CH619303A5 - - Google Patents
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- Publication number
- CH619303A5 CH619303A5 CH1586774A CH1586774A CH619303A5 CH 619303 A5 CH619303 A5 CH 619303A5 CH 1586774 A CH1586774 A CH 1586774A CH 1586774 A CH1586774 A CH 1586774A CH 619303 A5 CH619303 A5 CH 619303A5
- Authority
- CH
- Switzerland
- Prior art keywords
- layer
- layers
- lacquer
- thickness
- film
- Prior art date
Links
- 239000010410 layer Substances 0.000 description 130
- 239000004922 lacquer Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 33
- 229920000642 polymer Polymers 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 238000004090 dissolution Methods 0.000 description 17
- 230000035945 sensitivity Effects 0.000 description 17
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 15
- 239000004926 polymethyl methacrylate Substances 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 230000005855 radiation Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000003973 paint Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 6
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- 125000005907 alkyl ester group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229920006237 degradable polymer Polymers 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/31909—Next to second addition polymer from unsaturated monomers
- Y10T428/31928—Ester, halide or nitrile of addition polymer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Plasma & Fusion (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/426,403 US3934057A (en) | 1973-12-19 | 1973-12-19 | High sensitivity positive resist layers and mask formation process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH619303A5 true CH619303A5 (en, 2012) | 1980-09-15 |
Family
ID=23690667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1586774A CH619303A5 (en, 2012) | 1973-12-19 | 1974-11-29 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3934057A (en, 2012) |
| JP (1) | JPS5319899B2 (en, 2012) |
| CA (1) | CA1035624A (en, 2012) |
| CH (1) | CH619303A5 (en, 2012) |
| DE (1) | DE2451902C3 (en, 2012) |
| ES (1) | ES433048A1 (en, 2012) |
| FR (1) | FR2254881B1 (en, 2012) |
| GB (1) | GB1473194A (en, 2012) |
| IT (1) | IT1025918B (en, 2012) |
| NL (1) | NL7416464A (en, 2012) |
| SE (1) | SE410997B (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3036710A1 (de) * | 1980-09-29 | 1982-05-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur erzeugung von photolackstrukuren |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3982943A (en) * | 1974-03-05 | 1976-09-28 | Ibm Corporation | Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask |
| JPS524834A (en) * | 1975-06-30 | 1977-01-14 | Agency Of Ind Science & Technol | Image formation method through electron beam and resisting agent compo sitions which are used for the methoi |
| US4024293A (en) * | 1975-12-10 | 1977-05-17 | International Business Machines Corporation | High sensitivity resist system for lift-off metallization |
| DE2636351C2 (de) * | 1976-08-12 | 1984-01-26 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen einer strukturierten Schicht auf einem Substrat |
| US4180604A (en) * | 1977-12-30 | 1979-12-25 | International Business Machines Corporation | Two layer resist system |
| US4204009A (en) * | 1977-12-30 | 1980-05-20 | International Business Machines Corporation | Two layer resist system |
| US4238559A (en) * | 1978-08-24 | 1980-12-09 | International Business Machines Corporation | Two layer resist system |
| DE3060510D1 (en) * | 1979-03-09 | 1982-07-29 | Thomson Csf | Photomasking substances, process for preparing them and mask obtained |
| US4349620A (en) * | 1979-06-15 | 1982-09-14 | E. I. Du Pont De Nemours And Company | Solvent developable photoresist film |
| US4229520A (en) * | 1979-06-18 | 1980-10-21 | E. I. Du Pont De Nemours And Company | Photo-polymerization and development process which produces dot-etchable material |
| US4339525A (en) * | 1979-06-18 | 1982-07-13 | E. I. Du Pont De Nemours And Company | Color proofing system using dot-etchable photopolymerizable elements |
| US4352870A (en) | 1979-11-27 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | High resolution two-layer resists |
| CA1155238A (en) * | 1979-11-27 | 1983-10-11 | Richard E. Howard | High resolution two-layer resists |
| DE3027941A1 (de) * | 1980-07-23 | 1982-02-25 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von reliefstrukturen aus doppellackschichten fuer integrierte halbleiterschaltungen, wobei zur strukturierung hochenergetische strahlung verwendet wird |
| US4415653A (en) * | 1981-05-07 | 1983-11-15 | Honeywell Inc. | Method of making sensitive positive electron beam resists |
| DE3127350C2 (de) * | 1981-07-10 | 1985-01-03 | Hans 8202 Bad Aibling Ribbert | Verfahren zur Bodenverfestigung |
| JPS59226346A (ja) * | 1983-06-07 | 1984-12-19 | Fuotopori Ouka Kk | プリント回路の製造方法 |
| DE3340154A1 (de) * | 1983-11-07 | 1985-05-15 | Basf Ag, 6700 Ludwigshafen | Verfahren zur herstellung von bildmaessig strukturierten resistschichten und fuer dieses verfahren geeigneter trockenfilmresist |
| US4539222A (en) * | 1983-11-30 | 1985-09-03 | International Business Machines Corporation | Process for forming metal patterns wherein metal is deposited on a thermally depolymerizable polymer and selectively removed |
| US4508812A (en) * | 1984-05-03 | 1985-04-02 | Hughes Aircraft Company | Method of applying poly(methacrylic anhydride resist to a semiconductor |
| US4519872A (en) * | 1984-06-11 | 1985-05-28 | International Business Machines Corporation | Use of depolymerizable polymers in the fabrication of lift-off structure for multilevel metal processes |
| US4737425A (en) * | 1986-06-10 | 1988-04-12 | International Business Machines Corporation | Patterned resist and process |
| EP0367762A1 (de) * | 1987-06-10 | 1990-05-16 | Siemens Aktiengesellschaft | Anordnung zur strukturierung durch fotolithografie und verfahren zu ihrer herstellung |
| US5006488A (en) * | 1989-10-06 | 1991-04-09 | International Business Machines Corporation | High temperature lift-off process |
| US5958630A (en) * | 1997-12-30 | 1999-09-28 | Kabushiki Kaisha Toshiba | Phase shifting mask and method of manufacturing the same |
| US5922509A (en) * | 1998-03-18 | 1999-07-13 | Morton International, Inc. | Photoimageable compositions having improved stripping properties in aqueous alkaline solutions |
| US20050164118A1 (en) * | 2002-01-31 | 2005-07-28 | Claus Barholm -Hansen | Method of joining a workpiece and a microstructure light exposure |
| US7384727B2 (en) * | 2003-06-26 | 2008-06-10 | Micron Technology, Inc. | Semiconductor processing patterning methods |
| US7026243B2 (en) * | 2003-10-20 | 2006-04-11 | Micron Technology, Inc. | Methods of forming conductive material silicides by reaction of metal with silicon |
| US6969677B2 (en) * | 2003-10-20 | 2005-11-29 | Micron Technology, Inc. | Methods of forming conductive metal silicides by reaction of metal with silicon |
| US7153769B2 (en) * | 2004-04-08 | 2006-12-26 | Micron Technology, Inc. | Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon |
| US7241705B2 (en) * | 2004-09-01 | 2007-07-10 | Micron Technology, Inc. | Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects |
| US7932615B2 (en) * | 2006-02-08 | 2011-04-26 | Amkor Technology, Inc. | Electronic devices including solder bumps on compliant dielectric layers |
| US7674701B2 (en) | 2006-02-08 | 2010-03-09 | Amkor Technology, Inc. | Methods of forming metal layers using multi-layer lift-off patterns |
| DE102006009696B4 (de) * | 2006-03-02 | 2008-04-30 | Forschungszentrum Jülich GmbH | Bauteil für die Nano- und Molekularelektronik |
| US20070134943A2 (en) * | 2006-04-02 | 2007-06-14 | Dunnrowicz Clarence J | Subtractive - Additive Edge Defined Lithography |
| DE102007006640A1 (de) | 2007-02-06 | 2008-08-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Aufbringen einer Struktur auf ein Halbleiterbauelement |
| ITTO20080358A1 (it) * | 2008-05-14 | 2009-11-15 | Consiglio Nazionale Ricerche | Procedimento e sistema per la fabbricazione di nanostrutture e nanodispositivi tramite proiezione di materiale in forma atomica o molecolare da sorgente sagomata attraverso un diaframma con aperture di dimensioni nanometriche |
| US9401336B2 (en) | 2014-11-04 | 2016-07-26 | International Business Machines Corporation | Dual layer stack for contact formation |
| EP3398202B1 (en) * | 2015-12-30 | 2023-08-09 | FujiFilm Electronic Materials USA, Inc. | Photosensitive stacked structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2964401A (en) * | 1957-02-18 | 1960-12-13 | Du Pont | Photopolymerizable elements and processes |
| GB841454A (en) * | 1957-09-16 | 1960-07-13 | Du Pont | Improvements in or relating to photopolymerisable elements |
| US3535137A (en) * | 1967-01-13 | 1970-10-20 | Ibm | Method of fabricating etch resistant masks |
| US3779806A (en) * | 1972-03-24 | 1973-12-18 | Ibm | Electron beam sensitive polymer t-butyl methacrylate resist |
| US3799777A (en) * | 1972-06-20 | 1974-03-26 | Westinghouse Electric Corp | Micro-miniature electronic components by double rejection |
-
1973
- 1973-12-19 US US05/426,403 patent/US3934057A/en not_active Expired - Lifetime
-
1974
- 1974-10-18 GB GB4532074A patent/GB1473194A/en not_active Expired
- 1974-10-22 FR FR7441884*A patent/FR2254881B1/fr not_active Expired
- 1974-10-31 DE DE2451902A patent/DE2451902C3/de not_active Expired
- 1974-11-13 CA CA213,549A patent/CA1035624A/en not_active Expired
- 1974-11-22 IT IT29717/74A patent/IT1025918B/it active
- 1974-11-29 CH CH1586774A patent/CH619303A5/de not_active IP Right Cessation
- 1974-12-03 JP JP13780174A patent/JPS5319899B2/ja not_active Expired
- 1974-12-10 SE SE7415451A patent/SE410997B/xx unknown
- 1974-12-17 NL NL7416464A patent/NL7416464A/xx not_active Application Discontinuation
- 1974-12-18 ES ES433048A patent/ES433048A1/es not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3036710A1 (de) * | 1980-09-29 | 1982-05-13 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur erzeugung von photolackstrukuren |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1035624A (en) | 1978-08-01 |
| DE2451902A1 (de) | 1975-07-03 |
| GB1473194A (en) | 1977-05-11 |
| ES433048A1 (es) | 1977-03-01 |
| IT1025918B (it) | 1978-08-30 |
| SE7415451L (en, 2012) | 1975-06-23 |
| DE2451902C3 (de) | 1982-05-06 |
| US3934057A (en) | 1976-01-20 |
| JPS5319899B2 (en, 2012) | 1978-06-23 |
| NL7416464A (nl) | 1975-06-23 |
| FR2254881A1 (en, 2012) | 1975-07-11 |
| DE2451902B2 (de) | 1981-07-16 |
| SE410997B (sv) | 1979-11-19 |
| FR2254881B1 (en, 2012) | 1976-10-22 |
| JPS5093570A (en, 2012) | 1975-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |