CN100373594C - 制造soi有源结构的方法和包括该结构的电路 - Google Patents

制造soi有源结构的方法和包括该结构的电路 Download PDF

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Publication number
CN100373594C
CN100373594C CNB2004800169688A CN200480016968A CN100373594C CN 100373594 C CN100373594 C CN 100373594C CN B2004800169688 A CNB2004800169688 A CN B2004800169688A CN 200480016968 A CN200480016968 A CN 200480016968A CN 100373594 C CN100373594 C CN 100373594C
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CN
China
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region
silicon
layer
trench
source
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Expired - Fee Related
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CNB2004800169688A
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English (en)
Chinese (zh)
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CN1809920A (zh
Inventor
W·-T·康
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Infineon Technologies AG
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Infineon Technologies AG
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Publication of CN1809920A publication Critical patent/CN1809920A/zh
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Publication of CN100373594C publication Critical patent/CN100373594C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0278—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline channels on wafers after forming insulating device isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
CNB2004800169688A 2003-06-16 2004-06-16 制造soi有源结构的方法和包括该结构的电路 Expired - Fee Related CN100373594C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/463,023 US6930357B2 (en) 2003-06-16 2003-06-16 Active SOI structure with a body contact through an insulator
US10/463,023 2003-06-16

Publications (2)

Publication Number Publication Date
CN1809920A CN1809920A (zh) 2006-07-26
CN100373594C true CN100373594C (zh) 2008-03-05

Family

ID=33511523

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800169688A Expired - Fee Related CN100373594C (zh) 2003-06-16 2004-06-16 制造soi有源结构的方法和包括该结构的电路

Country Status (5)

Country Link
US (1) US6930357B2 (enExample)
EP (1) EP1634327A1 (enExample)
JP (1) JP2006527914A (enExample)
CN (1) CN100373594C (enExample)
WO (1) WO2004112127A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116623A (ja) * 2003-10-03 2005-04-28 Nec Electronics Corp 半導体装置およびその製造方法
US7186622B2 (en) * 2004-07-15 2007-03-06 Infineon Technologies Ag Formation of active area using semiconductor growth process without STI integration
JP4664631B2 (ja) * 2004-08-05 2011-04-06 株式会社東芝 半導体装置及びその製造方法
US7091071B2 (en) * 2005-01-03 2006-08-15 Freescale Semiconductor, Inc. Semiconductor fabrication process including recessed source/drain regions in an SOI wafer
US7298009B2 (en) * 2005-02-01 2007-11-20 Infineon Technologies Ag Semiconductor method and device with mixed orientation substrate
US8530355B2 (en) * 2005-12-23 2013-09-10 Infineon Technologies Ag Mixed orientation semiconductor device and method
KR100703033B1 (ko) * 2006-03-22 2007-04-09 삼성전자주식회사 반도체 장치 및 그 제조 방법
US7989893B2 (en) * 2008-08-28 2011-08-02 International Business Machines Corporation SOI body contact using E-DRAM technology
CN101694846B (zh) * 2009-10-14 2011-08-31 上海宏力半导体制造有限公司 一种soi级联双管mos晶体管结构
US9214932B2 (en) 2013-02-11 2015-12-15 Triquint Semiconductor, Inc. Body-biased switching device
US9203396B1 (en) 2013-02-22 2015-12-01 Triquint Semiconductor, Inc. Radio frequency switch device with source-follower
US9379698B2 (en) 2014-02-04 2016-06-28 Triquint Semiconductor, Inc. Field effect transistor switching circuit
US10079248B2 (en) * 2016-11-18 2018-09-18 Globalfoundries Inc. Field-effect transistors with a buried body contact

