CA2946526A1 - Boitier hermetiquement clos a couche de reduction des contraintes - Google Patents

Boitier hermetiquement clos a couche de reduction des contraintes Download PDF

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Publication number
CA2946526A1
CA2946526A1 CA2946526A CA2946526A CA2946526A1 CA 2946526 A1 CA2946526 A1 CA 2946526A1 CA 2946526 A CA2946526 A CA 2946526A CA 2946526 A CA2946526 A CA 2946526A CA 2946526 A1 CA2946526 A1 CA 2946526A1
Authority
CA
Canada
Prior art keywords
bonding material
substrate
layer
stress relief
metal ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2946526A
Other languages
English (en)
Other versions
CA2946526C (fr
Inventor
Adam M. Kennedy
Buu Q. Diep
Stephen H. Black
Tse E. Wong
Thomas Allan KOCIAN
Gregory D. Tracy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of CA2946526A1 publication Critical patent/CA2946526A1/fr
Application granted granted Critical
Publication of CA2946526C publication Critical patent/CA2946526C/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0051—Packages or encapsulation for reducing stress inside of the package structure between the package lid and the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0207—Bolometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/035—Soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
CA2946526A 2014-08-11 2014-08-11 Boitier hermetiquement clos a couche de reduction des contraintes Active CA2946526C (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/050589 WO2016024946A1 (fr) 2014-08-11 2014-08-11 Boîtier hermétiquement clos à couche de réduction des contraintes

Publications (2)

Publication Number Publication Date
CA2946526A1 true CA2946526A1 (fr) 2016-02-18
CA2946526C CA2946526C (fr) 2021-03-23

Family

ID=51398909

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2946526A Active CA2946526C (fr) 2014-08-11 2014-08-11 Boitier hermetiquement clos a couche de reduction des contraintes

Country Status (7)

Country Link
EP (1) EP3180288A1 (fr)
JP (1) JP6487032B2 (fr)
KR (1) KR101931010B1 (fr)
CN (1) CN106414309B (fr)
CA (1) CA2946526C (fr)
IL (2) IL248686B (fr)
WO (1) WO2016024946A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10734320B2 (en) 2018-07-30 2020-08-04 Infineon Technologies Austria Ag Power metallization structure for semiconductor devices
DE102016122318A1 (de) 2016-11-21 2018-05-24 Infineon Technologies Ag Anschlussstruktur eines Leistungshalbleiterbauelements
DE102017118899B4 (de) 2016-12-15 2020-06-18 Taiwan Semiconductor Manufacturing Co. Ltd. Dichtungsringstrukturen und Verfahren zu ihrer Herstellung
US10453832B2 (en) 2016-12-15 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structures and methods of forming same
FR3061549B1 (fr) * 2016-12-30 2020-10-02 Commissariat Energie Atomique Detecteur de rayonnement electromagnetique et notamment de rayonnement infrarouge et procede pour sa realisation
US10163974B2 (en) 2017-05-17 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming absorption enhancement structure for image sensor
US10438980B2 (en) 2017-05-31 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with a high absorption layer
US10559563B2 (en) 2017-06-26 2020-02-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing monolithic three-dimensional (3D) integrated circuits
US10304782B2 (en) * 2017-08-25 2019-05-28 Infineon Technologies Ag Compressive interlayer having a defined crack-stop edge extension
US11127693B2 (en) 2017-08-25 2021-09-21 Infineon Technologies Ag Barrier for power metallization in semiconductor devices
KR102040593B1 (ko) * 2018-02-14 2019-11-06 주식회사 오킨스전자 접합 특성이 향상된 필터 칩 패키지와 웨이퍼 레벨 패키지 및 그 제조 방법
JP7283476B2 (ja) * 2018-07-10 2023-05-30 日本電気硝子株式会社 パッケージ、パッケージ製造方法、接合材付き蓋体、および接合材付き蓋体の製造方法
US11031321B2 (en) 2019-03-15 2021-06-08 Infineon Technologies Ag Semiconductor device having a die pad with a dam-like configuration
CN110265521B (zh) * 2019-04-29 2020-10-27 华灿光电(苏州）有限公司 倒装发光二极管芯片及其制作方法
KR102328922B1 (ko) * 2019-05-27 2021-11-22 주식회사 아이디피 솔더볼을 이용한 캡 웨이퍼의 웨이퍼레벨 패키징 방법 및 캡 웨이퍼
EP4020541A4 (fr) * 2019-08-20 2022-10-12 Mitsubishi Electric Corporation Boîtier de semi-conducteur
CN110577186A (zh) * 2019-09-12 2019-12-17 南通大学 一种mems红外探测器三维封装结构及其制作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69009958T2 (de) * 1989-12-19 1994-09-22 Fujitsu Ltd Adhäsionsstruktur für Halbleiterbauelement und Verfahren zu ihrer Herstellung.
JP2788672B2 (ja) * 1989-12-19 1998-08-20 富士通株式会社 半導体装置
JPH06140527A (ja) * 1992-10-28 1994-05-20 Sumitomo Electric Ind Ltd 半導体用封止装置部品
US5701008A (en) 1996-11-29 1997-12-23 He Holdings, Inc. Integrated infrared microlens and gas molecule getter grating in a vacuum package
JPH11307688A (ja) * 1998-04-17 1999-11-05 Ngk Spark Plug Co Ltd 配線基板及びその製造方法
US6521477B1 (en) 2000-02-02 2003-02-18 Raytheon Company Vacuum package fabrication of integrated circuit components
US6342407B1 (en) * 2000-12-07 2002-01-29 International Business Machines Corporation Low stress hermetic seal
EP1571704A1 (fr) * 2004-03-04 2005-09-07 Interuniversitair Microelektronica Centrum Vzw Méthode pour déposer un matériau de soudure sur un substrat en forme de motif prédéterminé
JP2009200093A (ja) * 2008-02-19 2009-09-03 Murata Mfg Co Ltd 中空型の電子部品
WO2010021267A1 (fr) * 2008-08-21 2010-02-25 株式会社村田製作所 Composant électronique et son procédé de fabrication
US7948178B2 (en) * 2009-03-04 2011-05-24 Global Oled Technology Llc Hermetic seal
US8809784B2 (en) * 2010-10-21 2014-08-19 Raytheon Company Incident radiation detector packaging
JP5716627B2 (ja) * 2011-10-06 2015-05-13 オムロン株式会社 ウエハの接合方法及び接合部の構造

Also Published As

Publication number Publication date
IL248686A0 (en) 2017-01-31
IL276281B (en) 2021-05-31
CA2946526C (fr) 2021-03-23
WO2016024946A1 (fr) 2016-02-18
JP2017527113A (ja) 2017-09-14
CN106414309A (zh) 2017-02-15
CN106414309B (zh) 2020-02-28
KR101931010B1 (ko) 2018-12-19
IL276281A (en) 2020-09-30
KR20160146879A (ko) 2016-12-21
JP6487032B2 (ja) 2019-03-20
IL248686B (en) 2020-09-30
EP3180288A1 (fr) 2017-06-21

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Effective date: 20190405