GB949649A - Improvements in or relating to methods and apparatus for forming semi-conductor materials - Google Patents
Improvements in or relating to methods and apparatus for forming semi-conductor materialsInfo
- Publication number
- GB949649A GB949649A GB42491/61A GB4249161A GB949649A GB 949649 A GB949649 A GB 949649A GB 42491/61 A GB42491/61 A GB 42491/61A GB 4249161 A GB4249161 A GB 4249161A GB 949649 A GB949649 A GB 949649A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rods
- vessel
- pict
- semi
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/62—Heating elements specially adapted for furnaces
- H05B3/64—Heating elements specially adapted for furnaces using ribbon, rod, or wire heater
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
In the formation of semi-conductor materials by passing a gaseous compound of the semiconductor material over a heated body of the same semi-conductor material to deposit semiconductor material, e.g. silicon, on the body, the semi-conductor body, e.g. a silicon body, is placed in a reaction vessel which is then filled with a gas, e.g. hydrogen, and the silicon body is heated to an intermediate temperature by a heating element situated at a first position inside the vessel. The body is then heated from this intermediate temperature to the decomposition temperature of the gaseous compound of the semi-conductor material, e.g. silicon chloroform, to be passed over the body, by means of electrical currents flowing in the body. The heating element is moved to a second position outside the vessel and then the gaseous silicon chloroform is passed over the body to deposit silicon on to the body. In Figs. 1, 2 and 3, a reaction vessel having a cover 21 is situated above a vessel 17, the dividing wall between the vessels consisting of an outer ring 12 and an inner movable plate 13 which is mounted on a shaft 14. Mounted on ring 12 is a plurality of silicon bodies in the form of rods 11 and 111, adjacent rods being connected together by a piece of semi-conductor material, see Fig. 8, in which piece 23 is the connector. The lower surface of the movable plate 13 carries a plurality of heater elements 16 and 161 and <PICT:0949649/C1/1> <PICT:0949649/C1/2> <PICT:0949649/C1/3> <PICT:0949649/C1/4> <PICT:0949649/C1/5> <PICT:0949649/C1/6> on its upper surface is a plurality of further silicon rods 15 and 151. At the beginning of the process cover 21 and plate 13 are moved from the Fig. 1 positions to the Fig. 2 positions, hydrogen is passed into the two vessels and current is applied to heater elements 16 and 161 to heat rods 11 and 111. Plate 13 is then lowered to the Fig. 3 position and a direct current is applied to rods 11 and 111 and heat radiated and conducted from 11 and 111 heats rods 15 and 151 to the intermediate temperature after which they are also heated to the decomposition temperature by direct current. Silicon chloroform is then passed over rods 11, 111, 15 and 151 under such conditions that the silicon deposited is in the monocrystalline form. In Fig. 4, the dividing wall 41 between the two vessels contains a plurality of holes through which a plurality of heater elements 16 and 161 may be lowered to heat rods 11, 111, 15 and 151 in vessel 46. In Fig. 7, a plurality of silicon rods 61 to 65 in a vessel 71 are arranged in concentric rings and a plurality of heater elements 51 in a vessel 72 are raised up through elements 51 in a vessel 72 are raised up through holes in the dividing wall between the two vessels.ALSO:Pure germanium is produced by thermal decomposition of a gaseous germanium compound, e.g. a germanium halogenide, in a reaction vessel containing a germanium body and a gas by first heating the germanium body to an intermediate temperature by means of a heater element situated inside the reaction vessel and then heating the body, by passing an electrical current therethrough, from this intermediate temperature to the decomposition temperature of the gaseous germanium compound and then passing the said gaseous compound over the body to deposit germanium on the body, the heater element being moved out of the reaction vessel before decomposition commences. Semi-conductor materials other than germanium can be prepared by this method. In Figs. 1, 2 and 3, a reaction vessel having a cover 21 is situated above a vessel 17, the dividing wall between the vessels consisting of an outer ring 12 and an inner movable plate 13 mounted on shaft 14. Mounted on ring 12 is a plurality of semi-conductor bodies in the form of rods 11 and 111, adjacent rods being connected together by a piece of semi-conductor material, see Fig. 8 in which 23 is the connector. The lower surface of movable plate 13 carries a plurality of heater elements 16 and 161 and on its upper surfaces