CN100375280C - 导电材料及其制造方法 - Google Patents

导电材料及其制造方法 Download PDF

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Publication number
CN100375280C
CN100375280C CNB2005100820374A CN200510082037A CN100375280C CN 100375280 C CN100375280 C CN 100375280C CN B2005100820374 A CNB2005100820374 A CN B2005100820374A CN 200510082037 A CN200510082037 A CN 200510082037A CN 100375280 C CN100375280 C CN 100375280C
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CN
China
Prior art keywords
copper
conductive
layer
region
metals
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Expired - Lifetime
Application number
CNB2005100820374A
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English (en)
Chinese (zh)
Other versions
CN1719606A (zh
Inventor
迈克尔·莱恩
斯特法尼·R·奇拉斯
特里·A·斯普纳尔
罗伯特·罗森伯格
丹尼尔·C·埃德尔斯坦
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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Publication of CN1719606A publication Critical patent/CN1719606A/zh
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/044—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/055—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H10W20/4424—Copper alloys

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB2005100820374A 2004-07-09 2005-07-05 导电材料及其制造方法 Expired - Lifetime CN100375280C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/887,087 2004-07-09
US10/887,087 US7119018B2 (en) 2004-07-09 2004-07-09 Copper conductor

Publications (2)

Publication Number Publication Date
CN1719606A CN1719606A (zh) 2006-01-11
CN100375280C true CN100375280C (zh) 2008-03-12

Family

ID=35540173

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100820374A Expired - Lifetime CN100375280C (zh) 2004-07-09 2005-07-05 导电材料及其制造方法

Country Status (4)

Country Link
US (2) US7119018B2 (https=)
JP (1) JP4965091B2 (https=)
CN (1) CN100375280C (https=)
TW (1) TWI373095B (https=)

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US6653236B2 (en) * 2002-03-29 2003-11-25 Micron Technology, Inc. Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions
US7341947B2 (en) * 2002-03-29 2008-03-11 Micron Technology, Inc. Methods of forming metal-containing films over surfaces of semiconductor substrates
US20060163731A1 (en) * 2005-01-21 2006-07-27 Keishi Inoue Dual damascene interconnections employing a copper alloy at the copper/barrier interface
US7666787B2 (en) * 2006-02-21 2010-02-23 International Business Machines Corporation Grain growth promotion layer for semiconductor interconnect structures
US7528066B2 (en) * 2006-03-01 2009-05-05 International Business Machines Corporation Structure and method for metal integration
US20070269586A1 (en) * 2006-05-17 2007-11-22 3M Innovative Properties Company Method of making light emitting device with silicon-containing composition
US7566653B2 (en) * 2007-07-31 2009-07-28 International Business Machines Corporation Interconnect structure with grain growth promotion layer and method for forming the same
US8168532B2 (en) 2007-11-14 2012-05-01 Fujitsu Limited Method of manufacturing a multilayer interconnection structure in a semiconductor device
KR100924865B1 (ko) * 2007-12-27 2009-11-02 주식회사 동부하이텍 반도체 소자의 금속배선 형성방법
US7651943B2 (en) * 2008-02-18 2010-01-26 Taiwan Semicondcutor Manufacturing Company, Ltd. Forming diffusion barriers by annealing copper alloy layers
CN102203935A (zh) * 2008-10-27 2011-09-28 Nxp股份有限公司 生物兼容电极
JP2011009439A (ja) * 2009-06-25 2011-01-13 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
US8336204B2 (en) * 2009-07-27 2012-12-25 International Business Machines Corporation Formation of alloy liner by reaction of diffusion barrier and seed layer for interconnect application
US8409960B2 (en) * 2011-04-08 2013-04-02 Micron Technology, Inc. Methods of patterning platinum-containing material
US9418937B2 (en) 2011-12-09 2016-08-16 Infineon Technologies Ag Integrated circuit and method of forming an integrated circuit
US8736055B2 (en) 2012-03-01 2014-05-27 Lam Research Corporation Methods and layers for metallization
CN102891104B (zh) * 2012-09-17 2015-07-29 上海华力微电子有限公司 一种提高Cu CMP效率的方法
US8673779B1 (en) * 2013-02-27 2014-03-18 Lam Research Corporation Interconnect with self-formed barrier
WO2021080726A1 (en) * 2019-10-21 2021-04-29 Applied Materials, Inc. Method of depositing layers
CN113363152A (zh) * 2020-03-06 2021-09-07 长鑫存储技术有限公司 半导体结构及其制作方法
TWI796607B (zh) * 2020-10-22 2023-03-21 龍華科技大學 銅銠鍍層的製備方法

Citations (3)

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JP2000208511A (ja) * 1999-01-13 2000-07-28 Hitachi Ltd 半導体装置
US6161012A (en) * 1996-03-29 2000-12-12 British Telecommunications Public Limited Company Short code dialling
US20020132173A1 (en) * 2001-03-15 2002-09-19 Rolfson J. Brett Multi-layer, attenuated phase-shifting mask

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JP3409831B2 (ja) * 1997-02-14 2003-05-26 日本電信電話株式会社 半導体装置の配線構造の製造方法
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Patent Citations (3)

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US6161012A (en) * 1996-03-29 2000-12-12 British Telecommunications Public Limited Company Short code dialling
JP2000208511A (ja) * 1999-01-13 2000-07-28 Hitachi Ltd 半導体装置
US20020132173A1 (en) * 2001-03-15 2002-09-19 Rolfson J. Brett Multi-layer, attenuated phase-shifting mask

Also Published As

Publication number Publication date
US7495338B2 (en) 2009-02-24
TWI373095B (en) 2012-09-21
JP4965091B2 (ja) 2012-07-04
TW200625526A (en) 2006-07-16
JP2006024943A (ja) 2006-01-26
US20060157857A1 (en) 2006-07-20
CN1719606A (zh) 2006-01-11
US7119018B2 (en) 2006-10-10
US20060006070A1 (en) 2006-01-12

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Effective date of registration: 20171116

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171116

Address after: American New York

Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20080312