CN1696169A - Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same - Google Patents
Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same Download PDFInfo
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- CN1696169A CN1696169A CNA2005100783426A CN200510078342A CN1696169A CN 1696169 A CN1696169 A CN 1696169A CN A2005100783426 A CNA2005100783426 A CN A2005100783426A CN 200510078342 A CN200510078342 A CN 200510078342A CN 1696169 A CN1696169 A CN 1696169A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
PROBLEM TO BE SOLVED: To provide an epoxy resin composition for sealing a semiconductor excellent in fillability and void resistance, for example, in a flip chip package and capable of suppressing generation of warpage.
Description
Invention field
The present invention relates to the single facer type encapsulation of commonly referred to as ball grid array (BGA) encapsulation, and in the encapsulation of referred to as flip-chip package type, mouldability and the excellent epoxy resin composition for encapsulating semiconductor of moisture-proof reliability and the semiconductor device using the composition.
Background technique
From the viewpoint of can loading and unloading the viewpoint of protection external environment and semiconductor element, the semiconductor elements such as transistor, IC, LSI are sealed by plastic package etc. is made semiconductor device.Recently, it along with the requirement to semiconductor device slimming and high-density installation, needs the encapsulation for making the single facers type such as BGA package thinning strongly and is laid out semiconductor component packing in the state of multiple overlappings.
As excellent sealing materials such as mobility for this BGA package, the sealing material (reference literature 1) for for example having cooperated the compound indicated with general formula (A) has been disclosed.
(in formula (A), R1~R6For hydrogen atom, carbon number 1~12 alkyl or 2,3- glycidoxy, they both can be identical or different.But at least two of which 2,3- glycidoxy).
In addition, recently, with the requirement for improving performance of semiconductor devices, the method (flip chip) in semiconductor element mounting to the substrate for forming wired circuit is just concerned by people with the structure of upside-down mounting.In the resin seal of this construction packages, all the time, use liquid resin composition as sealing material, between semiconductor element and the gap of substrate in a manner of osmotic pressure filling sealing, but from the viewpoint of production and reliability, the encapsulating method of transfer molding mode is being studied.
As the sealing material used when making this flip-chip package by transfer molding, have been disclosed for example, the use of cooperation partial size being the sealing material (reference literature 2) of 24 μm or 24 μm SiO 2 powders below.
[document 1] Japanese Laid-Open Patent Publication 8-111468 bulletin
[document 2] special open 2000-281878 bulletin
Summary of the invention
But for the component of above-mentioned laminating single facer type, since the balance of the flowing velocity of the sealing material between the flowing velocity and semiconductor element of the sealing material on semiconductor element is destroyed, there are problems that insertion gap occur.
In addition, forming using above-mentioned sealing material using shifting formwork, when with resin seal flip-chip component, following problems can be generated: (1) be formed in the gap of semiconductor element and substrate and be not filled by part, therefore produce gap；(2) in moisture-proof reliability evaluation after shaping, it may appear that the interface peel of semiconductor element and sealing resin and the interface peel with the solder resisting agent part on substrate；(3) flip-chip component deforms.
In view of the foregoing, the object of the present invention is to provide fillibilities and the porosity excellent epoxy resin composition for encapsulating semiconductor of resistance to insertion and the semiconductor device for using the composition.
Present inventor's composition epoxy resin used in the resin seal of porosity excellent, in single facer type the component of resistance to insertion in order to obtain, carries out a series of careful studies.As a result, it has been found that, if using the inorganic filler for the subtle spherical inorganic filler being surface-treated containing specific quantity with above-mentioned specific organo-silane coupling agents, by inference, the resistance of inorganic filler and resin Composition reduces, thus, the flowing sexual balance of sealing material is improved, being embedded in gap is inhibited.In addition, the present inventors are that necessary condition carries out a series of careful studies to the composition epoxy resin for forming the excellent sealing material of moisture-proof reliability to invest fillibility.As a result, it has been found that, if using specific epoxy resin [(A) ingredient], and using the spherical inorganic filler of specified particle diameter obtained from being surface-treated through specific organo-silane coupling agents, by inference, resin component and the interfacial resistance of inorganic filler agent reduce, especially play the role of reducing slit viscosity, thus, such as, it realizes the fillibility raising in the gap of the semiconductor device and substrate in flip-chip component, inhibit the generation in gap, and moisture-proof reliability is excellent, flexural property improves.The present invention is completed by further conscientious research based on these discoveries.
The present invention includes following form.
1. epoxy resin composition for encapsulating semiconductor of the one kind containing following (A) component, (B) component, (C) component, (D) component:
(A) epoxy resin；
(B) phenolic resin；
(C) curing accelerator；
(D) the spherical inorganic filler of surface treatment was carried out with the organo-silane coupling agents containing acrylic or methylpropenyl.
2. the epoxy resin composition for encapsulating semiconductor recorded according to the 1st, wherein in the spherical inorganic filler of (D) component, the spherical inorganic filler that average grain diameter is 0.5~3 μm accounts for 5~50 weight % in whole inorganic fillers.
3. the epoxy resin composition for encapsulating semiconductor recorded according to the 1st, wherein, (D) 45 μm or 45 μm of the partial size of the spherical inorganic filler of component or more of content is 0.3 weight % or 0.3 weight % hereinafter, and average grain diameter is 15 μm or 15 μm or less.
4. the epoxy resin composition for encapsulating semiconductor recorded according to the 1st, wherein the epoxy resin of (A) component is the epoxy resin indicated by general formula (1).
(n is 0 or positive number in formula (1)).
5. a kind of semiconductor device, wherein the semiconductor encapsulating epoxy resin and semiconductor element recorded including the 1st, the semiconductor element carry out resin seal with the composition epoxy resin.
The present invention relates to a kind of epoxy resin composition for encapsulating semiconductor containing inorganic filler, the spherical inorganic filler which is surface-treated containing useful specific organo-silane coupling agents has excellent fillibility and resistance to insertion porosity.Especially for the epoxy resin composition for encapsulating semiconductor containing inorganic filler, wherein, the inorganic filler contains the form for the subtle spherical inorganic filler of specific quantity being surface-treated with aforementioned specific organo-silane coupling agents, due to there is no the balance of flowing velocity when destroying resin seal, resin seal is carried out well, therefore inhibit the semiconductor device of the generation in insertion gap, available high reliablity, in particular, the semiconductor device that the so-called single facer type for being referred to as BGA package encapsulates related high reliablity can be obtained.And, for the form of the epoxy resin composition for encapsulating semiconductor of the spherical inorganic filler of the aforementioned specific epoxy resin indicated with general formula (1) and the aforementioned specified particle diameter being surface-treated containing useful specific organo-silane coupling agents, especially in the encapsulation of flip-chip mounting means, excellent fillibility is shown to the gap of semiconductor element and substrate, the generation of deformation is inhibited simultaneously, and inhibit the generation of the interface peel of semiconductor element and resin sealing portion, moisture-proof reliability is excellent.This form is particularly conducive to the encapsulation that the sealing manufacture in transfer molding is referred to as flip-chip package type, the semiconductor device of high reliablity can be obtained.
Detailed description of the invention
By way of example and in order to illustrate that must become apparent from, in this attached drawing as reference:
Figure 1A be for evaluate it is resistance to insertion it is porosity when use loading semiconductor element substrate sample floor map, Figure 1B is the side view of the sample.
Fig. 2 is the plan view that the state in gap is generated when indicating the above-mentioned sample of resin seal.
Fig. 3 A is to indicate evaluation fillibility and the sample plane figure that semiconductor element used when interface peel carries substrate occurs, and Fig. 3 B is its side view.
Fig. 4 is the plan view indicated with the above-mentioned sample state of resin seal.
Detailed description of the invention
Epoxy resin composition for encapsulating semiconductor of the invention epoxy resin (component A), phenolic resin (B component), curing accelerator (component C) and specific inorganic filler (D component) obtain, in general, with powdered or the composition is collapsed into sheet.
It for above-mentioned epoxy resin (component A), does not limit particularly, currently known epoxy resin can be used.It is, for example, possible to use the various epoxy resin such as dicyclopentadiene type epoxy resin, cresol novolak type epoxy resin, phenol novolak type epoxy resin, bisphenol-type epoxy resin, biphenyl type epoxy resin, trihydroxytoluene type.These can be used alone or two or more is shared.In these epoxy resin, it is preferred that especially fusing point or softening point, which are more than room temperature,.For example, for cresol novolak type epoxy resin, it is preferred to use epoxide equivalent 180~210,60~110 DEG C of softening point.Moreover, for above-mentioned 2 functional-type epoxy resin, it is preferred to use epoxide equivalent 180~210,80~120 DEG C of fusing point.But the epoxy resin of above-mentioned 2 functional-type preferably contains at least 30 weight % in whole epoxy resin ingredients.Specifically, it is preferred to use the epoxy resin indicated such as following structural (1), structural formula (2).
(in formula (1), n is 0 or positive number).
(in formula (2), n is 0 or positive number).
For epoxy resin (component A), the epoxy resin of particularly preferably above-mentioned general formula (1) expression.In above-mentioned formula (1), repeat number n is preferably 1~5 range.Also, epoxide equivalent is preferably that 160~180, softening point is 60~80 DEG C.
Furthermore, in the case where the epoxy resin that above-mentioned general formula (1) indicates is used in combination with other epoxy resin, the epoxy resin that above-mentioned general formula (1) indicates is preferably set for 70 weight % or 70 weight % or more in the ratio in whole epoxy resin ingredients.
The phenolic resin (B component) being used together with above-mentioned epoxy resin (A ingredient), plays the role of the curing agent of above-mentioned epoxy resin, is not particularly limited to it, and the various phenolic resin being currently known can be used.For example, these can individually or two or more is shared using various phenolic resin such as aralkyl-type, dicyclopentadiene type, cresol novolak type, phenol novolak type, bisphenol type, trihydroxytoluene types.In addition, for these phenolic resin, best hydroxyl equivalent is 70~250, softening point is 50~110 DEG C.It accounts for whole in above-mentioned phenolic resin, is at least preferred containing the phenolic resin of 70 weight % aralkyl-types.Specifically, it is preferred to use the phenolic resin indicated with following structural (3), (4).
(in formula (3), n is 0 or positive number).
(in formula (4), n is 0 or positive number).
For the compounding ratio of above-mentioned epoxy resin (component A) and phenolic resin (B component) preferably for every 1 equivalent epoxy group in epoxy resin, the hydroxyl equivalent in matched phenolic resin is 0.7~1.5 equivalent.More preferably 0.9~1.2 equivalent.
It for the curing accelerator (component C) being used together with above-mentioned component A with B component, is not particularly limited, heretofore known various curing accelerators can be used.It is, for example, possible to use the organophosphorus compounds such as tetraphenylphosphoniphenolate tetraphenylborate, triphenylphosphine, 1,8- diazabicylos (5,4,0) endecatylene -7,1, the diazabicylo chain alkene compound etc. of 5- diazabicylo (4,3,0) nonene -5 etc..These compounds can be used alone or two or more is shared.
The content of above-mentioned curing accelerator (component C) is preferably set to 1~20 part, more preferably 2~15 parts on the basis of the above-mentioned phenolic resin (B component) of 100 parts by weight (hereinafter referred to as " part ").That is, desired epoxy resin (component A) and the curing reaction of phenolic resin (B component) are difficult to carry out, it is difficult to obtain sufficient curability at less than 1 part；When more than 20 parts, have the tendency that damaging mouldability due to curing reaction excessive velocities.
The specific inorganic filler (D component) used simultaneously with above-mentioned A~component C is the spherical inorganic filler being surface-treated with specific organo-silane coupling agents.
Specific organo-silane coupling agents used in above-mentioned surface treatment contain methylpropenyl or acrylic, it is believed that reducing the resistance of inorganic filler and organic component by the effect of the organo-silane coupling agents containing this organic group.And, as above-mentioned specific organo-silane coupling agents, each organo-silane coupling agents indicated with following structural (5), structural formula (6), structural formula (7), structural formula (8) and structural formula (9) can be specifically enumerated.Wherein, from the viewpoint of most effectively inhibiting insertion gap, the organo-silane coupling agents indicated with following structural (9) are particularly preferably used.
