CH493094A - Dispositif semiconducteurs multicanaux à effet de champ - Google Patents
Dispositif semiconducteurs multicanaux à effet de champInfo
- Publication number
- CH493094A CH493094A CH881468A CH881468A CH493094A CH 493094 A CH493094 A CH 493094A CH 881468 A CH881468 A CH 881468A CH 881468 A CH881468 A CH 881468A CH 493094 A CH493094 A CH 493094A
- Authority
- CH
- Switzerland
- Prior art keywords
- grid
- wafer
- semiconductor device
- layer
- field effect
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 230000005669 field effect Effects 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 239000007787 solid Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 239000008188 pellet Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 75
- 238000009792 diffusion process Methods 0.000 description 34
- 239000000523 sample Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000012535 impurity Substances 0.000 description 11
- 239000010432 diamond Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000017105 transposition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/018—Compensation doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR110177A FR93111E (fr) | 1961-12-16 | 1967-06-13 | Perfectionnements aux dispositifs semiconducteurs dits tecnétrons multibatonnets. |
| FR124739A FR93763E (fr) | 1961-12-16 | 1967-10-17 | Perfectionnements aux dispositifs semiconducteurs dits tecnetrons multibatonnets. |
| FR130477A FR93857E (fr) | 1961-12-16 | 1967-11-30 | Perfectionnements aux dispositifs semi-conducteurs dits teenetrons multibatonnets. |
| FR144708A FR94388E (fr) | 1961-12-16 | 1968-03-21 | Perfectionnements aux dispositifs semiconducteurs dits tecnétrons multibatonnets. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH493094A true CH493094A (fr) | 1970-06-30 |
Family
ID=27444832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH881468A CH493094A (fr) | 1967-06-13 | 1968-06-13 | Dispositif semiconducteurs multicanaux à effet de champ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3497777A (en:Method) |
| BE (1) | BE716419A (en:Method) |
| CH (1) | CH493094A (en:Method) |
| DE (1) | DE1764491C3 (en:Method) |
| GB (1) | GB1161049A (en:Method) |
| NL (1) | NL6808325A (en:Method) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2263091A1 (de) * | 1971-12-27 | 1973-07-12 | Fujitsu Ltd | Feldeffekt-halbleitervorrichtung |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2147883B1 (en:Method) * | 1971-08-05 | 1977-01-28 | Teszner Stanislas | |
| IT981240B (it) * | 1972-03-10 | 1974-10-10 | Teszner S | Perfezionamenti ai gridistori per iperfrequenze |
| US4106044A (en) * | 1974-03-16 | 1978-08-08 | Nippon Gakki Seizo Kabushiki Kaisha | Field effect transistor having unsaturated characteristics |
| NL163898C (nl) * | 1974-03-16 | 1980-10-15 | Nippon Musical Instruments Mfg | Werkwijze voor het vervaardigen van een veldeffect- transistor met onverzadigde stroom-spanningskarakteri- stieken. |
| JPS51132779A (en) * | 1975-05-14 | 1976-11-18 | Hitachi Ltd | Production method of vertical-junction type field-effect transistor |
| US4171995A (en) * | 1975-10-20 | 1979-10-23 | Semiconductor Research Foundation | Epitaxial deposition process for producing an electrostatic induction type thyristor |
| JPS5299787A (en) * | 1976-02-18 | 1977-08-22 | Toshiba Corp | Junction type field effect transistor and its production |
| US4060821A (en) * | 1976-06-21 | 1977-11-29 | General Electric Co. | Field controlled thyristor with buried grid |
| US4378629A (en) * | 1979-08-10 | 1983-04-05 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor, fabrication method |
| US5032538A (en) * | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
| US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
| US4937644A (en) * | 1979-11-16 | 1990-06-26 | General Electric Company | Asymmetrical field controlled thyristor |
| US4670764A (en) * | 1984-06-08 | 1987-06-02 | Eaton Corporation | Multi-channel power JFET with buried field shaping regions |
| US4635084A (en) * | 1984-06-08 | 1987-01-06 | Eaton Corporation | Split row power JFET |
| CN1035294C (zh) * | 1993-10-29 | 1997-06-25 | 电子科技大学 | 具有异形掺杂岛的半导体器件耐压层 |
| US6461918B1 (en) * | 1999-12-20 | 2002-10-08 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
| US7745289B2 (en) * | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
| US6696726B1 (en) * | 2000-08-16 | 2004-02-24 | Fairchild Semiconductor Corporation | Vertical MOSFET with ultra-low resistance and low gate charge |
| US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
| US6677641B2 (en) | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
| US6710403B2 (en) * | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
| US6818513B2 (en) * | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
| US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
| US6803626B2 (en) | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
| US7345342B2 (en) * | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| FI120310B (fi) * | 2001-02-13 | 2009-09-15 | Valtion Teknillinen | Parannettu menetelmä erittyvien proteiinien tuottamiseksi sienissä |
| US7061066B2 (en) * | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
| KR100859701B1 (ko) * | 2002-02-23 | 2008-09-23 | 페어차일드코리아반도체 주식회사 | 고전압 수평형 디모스 트랜지스터 및 그 제조 방법 |
| US7033891B2 (en) * | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
| US7576388B1 (en) * | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
| US6710418B1 (en) | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
| US7652326B2 (en) | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| KR100994719B1 (ko) * | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | 슈퍼정션 반도체장치 |
| US7368777B2 (en) * | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
| US20050199918A1 (en) * | 2004-03-15 | 2005-09-15 | Daniel Calafut | Optimized trench power MOSFET with integrated schottky diode |
| US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
| US7265415B2 (en) * | 2004-10-08 | 2007-09-04 | Fairchild Semiconductor Corporation | MOS-gated transistor with reduced miller capacitance |
| CN101185169B (zh) * | 2005-04-06 | 2010-08-18 | 飞兆半导体公司 | 沟栅场效应晶体管及其形成方法 |
| US7385248B2 (en) | 2005-08-09 | 2008-06-10 | Fairchild Semiconductor Corporation | Shielded gate field effect transistor with improved inter-poly dielectric |
| US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
| US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
| US7944018B2 (en) * | 2006-08-14 | 2011-05-17 | Icemos Technology Ltd. | Semiconductor devices with sealed, unlined trenches and methods of forming same |
| US8580651B2 (en) * | 2007-04-23 | 2013-11-12 | Icemos Technology Ltd. | Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material |
| US7723172B2 (en) * | 2007-04-23 | 2010-05-25 | Icemos Technology Ltd. | Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material |
| US20080272429A1 (en) * | 2007-05-04 | 2008-11-06 | Icemos Technology Corporation | Superjunction devices having narrow surface layout of terminal structures and methods of manufacturing the devices |
| WO2009039441A1 (en) * | 2007-09-21 | 2009-03-26 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8012806B2 (en) * | 2007-09-28 | 2011-09-06 | Icemos Technology Ltd. | Multi-directional trenching of a die in manufacturing superjunction devices |
| US7772668B2 (en) * | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
| US8159039B2 (en) * | 2008-01-11 | 2012-04-17 | Icemos Technology Ltd. | Superjunction device having a dielectric termination and methods for manufacturing the device |
| US7795045B2 (en) * | 2008-02-13 | 2010-09-14 | Icemos Technology Ltd. | Trench depth monitor for semiconductor manufacturing |
| US7846821B2 (en) * | 2008-02-13 | 2010-12-07 | Icemos Technology Ltd. | Multi-angle rotation for ion implantation of trenches in superjunction devices |
| US20120273916A1 (en) | 2011-04-27 | 2012-11-01 | Yedinak Joseph A | Superjunction Structures for Power Devices and Methods of Manufacture |
| US8174067B2 (en) | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
| US8319290B2 (en) | 2010-06-18 | 2012-11-27 | Fairchild Semiconductor Corporation | Trench MOS barrier schottky rectifier with a planar surface using CMP techniques |
| US8786010B2 (en) | 2011-04-27 | 2014-07-22 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8673700B2 (en) | 2011-04-27 | 2014-03-18 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8772868B2 (en) | 2011-04-27 | 2014-07-08 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8946814B2 (en) | 2012-04-05 | 2015-02-03 | Icemos Technology Ltd. | Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3381187A (en) * | 1964-08-18 | 1968-04-30 | Hughes Aircraft Co | High-frequency field-effect triode device |
-
1968
- 1968-06-11 US US736233A patent/US3497777A/en not_active Expired - Lifetime
- 1968-06-12 GB GB27981/68A patent/GB1161049A/en not_active Expired
- 1968-06-12 BE BE716419D patent/BE716419A/xx unknown
- 1968-06-13 NL NL6808325A patent/NL6808325A/xx unknown
- 1968-06-13 CH CH881468A patent/CH493094A/fr not_active IP Right Cessation
- 1968-06-14 DE DE1764491A patent/DE1764491C3/de not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2263091A1 (de) * | 1971-12-27 | 1973-07-12 | Fujitsu Ltd | Feldeffekt-halbleitervorrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| US3497777A (en) | 1970-02-24 |
| DE1764491A1 (de) | 1974-05-30 |
| DE1764491C3 (de) | 1979-03-29 |
| GB1161049A (en) | 1969-08-13 |
| BE716419A (en:Method) | 1968-11-04 |
| DE1764491B2 (de) | 1978-07-27 |
| NL6808325A (en:Method) | 1968-12-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |