CN100361302C - 混合衬底、集成半导体结构以及它们的制备方法 - Google Patents
混合衬底、集成半导体结构以及它们的制备方法 Download PDFInfo
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- CN100361302C CN100361302C CNB2004100870082A CN200410087008A CN100361302C CN 100361302 C CN100361302 C CN 100361302C CN B2004100870082 A CNB2004100870082 A CN B2004100870082A CN 200410087008 A CN200410087008 A CN 200410087008A CN 100361302 C CN100361302 C CN 100361302C
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- semiconductor
- semiconductor layer
- crystal orientation
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- mixed substrates
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Claims (25)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/696,634 US7023055B2 (en) | 2003-10-29 | 2003-10-29 | CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding |
US10/696,634 | 2003-10-29 | ||
US10/799,380 | 2004-03-12 | ||
US10/799,380 US7023057B2 (en) | 2003-10-29 | 2004-03-12 | CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding |
Publications (2)
Publication Number | Publication Date |
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CN1624921A CN1624921A (zh) | 2005-06-08 |
CN100361302C true CN100361302C (zh) | 2008-01-09 |
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Application Number | Title | Priority Date | Filing Date |
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CNB2004100870082A Expired - Fee Related CN100361302C (zh) | 2003-10-29 | 2004-10-22 | 混合衬底、集成半导体结构以及它们的制备方法 |
Country Status (2)
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JP (1) | JP4328708B2 (zh) |
CN (1) | CN100361302C (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4564929B2 (ja) * | 2006-02-21 | 2010-10-20 | キヤノン株式会社 | 3次元フォトニック結晶の形成方法 |
US8016941B2 (en) * | 2007-02-05 | 2011-09-13 | Infineon Technologies Ag | Method and apparatus for manufacturing a semiconductor |
JP2009054705A (ja) | 2007-08-24 | 2009-03-12 | Toshiba Corp | 半導体基板、半導体装置およびその製造方法 |
CN101859783B (zh) * | 2010-04-30 | 2012-05-30 | 北京大学 | 一种抗总剂量辐照的soi器件及其制造方法 |
CN101859782B (zh) * | 2010-04-30 | 2012-05-30 | 北京大学 | 抗总剂量辐照的soi器件及其制造方法 |
CN103295964B (zh) * | 2012-02-27 | 2014-12-10 | 中国科学院上海微系统与信息技术研究所 | 基于混合晶向soi及沟道应力的器件系统结构及制备方法 |
CN102709252B (zh) * | 2012-05-22 | 2014-11-05 | 上海华力微电子有限公司 | 一种提高静态随机存储器读出冗余度的方法 |
CN103021815B (zh) * | 2012-12-26 | 2015-06-24 | 中国科学院上海微系统与信息技术研究所 | 混合共平面衬底结构及其制备方法 |
CN109904064A (zh) * | 2019-01-21 | 2019-06-18 | 中国航空工业集团公司北京长城航空测控技术研究所 | 一种提高碳化硅直接键合强度的方法 |
CN111900200A (zh) * | 2020-06-24 | 2020-11-06 | 西安交通大学 | 一种金刚石基氮化镓复合晶片及其键合制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5384473A (en) * | 1991-10-01 | 1995-01-24 | Kabushiki Kaisha Toshiba | Semiconductor body having element formation surfaces with different orientations |
US5802232A (en) * | 1996-02-16 | 1998-09-01 | Bell Communications Research, Inc. | Bonded structure with portions of differing crystallographic orientations, particularly useful as a non linear optical waveguide |
CN1497739A (zh) * | 2002-10-17 | 2004-05-19 | 株式会社瑞萨科技 | 半导体装置及其制造方法 |
-
2004
- 2004-10-22 CN CNB2004100870082A patent/CN100361302C/zh not_active Expired - Fee Related
- 2004-10-26 JP JP2004310704A patent/JP4328708B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5384473A (en) * | 1991-10-01 | 1995-01-24 | Kabushiki Kaisha Toshiba | Semiconductor body having element formation surfaces with different orientations |
US5802232A (en) * | 1996-02-16 | 1998-09-01 | Bell Communications Research, Inc. | Bonded structure with portions of differing crystallographic orientations, particularly useful as a non linear optical waveguide |
CN1497739A (zh) * | 2002-10-17 | 2004-05-19 | 株式会社瑞萨科技 | 半导体装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1624921A (zh) | 2005-06-08 |
JP4328708B2 (ja) | 2009-09-09 |
JP2005136410A (ja) | 2005-05-26 |
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Effective date of registration: 20171120 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171120 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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