As the spherical inorganic filler of above-mentioned surface treatment, it is, for example, possible to use fused silica powder, talcum powder, SiO 2 powder (fused silica powder or ground silica etc.), alumina powder, aluminium nitride, silicon nitride powders etc..These substances can be used alone or two or more share.Wherein, from the angle for the linear expansion coefficient for reducing obtained solidfied material, it is preferable to use above-mentioned SiO 2 powders, from the fused silica powder (preferably spheroidal fused SiO 2 powder) in high fillibility and high fluidity aspect, above-mentioned SiO 2 powder be particularly preferred.
And.For its particle diameter distribution, 45 μm or 45 μm of preferable particle size or more of content is whole 0.3 weight % or 0.3 weight % hereinafter, and whole average grain diameters is 15 μm or 15 μm or less.Particularly preferably 45 μm or 45 μm of partial size or more of content is 0.2 whole weight % or .2 weight % hereinafter, and average grain diameter is 11 μm or 11 μm or less.In addition, the lower limit of the content of 45 μm or 45 μm of above-mentioned partial size or more of filler is 0 weight %, and the lower limit of average grain diameter is 3 μm.That is, the fillibility of the slit in flip-chip portion is deteriorated when the content of 45 μm or 45 μm of partial size or more of filler exceeds the 0.3 weight % for being stuffed entirely with agent.Also, when average grain diameter is far beyond 15 μm, equally, the fillibility of the slit in flip-chip portion is deteriorated.
In addition, in the present invention, with the content of 45 μm or 45 μm of the above-mentioned partial size of sieve (mesh) screening test or more of filler, and average grain diameter is measured using such as laser diffraction and scattering formula sedimentograph.Also, with the sample arbitrarily extracted out from masterbatch, the numerical value of above-mentioned sieve residue and average grain diameter is measured using above-mentioned sieve and analyzer.
In the present invention, the spherical inorganic filler being surface-treated with above-mentioned specific organo-silane coupling agents can be used together with other inorganic fillers.At this moment, 0.5~3 μm of average grain diameter of spherical inorganic filler preferably accounts for 5~50 weight % in whole inorganic fillers (D component), particularly preferably accounts for 5~20 weight % of whole inorganic fillers.That is, surface-treated spherical inorganic filling agent content is very few, and viscosity increases sometimes as discontented 5 weight %；When more than 50 weight %, the specific surface area of silica increases, and the viscosity being sometimes associated under low flow velocity increases.
For above-mentioned surface-treated spherical inorganic filler, it is preferred to use the SiO 2 powder of spheroidal fused.Also, its average grain diameter is preferably 0.5~3 μm, and more preferable 0.6~2.9 μm.That is, when partial size it is too small less than 0.5 μm when, the specific surface area of silica increases, and the viscosity under low flow velocity increases sometimes therewith.Also, when partial size is excessive exceeds 3 μm, viscosity increases therewith sometimes.
It as the inorganic filler of the spherical inorganic filler containing a certain amount of 0.5~3 μm of average grain diameter being surface-treated with above-mentioned specific organo-silane coupling agents, is not particularly limited, the various fillers being currently known can be used.It is, for example, possible to use quartz glass powder, talcum powder, SiO 2 powder, alumina powder, aluminium nitride, alpha-silicon nitride powders etc..Any one such as comminution, spherical or ground processing can be used in these inorganic fillers.Wherein, it is filled from height, the angle of high fluidity is, it is preferable to use fused silica powder.As above-mentioned fused silica powder, spheroidal fused SiO 2 powder can be enumerated, crush fused silica powder, but from the angle of mobility, particularly preferably use spheroidal fused SiO 2 powder.Also, as its average grain diameter, preferably 5~30 μm, particularly preferred 10~20 μm.In addition, average grain diameter for example can measure to obtain with laser diffraction and scattering formula sedimentograph in the present invention.
As the method being surface-treated with surface of the organo-silane coupling agents to above-mentioned specific spherical inorganic filler, it is not particularly limited, it can be used in the wet processed and gas phase that mix spherical inorganic filler and organo-silane coupling agents in a solvent and handle organo-silane coupling agents and the dry process of spherical inorganic filler etc..
Also, the content of above-mentioned inorganic filler (D component), which is preferably set in whole composition epoxy resins, accounts for 50~95 weight %, particularly preferred 70~90 weight %.That is, as discontented 50 weight %, the hygroscopic capacity of sealing resin increases, and mechanical strength of resin declines sometimes, thus in semiconductor subassembly reflux with the tendency for being also easy to produce crack and removing.
Furthermore, in epoxy resin composition for encapsulating semiconductor of the invention, other than above-mentioned A~D component, it can be properly joined into fire retardant when necessary, flame retardant, release agent, the pigment such as carbon black or colorant, the organo-silane coupling agents of γ-glycidoxypropyltrime,hoxysilane, γ mercaptopropyitrimethoxy silane, gamma-amino diethylaminobutyyl trimethoxy silane etc., the others additive such as stress depressant.
As above-mentioned fire retardant, the halogen based flame retardant such as phenolic varnish type brominated epoxy resin can be enumerated, further, as above-mentioned flame retardant, antimony oxide or antimony pentoxide etc. can be used.They can individually or two or more is shared.
As above-mentioned release agent, the compounds such as higher fatty acids, high-grade aliphatic ester, higher fatty acid calcium can be used.For example, Brazil wax or polyethylene kind wax etc. can be enumerated, these can individually or two or more is shared.
In addition, acrylonitrile-butadiene rubber can be enumerated as above-mentioned stress depressant.
Epoxy resin composition for encapsulating semiconductor of the invention, such as can be manufactured as follows.That is, carrying out melting mixing in a heated state after according to the conventional other additives for suitably mixing above-mentioned A-D component and being added as needed with kneading machines such as double roll mills, being cooled to solidify at room temperature.After this, it is crushed by well known method, carries out the series of steps such as tabletting when necessary to manufacture.
