SE301632B - - Google Patents
Info
- Publication number
- SE301632B SE301632B SE11910/61A SE1191061A SE301632B SE 301632 B SE301632 B SE 301632B SE 11910/61 A SE11910/61 A SE 11910/61A SE 1191061 A SE1191061 A SE 1191061A SE 301632 B SE301632 B SE 301632B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/62—Heating elements specially adapted for furnaces
- H05B3/64—Heating elements specially adapted for furnaces using ribbon, rod, or wire heater
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES71471A DE1281396B (de) | 1960-11-30 | 1960-11-30 | Vorrichtung zum Herstellen von kristallinem Halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE301632B true SE301632B (es) | 1968-06-17 |
Family
ID=7502494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE11910/61A SE301632B (es) | 1960-11-30 | 1961-11-29 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3240623A (es) |
| BE (1) | BE610917A (es) |
| CH (1) | CH414572A (es) |
| DE (1) | DE1281396B (es) |
| GB (1) | GB949649A (es) |
| NL (1) | NL271345A (es) |
| SE (1) | SE301632B (es) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1262244B (de) * | 1964-12-23 | 1968-03-07 | Siemens Ag | Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial |
| DE1297086B (de) * | 1965-01-29 | 1969-06-12 | Siemens Ag | Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial |
| DE1287047B (de) * | 1965-02-18 | 1969-01-16 | Siemens Ag | Verfahren und Vorrichtung zum Abscheiden einer einkristallinen Halbleiterschicht |
| US3438810A (en) * | 1966-04-04 | 1969-04-15 | Motorola Inc | Method of making silicon |
| US3540986A (en) * | 1967-05-15 | 1970-11-17 | Louis Joseph Guarino | Distillation condensation apparatus with vapor compression and semipermeable membrane |
| US3649339A (en) * | 1969-09-05 | 1972-03-14 | Eugene C Smith | Apparatus and method for securing a high vacuum for particle coating process |
| US3641973A (en) * | 1970-11-25 | 1972-02-15 | Air Reduction | Vacuum coating apparatus |
| US4173944A (en) * | 1977-05-20 | 1979-11-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Silverplated vapor deposition chamber |
| US4179530A (en) * | 1977-05-20 | 1979-12-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the deposition of pure semiconductor material |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2196767A (en) * | 1937-07-10 | 1940-04-09 | Eastman Kodak Co | Pyrolysis apparatus |
| US3011877A (en) * | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
| US3140922A (en) * | 1957-03-07 | 1964-07-14 | Int Standard Electric Corp | Methods and apparatus for treating reactive materials |
| US3010797A (en) * | 1957-07-26 | 1961-11-28 | Robert S Aries | High purity elemental silicon |
| BE571013A (es) * | 1957-09-07 | |||
| US3128154A (en) * | 1958-12-19 | 1964-04-07 | Eagle Picher Co | Process for producing crystalline silicon over a substrate and removal therefrom |
| US2986451A (en) * | 1959-04-30 | 1961-05-30 | Mallinckrodt Chemical Works | Method of preparing elemental silicon |
| NL251143A (es) * | 1959-05-04 | |||
| US3063871A (en) * | 1959-10-23 | 1962-11-13 | Merck & Co Inc | Production of semiconductor films |
-
0
- NL NL271345D patent/NL271345A/xx unknown
-
1960
- 1960-11-30 DE DES71471A patent/DE1281396B/de active Pending
-
1961
- 1961-10-06 CH CH1159961A patent/CH414572A/de unknown
- 1961-11-27 US US155030A patent/US3240623A/en not_active Expired - Lifetime
- 1961-11-28 GB GB42491/61A patent/GB949649A/en not_active Expired
- 1961-11-29 BE BE610917A patent/BE610917A/fr unknown
- 1961-11-29 SE SE11910/61A patent/SE301632B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1281396B (de) | 1968-10-24 |
| NL271345A (es) | |
| CH414572A (de) | 1966-06-15 |
| GB949649A (en) | 1964-02-19 |
| BE610917A (fr) | 1962-03-16 |
| US3240623A (en) | 1966-03-15 |