CN100362068C - 不含磨料的化学机械抛光组合物及相关方法 - Google Patents

不含磨料的化学机械抛光组合物及相关方法 Download PDF

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Publication number
CN100362068C
CN100362068C CNB2005101287071A CN200510128707A CN100362068C CN 100362068 C CN100362068 C CN 100362068C CN B2005101287071 A CNB2005101287071 A CN B2005101287071A CN 200510128707 A CN200510128707 A CN 200510128707A CN 100362068 C CN100362068 C CN 100362068C
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China
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weight
amphiphilic polymer
composition
water
grams
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Expired - Lifetime
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CNB2005101287071A
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English (en)
Chinese (zh)
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CN1782006A (zh
Inventor
T·高希
R·D·所罗门
王红雨
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DuPont Electronic Materials Holding Inc
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ROHM AND HAAS ELECTRONIC MATER
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB2005101287071A 2004-11-24 2005-11-24 不含磨料的化学机械抛光组合物及相关方法 Expired - Lifetime CN100362068C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/996,689 2004-11-24
US10/996,689 US7435356B2 (en) 2004-11-24 2004-11-24 Abrasive-free chemical mechanical polishing compositions and methods relating thereto

Publications (2)

Publication Number Publication Date
CN1782006A CN1782006A (zh) 2006-06-07
CN100362068C true CN100362068C (zh) 2008-01-16

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Family Applications (1)

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CNB2005101287071A Expired - Lifetime CN100362068C (zh) 2004-11-24 2005-11-24 不含磨料的化学机械抛光组合物及相关方法

Country Status (6)

Country Link
US (1) US7435356B2 (https=)
JP (1) JP5091400B2 (https=)
KR (1) KR101101169B1 (https=)
CN (1) CN100362068C (https=)
SG (1) SG122919A1 (https=)
TW (1) TWI359860B (https=)

Cited By (2)

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CN103210058A (zh) * 2010-12-15 2013-07-17 第一毛织株式会社 蚀刻膏，其生产方法以及使用其形成图案的方法
CN104603227A (zh) * 2012-08-31 2015-05-06 福吉米株式会社 研磨用组合物和基板的制造方法

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CN1803964B (zh) * 1998-12-28 2010-12-15 日立化成工业株式会社 金属研磨液材料、金属研磨液、其制造方法及使用它的研磨方法
US20100261632A1 (en) * 2007-08-02 2010-10-14 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of residue from a microelectronic device
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US8540893B2 (en) * 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
US20110073800A1 (en) * 2009-09-25 2011-03-31 Hongyu Wang Abrasive-free chemical mechanical polishing compositions
JP5051323B2 (ja) * 2010-02-15 2012-10-17 三菱瓦斯化学株式会社 銅層及びモリブデン層を含む多層薄膜用エッチング液
JP5656132B2 (ja) 2010-04-30 2015-01-21 株式会社Sumco シリコンウェーハの研磨方法
US9644274B2 (en) 2011-07-04 2017-05-09 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper or a compound comprised mainly of copper
CN103717787B (zh) * 2011-07-26 2016-08-24 三菱瓦斯化学株式会社 铜/钼系多层薄膜用蚀刻液
CN103525314B (zh) * 2013-10-30 2014-12-10 湖北三翔超硬材料有限公司 高效金刚石润滑冷却抛光液及制备方法和应用
CN104131289B (zh) * 2014-07-01 2015-09-23 安徽拓普森电池有限责任公司 一种具有杀菌效果的抛光液及其制备方法
JP6837958B2 (ja) * 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
JP7520457B2 (ja) * 2020-07-30 2024-07-23 株式会社ディスコ 研磨液
CN113969173B (zh) * 2021-09-23 2022-05-13 易安爱富(武汉)科技有限公司 一种ITO/Ag/ITO复合金属层薄膜的蚀刻液

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CN1288928A (zh) * 1999-09-20 2001-03-28 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
CN1357586A (zh) * 2000-11-29 2002-07-10 不二见株式会社 抛光存储器硬盘用基片的抛光组合物及抛光方法
US20030228763A1 (en) * 2002-06-07 2003-12-11 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
CN1509322A (zh) * 2001-05-18 2004-06-30 �޵¶��عɹ�˾ 化学机械抛光组合物及其相关方法

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JP3458023B2 (ja) * 1995-08-01 2003-10-20 メック株式会社 銅および銅合金のマイクロエッチング剤
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
KR100581649B1 (ko) 1998-06-10 2006-05-23 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 금속 ｃｍｐ에서 광택화를 위한 조성물 및 방법
JP4095731B2 (ja) 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
US20010054706A1 (en) 1999-07-19 2001-12-27 Joseph A. Levert Compositions and processes for spin etch planarization
TW501197B (en) 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
DE60006135T2 (de) 1999-08-24 2004-07-08 Rodel Holdings, Inc., Wilmington Zusammensetzung und verfahren zum chemisch-mechanischen polieren von isolatoren und metallen
WO2001017006A1 (en) 1999-08-26 2001-03-08 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP2002050595A (ja) 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6936541B2 (en) 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
US6605537B2 (en) 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
JP3768402B2 (ja) 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2003282496A (ja) * 2002-03-20 2003-10-03 Asahi Kasei Corp 研磨材組成物
EP1490897B1 (en) 2002-03-25 2007-01-31 Rohm and Haas Electronic Materials CMP Holdings, Inc. Tantalum barrier removal solution
US20030219982A1 (en) 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
US20040092102A1 (en) 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
KR100504608B1 (ko) * 2002-12-30 2005-08-01 제일모직주식회사 구리배선 연마용 슬러리 조성물
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto

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Publication number Priority date Publication date Assignee Title
CN1288928A (zh) * 1999-09-20 2001-03-28 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
CN1357586A (zh) * 2000-11-29 2002-07-10 不二见株式会社 抛光存储器硬盘用基片的抛光组合物及抛光方法
CN1509322A (zh) * 2001-05-18 2004-06-30 �޵¶��عɹ�˾ 化学机械抛光组合物及其相关方法
US20030228763A1 (en) * 2002-06-07 2003-12-11 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103210058A (zh) * 2010-12-15 2013-07-17 第一毛织株式会社 蚀刻膏，其生产方法以及使用其形成图案的方法
CN104603227A (zh) * 2012-08-31 2015-05-06 福吉米株式会社 研磨用组合物和基板的制造方法
US9505950B2 (en) 2012-08-31 2016-11-29 Fujimi Incorporated Polishing composition and method for producing substrate
CN104603227B (zh) * 2012-08-31 2017-03-08 福吉米株式会社 研磨用组合物和基板的制造方法

Also Published As

Publication number Publication date
TW200624543A (en) 2006-07-16
CN1782006A (zh) 2006-06-07
TWI359860B (en) 2012-03-11
SG122919A1 (en) 2006-06-29
KR20060058009A (ko) 2006-05-29
JP2006165541A (ja) 2006-06-22
US20060110924A1 (en) 2006-05-25
JP5091400B2 (ja) 2012-12-05
KR101101169B1 (ko) 2012-01-05
US7435356B2 (en) 2008-10-14

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Address after: Delaware, USA

Patentee after: DuPont Electronic Materials Holdings Co.,Ltd.

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Address before: Delaware, USA

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc.

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