The encapsulating method of this semiconductor element using composition epoxy resin, is not particularly limited, can be carried out using molding methods well known to common transfer molding etc., semiconductor device may be implemented.
And, as the sealed object semiconductor device of this composition epoxy resin is used, for example, can enumerate semiconductor element with the structure of upside-down mounting, it is filled and is sealed with composition epoxy resin in the gap of the flip-chip component being installed on the substrate to form wired circuit, above-mentioned semiconductor element and substrate.
In the following, being illustrated together to embodiment and comparative example.
Firstly, preparing following ingredients before embodiment.
[epoxy resin a]
The epoxy resin (epoxide equivalent 170,69 DEG C of softening point) that following structural (a) indicates
[epoxy resin b]
The epoxy resin (epoxide equivalent 177,141 DEG C of fusing point) that following structural (b) indicates
[epoxy resin c]
The epoxy resin (epoxide equivalent 195,107 DEG C of fusing point) that following structural (c) indicates
[epoxy resin d]
The epoxy resin (epoxide equivalent 195,67 DEG C of fusing point) that following structural (d) indicates
[phenolic resin a]
The phenolic resin (hydroxyl equivalent 210,73 DEG C of softening point) that following structural (e) indicates
[phenolic resin b]
The phenolic resin (hydroxyl equivalent 220,77 DEG C of softening point) that following structural (f) indicates
[phenolic resin c]
Phenol resol resins (hydroxyl equivalent 107,64 DEG C of softening point)
[phenolic resin d]
Phenol resol resins (hydroxyl equivalent 107,85 DEG C of softening point)
[phenolic resin e]
The phenolic resin (hydroxyl equivalent 172,67 DEG C of softening point) that following structural (g) indicates
[phenolic resin f]
The phenolic resin (hydroxyl equivalent 93,66 DEG C of softening point) that following structural (h) indicates
[release agent]
Brazil wax
[curing accelerator]
Triphenylphosphine
[inorganic filler a1]
Organo-silane coupling agents (chemical company, the SHIN-ETSU HANTOTAI manufacture that 1g following structural (α) is indicated, KBE502 it) is diluted with 10g water with 300ml acetone, it is injected into the 100g spheroidal fused SiO 2 powder in 1 liter of beaker (0.7 μm of average grain diameter), muddy is made.Then, the mud with magnetic stirrer stir about 15 hours.After stirring, mud immigration is covered in the aluminium pallet of aluminium foil, it is dry to evaporate solvent at 105 DEG C on hot plate.After evaporation is dry, it is further heated 30 minutes at 95 DEG C in drier, the above-mentioned inorganic filler a1 for processing spheroidal fused SiO 2 powder surface with organo-silane coupling agents is obtained.
[inorganic filler a2]
As spheroidal fused SiO 2 powder, 3 μm of average grain diameter of spheroidal fused SiO 2 powder is used.In addition to this, by the same method of above-mentioned inorganic filler a1, the inorganic filler a2 that spheroidal fused SiO 2 powder surface is processed with organo-silane coupling agents is made.
[inorganic filler b1]
Organo-silane coupling agents are substituted with the organo-silane coupling agents (chemical company, SHIN-ETSU HANTOTAI manufactures, KBM803) that following structural (β) is indicated.In addition to this, by the same method of above-mentioned inorganic filler a1, the inorganic filler b1 that spheroidal fused SiO 2 powder surface is processed with organo-silane coupling agents is made.
HS-C3H6Si(OCH3)3 …(β)
[inorganic filler b2]
Organo-silane coupling agents are substituted with the organo-silane coupling agents (chemical company, SHIN-ETSU HANTOTAI manufactures, KBE 903) that following structural (γ) is indicated.In addition to this, by the same method of above-mentioned inorganic filler a1, the inorganic filler b2 that spheroidal fused SiO 2 powder surface is processed with organo-silane coupling agents is made.
[inorganic filler c]
Spheroidal fused SiO 2 powder (13.2 μm of average grain diameter)
[inorganic filler d]
Spheroidal fused SiO 2 powder (16.2 μm of average grain diameter)
[inorganic filler a3]
Organo-silane coupling agents (chemical company, the SHIN-ETSU HANTOTAI manufacture that 1g following structural (α) is indicated, KBE502 it) is diluted with 10g water with 300ml acetone, it is injected into the 100g spheroidal fused SiO 2 powder in 1 liter of beaker (45 μm or 45 μm of partial size or more of 0.17 weight % of sieve residue, average grain diameter 11 μm: FB-7SDC, electrochemically industrial society manufactures), muddy is made.Then, the mud with magnetic stirrer stir about 15 hours.After stirring, mud immigration is covered in the aluminium pallet of aluminium foil, it is dry to evaporate solvent at 105 DEG C on hot plate.After evaporation is dry, it is further heated 30 minutes at 95 DEG C in drier, the above-mentioned spheroidal fused SiO 2 powder surface processed inorganic filler a3 of organo-silane coupling agents is obtained.
[inorganic filler a4]
As spheroidal fused SiO 2 powder, 15 μm of average grain diameter of the spheroidal fused SiO 2 powder (the electrochemically FB-8S of industrial society's manufacture) of 45 μm or 45 μm of partial size or more of 0.3 weight % of sieve residue is used.In addition to this, by above-mentioned method same as inorganic filler a3, the inorganic filler a4 with organo-silane coupling agents processing spheroidal fused SiO 2 powder surface is made.
[inorganic filler b3]
45 μm or 45 μm of partial size or more of 0.17 weight % of sieve residue, 11 μm of average grain diameter of spheroidal fused SiO 2 powder.
[inorganic filler b4]
As spheroidal fused SiO 2 powder, 45 μm or 45 μm of partial size or more of 5.0 weight % of sieve residue, 15 μm of average grain diameter of spheroidal fused SiO 2 powder (MSR-FC408 of Long Sen society manufacture) are used.In addition to this, by above-mentioned method same as inorganic filler a3, the inorganic filler b4 that spheroidal fused SiO 2 powder surface is processed with organo-silane coupling agents is made.
[inorganic filler b5]
As spheroidal fused SiO 2 powder, 45 μm or 45 μm of partial size or more of 0.5 weight % of sieve residue, 20 μm of average grain diameter of spheroidal fused SiO 2 powder are used.In addition to this, by above-mentioned method same as inorganic filler a3, the inorganic filler b5 that spheroidal fused SiO 2 powder surface is processed with organo-silane coupling agents is made.
[inorganic filler b6]
Organo-silane coupling agents (chemistry society, SHIN-ETSU HANTOTAI manufactures, KBM803) that organo-silane coupling agents are indicated with following structural (β) substitute.In addition to this, method same as above-mentioned inorganic filler a3 is pressed, the inorganic filler b6 for processing spheroidal fused SiO 2 powder surface with organo-silane coupling agents is made.
HS-C3H6Si(OCH3)3 …(β)
[Examples 1 to 6, comparative example 1~9]
The each component that the following table 1~table 3 is indicated cooperated according to ratio shown in the table, at double roll mill (100 DEG C of temperature) melting mixing 3 minutes.Then, it is crushed after the fusant is cooling, obtains required epoxy resin composition for encapsulating semiconductor.Also, " part " indicates parts by weight.
[table 1] (part)
|
| |||||||||
| 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | ||
| Epoxy resin | a | - | - | - | - | - | - | - | 33 |
| b | - | - | - | - | - | - | 100 | 64 | |
| c | 100 | 100 | 100 | 100 | 100 | 100 | - | - | |
| Phenolic resin | a | 108 | 108 | 108 | 108 | 108 | 108 | 119 | - |
| b | - | - | - | - | - | - | - | 50 | |
| c | - | - | - | - | - | - | - | 35 | |
|
| 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | |
|
| 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | |
| Inorganic filler | a1 | 80 | 150 | 450 | 750 | 150 | 450 | 150 | 150 |
| a2 | - | - | - | - | - | - | - | - | |
| b1 | - | - | - | - | - | - | - | - | |
| b2 | - | - | - | - | - | - | - | - | |
| c | 1420 | 1350 | 1050 | 750 | - | - | 1350 | 1350 | |
| d | - | - | - | - | 1350 | 1050 | - | - | |
| The content (weight %) of inorganic filler in composition epoxy resin | 87.7 | 87.7 | 87.7 | 87.7 | 87.7 | 87.7 | 87.1 | 89.0 | |
| The content (weight %) of surface-treated inorganic filler in inorganic filler | 5.3 | 10.0 | 30.0 | 50.0 | 10.0 | 30.0 | 10.0 | 10.0 | |
[table 2] (part)
| Embodiment | |||||||||
| 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | ||
| Epoxy resin | a | - | - | - | - | - | - | - | 33 |
| b | - | - | - | - | - | - | 100 | 64 | |
| c | 100 | 100 | 100 | 100 | 100 | 100 | - | - | |
| Phenolic resin | a | 108 | 108 | 108 | 108 | 108 | 108 | 119 | - |
| b | - | - | - | - | - | - | - | 50 | |
| c | - | - | - | - | - | - | - | 35 | |
|
| 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | |
|
| 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | |
| Inorganic filler | a1 | - | - | - | - | - | - | - | - |
| a2 | 80 | 150 | 450 | 750 | 150 | 450 | 150 | 150 | |
| b1 | - | - | - | - | - | - | - | - | |
| b2 | - | - | - | - | - | - | - | - | |
| c | 1420 | 1350 | 1050 | 750 | - | - | 1350 | 1350 | |
| d | - | - | - | - | 1350 | 1050 | - | - | |
| The content (weight %) of inorganic filler in composition epoxy resin | 87.7 | 87.7 | 87.7 | 87.7 | 87.7 | 87.7 | 87.1 | 89.0 | |
| The content (weight %) of surface-treated inorganic filler in inorganic filler | 5.3 | 10.0 | 30.0 | 50.0 | 10.0 | 30.0 | 10.0 | 10.0 | |
[table 3] (part)
| Comparative example | ||||||||||
| 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | ||
| Epoxy resin | a | - | - | - | - | - | - | - | - | 33 |
| b | - | - | - | - | - | - | - | 100 | 64 | |
| c | 100 | 100 | 100 | 100 | 100 | 100 | 100 | - | - | |
| Phenolic resin | a | 108 | 108 | 108 | 108 | 108 | 108 | 108 | 119 | |
| b | - | - | - | - | - | - | - | - | 50 | |
| c | - | - | - | - | - | - | - | - | 35 | |
|
| 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | |
|
| 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | |
| Inorganic filler | a1 | 20 | 100 0 | 120 0 | - | - | 800 | - | 100 0 | 100 0 |
| a2 | - | - | - | - | - | - | 100 0 | - | - | |
| b1 | - | - | - | 150 | - | - | - | - | - | |
| b2 | - | - | - | - | 150 | - | - | - | - | |
| c | 148 0 | 500 | 300 | 135 0 | 135 0 | 700 | 500 | 500 | 500 | |
| d | - | - | - | - | - | - | - | - | - | |
| The content (weight %) of inorganic filler in composition epoxy resin | 87.7 | 87.7 | 87.7 | 87.7 | 87.7 | 87.7 | 87.7 | 87.7 | 87.7 | |
| The content (weight %) of surface-treated inorganic filler in inorganic filler | 1.3 | 66.7 | 80.0 | 10.0 | 10.0 | 53.3 | 66.7 | 66.7 | 66.7 | |
Using the composition epoxy resin that these are obtained by embodiment and comparative example, by following methods, measuring its, resistance to insertion is porosity, deforms, and evaluates pressure cooker gluten substitute (PCT test).Obtained result is shown in the following table 4~table 6 together.
[resistance to insertion is porosity]
As shown in FIG. 1A and 1B, it is manufactured by the way that 9 semiconductor elements 1 (chip size: 10mm × 10mm × thickness 0.5mm) are installed in substrate 2 (size: 50mm × 50mm × thickness 0.3mm).
