CH537985A - Verfahren zum Herstellen eines Hohlkörpers aus Halbleitermaterial - Google Patents

Verfahren zum Herstellen eines Hohlkörpers aus Halbleitermaterial

Info

Publication number
CH537985A
CH537985A CH1421770A CH1421770A CH537985A CH 537985 A CH537985 A CH 537985A CH 1421770 A CH1421770 A CH 1421770A CH 1421770 A CH1421770 A CH 1421770A CH 537985 A CH537985 A CH 537985A
Authority
CH
Switzerland
Prior art keywords
producing
semiconductor material
hollow body
hollow
semiconductor
Prior art date
Application number
CH1421770A
Other languages
German (de)
English (en)
Inventor
Konrad Dr Reuschel
Wolfgang Dr Dietze
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Priority to BR633371A priority Critical patent/BR7106333D0/pt
Publication of CH537985A publication Critical patent/CH537985A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1421770A 1970-04-06 1970-09-25 Verfahren zum Herstellen eines Hohlkörpers aus Halbleitermaterial CH537985A (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
BR633371A BR7106333D0 (pt) 1970-09-25 1971-09-24 Processo para preparacao de novos esteres organicos do fosforo e composicoes a base dos mesmos para controle de pragas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702016339 DE2016339C3 (de) 1970-04-06 1970-04-06 Verfahren zum Herstellen eines Hohlkörpers aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
CH537985A true CH537985A (de) 1973-06-15

Family

ID=5767232

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1421770A CH537985A (de) 1970-04-06 1970-09-25 Verfahren zum Herstellen eines Hohlkörpers aus Halbleitermaterial

Country Status (10)

Country Link
JP (1) JPS5121937B1 (ja)
AT (1) AT338874B (ja)
CA (1) CA942639A (ja)
CH (1) CH537985A (ja)
CS (1) CS172916B2 (ja)
DE (1) DE2016339C3 (ja)
FR (1) FR2092249A5 (ja)
GB (1) GB1320416A (ja)
NL (1) NL7014606A (ja)
SE (1) SE354975B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5331407A (en) * 1976-09-02 1978-03-24 Canon Kk Printer
US4491604A (en) * 1982-12-27 1985-01-01 Lesk Israel A Silicon deposition process
CN111647943A (zh) * 2012-06-29 2020-09-11 三菱综合材料株式会社 多晶硅棒

Also Published As

Publication number Publication date
SE354975B (ja) 1973-04-02
DE2016339B2 (de) 1979-04-19
AT338874B (de) 1977-09-26
FR2092249A5 (ja) 1971-01-21
JPS5121937B1 (ja) 1976-07-06
ATA869470A (de) 1977-01-15
CA942639A (en) 1974-02-26
CS172916B2 (ja) 1977-01-28
NL7014606A (ja) 1971-10-08
DE2016339A1 (de) 1971-10-21
DE2016339C3 (de) 1979-12-13
GB1320416A (en) 1973-06-13

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Legal Events

Date Code Title Description
PL Patent ceased