a plurality of further semi-conductor rods 15 and 151. At the beginning of the process cover 21 and plate 13 are moved from the Fig. 1 positions to the Fig. 2 positions, hydrogen is passed into the two vessels and current is applied to heater elements 16 and 161 to heat rods 11 and 111. Plate 13 is then lowered to the Fig. 3 position and direct current is applied to rods 11 and 111 and heat radiated and conducted from these rods heats <PICT:0949649/C3/1> <PICT:0949649/C3/2> <PICT:0949649/C3/3> <PICT:0949649/C3/4> <PICT:0949649/C3/5> <PICT:0949649/C3/6> rods 15 and 151 to the intermediate temperature after which they are also heated by direct current. A gaseous compound containing the semi-conductor material, e.g. a gaseous germanium compound, is passed over rods 11, 111, 15 and 151 to deposit the material on the rods. In Fig. 4, the dividing wall 41 between the two vessels contains a plurality of holes through which a plurality of heater elements 16 and 161 may be lowered to heat rods 11, 111, 15 and 151 in vessel 46 and in Fig. 7 the rods of semi-conductor material are arranged in concentric rings in vessel 71 and a plurality of heater elements 51 in vessel 72 are raised up through holes in the dividing wall of the two vessels.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES71471A DE1281396B (en) | 1960-11-30 | 1960-11-30 | Apparatus for producing crystalline semiconductor material |
Publications (1)
Publication Number | Publication Date |
---|---|
GB949649A true GB949649A (en) | 1964-02-19 |
Family
ID=7502494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB42491/61A Expired GB949649A (en) | 1960-11-30 | 1961-11-28 | Improvements in or relating to methods and apparatus for forming semi-conductor materials |
Country Status (7)
Country | Link |
---|---|
US (1) | US3240623A (en) |
BE (1) | BE610917A (en) |
CH (1) | CH414572A (en) |
DE (1) | DE1281396B (en) |
GB (1) | GB949649A (en) |
NL (1) | NL271345A (en) |
SE (1) | SE301632B (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1262244B (en) * | 1964-12-23 | 1968-03-07 | Siemens Ag | Process for the epitaxial deposition of a crystalline layer, in particular made of semiconductor material |
DE1297086B (en) * | 1965-01-29 | 1969-06-12 | Siemens Ag | Process for producing a layer of single crystal semiconductor material |
DE1287047B (en) * | 1965-02-18 | 1969-01-16 | Siemens Ag | Method and device for depositing a monocrystalline semiconductor layer |
US3438810A (en) * | 1966-04-04 | 1969-04-15 | Motorola Inc | Method of making silicon |
US3540986A (en) * | 1967-05-15 | 1970-11-17 | Louis Joseph Guarino | Distillation condensation apparatus with vapor compression and semipermeable membrane |
US3649339A (en) * | 1969-09-05 | 1972-03-14 | Eugene C Smith | Apparatus and method for securing a high vacuum for particle coating process |
US3641973A (en) * | 1970-11-25 | 1972-02-15 | Air Reduction | Vacuum coating apparatus |
US4173944A (en) * | 1977-05-20 | 1979-11-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Silverplated vapor deposition chamber |
US4179530A (en) * | 1977-05-20 | 1979-12-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the deposition of pure semiconductor material |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2196767A (en) * | 1937-07-10 | 1940-04-09 | Eastman Kodak Co | Pyrolysis apparatus |
US3011877A (en) * | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
US3140922A (en) * | 1957-03-07 | 1964-07-14 | Int Standard Electric Corp | Methods and apparatus for treating reactive materials |
US3010797A (en) * | 1957-07-26 | 1961-11-28 | Robert S Aries | High purity elemental silicon |
NL113918C (en) * | 1957-09-07 | |||
US3128154A (en) * | 1958-12-19 | 1964-04-07 | Eagle Picher Co | Process for producing crystalline silicon over a substrate and removal therefrom |
US2986451A (en) * | 1959-04-30 | 1961-05-30 | Mallinckrodt Chemical Works | Method of preparing elemental silicon |
NL251143A (en) * | 1959-05-04 | |||
US3063871A (en) * | 1959-10-23 | 1962-11-13 | Merck & Co Inc | Production of semiconductor films |
-
0
- NL NL271345D patent/NL271345A/xx unknown
-
1960
- 1960-11-30 DE DES71471A patent/DE1281396B/en active Pending
-
1961
- 1961-10-06 CH CH1159961A patent/CH414572A/en unknown
- 1961-11-27 US US155030A patent/US3240623A/en not_active Expired - Lifetime
- 1961-11-28 GB GB42491/61A patent/GB949649A/en not_active Expired
- 1961-11-29 SE SE11910/61A patent/SE301632B/xx unknown
- 1961-11-29 BE BE610917A patent/BE610917A/en unknown
Also Published As
Publication number | Publication date |
---|---|
US3240623A (en) | 1966-03-15 |
SE301632B (en) | 1968-06-17 |
DE1281396B (en) | 1968-10-24 |
NL271345A (en) | |
BE610917A (en) | 1962-03-16 |
CH414572A (en) | 1966-06-15 |
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