KR101101169B1 - 연마제가 없는 화학적 기계적 폴리싱 조성물 및 그와 관련된 방법 - Google Patents

연마제가 없는 화학적 기계적 폴리싱 조성물 및 그와 관련된 방법 Download PDF

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KR101101169B1
KR101101169B1 KR1020050102799A KR20050102799A KR101101169B1 KR 101101169 B1 KR101101169 B1 KR 101101169B1 KR 1020050102799 A KR1020050102799 A KR 1020050102799A KR 20050102799 A KR20050102799 A KR 20050102799A KR 101101169 B1 KR101101169 B1 KR 101101169B1
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South Korea
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weight percent
composition
polishing
amphiphilic polymer
acid
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KR1020050102799A
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Korean (ko)
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KR20060058009A (ko
Inventor
티르탱카르 고쉬
로버츠 디. 솔로몬
홍규 왕
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020050102799A 2004-11-24 2005-10-31 연마제가 없는 화학적 기계적 폴리싱 조성물 및 그와 관련된 방법 Expired - Lifetime KR101101169B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/996,689 2004-11-24
US10/996,689 US7435356B2 (en) 2004-11-24 2004-11-24 Abrasive-free chemical mechanical polishing compositions and methods relating thereto

Publications (2)

Publication Number Publication Date
KR20060058009A KR20060058009A (ko) 2006-05-29
KR101101169B1 true KR101101169B1 (ko) 2012-01-05

Family

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Family Applications (1)

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KR1020050102799A Expired - Lifetime KR101101169B1 (ko) 2004-11-24 2005-10-31 연마제가 없는 화학적 기계적 폴리싱 조성물 및 그와 관련된 방법

Country Status (6)

Country Link
US (1) US7435356B2 (enExample)
JP (1) JP5091400B2 (enExample)
KR (1) KR101101169B1 (enExample)
CN (1) CN100362068C (enExample)
SG (1) SG122919A1 (enExample)
TW (1) TWI359860B (enExample)

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KR100597449B1 (ko) * 1998-12-28 2006-07-06 히다치 가세고교 가부시끼가이샤 금속용 연마액 재료, 금속용 연마액, 그 제조방법 및그것을 사용한 연마방법
KR20100051839A (ko) * 2007-08-02 2010-05-18 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 마이크로전자 장치로부터 잔사를 제거하기 위한 플루오라이드 비-함유 조성물
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US8540893B2 (en) * 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
US20110073800A1 (en) * 2009-09-25 2011-03-31 Hongyu Wang Abrasive-free chemical mechanical polishing compositions
US20120319033A1 (en) * 2010-02-15 2012-12-20 Mitsubishi Gas Chemical Company, Inc. Etching solution for multilayer thin film having copper layer and molybdenum layer contained therein
KR101439995B1 (ko) 2010-04-30 2014-09-12 가부시키가이샤 사무코 실리콘 웨이퍼의 연마 방법
KR20120067198A (ko) * 2010-12-15 2012-06-25 제일모직주식회사 에칭 페이스트, 그 제조방법 및 이를 이용한 패턴 형성방법
US9644274B2 (en) 2011-07-04 2017-05-09 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper or a compound comprised mainly of copper
US9365770B2 (en) 2011-07-26 2016-06-14 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper/molybdenum-based multilayer thin film
DE112013004295B4 (de) * 2012-08-31 2024-12-05 Fujimi Incorporated Polierzusammensetzung, deren Verwendung und Verfahren zur Herstellung eines Substrats
CN103525314B (zh) * 2013-10-30 2014-12-10 湖北三翔超硬材料有限公司 高效金刚石润滑冷却抛光液及制备方法和应用
CN104131289B (zh) * 2014-07-01 2015-09-23 安徽拓普森电池有限责任公司 一种具有杀菌效果的抛光液及其制备方法
JP6837958B2 (ja) 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
JP7520457B2 (ja) * 2020-07-30 2024-07-23 株式会社ディスコ 研磨液
CN113969173B (zh) * 2021-09-23 2022-05-13 易安爱富(武汉)科技有限公司 一种ITO/Ag/ITO复合金属层薄膜的蚀刻液

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JPH0941162A (ja) * 1995-08-01 1997-02-10 Mec Kk 銅および銅合金のマイクロエッチング剤
EP1223609A1 (en) * 1999-08-26 2002-07-17 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP2003505859A (ja) 1999-07-19 2003-02-12 アライドシグナル インコーポレイテッド スピンエッチ平坦化のための組成物及び方法
KR20040060613A (ko) * 2002-12-30 2004-07-06 제일모직주식회사 구리배선 연마용 슬러리 조성물

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JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
KR100581649B1 (ko) 1998-06-10 2006-05-23 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 금속 ｃｍｐ에서 광택화를 위한 조성물 및 방법
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
TW501197B (en) 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
KR20020027571A (ko) 1999-08-24 2002-04-13 갤반 마틴 절연체와 금속의 ｃｍｐ용 조성물 및 이에 관련된 방법
CN1125862C (zh) * 1999-09-20 2003-10-29 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
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JP3768402B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP4009986B2 (ja) * 2000-11-29 2007-11-21 株式会社フジミインコーポレーテッド 研磨用組成物、およびそれを用いてメモリーハードディスクを研磨する研磨方法
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0941162A (ja) * 1995-08-01 1997-02-10 Mec Kk 銅および銅合金のマイクロエッチング剤
JP2003505859A (ja) 1999-07-19 2003-02-12 アライドシグナル インコーポレイテッド スピンエッチ平坦化のための組成物及び方法
EP1223609A1 (en) * 1999-08-26 2002-07-17 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
KR20040060613A (ko) * 2002-12-30 2004-07-06 제일모직주식회사 구리배선 연마용 슬러리 조성물

Also Published As

Publication number Publication date
US20060110924A1 (en) 2006-05-25
JP2006165541A (ja) 2006-06-22
SG122919A1 (en) 2006-06-29
TWI359860B (en) 2012-03-11
US7435356B2 (en) 2008-10-14
KR20060058009A (ko) 2006-05-29
JP5091400B2 (ja) 2012-12-05
CN100362068C (zh) 2008-01-16
CN1782006A (zh) 2006-06-07
TW200624543A (en) 2006-07-16

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