KR101101169B1 - 연마제가 없는 화학적 기계적 폴리싱 조성물 및 그와 관련된 방법 - Google Patents

연마제가 없는 화학적 기계적 폴리싱 조성물 및 그와 관련된 방법 Download PDF

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KR101101169B1
KR101101169B1 KR1020050102799A KR20050102799A KR101101169B1 KR 101101169 B1 KR101101169 B1 KR 101101169B1 KR 1020050102799 A KR1020050102799 A KR 1020050102799A KR 20050102799 A KR20050102799 A KR 20050102799A KR 101101169 B1 KR101101169 B1 KR 101101169B1
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South Korea
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weight percent
composition
polishing
amphiphilic polymer
acid
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Korean (ko)
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KR20060058009A (ko
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티르탱카르 고쉬
로버츠 디. 솔로몬
홍규 왕
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020050102799A 2004-11-24 2005-10-31 연마제가 없는 화학적 기계적 폴리싱 조성물 및 그와 관련된 방법 Expired - Lifetime KR101101169B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/996,689 US7435356B2 (en) 2004-11-24 2004-11-24 Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US10/996,689 2004-11-24

Publications (2)

Publication Number Publication Date
KR20060058009A KR20060058009A (ko) 2006-05-29
KR101101169B1 true KR101101169B1 (ko) 2012-01-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050102799A Expired - Lifetime KR101101169B1 (ko) 2004-11-24 2005-10-31 연마제가 없는 화학적 기계적 폴리싱 조성물 및 그와 관련된 방법

Country Status (6)

Country Link
US (1) US7435356B2 (enExample)
JP (1) JP5091400B2 (enExample)
KR (1) KR101101169B1 (enExample)
CN (1) CN100362068C (enExample)
SG (1) SG122919A1 (enExample)
TW (1) TWI359860B (enExample)

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KR100463315B1 (ko) * 1998-12-28 2005-01-07 히다치 가세고교 가부시끼가이샤 금속용 연마액 재료, 금속용 연마액, 그 제조방법 및그것을 사용한 연마방법
JP2010535422A (ja) * 2007-08-02 2010-11-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロ電子デバイスから残渣を除去するための非フッ化物含有組成物
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US8540893B2 (en) * 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
US20110073800A1 (en) * 2009-09-25 2011-03-31 Hongyu Wang Abrasive-free chemical mechanical polishing compositions
KR101271414B1 (ko) * 2010-02-15 2013-06-05 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 구리층 및 몰리브덴층을 포함하는 다층 박막용 에칭액
KR101439995B1 (ko) * 2010-04-30 2014-09-12 가부시키가이샤 사무코 실리콘 웨이퍼의 연마 방법
KR20120067198A (ko) * 2010-12-15 2012-06-25 제일모직주식회사 에칭 페이스트, 그 제조방법 및 이를 이용한 패턴 형성방법
WO2013005631A1 (ja) * 2011-07-04 2013-01-10 三菱瓦斯化学株式会社 銅または銅を主成分とする化合物のエッチング液
KR101901721B1 (ko) * 2011-07-26 2018-09-28 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 구리/몰리브덴계 다층 박막용 에칭액
US9505950B2 (en) 2012-08-31 2016-11-29 Fujimi Incorporated Polishing composition and method for producing substrate
CN103525314B (zh) * 2013-10-30 2014-12-10 湖北三翔超硬材料有限公司 高效金刚石润滑冷却抛光液及制备方法和应用
CN104131289B (zh) * 2014-07-01 2015-09-23 安徽拓普森电池有限责任公司 一种具有杀菌效果的抛光液及其制备方法
JP6837958B2 (ja) 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
JP7520457B2 (ja) * 2020-07-30 2024-07-23 株式会社ディスコ 研磨液
CN113969173B (zh) * 2021-09-23 2022-05-13 易安爱富(武汉)科技有限公司 一种ITO/Ag/ITO复合金属层薄膜的蚀刻液

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JPH0941162A (ja) * 1995-08-01 1997-02-10 Mec Kk 銅および銅合金のマイクロエッチング剤
EP1223609A1 (en) * 1999-08-26 2002-07-17 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP2003505859A (ja) 1999-07-19 2003-02-12 アライドシグナル インコーポレイテッド スピンエッチ平坦化のための組成物及び方法
KR20040060613A (ko) * 2002-12-30 2004-07-06 제일모직주식회사 구리배선 연마용 슬러리 조성물

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JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
EP1102821A4 (en) 1998-06-10 2004-05-19 Rodel Inc COMPOSITION AND METHOD FOR CMP POLISHING METAL
JP4095731B2 (ja) 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
TW501197B (en) 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
EP1210395B1 (en) 1999-08-24 2003-10-22 Rodel Holdings, Inc. Compositions for insulator and metal cmp and methods relating thereto
CN1125862C (zh) * 1999-09-20 2003-10-29 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
JP2002050595A (ja) 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6936541B2 (en) 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
US6605537B2 (en) 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
JP3768402B2 (ja) 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP4009986B2 (ja) * 2000-11-29 2007-11-21 株式会社フジミインコーポレーテッド 研磨用組成物、およびそれを用いてメモリーハードディスクを研磨する研磨方法
US6632259B2 (en) 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP2003282496A (ja) * 2002-03-20 2003-10-03 Asahi Kasei Corp 研磨材組成物
AU2003218389A1 (en) 2002-03-25 2003-10-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tantalum barrier removal solution
US20030219982A1 (en) 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
US6936543B2 (en) 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US20040092102A1 (en) 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0941162A (ja) * 1995-08-01 1997-02-10 Mec Kk 銅および銅合金のマイクロエッチング剤
JP2003505859A (ja) 1999-07-19 2003-02-12 アライドシグナル インコーポレイテッド スピンエッチ平坦化のための組成物及び方法
EP1223609A1 (en) * 1999-08-26 2002-07-17 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
KR20040060613A (ko) * 2002-12-30 2004-07-06 제일모직주식회사 구리배선 연마용 슬러리 조성물

Also Published As

Publication number Publication date
KR20060058009A (ko) 2006-05-29
JP2006165541A (ja) 2006-06-22
US20060110924A1 (en) 2006-05-25
US7435356B2 (en) 2008-10-14
CN100362068C (zh) 2008-01-16
CN1782006A (zh) 2006-06-07
TWI359860B (en) 2012-03-11
TW200624543A (en) 2006-07-16
JP5091400B2 (ja) 2012-12-05
SG122919A1 (en) 2006-06-29

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