CH475367A - Verfahren zum Herstellen von dünnen Schichten aus texturlosem, polykristallinem Silicium - Google Patents
Verfahren zum Herstellen von dünnen Schichten aus texturlosem, polykristallinem SiliciumInfo
- Publication number
- CH475367A CH475367A CH1089365A CH1089365A CH475367A CH 475367 A CH475367 A CH 475367A CH 1089365 A CH1089365 A CH 1089365A CH 1089365 A CH1089365 A CH 1089365A CH 475367 A CH475367 A CH 475367A
- Authority
- CH
- Switzerland
- Prior art keywords
- textureless
- production
- polycrystalline silicon
- thin layers
- layers
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/20—Measures not previously mentioned for influencing the grain structure or texture; Selection of compositions therefor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3408—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/905—Plural dram cells share common contact or common trench
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- Y10T428/24364—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] with transparent or protective coating
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Treatment Of Steel In Its Molten State (AREA)
- Continuous Casting (AREA)
- Carbon And Carbon Compounds (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEST22494A DE1225823B (de) | 1964-08-04 | 1964-08-04 | Mittel zum Ankeimen von Stahl- und Metallschmelzen |
| DES0092455 | 1964-08-04 | ||
| BE667865A BE667865A (OSRAM) | 1964-08-04 | 1965-08-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH475367A true CH475367A (de) | 1969-07-15 |
Family
ID=27159097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1089365A CH475367A (de) | 1964-08-04 | 1965-08-03 | Verfahren zum Herstellen von dünnen Schichten aus texturlosem, polykristallinem Silicium |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3476640A (OSRAM) |
| AT (1) | AT256183B (OSRAM) |
| BE (2) | BE667865A (OSRAM) |
| CH (1) | CH475367A (OSRAM) |
| DE (2) | DE1225823B (OSRAM) |
| GB (1) | GB1073555A (OSRAM) |
| LU (1) | LU48880A1 (OSRAM) |
| NL (2) | NL6509980A (OSRAM) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3853974A (en) * | 1970-04-06 | 1974-12-10 | Siemens Ag | Method of producing a hollow body of semiconductor material |
| US3862020A (en) * | 1970-12-07 | 1975-01-21 | Dow Corning | Production method for polycrystalline semiconductor bodies |
| JPS5134263B2 (OSRAM) * | 1972-03-28 | 1976-09-25 | ||
| US3961003A (en) * | 1972-05-17 | 1976-06-01 | Dow Corning Corporation | Method and apparatus for making elongated Si and SiC structures |
| NL165134B (nl) * | 1974-04-24 | 1980-10-15 | Nippon Telegraph & Telephone | Werkwijze voor de vervaardiging van een staaf als tussenprodukt voor de vervaardiging van een optische vezel en werkwijze voor de vervaardiging van een optische vezel uit zulk een tussenprodukt. |
| US3951587A (en) * | 1974-12-06 | 1976-04-20 | Norton Company | Silicon carbide diffusion furnace components |
| DE2508802A1 (de) * | 1975-02-28 | 1976-09-09 | Siemens Ag | Verfahren zum abscheiden von elementarem silicium |
| DE2536174C3 (de) * | 1975-08-13 | 1983-11-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von polykristallinen Siliciumschichten für Halbleiterbauelemente |
| US4340636A (en) * | 1980-07-30 | 1982-07-20 | Avco Corporation | Coated stoichiometric silicon carbide |
| NL8103649A (nl) * | 1981-08-03 | 1983-03-01 | Philips Nv | Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting. |
| CS245569B1 (en) * | 1984-04-06 | 1986-10-16 | Oto Wichterle | Method of polymere gels casting from monomers' volatile mixtures in open moulds and equipment for application of this method |
| US4904901A (en) * | 1984-12-03 | 1990-02-27 | Lumel, Inc. | Electrolumescent panels |
| JPS61222702A (ja) * | 1985-03-28 | 1986-10-03 | 工業技術院長 | 複合材料用原料の製造方法 |
| US4705659A (en) * | 1985-04-01 | 1987-11-10 | Motorola, Inc. | Carbon film oxidation for free-standing film formation |
| JPH0729874B2 (ja) * | 1989-11-04 | 1995-04-05 | コマツ電子金属株式会社 | 多結晶シリコン製造装置の芯線間接続用ブリッジ |
| KR101375328B1 (ko) * | 2007-07-27 | 2014-03-19 | 삼성에스디아이 주식회사 | Ｓｉ／Ｃ 복합물, 이를 포함하는 음극활물질 및 리튬전지 |
| DE102012012088A1 (de) | 2012-06-18 | 2013-12-19 | Jean-Paul Theis | Verfahren zum Herstellen von Halbleiterdünnschichten auf Fremdsubstraten |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL244520A (OSRAM) * | 1958-10-23 |
-
0
- BE BE666629D patent/BE666629A/xx unknown
-
1964
- 1964-08-04 DE DEST22494A patent/DE1225823B/de active Pending
- 1964-08-04 DE DE1521465A patent/DE1521465C3/de not_active Expired
-
1965
- 1965-06-18 LU LU48880A patent/LU48880A1/xx unknown
- 1965-07-29 US US475663A patent/US3476640A/en not_active Expired - Lifetime
- 1965-08-02 NL NL6509980A patent/NL6509980A/xx unknown
- 1965-08-02 NL NL6510004A patent/NL6510004A/xx unknown
- 1965-08-03 GB GB33060/65A patent/GB1073555A/en not_active Expired
- 1965-08-03 AT AT717265A patent/AT256183B/de active
- 1965-08-03 CH CH1089365A patent/CH475367A/de not_active IP Right Cessation
- 1965-08-04 BE BE667865A patent/BE667865A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1073555A (en) | 1967-06-28 |
| DE1225823B (de) | 1966-09-29 |
| DE1521465A1 (de) | 1969-07-31 |
| LU48880A1 (OSRAM) | 1965-08-18 |
| DE1521465B2 (de) | 1973-07-12 |
| NL6509980A (OSRAM) | 1966-02-07 |
| BE667865A (OSRAM) | 1966-02-04 |
| NL6510004A (OSRAM) | 1966-02-07 |
| BE666629A (OSRAM) | |
| AT256183B (de) | 1967-08-10 |
| DE1521465C3 (de) | 1974-02-14 |
| US3476640A (en) | 1969-11-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |