TWI359860B - Abrasive-free chemical mechanical polishing compos - Google Patents

Abrasive-free chemical mechanical polishing compos Download PDF

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Publication number
TWI359860B
TWI359860B TW094139567A TW94139567A TWI359860B TW I359860 B TWI359860 B TW I359860B TW 094139567 A TW094139567 A TW 094139567A TW 94139567 A TW94139567 A TW 94139567A TW I359860 B TWI359860 B TW I359860B
Authority
TW
Taiwan
Prior art keywords
weight
composition
amphoteric polymer
acid
chemical mechanical
Prior art date
Application number
TW094139567A
Other languages
English (en)
Chinese (zh)
Other versions
TW200624543A (en
Inventor
Tirthankar Ghosh
Robert D Solomon
Hongyu Wang
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of TW200624543A publication Critical patent/TW200624543A/zh
Application granted granted Critical
Publication of TWI359860B publication Critical patent/TWI359860B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW094139567A 2004-11-24 2005-11-11 Abrasive-free chemical mechanical polishing compos TWI359860B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/996,689 US7435356B2 (en) 2004-11-24 2004-11-24 Abrasive-free chemical mechanical polishing compositions and methods relating thereto

Publications (2)

Publication Number Publication Date
TW200624543A TW200624543A (en) 2006-07-16
TWI359860B true TWI359860B (en) 2012-03-11

Family

ID=36461468

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094139567A TWI359860B (en) 2004-11-24 2005-11-11 Abrasive-free chemical mechanical polishing compos

Country Status (6)

Country Link
US (1) US7435356B2 (https=)
JP (1) JP5091400B2 (https=)
KR (1) KR101101169B1 (https=)
CN (1) CN100362068C (https=)
SG (1) SG122919A1 (https=)
TW (1) TWI359860B (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1803964B (zh) * 1998-12-28 2010-12-15 日立化成工业株式会社 金属研磨液材料、金属研磨液、其制造方法及使用它的研磨方法
US20100261632A1 (en) * 2007-08-02 2010-10-14 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of residue from a microelectronic device
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US8540893B2 (en) * 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
US20110073800A1 (en) * 2009-09-25 2011-03-31 Hongyu Wang Abrasive-free chemical mechanical polishing compositions
JP5051323B2 (ja) * 2010-02-15 2012-10-17 三菱瓦斯化学株式会社 銅層及びモリブデン層を含む多層薄膜用エッチング液
JP5656132B2 (ja) 2010-04-30 2015-01-21 株式会社Sumco シリコンウェーハの研磨方法
KR20120067198A (ko) * 2010-12-15 2012-06-25 제일모직주식회사 에칭 페이스트, 그 제조방법 및 이를 이용한 패턴 형성방법
US9644274B2 (en) 2011-07-04 2017-05-09 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper or a compound comprised mainly of copper
CN103717787B (zh) * 2011-07-26 2016-08-24 三菱瓦斯化学株式会社 铜/钼系多层薄膜用蚀刻液
WO2014034425A1 (ja) * 2012-08-31 2014-03-06 株式会社 フジミインコーポレーテッド 研磨用組成物及び基板の製造方法
CN103525314B (zh) * 2013-10-30 2014-12-10 湖北三翔超硬材料有限公司 高效金刚石润滑冷却抛光液及制备方法和应用
CN104131289B (zh) * 2014-07-01 2015-09-23 安徽拓普森电池有限责任公司 一种具有杀菌效果的抛光液及其制备方法
JP6837958B2 (ja) * 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
JP7520457B2 (ja) * 2020-07-30 2024-07-23 株式会社ディスコ 研磨液
CN113969173B (zh) * 2021-09-23 2022-05-13 易安爱富(武汉)科技有限公司 一种ITO/Ag/ITO复合金属层薄膜的蚀刻液

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3458023B2 (ja) * 1995-08-01 2003-10-20 メック株式会社 銅および銅合金のマイクロエッチング剤
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
KR100581649B1 (ko) 1998-06-10 2006-05-23 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 금속 ｃｍｐ에서 광택화를 위한 조성물 및 방법
JP4095731B2 (ja) 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
US20010054706A1 (en) 1999-07-19 2001-12-27 Joseph A. Levert Compositions and processes for spin etch planarization
TW501197B (en) 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
DE60006135T2 (de) 1999-08-24 2004-07-08 Rodel Holdings, Inc., Wilmington Zusammensetzung und verfahren zum chemisch-mechanischen polieren von isolatoren und metallen
WO2001017006A1 (en) 1999-08-26 2001-03-08 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
CN1125862C (zh) * 1999-09-20 2003-10-29 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
JP2002050595A (ja) 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6936541B2 (en) 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
US6605537B2 (en) 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
JP3768402B2 (ja) 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP4009986B2 (ja) * 2000-11-29 2007-11-21 株式会社フジミインコーポレーテッド 研磨用組成物、およびそれを用いてメモリーハードディスクを研磨する研磨方法
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP2003282496A (ja) * 2002-03-20 2003-10-03 Asahi Kasei Corp 研磨材組成物
EP1490897B1 (en) 2002-03-25 2007-01-31 Rohm and Haas Electronic Materials CMP Holdings, Inc. Tantalum barrier removal solution
US20030219982A1 (en) 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
US6936543B2 (en) 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US20040092102A1 (en) 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
KR100504608B1 (ko) * 2002-12-30 2005-08-01 제일모직주식회사 구리배선 연마용 슬러리 조성물
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto

Also Published As

Publication number Publication date
TW200624543A (en) 2006-07-16
CN1782006A (zh) 2006-06-07
CN100362068C (zh) 2008-01-16
SG122919A1 (en) 2006-06-29
KR20060058009A (ko) 2006-05-29
JP2006165541A (ja) 2006-06-22
US20060110924A1 (en) 2006-05-25
JP5091400B2 (ja) 2012-12-05
KR101101169B1 (ko) 2012-01-05
US7435356B2 (en) 2008-10-14

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