CH365804A - Halbleitervorrichtung mit mindestens einem Übergang zwischen Zonen verschiedenen Leitfähigkeitstyps - Google Patents

Halbleitervorrichtung mit mindestens einem Übergang zwischen Zonen verschiedenen Leitfähigkeitstyps

Info

Publication number
CH365804A
CH365804A CH6203858A CH6203858A CH365804A CH 365804 A CH365804 A CH 365804A CH 6203858 A CH6203858 A CH 6203858A CH 6203858 A CH6203858 A CH 6203858A CH 365804 A CH365804 A CH 365804A
Authority
CH
Switzerland
Prior art keywords
zones
junction
semiconductor device
conductivity types
different conductivity
Prior art date
Application number
CH6203858A
Other languages
German (de)
English (en)
Inventor
Tisso Starr Arthur
Original Assignee
Standard Telephon & Radio Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB25388/57A external-priority patent/GB815699A/en
Application filed by Standard Telephon & Radio Ag filed Critical Standard Telephon & Radio Ag
Priority claimed from GB12744/59A external-priority patent/GB870599A/en
Publication of CH365804A publication Critical patent/CH365804A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
CH6203858A 1957-08-12 1958-07-22 Halbleitervorrichtung mit mindestens einem Übergang zwischen Zonen verschiedenen Leitfähigkeitstyps CH365804A (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB25388/57A GB815699A (en) 1959-05-29 1957-08-12 Improvements in or relating to semi-conductor devices and methods of manufacture thereof
GB12744/59A GB870599A (en) 1959-04-15 1959-04-15 Improvements in or relating to semi-conductor crystal rectifiers and methods of manufacture thereof
GB18357/59A GB874349A (en) 1957-08-12 1959-05-29 Improvements in or relating to semiconductor devices
FR824364A FR77527E (fr) 1957-08-12 1960-04-14 Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci

Publications (1)

Publication Number Publication Date
CH365804A true CH365804A (de) 1962-11-30

Family

ID=62527908

Family Applications (1)

Application Number Title Priority Date Filing Date
CH6203858A CH365804A (de) 1957-08-12 1958-07-22 Halbleitervorrichtung mit mindestens einem Übergang zwischen Zonen verschiedenen Leitfähigkeitstyps

Country Status (4)

Country Link
BE (1) BE570279A (fa)
CH (1) CH365804A (fa)
FR (2) FR1212132A (fa)
GB (1) GB874349A (fa)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475660A (en) * 1967-12-01 1969-10-28 Int Rectifier Corp Hollow cylindrical semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1225304B (de) * 1961-11-16 1966-09-22 Telefunken Patent Diffusionsverfahren zum Herstellen eines Halbleiterbauelementes
BE635672A (fa) * 1962-07-31

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475660A (en) * 1967-12-01 1969-10-28 Int Rectifier Corp Hollow cylindrical semiconductor device

Also Published As

Publication number Publication date
BE570279A (fa) 1900-01-01
GB874349A (en) 1961-08-02
FR1212132A (fr) 1960-03-22
FR77527E (fr) 1962-03-16

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