CH414572A - Verfahren zum Herstellen eines halbleitenden Elements - Google Patents

Verfahren zum Herstellen eines halbleitenden Elements

Info

Publication number
CH414572A
CH414572A CH1159961A CH1159961A CH414572A CH 414572 A CH414572 A CH 414572A CH 1159961 A CH1159961 A CH 1159961A CH 1159961 A CH1159961 A CH 1159961A CH 414572 A CH414572 A CH 414572A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconducting element
semiconducting
Prior art date
Application number
CH1159961A
Other languages
German (de)
English (en)
Inventor
Heim Max
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH414572A publication Critical patent/CH414572A/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/62—Heating elements specially adapted for furnaces
    • H05B3/64—Heating elements specially adapted for furnaces using ribbon, rod, or wire heater
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
CH1159961A 1960-11-30 1961-10-06 Verfahren zum Herstellen eines halbleitenden Elements CH414572A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES71471A DE1281396B (de) 1960-11-30 1960-11-30 Vorrichtung zum Herstellen von kristallinem Halbleitermaterial

Publications (1)

Publication Number Publication Date
CH414572A true CH414572A (de) 1966-06-15

Family

ID=7502494

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1159961A CH414572A (de) 1960-11-30 1961-10-06 Verfahren zum Herstellen eines halbleitenden Elements

Country Status (7)

Country Link
US (1) US3240623A (es)
BE (1) BE610917A (es)
CH (1) CH414572A (es)
DE (1) DE1281396B (es)
GB (1) GB949649A (es)
NL (1) NL271345A (es)
SE (1) SE301632B (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1262244B (de) * 1964-12-23 1968-03-07 Siemens Ag Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial
DE1297086B (de) * 1965-01-29 1969-06-12 Siemens Ag Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial
DE1287047B (de) * 1965-02-18 1969-01-16 Siemens Ag Verfahren und Vorrichtung zum Abscheiden einer einkristallinen Halbleiterschicht
US3438810A (en) * 1966-04-04 1969-04-15 Motorola Inc Method of making silicon
US3540986A (en) * 1967-05-15 1970-11-17 Louis Joseph Guarino Distillation condensation apparatus with vapor compression and semipermeable membrane
US3649339A (en) * 1969-09-05 1972-03-14 Eugene C Smith Apparatus and method for securing a high vacuum for particle coating process
US3641973A (en) * 1970-11-25 1972-02-15 Air Reduction Vacuum coating apparatus
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2196767A (en) * 1937-07-10 1940-04-09 Eastman Kodak Co Pyrolysis apparatus
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
US3140922A (en) * 1957-03-07 1964-07-14 Int Standard Electric Corp Methods and apparatus for treating reactive materials
US3010797A (en) * 1957-07-26 1961-11-28 Robert S Aries High purity elemental silicon
BE571013A (es) * 1957-09-07
US3128154A (en) * 1958-12-19 1964-04-07 Eagle Picher Co Process for producing crystalline silicon over a substrate and removal therefrom
US2986451A (en) * 1959-04-30 1961-05-30 Mallinckrodt Chemical Works Method of preparing elemental silicon
NL251143A (es) * 1959-05-04
US3063871A (en) * 1959-10-23 1962-11-13 Merck & Co Inc Production of semiconductor films

Also Published As

Publication number Publication date
DE1281396B (de) 1968-10-24
NL271345A (es)
SE301632B (es) 1968-06-17
GB949649A (en) 1964-02-19
BE610917A (fr) 1962-03-16
US3240623A (en) 1966-03-15

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