CN100362068C - 不含磨料的化学机械抛光组合物及相关方法 - Google Patents

不含磨料的化学机械抛光组合物及相关方法 Download PDF

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Publication number
CN100362068C
CN100362068C CNB2005101287071A CN200510128707A CN100362068C CN 100362068 C CN100362068 C CN 100362068C CN B2005101287071 A CNB2005101287071 A CN B2005101287071A CN 200510128707 A CN200510128707 A CN 200510128707A CN 100362068 C CN100362068 C CN 100362068C
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China
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weight
amphiphilic polymer
composition
water
grams
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB2005101287071A
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English (en)
Chinese (zh)
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CN1782006A (zh
Inventor
T·高希
R·D·所罗门
王红雨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
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ROHM AND HAAS ELECTRONIC MATER
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB2005101287071A 2004-11-24 2005-11-24 不含磨料的化学机械抛光组合物及相关方法 Expired - Lifetime CN100362068C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/996,689 US7435356B2 (en) 2004-11-24 2004-11-24 Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US10/996,689 2004-11-24

Publications (2)

Publication Number Publication Date
CN1782006A CN1782006A (zh) 2006-06-07
CN100362068C true CN100362068C (zh) 2008-01-16

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ID=36461468

Family Applications (1)

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CNB2005101287071A Expired - Lifetime CN100362068C (zh) 2004-11-24 2005-11-24 不含磨料的化学机械抛光组合物及相关方法

Country Status (6)

Country Link
US (1) US7435356B2 (enExample)
JP (1) JP5091400B2 (enExample)
KR (1) KR101101169B1 (enExample)
CN (1) CN100362068C (enExample)
SG (1) SG122919A1 (enExample)
TW (1) TWI359860B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103210058A (zh) * 2010-12-15 2013-07-17 第一毛织株式会社 蚀刻膏，其生产方法以及使用其形成图案的方法
CN104603227A (zh) * 2012-08-31 2015-05-06 福吉米株式会社 研磨用组合物和基板的制造方法

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* Cited by examiner, † Cited by third party
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KR100463315B1 (ko) * 1998-12-28 2005-01-07 히다치 가세고교 가부시끼가이샤 금속용 연마액 재료, 금속용 연마액, 그 제조방법 및그것을 사용한 연마방법
JP2010535422A (ja) * 2007-08-02 2010-11-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロ電子デバイスから残渣を除去するための非フッ化物含有組成物
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US8540893B2 (en) * 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
US20110073800A1 (en) * 2009-09-25 2011-03-31 Hongyu Wang Abrasive-free chemical mechanical polishing compositions
KR101271414B1 (ko) * 2010-02-15 2013-06-05 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 구리층 및 몰리브덴층을 포함하는 다층 박막용 에칭액
KR101439995B1 (ko) * 2010-04-30 2014-09-12 가부시키가이샤 사무코 실리콘 웨이퍼의 연마 방법
WO2013005631A1 (ja) * 2011-07-04 2013-01-10 三菱瓦斯化学株式会社 銅または銅を主成分とする化合物のエッチング液
KR101901721B1 (ko) * 2011-07-26 2018-09-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 구리/몰리브덴계 다층 박막용 에칭액
CN103525314B (zh) * 2013-10-30 2014-12-10 湖北三翔超硬材料有限公司 高效金刚石润滑冷却抛光液及制备方法和应用
CN104131289B (zh) * 2014-07-01 2015-09-23 安徽拓普森电池有限责任公司 一种具有杀菌效果的抛光液及其制备方法
JP6837958B2 (ja) 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
JP7520457B2 (ja) * 2020-07-30 2024-07-23 株式会社ディスコ 研磨液
CN113969173B (zh) * 2021-09-23 2022-05-13 易安爱富(武汉)科技有限公司 一种ITO/Ag/ITO复合金属层薄膜的蚀刻液

Citations (4)

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CN1288928A (zh) * 1999-09-20 2001-03-28 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
CN1357586A (zh) * 2000-11-29 2002-07-10 不二见株式会社 抛光存储器硬盘用基片的抛光组合物及抛光方法
US20030228763A1 (en) * 2002-06-07 2003-12-11 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
CN1509322A (zh) * 2001-05-18 2004-06-30 �޵¶��عɹ�˾ 化学机械抛光组合物及其相关方法

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JP3458023B2 (ja) * 1995-08-01 2003-10-20 メック株式会社 銅および銅合金のマイクロエッチング剤
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
EP1102821A4 (en) 1998-06-10 2004-05-19 Rodel Inc COMPOSITION AND METHOD FOR CMP POLISHING METAL
JP4095731B2 (ja) 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
US20010054706A1 (en) 1999-07-19 2001-12-27 Joseph A. Levert Compositions and processes for spin etch planarization
TW501197B (en) 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
EP1210395B1 (en) 1999-08-24 2003-10-22 Rodel Holdings, Inc. Compositions for insulator and metal cmp and methods relating thereto
AU6731600A (en) 1999-08-26 2001-03-26 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP2002050595A (ja) 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6936541B2 (en) 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
US6605537B2 (en) 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
JP3768402B2 (ja) 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2003282496A (ja) * 2002-03-20 2003-10-03 Asahi Kasei Corp 研磨材組成物
AU2003218389A1 (en) 2002-03-25 2003-10-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tantalum barrier removal solution
US20030219982A1 (en) 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
US20040092102A1 (en) 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
KR100504608B1 (ko) * 2002-12-30 2005-08-01 제일모직주식회사 구리배선 연마용 슬러리 조성물
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1288928A (zh) * 1999-09-20 2001-03-28 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
CN1357586A (zh) * 2000-11-29 2002-07-10 不二见株式会社 抛光存储器硬盘用基片的抛光组合物及抛光方法
CN1509322A (zh) * 2001-05-18 2004-06-30 �޵¶��عɹ�˾ 化学机械抛光组合物及其相关方法
US20030228763A1 (en) * 2002-06-07 2003-12-11 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103210058A (zh) * 2010-12-15 2013-07-17 第一毛织株式会社 蚀刻膏，其生产方法以及使用其形成图案的方法
CN104603227A (zh) * 2012-08-31 2015-05-06 福吉米株式会社 研磨用组合物和基板的制造方法
US9505950B2 (en) 2012-08-31 2016-11-29 Fujimi Incorporated Polishing composition and method for producing substrate
CN104603227B (zh) * 2012-08-31 2017-03-08 福吉米株式会社 研磨用组合物和基板的制造方法

Also Published As

Publication number Publication date
KR20060058009A (ko) 2006-05-29
JP2006165541A (ja) 2006-06-22
US20060110924A1 (en) 2006-05-25
KR101101169B1 (ko) 2012-01-05
US7435356B2 (en) 2008-10-14
CN1782006A (zh) 2006-06-07
TWI359860B (en) 2012-03-11
TW200624543A (en) 2006-07-16
JP5091400B2 (ja) 2012-12-05
SG122919A1 (en) 2006-06-29

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Address after: Delaware, USA

Patentee after: DuPont Electronic Materials Holdings Co.,Ltd.

Country or region after: U.S.A.

Address before: Delaware, USA

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc.

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