And, use composition epoxy resin obtained in embodiment and comparative example, by the above-mentioned substrate for being mounted with semiconductor element in die cavity size are as follows: carry out transfer molding (condition: 175 DEG C × 90 seconds) in 50mm × 50mm × depth 0.7mm mold, as shown in Figure 2, sealing resin layer 3 is formed in a manner of comprising the semiconductor element 1 on substrate 2, carries out resin seal.Calculate the number of components of the generation outer gap 4 on semiconductor element 1.Also, since the above-mentioned substrate for having made 29 semiconductor elements 1 of installation on substrate 2 carries out transfer molding, therefore the number of the component manufactured is 18.
[determination of deformation]
The deflection for the semiconductor subassembly that above-mentioned manufacture obtains is determined by the following method.That is, the length of the maximum distortion part of horizontal plane of measurement semiconductor subassembly when horizontal positioned.Measurement is carried out with optical microscopy.
[PCT test]
In the PCT container under conditions of 130 DEG C × 85%RH of semiconductor subassembly obtained above investment, place 196 hours.Using the semiconductor subassembly, with whether there is or not interface peels in ultrasonic wave flaw detection device confirmation semiconductor subassembly, and the number of components that interface peel occurs is calculated.Also, the number of the component of manufacture same as described above is 18.
[table 4]
|
| ||||||||
| 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | |
| Resistance to insertion is porosity (a/18) | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 |
| It deforms (μm) | 70 | 80 | 70 | 90 | 70 | 80 | 80 | 60 |
| PCT test | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 |
[table 5]
| Embodiment | ||||||||
| 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | |
| Resistance to insertion gap | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 |
| Property (a/18) | ||||||||
| It deforms (μm) | 80 | 80 | 70 | 60 | 90 | 70 | 80 | 50 |
| PCT test | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 |
[table 6]
| Comparative example | |||||||||
| 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | |
| Resistance to insertion is porosity (a/18) | 2/18 | 5/18 | 8/18 | 7/18 | 5/18 | 4/18 | 3/18 | 5/18 | 8/18 |
| It deforms (μm) | 80 | 90 | 100 | 80 | 70 | 60 | 70 | 80 | 60 |
| PCT test | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 |
It can be seen that from the above, gap absolutely not occurs on semiconductor element in embodiment sample, and obtains the single facer type semiconductor device of high reliablity.
In contrast, 1 sample of comparative example due to the content of surface-treated subtle spheroidal fused silica it is very few, occur gap on semiconductor element.There is gap since the content of its surface-treated subtle spheroidal fused silica is excessive in the sample of comparative example 2,3 on semiconductor element.In addition, the sample of comparative example 4,5 all employs the subtle spheroidal fused silica being surface-treated by the organo-silane coupling agents without propenyl or methyl propenyl, the effect for the gap generation that is not inhibited.Also, there is gap since the content of surface-treated subtle spheroidal fused silica is excessive in comparative example 6~9 on semiconductor element.
[embodiment 17~32, comparative example 10~23]
The each component that the following table 7~table 10 is indicated cooperates according to ratio shown in the table, melting mixing 3 minutes in double roll mill (100 DEG C of temperature).Then, being crushed after fusant cooling, required epoxy resin composition for encapsulating semiconductor is obtained.Also, " part " indicates parts by weight.
[table 7] (part)
| Embodiment | |||||||||
| 17 | 18 | 19 | 20 | 21 | 22 | 23 | 24 | ||
| Epoxy resin | a | 100 | 100 | 100 | 80 | 70 | 80 | 100 | 100 |
| d | - | - | - | 20 | 30 | - | - | - | |
| c | - | - | - | - | - | 20 | - | - | |
| Phenolic resin | d | 63 | - | - | 62 | - | - | 63 | 63 |
| e | - | 101 | - | - | 97 | - | - | - | |
| f | - | - | 55 | - | - | 63 | - | - | |
|
| 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | |
|
| 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | |
| Inorganic filler | a3 | 800 | 800 | 800 | 800 | 800 | 800 | 1200 | 500 |
| a4 | - | - | - | - | - | - | - | - | |
| b3 | - | - | - | - | - | - | - | - | |
| b4 | - | - | - | - | - | - | - | - | |
| b5 | - | - | - | - | - | - | - | - | |
| b6 | - | - | - | - | - | - | - | - | |
| The content (weight %) of 45 μm or 45 μm of partial size or more of particle in inorganic filler | 0.17 | 0.17 | 0.17 | 0.17 | 0.17 | 0.17 | 0.17 | 0.17 | |
| The average grain diameter (μm) of inorganic filler | 11 | 11 | 11 | 11 | 11 | 11 | 11 | 11 | |
[table 8] (part)
| Embodiment | |||||||||
| 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | ||
| Epoxy resin | a | 100 | 100 | 100 | 80 | 70 | 80 | 100 | 100 |
| d | - | - | - | 20 | 30 | - | - | - | |
| c | - | - | - | - | - | 20 | - | - | |
| Phenolic resin | d | 63 | - | - | 62 | - | - | 63 | 63 |
| e | - | 101 | - | - | 97 | - | - | - | |
| f | - | - | 55 | - | - | 63 | - | - | |
|
| 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | |
|
| 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | |
| Inorganic filler | a3 | - | - | - | - | - | - | - | - |
| a4 | 800 | 800 | 800 | 800 | 800 | 800 | 1200 | 500 | |
| b3 | - | - | - | - | - | - | - | - | |
| b4 | - | - | - | - | - | - | - | - | |
| b5 | - | - | - | - | - | - | - | - | |
| b6 | - | - | - | - | - | - | - | - | |
| The content (weight %) of 45 μm or 45 μm of partial size or more of particle in inorganic filler | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | |
| The average grain diameter (μm) of inorganic filler | 15 | 15 | 15 | 15 | 15 | 15 | 15 | 15 | |
[table 9] (part)
| Comparative example | |||||||||
| 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | ||
| Epoxy resin | a | 100 | 100 | 100 | 100 | 100 | 100 | - | - |
| d | - | - | - | - | - | - | 100 | - | |
| c | - | - | - | - | - | - | - | 100 | |
| Phenolic resin | d | 63 | - | - | 63 | - | - | - | - |
