TWI367543B - Method for forming a passivation layer for air gap formation and structure thereof - Google Patents

Method for forming a passivation layer for air gap formation and structure thereof

Info

Publication number
TWI367543B
TWI367543B TW092128711A TW92128711A TWI367543B TW I367543 B TWI367543 B TW I367543B TW 092128711 A TW092128711 A TW 092128711A TW 92128711 A TW92128711 A TW 92128711A TW I367543 B TWI367543 B TW I367543B
Authority
TW
Taiwan
Prior art keywords
forming
passivation layer
air gap
gap formation
formation
Prior art date
Application number
TW092128711A
Other languages
English (en)
Chinese (zh)
Other versions
TW200414414A (en
Inventor
K Goldberg Cindy
Michael Filipiak Stanley
C Flake John
T Lii Yeong-Jyh
P Smith Bradley
E Solomentsev Yuri
G Sparks Terry
J Strozewski Kirk
C Yu Kathleen
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200414414A publication Critical patent/TW200414414A/zh
Application granted granted Critical
Publication of TWI367543B publication Critical patent/TWI367543B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/034—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics bottomless barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/044—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
TW092128711A 2002-12-20 2003-10-16 Method for forming a passivation layer for air gap formation and structure thereof TWI367543B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/327,403 US6838354B2 (en) 2002-12-20 2002-12-20 Method for forming a passivation layer for air gap formation

Publications (2)

Publication Number Publication Date
TW200414414A TW200414414A (en) 2004-08-01
TWI367543B true TWI367543B (en) 2012-07-01

Family

ID=32594241

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092128711A TWI367543B (en) 2002-12-20 2003-10-16 Method for forming a passivation layer for air gap formation and structure thereof

Country Status (8)

Country Link
US (1) US6838354B2 (https=)
EP (1) EP1579497A3 (https=)
JP (2) JP4799868B2 (https=)
KR (1) KR20050085833A (https=)
CN (1) CN100378948C (https=)
AU (1) AU2003279030A1 (https=)
TW (1) TWI367543B (https=)
WO (1) WO2004061948A2 (https=)

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US8108820B2 (en) * 2008-09-11 2012-01-31 International Business Machines Corporation Enhanced conductivity in an airgapped integrated circuit
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US9209073B2 (en) 2013-03-12 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Metal cap apparatus and method
KR102154112B1 (ko) * 2013-08-01 2020-09-09 삼성전자주식회사 금속 배선들을 포함하는 반도체 장치 및 그 제조 방법
JP6295802B2 (ja) * 2014-04-18 2018-03-20 ソニー株式会社 高周波デバイス用電界効果トランジスタおよびその製造方法、ならびに高周波デバイス
US9831214B2 (en) * 2014-06-18 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device packages, packaging methods, and packaged semiconductor devices
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Also Published As

Publication number Publication date
EP1579497A2 (en) 2005-09-28
US6838354B2 (en) 2005-01-04
JP2006511955A (ja) 2006-04-06
EP1579497A3 (en) 2005-12-07
AU2003279030A1 (en) 2004-07-29
KR20050085833A (ko) 2005-08-29
US20040119134A1 (en) 2004-06-24
CN1820365A (zh) 2006-08-16
JP2006324689A (ja) 2006-11-30
JP4799868B2 (ja) 2011-10-26
CN100378948C (zh) 2008-04-02
TW200414414A (en) 2004-08-01
WO2004061948A3 (en) 2005-10-13
WO2004061948A2 (en) 2004-07-22
JP4794389B2 (ja) 2011-10-19

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