FR93857E - Perfectionnements aux dispositifs semi-conducteurs dits teenetrons multibatonnets. - Google Patents
Perfectionnements aux dispositifs semi-conducteurs dits teenetrons multibatonnets.Info
- Publication number
- FR93857E FR93857E FR130477A FR130477A FR93857E FR 93857 E FR93857 E FR 93857E FR 130477 A FR130477 A FR 130477A FR 130477 A FR130477 A FR 130477A FR 93857 E FR93857 E FR 93857E
- Authority
- FR
- France
- Prior art keywords
- teenetrons
- multibandon
- called
- semiconductor devices
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR130477A FR93857E (fr) | 1961-12-16 | 1967-11-30 | Perfectionnements aux dispositifs semi-conducteurs dits teenetrons multibatonnets. |
FR144708A FR94388E (fr) | 1961-12-16 | 1968-03-21 | Perfectionnements aux dispositifs semiconducteurs dits tecnétrons multibatonnets. |
US736233A US3497777A (en) | 1967-06-13 | 1968-06-11 | Multichannel field-effect semi-conductor device |
GB27981/68A GB1161049A (en) | 1967-06-13 | 1968-06-12 | Field-effect semiconductor devices. |
BE716419D BE716419A (fr) | 1967-06-13 | 1968-06-12 | |
NL6808325A NL6808325A (fr) | 1967-06-13 | 1968-06-13 | |
CH881468A CH493094A (fr) | 1967-06-13 | 1968-06-13 | Dispositif semiconducteurs multicanaux à effet de champ |
DE1764491A DE1764491C3 (de) | 1967-06-13 | 1968-06-14 | Mehrkanalfeldeffekthalbleitervorrichtung |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR882222A FR1317256A (fr) | 1961-12-16 | 1961-12-16 | Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets |
FR110177A FR93111E (fr) | 1961-12-16 | 1967-06-13 | Perfectionnements aux dispositifs semiconducteurs dits tecnétrons multibatonnets. |
FR124739A FR93763E (fr) | 1961-12-16 | 1967-10-17 | Perfectionnements aux dispositifs semiconducteurs dits tecnetrons multibatonnets. |
FR130477A FR93857E (fr) | 1961-12-16 | 1967-11-30 | Perfectionnements aux dispositifs semi-conducteurs dits teenetrons multibatonnets. |
Publications (1)
Publication Number | Publication Date |
---|---|
FR93857E true FR93857E (fr) | 1969-05-30 |
Family
ID=38861099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR130477A Expired FR93857E (fr) | 1961-12-16 | 1967-11-30 | Perfectionnements aux dispositifs semi-conducteurs dits teenetrons multibatonnets. |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR93857E (fr) |
-
1967
- 1967-11-30 FR FR130477A patent/FR93857E/fr not_active Expired
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name | ||
CL | Concession to grant licences | ||
CL | Concession to grant licences |