GB1085050A - Process for the production of layers of the two-component superconducting intermetallic compounds vanadium-gallium or niobium-gallium - Google Patents

Process for the production of layers of the two-component superconducting intermetallic compounds vanadium-gallium or niobium-gallium

Info

Publication number
GB1085050A
GB1085050A GB37599/66A GB3759966A GB1085050A GB 1085050 A GB1085050 A GB 1085050A GB 37599/66 A GB37599/66 A GB 37599/66A GB 3759966 A GB3759966 A GB 3759966A GB 1085050 A GB1085050 A GB 1085050A
Authority
GB
United Kingdom
Prior art keywords
support
heating
gallium
alkyl compound
niobium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB37599/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1085050A publication Critical patent/GB1085050A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/28Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0184Manufacture or treatment of devices comprising intermetallic compounds of type A-15, e.g. Nb3Sn

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A V3Ga or Nb3Ga superconducting intermetallic compound is produced on a support of V or Nb by bringing a gaseous Ga alkyl compound into contact with the support and heating it to the decomposition temperature, e.g. 200-500 DEG C. for 1/2 -1 minute under a vacuum of 1-10-2mm Hg, to deposit a Ga layer, and then heating the support e.g. for 1 to 10 minutes under vacuum or in a protective gas e.g. A or He to diffuse the Ga into the support and react therewith. The heating may be effected at 900-1200 DEG C. for V and 1200-1500 DEG C. for Nb. The alkyl compound may be Ga triethyl, triisobutyl, tri-n-hexyl or Ga diethyl hydride. The support may be in the form of wire, ribbon, plate or cylinder, and may be heated inside a quartz reaction tube by resistance, radiation or induction heating.ALSO:A V3Ga or Nb3Ga superconducting intermetallic compound is produced on a support of V or Nb by bringing a gaseous Ga alkyl compound into contact with the support and heating it to the decomposition temperature, e.g. 200-500 DEG C. for 1/2 -1 minute under a vacuum of 1-10-2 mm. Hg, to deposit a Ga layer, and then heating the support, e.g. for 1 to 10 minutes under vacuum or in a protective gas, e.g. A or He to diffuse the Ga into the support and react therewith. The heating may be effected at 900-1200 DEG C. for V and 1200-1500 DEG C. for Nb. The alkyl compound may be Ga triethyl, triisobutyl, tri-n-hexyl or Ga diethyl hydride. The support may be in the form of wire, ribbon, plate or cylinder, and may be heated inside a quartz reaction tube by resistance, radiation or induction heating.
GB37599/66A 1965-08-21 1966-08-22 Process for the production of layers of the two-component superconducting intermetallic compounds vanadium-gallium or niobium-gallium Expired GB1085050A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0098971 1965-08-21

Publications (1)

Publication Number Publication Date
GB1085050A true GB1085050A (en) 1967-09-27

Family

ID=7521876

Family Applications (1)

Application Number Title Priority Date Filing Date
GB37599/66A Expired GB1085050A (en) 1965-08-21 1966-08-22 Process for the production of layers of the two-component superconducting intermetallic compounds vanadium-gallium or niobium-gallium

Country Status (4)

Country Link
AT (1) AT264246B (en)
CH (1) CH465081A (en)
GB (1) GB1085050A (en)
NL (1) NL6611724A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3731374A (en) * 1971-07-20 1973-05-08 Atomic Energy Commission Method of fabricating a hard intermetallic superconductor by means of diffusion
GB2177119A (en) * 1985-06-26 1987-01-14 Plessey Co Plc Metal-organic chemical vapour deposition
WO2002086188A1 (en) * 2001-04-20 2002-10-31 N.V. Bekaert S.A. Apparatus and method for the deposition of metal or metal oxide coatings on an elongated substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4272355A (en) * 1980-02-26 1981-06-09 International Business Machines Corporation Process of bonding sputtering targets to target electrodes

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3731374A (en) * 1971-07-20 1973-05-08 Atomic Energy Commission Method of fabricating a hard intermetallic superconductor by means of diffusion
GB2177119A (en) * 1985-06-26 1987-01-14 Plessey Co Plc Metal-organic chemical vapour deposition
GB2177119B (en) * 1985-06-26 1989-04-26 Plessey Co Plc Organometallic chemical vapour deposition
WO2002086188A1 (en) * 2001-04-20 2002-10-31 N.V. Bekaert S.A. Apparatus and method for the deposition of metal or metal oxide coatings on an elongated substrate

Also Published As

Publication number Publication date
NL6611724A (en) 1967-02-22
CH465081A (en) 1968-11-15
AT264246B (en) 1968-08-26

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