CN100378948C - 用于形成半导体装置和其上结构的方法 - Google Patents

用于形成半导体装置和其上结构的方法 Download PDF

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Publication number
CN100378948C
CN100378948C CNB038256878A CN03825687A CN100378948C CN 100378948 C CN100378948 C CN 100378948C CN B038256878 A CNB038256878 A CN B038256878A CN 03825687 A CN03825687 A CN 03825687A CN 100378948 C CN100378948 C CN 100378948C
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China
Prior art keywords
dummy
dielectric layer
conductive
region
forming
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Expired - Lifetime
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CNB038256878A
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English (en)
Chinese (zh)
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CN1820365A (zh
Inventor
辛迪·K·高尔德伯格
斯坦雷·M·菲利皮亚克
约翰·C·弗雷克
李勇杰
布莱德雷·P·史密斯
尤瑞·E·索罗门特塞弗
泰瑞·G·斯巴克斯
克尔克·J·斯特罗塞伍斯基
凯瑟琳·C·于
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN1820365A publication Critical patent/CN1820365A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/034—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics bottomless barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/044—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB038256878A 2002-12-20 2003-09-23 用于形成半导体装置和其上结构的方法 Expired - Lifetime CN100378948C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/327,403 2002-12-20
US10/327,403 US6838354B2 (en) 2002-12-20 2002-12-20 Method for forming a passivation layer for air gap formation

Publications (2)

Publication Number Publication Date
CN1820365A CN1820365A (zh) 2006-08-16
CN100378948C true CN100378948C (zh) 2008-04-02

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Family Applications (1)

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CNB038256878A Expired - Lifetime CN100378948C (zh) 2002-12-20 2003-09-23 用于形成半导体装置和其上结构的方法

Country Status (8)

Country Link
US (1) US6838354B2 (https=)
EP (1) EP1579497A3 (https=)
JP (2) JP4799868B2 (https=)
KR (1) KR20050085833A (https=)
CN (1) CN100378948C (https=)
AU (1) AU2003279030A1 (https=)
TW (1) TWI367543B (https=)
WO (1) WO2004061948A2 (https=)

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CN105308736A (zh) * 2014-04-18 2016-02-03 索尼公司 场效应晶体管、场效应晶体管制造方法和射频器件
CN108028224A (zh) * 2015-10-16 2018-05-11 索尼公司 半导体装置以及半导体装置的制造方法

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US10553532B2 (en) 2014-12-24 2020-02-04 Intel Corporation Structure and method to self align via to top and bottom of tight pitch metal interconnect layers
US9768058B2 (en) 2015-08-10 2017-09-19 Globalfoundries Inc. Methods of forming air gaps in metallization layers on integrated circuit products
US9922940B2 (en) * 2016-02-22 2018-03-20 Toshiba Memory Corporation Semiconductor device including air gaps between interconnects and method of manufacturing the same
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CN105308736A (zh) * 2014-04-18 2016-02-03 索尼公司 场效应晶体管、场效应晶体管制造方法和射频器件
US10535607B2 (en) 2014-04-18 2020-01-14 Sony Corporation Field-effect transistor, method of manufacturing the same, and radio-frequency device
US10847466B2 (en) 2014-04-18 2020-11-24 Sony Corporation Field-effect transistor, method of manufacturing the same, and radio-frequency device
CN105308736B (zh) * 2014-04-18 2021-10-19 索尼公司 场效应晶体管、场效应晶体管制造方法和射频器件
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CN108028224A (zh) * 2015-10-16 2018-05-11 索尼公司 半导体装置以及半导体装置的制造方法
CN108028224B (zh) * 2015-10-16 2022-08-16 索尼公司 半导体装置以及半导体装置的制造方法

Also Published As

Publication number Publication date
EP1579497A2 (en) 2005-09-28
US6838354B2 (en) 2005-01-04
JP2006511955A (ja) 2006-04-06
EP1579497A3 (en) 2005-12-07
AU2003279030A1 (en) 2004-07-29
KR20050085833A (ko) 2005-08-29
US20040119134A1 (en) 2004-06-24
CN1820365A (zh) 2006-08-16
JP2006324689A (ja) 2006-11-30
TWI367543B (en) 2012-07-01
JP4799868B2 (ja) 2011-10-26
TW200414414A (en) 2004-08-01
WO2004061948A3 (en) 2005-10-13
WO2004061948A2 (en) 2004-07-22
JP4794389B2 (ja) 2011-10-19

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