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4969022A (en) * 1987-03-20 1990-11-06 Nec Corporation Dynamic random access memory device having a plurality of improved one-transistor type memory cells
CN1245349A (zh) * 1998-08-14 2000-02-23 三星电子株式会社 制造高密度半导体存储器件的方法
US6407427B1 (en) * 1999-11-05 2002-06-18 Hyundai Electronics Industries Co., Ltd. SOI wafer device and a method of fabricating the same
US6429099B1 (en) * 2000-01-05 2002-08-06 International Business Machines Corporation Implementing contacts for bodies of semiconductor-on-insulator transistors
US6469350B1 (en) * 2001-10-26 2002-10-22 International Business Machines Corporation Active well schemes for SOI technology

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4763183A (en) * 1984-08-01 1988-08-09 American Telephone And Telegraph Co., At&T Bell Laboratories Semiconductor-on-insulator (SOI) devices and SOI IC fabrication method
GB2179787B (en) * 1985-08-26 1989-09-20 Intel Corp Buried interconnect for mos structure
JPS63237560A (ja) * 1987-03-26 1988-10-04 Nec Corp 絶縁ゲ−ト電界効果トランジスタおよびその製造方法
US5593912A (en) * 1994-10-06 1997-01-14 International Business Machines Corporation SOI trench DRAM cell for 256 MB DRAM and beyond
US5606188A (en) * 1995-04-26 1997-02-25 International Business Machines Corporation Fabrication process and structure for a contacted-body silicon-on-insulator dynamic random access memory
JPH09283766A (ja) 1996-04-18 1997-10-31 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH11307771A (ja) * 1998-04-23 1999-11-05 Toshiba Corp 半導体装置及びその製造方法
US6245663B1 (en) * 1998-09-30 2001-06-12 Conexant Systems, Inc. IC interconnect structures and methods for making same
WO2001043198A2 (en) 1999-12-13 2001-06-14 Infineon Technologies North America Corp. Source/drain-on-insulator (s/doi) field effect transistor using silicon nitride and silicon oxide and method of fabrication
US6174754B1 (en) * 2000-03-17 2001-01-16 Taiwan Semiconductor Manufacturing Company Methods for formation of silicon-on-insulator (SOI) and source/drain-on-insulator(SDOI) transistors
KR100356577B1 (ko) * 2000-03-30 2002-10-18 삼성전자 주식회사 에스오아이 기판과 그 제조방법 및 이를 이용한에스오아이 엠오에스에프이티
US6284594B1 (en) * 2000-05-30 2001-09-04 Chartered Semiconductor Manufacturing Ltd. Formation of an interpoly capacitor structure using a chemical mechanical polishing procedure
JP2002190599A (ja) * 2000-12-20 2002-07-05 Toshiba Corp 半導体装置及びその製造方法
US7067235B2 (en) * 2002-01-15 2006-06-27 Ming Huan Tsai Bi-layer photoresist dry development and reactive ion etch method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4969022A (en) * 1987-03-20 1990-11-06 Nec Corporation Dynamic random access memory device having a plurality of improved one-transistor type memory cells
CN1245349A (zh) * 1998-08-14 2000-02-23 三星电子株式会社 制造高密度半导体存储器件的方法
US6407427B1 (en) * 1999-11-05 2002-06-18 Hyundai Electronics Industries Co., Ltd. SOI wafer device and a method of fabricating the same
US6429099B1 (en) * 2000-01-05 2002-08-06 International Business Machines Corporation Implementing contacts for bodies of semiconductor-on-insulator transistors
US6469350B1 (en) * 2001-10-26 2002-10-22 International Business Machines Corporation Active well schemes for SOI technology

Also Published As

Publication number Publication date
CN1809920A (zh) 2006-07-26
US20040253773A1 (en) 2004-12-16
EP1634327A1 (en) 2006-03-15
WO2004112127A1 (en) 2004-12-23
US6930357B2 (en) 2005-08-16
JP2006527914A (ja) 2006-12-07

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Address after: Munich, Germany

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Effective date of registration: 20120920

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Address after: German Berg, Laura Ibiza

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Granted publication date: 20080305

Termination date: 20160616