductor encapsulation, semiconductor device obtained with the same, and process for producing semiconductor device |
| JP2003253095A (en) * | 2002-03-05 | 2003-09-10 | Nitto Denko Corp | Resin composition for sealing semiconductor and semiconductor device using the same |
-
2004
- 2004-05-13 JP JP2004143861A patent/JP4421939B2/en not_active Expired - Lifetime
-
2005
- 2005-05-13 CN CNB2005100783426A patent/CN100391995C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08311310A (en) * | 1995-05-18 | 1996-11-26 | Matsushita Electric Works Ltd | Epoxy resin composition for sealing and semiconductor device using the same |
| CN1348481A (en) * | 1999-02-25 | 2002-05-08 | 日东电工株式会社 | Resin composition for semiconductor encapsulation, semiconductor device obtained with the same, and process for producing semiconductor device |
| CN1288914A (en) * | 2000-08-30 | 2001-03-28 | 中国科学院化学研究所 | Epoxy resin composite containing compound inorganic stuffing |
| JP2003253095A (en) * | 2002-03-05 | 2003-09-10 | Nitto Denko Corp | Resin composition for sealing semiconductor and semiconductor device using the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111684036A (en) * | 2018-11-14 | 2020-09-18 | 株式会社Lg化学 | Resin composition for bonding semiconductor, adhesive film for semiconductor using same, dicing die-bonding film, and method for dicing semiconductor wafer |
| CN111684036B (en) * | 2018-11-14 | 2022-08-09 | 株式会社Lg化学 | Resin composition for bonding semiconductor, adhesive film for semiconductor using same, dicing die-bonding film, and method for dicing semiconductor wafer |
| US11879075B2 (en) | 2018-11-14 | 2024-01-23 | Lg Chem, Ltd. | Resin composition for bonding semiconductors, adhesive film for semiconductor using the same, dicing die bonding film, and method for dicing semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4421939B2 (en) | 2010-02-24 |
| CN1696169A (en) | 2005-11-16 |
| JP2005325209A (en) | 2005-11-24 |
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