GB2179787B - Buried interconnect for mos structure - Google Patents
Buried interconnect for mos structureInfo
- Publication number
- GB2179787B GB2179787B GB8605289A GB8605289A GB2179787B GB 2179787 B GB2179787 B GB 2179787B GB 8605289 A GB8605289 A GB 8605289A GB 8605289 A GB8605289 A GB 8605289A GB 2179787 B GB2179787 B GB 2179787B
- Authority
- GB
- United Kingdom
- Prior art keywords
- mos structure
- buried interconnect
- buried
- interconnect
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02683—Continuous wave laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76901985A | 1985-08-26 | 1985-08-26 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8605289D0 GB8605289D0 (en) | 1986-04-09 |
GB2179787A GB2179787A (en) | 1987-03-11 |
GB2179787B true GB2179787B (en) | 1989-09-20 |
Family
ID=25084176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8605289A Expired GB2179787B (en) | 1985-08-26 | 1986-03-04 | Buried interconnect for mos structure |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS6247151A (en) |
KR (1) | KR870002666A (en) |
CN (1) | CN1008578B (en) |
FR (1) | FR2586509A1 (en) |
GB (1) | GB2179787B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04152518A (en) * | 1990-10-16 | 1992-05-26 | Toshiba Corp | Manufacture of semiconductor device |
JPH08276719A (en) * | 1995-04-07 | 1996-10-22 | Matsushita Electric Ind Co Ltd | Sun light sensor of air conditioner for vehicle |
US6696746B1 (en) | 1998-04-29 | 2004-02-24 | Micron Technology, Inc. | Buried conductors |
US6025261A (en) | 1998-04-29 | 2000-02-15 | Micron Technology, Inc. | Method for making high-Q inductive elements |
US6930357B2 (en) * | 2003-06-16 | 2005-08-16 | Infineon Technologies Ag | Active SOI structure with a body contact through an insulator |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4013489A (en) * | 1976-02-10 | 1977-03-22 | Intel Corporation | Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit |
GB1567197A (en) * | 1976-10-25 | 1980-05-14 | Philips Electronic Associated | Methods of manufacturing semiconductor devices |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4353085A (en) * | 1978-02-27 | 1982-10-05 | Fujitsu Limited | Integrated semiconductor device having insulated gate field effect transistors with a buried insulating film |
DE2967388D1 (en) * | 1978-09-20 | 1985-03-28 | Fujitsu Ltd | Semiconductor memory device and process for fabricating the device |
US4323417A (en) * | 1980-05-06 | 1982-04-06 | Texas Instruments Incorporated | Method of producing monocrystal on insulator |
JPS5734365A (en) * | 1980-08-08 | 1982-02-24 | Ibm | Symmetrical bipolar transistor |
CA1237828A (en) * | 1984-08-01 | 1988-06-07 | Simon M. Sze | Semiconductor-on-insulator (soi) device having electrical short to avoid charge accumulation |
-
1986
- 1986-03-04 GB GB8605289A patent/GB2179787B/en not_active Expired
- 1986-03-26 FR FR8604377A patent/FR2586509A1/en active Pending
- 1986-04-01 CN CN86102300A patent/CN1008578B/en not_active Expired
- 1986-04-11 KR KR1019860002768A patent/KR870002666A/en not_active Application Discontinuation
- 1986-07-17 JP JP61166858A patent/JPS6247151A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4013489A (en) * | 1976-02-10 | 1977-03-22 | Intel Corporation | Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit |
GB1567197A (en) * | 1976-10-25 | 1980-05-14 | Philips Electronic Associated | Methods of manufacturing semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
KR870002666A (en) | 1987-04-06 |
CN1008578B (en) | 1990-06-27 |
CN86102300A (en) | 1987-02-25 |
JPS6247151A (en) | 1987-02-28 |
GB8605289D0 (en) | 1986-04-09 |
GB2179787A (en) | 1987-03-11 |
FR2586509A1 (en) | 1987-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB8612409D0 (en) | Isolation structure in mos devices | |
EP0223526A3 (en) | Optimized integrated circuits | |
GB8600362D0 (en) | Drain fitting | |
GB8603055D0 (en) | Bearings | |
EP0190070A3 (en) | Semiconductor structure | |
EP0190581A3 (en) | Vertically isolated complementary transistor structures | |
GB8603594D0 (en) | Corrosion-preventing structure | |
GB2180688B (en) | Transistors | |
GB8511256D0 (en) | Integrated circuits | |
GB2179787B (en) | Buried interconnect for mos structure | |
GB8504726D0 (en) | Integrated circuits | |
GB8507601D0 (en) | Integrated circuits | |
GB8600221D0 (en) | Drain fitting | |
GB8614591D0 (en) | Two level structure | |
GB8507600D0 (en) | Integrated circuits | |
GB8619843D0 (en) | Semiconductor | |
GB2184269B (en) | Integrated circuits | |
GB8615151D0 (en) | Minizing parasitic junction | |
GB8529329D0 (en) | Balls | |
GB8501694D0 (en) | Floor drain | |
GB8630826D0 (en) | Plummets | |
GB8527310D0 (en) | Semiconductor structure | |
GB8622249D0 (en) | Integrated circuits | |
GB8625113D0 (en) | Pipe arrangements | |
CS188585A1 (en) | Drazkovy rotacni rozvadec prize |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19940304 |