| e | - | 101 | - | - | 101 | - | 55 | 55 | |
| f | - | - | 55 | - | - | 55 | - | - | |
|
| 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | |
|
| 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | |
| Inorganic filler | a3 | - | - | - | - | - | - | 800 | 800 |
| a4 | - | - | - | - | - | - | - | - | |
| b3 | 800 | 800 | 800 | - | - | - | - | - | |
| b4 | - | - | - | 800 | 800 | 800 | - | - | |
| b5 | - | - | - | - | - | - | - | - | |
| b6 | - | - | - | - | - | - | - | - | |
| The content (weight %) of 45 μm or 45 μm of partial size or more of particle in inorganic filler | 0.17 | 0.17 | 0.17 | 3 | 3 | 3 | 0.17 | 0.17 | |
| The average grain diameter (μm) of inorganic filler | 11 | 11 | 11 | 15 | 15 | 15 | 11 | 11 | |
[table 10] (part)
| Comparative example | |||||||
| 18 | 19 | 20 | 21 | 22 | 23 | ||
| Epoxy resin | a | 100 | 100 | 100 | 100 | 100 | 100 |
| d | - | - | - | - | - | - | |
| c | - | - | - | - | - | - | |
| Phenolic resin | d | 63 | - | - | 63 | - | - |
| e | - | 101 | - | - | 101 | - | |
| f | - | - | 55 | - | - | 55 | |
|
| 2 | 2 | 2 | 2 | 2 | 2 | |
|
| 1 | 1 | 1 | 1 | 1 | 1 | |
| Inorganic filler | a3 | - | - | - | - | - | - |
| a4 | - | - | - | - | - | - | |
| b3 | - | - | - | - | - | - | |
| b4 | - | - | - | - | - | - | |
| b5 | 800 | 800 | 800 | - | - | - | |
| b6 | - | - | - | 800 | 800 | 800 | |
| The content (weight %) of 45 μm or 45 μm of partial size or more of particle in inorganic filler | 0.5 | 0.5 | 0.5 | 0.17 | 0.17 | 0.17 | |
| The average grain diameter (μm) of inorganic filler | 20 | 20 | 20 | 11 | 11 | 11 | |
Using the composition epoxy resin that these are obtained by embodiment and comparative example, by following methods, its unfilled generation, deformation is measured, pressure cooker gluten substitute (PCT test) is evaluated.Obtained result is shown in the following table 11~table 14 together.
[generation of fillibility interface peel]
As shown in Figure 3A and Figure 3B, it is manufactured by the way that following 9 semiconductor elements 5 (chip size: 7mm × 7mm × thickness 0.3mm) equipped with 100 SnPb63 salient points 6 are flip-chip mounted in substrate 7 (size: 50mm × 50mm × thickness 0.3mm).
And, the composition epoxy resin obtained using embodiment and comparative example, by the above-mentioned substrate being flip-chip mounted in die cavity size are as follows: carry out transfer molding (condition: 175 DEG C × 90 seconds) in 50mm × 50mm × depth 0.7mm mold, then carry out after-hardening in 175 DEG C × 5 hours.As shown in Figure 4, the gap resin seal between substrate 7 and semiconductor element 5, while sealing resin layer 8 is formed on substrate 7, resin seal is carried out, to include the semiconductor element 5 being flip-chip mounted.Hereafter, as shown in figure 4, by along dotted line ×, each semiconductor element 5 is cut into individual unit, manufactures semiconductor subassembly.The semiconductor subassembly is PBGA (plasticity ball grid array, size: 8 thickness 0.7mm of 16mm × 16mm × sealing resin layer).Calculate the existing number of components for being not filled by part in the gap for having determined that semiconductor element 5 and substrate 7.Also, with ultrasonic wave crack detecting device cutting assembly, its section is observed to determine and above-mentioned be not filled by part.Also, it is mounted with that the substrate of 9 semiconductor elements 5 (referring to Fig. 3 A, 3B) carries out transfer molding on substrate 7 due to having made 2, therefore the number of components manufactured is 18.
[determination of deformation]
The deflection of semiconductor subassembly obtained above determines as follows.That is, the length of the maximum distortion part of horizontal plane of measurement semiconductor subassembly when horizontal positioned.With optics measurement microscope.Also, general, deflection is that 50 μm or 5 μm or less of situation is excellent.
[PCT test]
Semiconductor subassembly obtained above is put into PCT container under conditions of 130 DEG C × 85%RH, is placed 196 hours.Using the semiconductor subassembly, with whether there is or not interface peels in ultrasonic wave flaw detection device confirmation semiconductor subassembly, and the number of components that interface peel occurs is calculated.Also, the number of components of manufacture same as above is 18.
[table 11]
| Embodiment | ||||||||
| 17 | 18 | 19 | 20 | 21 | 22 | 23 | 24 | |
| The fillibility (a/18) of semiconductor element and substrate | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 |
| The interface peel (a/18) of semiconductor element and sealing resin in PCT test | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 |
| Deflection (μm) | 20 | 30 | 10 | 30 | 40 | 20 | 0 | 50 |
[table 12]
| Embodiment | ||||||||
| 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | |
| The fillibility (a/18) of semiconductor element and substrate | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 |
| The interface peel (a/18) of semiconductor element and sealing resin in PCT test | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 |
| Deflection (μm) | 20 | 35 | 15 | 25 | 35 | 15 | -5 | 50 |
[table 13]
| Comparative example | ||||||||
| 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | |
|
The fillibility (a/18) of semiconductor element and | 1/18 | 2/18 | 2/18 | 15/18 | 14/18 | 17/18 | 0/18 | 0/18 |
| The interface peel (a/18) of semiconductor element and sealing resin in PCT test | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 0/18 | 4/18 | 6/18 |
| Deflection (μm) | 20 | 35 | 15 | 25 | 30 | 20 | 60 | 90 |
[table 14]
| Comparative example | ||||||
| 18 | 19 | 20 | 21 | 22 | 23 | |
| The fillibility (a/18) of semiconductor element and substrate | 3/18 | 2/18 | 3/18 | 3/18 | 3/18 | 2/18 |
| The interface peel (a/18) of semiconductor element and sealing resin in PCT test | 0/18 | 0/l8 | 0/18 | 0/18 | 0/18 | 0/18 |
| Deflection (μm) | 20 | 30 | 40 | 25 | 25 | 35 |
It can be seen that from the above, the fillibility in the gap of the semiconductor element and substrate of embodiment sample is good, interface peel, all deformed amount do not occur at 50 μm or 50 μm or less.Also, it is shown in PCT test good as a result, the available good semiconductor device of moisture-proof reliability.
