LU48880A1 - - Google Patents
Info
- Publication number
- LU48880A1 LU48880A1 LU48880A LU48880A LU48880A1 LU 48880 A1 LU48880 A1 LU 48880A1 LU 48880 A LU48880 A LU 48880A LU 48880 A LU48880 A LU 48880A LU 48880 A1 LU48880 A1 LU 48880A1
- Authority
- LU
- Luxembourg
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/20—Measures not previously mentioned for influencing the grain structure or texture; Selection of compositions therefor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/905—Plural dram cells share common contact or common trench
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- Y10T428/24364—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] with transparent or protective coating
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEST22494A DE1225823B (de) | 1964-08-04 | 1964-08-04 | Mittel zum Ankeimen von Stahl- und Metallschmelzen |
DES0092455 | 1964-08-04 | ||
BE667865A BE667865A (xx) | 1964-08-04 | 1965-08-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
LU48880A1 true LU48880A1 (xx) | 1965-08-18 |
Family
ID=27159097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
LU48880A LU48880A1 (xx) | 1964-08-04 | 1965-06-18 |
Country Status (8)
Country | Link |
---|---|
US (1) | US3476640A (xx) |
AT (1) | AT256183B (xx) |
BE (2) | BE667865A (xx) |
CH (1) | CH475367A (xx) |
DE (2) | DE1521465C3 (xx) |
GB (1) | GB1073555A (xx) |
LU (1) | LU48880A1 (xx) |
NL (2) | NL6510004A (xx) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3853974A (en) * | 1970-04-06 | 1974-12-10 | Siemens Ag | Method of producing a hollow body of semiconductor material |
US3862020A (en) * | 1970-12-07 | 1975-01-21 | Dow Corning | Production method for polycrystalline semiconductor bodies |
JPS5134263B2 (xx) * | 1972-03-28 | 1976-09-25 | ||
US3961003A (en) * | 1972-05-17 | 1976-06-01 | Dow Corning Corporation | Method and apparatus for making elongated Si and SiC structures |
NL165134B (nl) * | 1974-04-24 | 1980-10-15 | Nippon Telegraph & Telephone | Werkwijze voor de vervaardiging van een staaf als tussenprodukt voor de vervaardiging van een optische vezel en werkwijze voor de vervaardiging van een optische vezel uit zulk een tussenprodukt. |
US3951587A (en) * | 1974-12-06 | 1976-04-20 | Norton Company | Silicon carbide diffusion furnace components |
DE2508802A1 (de) * | 1975-02-28 | 1976-09-09 | Siemens Ag | Verfahren zum abscheiden von elementarem silicium |
DE2536174C3 (de) * | 1975-08-13 | 1983-11-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von polykristallinen Siliciumschichten für Halbleiterbauelemente |
US4340636A (en) * | 1980-07-30 | 1982-07-20 | Avco Corporation | Coated stoichiometric silicon carbide |
NL8103649A (nl) * | 1981-08-03 | 1983-03-01 | Philips Nv | Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting. |
CS245569B1 (en) * | 1984-04-06 | 1986-10-16 | Oto Wichterle | Method of polymere gels casting from monomers' volatile mixtures in open moulds and equipment for application of this method |
US4904901A (en) * | 1984-12-03 | 1990-02-27 | Lumel, Inc. | Electrolumescent panels |
JPS61222702A (ja) * | 1985-03-28 | 1986-10-03 | 工業技術院長 | 複合材料用原料の製造方法 |
US4705659A (en) * | 1985-04-01 | 1987-11-10 | Motorola, Inc. | Carbon film oxidation for free-standing film formation |
JPH0729874B2 (ja) * | 1989-11-04 | 1995-04-05 | コマツ電子金属株式会社 | 多結晶シリコン製造装置の芯線間接続用ブリッジ |
KR101375328B1 (ko) * | 2007-07-27 | 2014-03-19 | 삼성에스디아이 주식회사 | Si/C 복합물, 이를 포함하는 음극활물질 및 리튬전지 |
DE102012012088A1 (de) | 2012-06-18 | 2013-12-19 | Jean-Paul Theis | Verfahren zum Herstellen von Halbleiterdünnschichten auf Fremdsubstraten |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL244520A (xx) * | 1958-10-23 |
-
0
- BE BE666629D patent/BE666629A/xx unknown
-
1964
- 1964-08-04 DE DE1521465A patent/DE1521465C3/de not_active Expired
- 1964-08-04 DE DEST22494A patent/DE1225823B/de active Pending
-
1965
- 1965-06-18 LU LU48880A patent/LU48880A1/xx unknown
- 1965-07-29 US US475663A patent/US3476640A/en not_active Expired - Lifetime
- 1965-08-02 NL NL6510004A patent/NL6510004A/xx unknown
- 1965-08-02 NL NL6509980A patent/NL6509980A/xx unknown
- 1965-08-03 CH CH1089365A patent/CH475367A/de not_active IP Right Cessation
- 1965-08-03 AT AT717265A patent/AT256183B/de active
- 1965-08-03 GB GB33060/65A patent/GB1073555A/en not_active Expired
- 1965-08-04 BE BE667865A patent/BE667865A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB1073555A (en) | 1967-06-28 |
NL6510004A (xx) | 1966-02-07 |
DE1521465C3 (de) | 1974-02-14 |
BE666629A (xx) | |
DE1521465A1 (de) | 1969-07-31 |
CH475367A (de) | 1969-07-15 |
DE1521465B2 (de) | 1973-07-12 |
US3476640A (en) | 1969-11-04 |
AT256183B (de) | 1967-08-10 |
DE1225823B (de) | 1966-09-29 |
NL6509980A (xx) | 1966-02-07 |
BE667865A (xx) | 1966-02-04 |