DE1281396B - Apparatus for producing crystalline semiconductor material - Google Patents

Description

FEDERAL REPUBLIC OF GERMANY

GERMAN

PATENT OFFICE

EDITORIAL

Int. α .:

German class:

Number:
File number:
Registration date:
Display day:

BOId;

B Ol j; C 01b;
C 23 c

12c-2

12 g-17/32; 12i-33/02;

48b-11/00

P 12 81 396.6-43 (S 71471)

November 30, 1960

October 31, 1968

For a method of preheating molds for the deposition of high-resistance semiconductor materials from gaseous compounds of the semiconductor material to initially preheated and Molded bodies made of metal or quartz, which are heated by direct current passage, have already been proposed to bring a heating device directly to the moldings in the separation space and then remove them again after they have been preheated. Such a procedure is permitted under including the use of reaction vessels with walls made of metal for the production of high-purity semiconductor material by deposition from the gas phase.

The present invention relates to a technically particularly advantageous embodiment a device suitable for carrying out the proposed method. This device for the production of crystalline semiconductor material, in particular silicon, by thermal decomposition a gaseous compound of the semiconductor material and depositing the semiconductor material on several preheated and then heated by direct current passage, in a reaction vessel arranged, rod-shaped carriers made of the same semiconductor material, with for the purpose of Preheating of the rod-shaped carrier serving, arranged in their vicinity heating elements, which after can be removed from the vicinity of the rod-shaped carrier after preheating has taken place, is characterized according to the invention characterized in that the heating elements fastened on a holder by a protective gas filled, against the reaction vessel tightly closable vessel arranged in the vicinity of the carrier and that the kettle is attached to the reaction vessel by one on the supports Seal is sealable.

According to the prior art, preheating is used to reduce the specific resistance of the carrier, which consists of high-purity and therefore high-resistance semiconductor material, only carried out by an infrared heater arranged outside a reaction vessel made of quartz.

In the device, the heat is transferred not only by radiation, but also by Thermal conduction, so that the carrier to the temperature necessary for a good conduction of electricity in a can be heated up in a much shorter time. In addition, the reaction vessel can be made as large as desired since it is no longer necessary, a quartz vessel that can only be used up to a diameter of

Apparatus for producing crystalline
Semiconductor material

Applicant:

Siemens Aktiengesellschaft, Berlin and Munich, 8000 Munich 2, Wittelsbacherplatz 2

Named as inventor:
Max Heim, 8000 Munich

180 mm can be produced, but also the use of a metal vessel that cools is possible. Thus, in the method according to the invention, the semiconductor material on a very large number of carriers (approx. 100) can be deposited at the same time. So there can be large quantities can be obtained from high-purity semiconductor material in one operation. It has also been shown that the economic efficiency of the process increases with the number of carriers, since there is then a lot per carrier less electricity is needed and also a better efficiency of the yield of the supplied Reaction gas is achieved.

A more detailed explanation of the invention is given below with reference to a few particularly favorable exemplary embodiments given.

In Fig. 1 a device according to the invention is shown. Be on a support ring 12 first of all the rod-shaped supports, two of which (11 and 11 ') are shown in the figure, to a small extent Spaced next to each other and one below the other by a bridge of the same Material connected. This is in FIG. 8 shown for two carriers 81 and 82 arranged next to one another, the bridge, which consists of the same semiconductor material as the carrier, is denoted by 23.

The bottom 13 sealing the lower part of the reaction vessel tightly runs in a guide 14 and has on its underside likewise arranged in a ring shape, in the present case designed as rods Heating elements, two of which are shown in FIG. 1 and denoted by 16 and 16 '. That Heating element can also, for. B. formed by heating coils built into a metal pipe.

809 629/1427

Claims (1)

3 4 If necessary, two concentric rings 43 and 44, i.e. on con- 13, as shown in FIG. 1 is shown, also arranged in centric circles next to one another. To the further annular and concentric to the outer preheating of the carrier is the plate 24 with the Carrier bodies arranged on supports, of which two heating elements 16, 16 'attached to them are lowered, see above 15 and 15 ', are shown. 5 that the heating rods between the two carrier During the deposition, the heating rows 63 and 64 are immersed and both are concentric elements in a boiler 17, which is arranged with the support ring 12 carrier rows at the same time on the for is connected gas-tight. A good power line necessary temperature between the support ring 12 and the bottom 13, both of which are not heated with one. Provided cooling device are provided, there is an io in FIG. 5 shows part of a facility, Seal 18 so that during the deposition a hermetic seal around the reaction hermetic Completion of the reaction space to the vessel is ensured by boiler 17 connected to the heating elements. To illustrate closure elements. Several After inserting the carrier or the heating rods, 51 elements are attached to form a parallel bundle 15 is summarized in the support ring 12 or the base 13 and fastened in the retaining ring 52. Of the the water-cooled resilient cone 53 provided with cooling coils 22 is elastic on a rod 66 hood 21 is lowered and the interior of the hood is stored and locked when the retaining ring is lowered 21 with a protective gas, e.g. B. hydrogen filled. 52 the conical bores in the plate 54, which This as well as the one for the feed line of the reac- contains the holder 55 for the carrier, of which tion gas and for the discharge of the residual gases not- ao two (56 and 56 ') in F i g. 5 are shown, Manoeuvrable gas inlets and outlets are available. F i g. Figures 6 and 7 show a five inch device Not shown in the figures for reasons of visibility. rows of concentric rings At the beginning of the process, the guide 14 is inserted into the semiconductor rods. The retaining ring 52 is shown in FIG. 6 hochin the F i g. 2 position shown moved. The driven, the heating rods 51 heat the rows of Boiler 17 is advantageously with the same gas as rods 63 and 64. After igniting these rods is filled, which is also in the actual reaction vessel of the support ring 52 according to FIG. 7 lowered and the is located. The row of heating rods is then tightly sealed. The reaction chamber is sealed after the in on the rows of the outer, z. B. made of silicon. 5 arrangement shown. To entry standing carrier. Now the heating rods that come with air or another gas during the abin the figure to prevent power supply lines 30 lowering the heating rods and accidentally are heated up. Due to the heating obstruction of the air inlet in the event of a leak in the If the heat is emitted, the carrier is expediently a kettle 72 by means of a cone lock 53 Thermal radiation and, since the gas filling is provided, the one in which the guide 73 also heats highly conductive gas, e.g. B. hydrogen is compressed. is turned, also heated by conduction. 35 By heat transfer to the inner rows The beams are also not the bars 61 and 62 and the outer row 65 in the figures provided power supply lines with all supports on the necessary for a good power line are connected to a voltage source. When the agile temperature is heated. Now the reaction Such a gas mixture is introduced into the reaction chamber 71 through the stream flowing through the carrier. To the Value has reached that he is able to measure the temperature of the wearer during the wearer 40 alone, d. H. without additional heating by the precipitation are on the water-cooled bell Radiators to keep heating up, the heating 74 observation windows 75 are attached, bars switched off and the bottom 13 in the guide. The claimed device can also be used to manufacture 14 lowered so that the reaction space position of other semiconductor material, for. B. from 32 is hermetically separated from the boiler 17, as in 45 germanium can be used with advantage. the F i g. 3 is shown. If there are carriers on the top then they consist of germanium and that too of the bottom 13 further ring-shaped and concentrically decomposing gas mixture from a gaseous mixture to the outer carriers arranged carrier body, binding of germanium, in particular one in this way, through heat transfer, these also become germanium halide inside, which is thermally on the supports lying, also annularly arranged carrier 50 is decomposed, conductive and glow with the same temperature as
the outer bars. Now, in a known manner, the claim to be decomposed: gaseous semiconductor compound, e.g. B. silicon chloroform, introduced and on the heated supports 55 device for the production of crystalline with the formation of the semiconductor material, so z. B. under semiconductor material, especially silicon, Formation of silicon, decomposed, the radial and thermal decomposition of a gaseous one special monocrystalline on the silicon compound of the semiconductor material and Niederden Porters grows up. hitting the semiconductor material on several In F i g. 4 is another device according to FIG. 60 preheated and then by direct current invention shown. In this case, the lower kettle is heated in a reaction vessel not necessary. The annularly arranged heating rods arranged, rod-shaped supports from the are again hanging down on a plate 24 of the same semiconductor material, with for the purpose of assembled. The hood 21 carries a massive sheath preheating of the rod-shaped carrier serving, wall 41, in the raised state by 65 arranged in their vicinity heating elements, the a seal on the heating rods a hermetic one after preheating from the vicinity of the rod closure of the reaction space 46 are removable from the upper space-shaped carrier, thereby 47 takes place. The supports are marked on the base plate 42 in that those on a holder (13) attached heating elements (16, 16 ') from a filled with protective gas, against the reaction vessel (22) tightly closable vessel (17) arranged in the vicinity of the carrier (11, 11 ') so as to be displaceable are and that the boiler (17) against the reaction vessel (22) by one on the supports (11,11 ') attached bar. Seal (18) sealing Older patents considered: German Patent No. 1102 117; German Patent No. 1 215 112. 1 sheet of drawings 809 629/1427 10. GS © Bundesdruckerei Berlin