SG122919A1 - Abrasive-free chemical mechanical polishing compositions and methods relating thereto - Google Patents

Abrasive-free chemical mechanical polishing compositions and methods relating thereto

Info

Publication number
SG122919A1
SG122919A1 SG200507413A SG200507413A SG122919A1 SG 122919 A1 SG122919 A1 SG 122919A1 SG 200507413 A SG200507413 A SG 200507413A SG 200507413 A SG200507413 A SG 200507413A SG 122919 A1 SG122919 A1 SG 122919A1
Authority
SG
Singapore
Prior art keywords
abrasive
mechanical polishing
chemical mechanical
polishing compositions
methods relating
Prior art date
Application number
SG200507413A
Other languages
English (en)
Inventor
Tirthankar Ghosh
Robert D Solomon
Hongyu Wang
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of SG122919A1 publication Critical patent/SG122919A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG200507413A 2004-11-24 2005-11-23 Abrasive-free chemical mechanical polishing compositions and methods relating thereto SG122919A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/996,689 US7435356B2 (en) 2004-11-24 2004-11-24 Abrasive-free chemical mechanical polishing compositions and methods relating thereto

Publications (1)

Publication Number Publication Date
SG122919A1 true SG122919A1 (en) 2006-06-29

Family

ID=36461468

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200507413A SG122919A1 (en) 2004-11-24 2005-11-23 Abrasive-free chemical mechanical polishing compositions and methods relating thereto

Country Status (6)

Country Link
US (1) US7435356B2 (enExample)
JP (1) JP5091400B2 (enExample)
KR (1) KR101101169B1 (enExample)
CN (1) CN100362068C (enExample)
SG (1) SG122919A1 (enExample)
TW (1) TWI359860B (enExample)

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KR100597449B1 (ko) * 1998-12-28 2006-07-06 히다치 가세고교 가부시끼가이샤 금속용 연마액 재료, 금속용 연마액, 그 제조방법 및그것을 사용한 연마방법
KR20100051839A (ko) * 2007-08-02 2010-05-18 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 마이크로전자 장치로부터 잔사를 제거하기 위한 플루오라이드 비-함유 조성물
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US8540893B2 (en) * 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
US20110073800A1 (en) * 2009-09-25 2011-03-31 Hongyu Wang Abrasive-free chemical mechanical polishing compositions
US20120319033A1 (en) * 2010-02-15 2012-12-20 Mitsubishi Gas Chemical Company, Inc. Etching solution for multilayer thin film having copper layer and molybdenum layer contained therein
KR101439995B1 (ko) 2010-04-30 2014-09-12 가부시키가이샤 사무코 실리콘 웨이퍼의 연마 방법
KR20120067198A (ko) * 2010-12-15 2012-06-25 제일모직주식회사 에칭 페이스트, 그 제조방법 및 이를 이용한 패턴 형성방법
US9644274B2 (en) 2011-07-04 2017-05-09 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper or a compound comprised mainly of copper
US9365770B2 (en) 2011-07-26 2016-06-14 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper/molybdenum-based multilayer thin film
DE112013004295B4 (de) * 2012-08-31 2024-12-05 Fujimi Incorporated Polierzusammensetzung, deren Verwendung und Verfahren zur Herstellung eines Substrats
CN103525314B (zh) * 2013-10-30 2014-12-10 湖北三翔超硬材料有限公司 高效金刚石润滑冷却抛光液及制备方法和应用
CN104131289B (zh) * 2014-07-01 2015-09-23 安徽拓普森电池有限责任公司 一种具有杀菌效果的抛光液及其制备方法
JP6837958B2 (ja) 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
JP7520457B2 (ja) * 2020-07-30 2024-07-23 株式会社ディスコ 研磨液
CN113969173B (zh) * 2021-09-23 2022-05-13 易安爱富(武汉)科技有限公司 一种ITO/Ag/ITO复合金属层薄膜的蚀刻液

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JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
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US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto

Also Published As

Publication number Publication date
US20060110924A1 (en) 2006-05-25
JP2006165541A (ja) 2006-06-22
TWI359860B (en) 2012-03-11
US7435356B2 (en) 2008-10-14
KR20060058009A (ko) 2006-05-29
JP5091400B2 (ja) 2012-12-05
CN100362068C (zh) 2008-01-16
KR101101169B1 (ko) 2012-01-05
CN1782006A (zh) 2006-06-07
TW200624543A (en) 2006-07-16

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