In contrast, for 10~12 sample of comparative example due to having used without surface-treated subtle spheroidal fused silica, determination is not filled by part.The sample of comparative example 13~15, due to having used 45 μm or 45 μm of partial size or more of sieve residue to be greater than the surface-treated subtle spheroidal fused silica of 3.0 weight %, determination, which has, is largely not filled by part.In addition, the sample of comparative example 16,17, since not using specific epoxy resin, although fillibility is excellent, but determines that there are the interface peels between semiconductor element and sealing resin layer, and deflection is very big.In addition, comparative example 18~20, since the big confirmation of partial size occurs being not filled by part；In addition, comparative example 21~23, due to using surface treating agent of the invention, not occurring being not filled by part.
Although the present invention has carried out in detail and specific description referring to embodiment, those skilled in the art's various changes without departing from the spirit and scope of the present invention and amendment are all feasible.
The application is based on Japanese patent application (Patent 2004-143862) filed in Japanese patent application (Patent 2004-143861) filed on May 13rd, 2004 and on May 13rd, 2004, therefore its content can be incorporated in this as reference.
Claims (5)
1. epoxy resin composition for encapsulating semiconductor of the one kind containing following (A) component, (B) component, (C) component, (D) component:
(A) epoxy resin；
(B) phenolic resin；
(C) curing accelerator；
(D) the spherical inorganic filler of surface treatment was carried out with the organo-silane coupling agents containing acrylic or methylpropenyl.
2. epoxy resin composition for encapsulating semiconductor according to claim 1, in the spherical inorganic filler of (D) component, the spherical inorganic filler that average grain diameter is 0.5~3 μm accounts for 5~50 weight % in whole inorganic fillers.
3. epoxy resin composition for encapsulating semiconductor according to claim 1, wherein, (D) 45 μm or 45 μm of the partial size of the spherical inorganic filler of component or more of content is 0.3 weight % or 0.3 weight % hereinafter, and average grain diameter is 15 μm or 15 μm or less.
4. epoxy resin composition for encapsulating semiconductor according to claim 1, wherein the epoxy resin of (A) component is the epoxy resin indicated by general formula (1).
(n is 0 or positive number in formula (1))
5. a kind of semiconductor device, wherein including semiconductor encapsulating epoxy resin and semiconductor element that claim 1 is recorded, which carries out resin seal with the composition epoxy resin.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004143861A JP4421939B2 (en) | 2004-05-13 | 2004-05-13 | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same |
| JP143862/04 | 2004-05-13 | ||
| JP143861/04 | 2004-05-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1696169A true CN1696169A (en) | 2005-11-16 |
| CN100391995C CN100391995C (en) | 2008-06-04 |
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|---|---|---|---|
| CNB2005100783426A Expired - Fee Related CN100391995C (en) | 2004-05-13 | 2005-05-13 | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same |
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|---|---|
| JP (1) | JP4421939B2 (en) |
| CN (1) | CN100391995C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107400334A (en) * | 2016-04-26 | 2017-11-28 | 住友电木株式会社 | The manufacture method of epoxy resin composition for encapsulating semiconductor and semiconductor device |
| CN109971127A (en) * | 2019-03-29 | 2019-07-05 | 武汉市三选科技有限公司 | Being fanned out to shape wafer-level packaging liquid encapsulating material reduces the method for viscosity and the liquid encapsulating material of acquisition |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4386453B2 (en) | 2006-05-31 | 2009-12-16 | 信越化学工業株式会社 | Resin-sealed semiconductor device |
| JP5598343B2 (en) * | 2011-01-17 | 2014-10-01 | 信越化学工業株式会社 | Liquid epoxy resin composition for semiconductor encapsulation and semiconductor device |
| KR102376144B1 (en) * | 2018-11-14 | 2022-03-18 | 주식회사 엘지화학 | Resin composition for bonding semiconductor, adhesive film for semiconductor, dicing diebonding film, and method for dicing of semiconductor wafer using the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08311310A (en) * | 1995-05-18 | 1996-11-26 | Matsushita Electric Works Ltd | Epoxy resin composition for sealing and semiconductor device using the same |
| CN1262598C (en) * | 1999-02-25 | 2006-07-05 | 日东电工株式会社 | Resin composition for semiconductor encapsulation, semiconductor device obtained with the same, and process for producing semiconductor device |
| CN1288914A (en) * | 2000-08-30 | 2001-03-28 | 中国科学院化学研究所 | Epoxy resin composite containing compound inorganic stuffing |
| JP2003253095A (en) * | 2002-03-05 | 2003-09-10 | Nitto Denko Corp | Resin composition for sealing semiconductor and semiconductor device using the same |
-
2004
- 2004-05-13 JP JP2004143861A patent/JP4421939B2/en active Active
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107400334A (en) * | 2016-04-26 | 2017-11-28 | 住友电木株式会社 | The manufacture method of epoxy resin composition for encapsulating semiconductor and semiconductor device |
| CN109971127A (en) * | 2019-03-29 | 2019-07-05 | 武汉市三选科技有限公司 | Being fanned out to shape wafer-level packaging liquid encapsulating material reduces the method for viscosity and the liquid encapsulating material of acquisition |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100391995C (en) | 2008-06-04 |
| JP2005325209A (en) | 2005-11-24 |
| JP4421939B2 (en) | 2010-02-24 |
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