CA2627880A1 - Dispositifs optiques comprenant des couches a semi-conducteurs texturees - Google Patents
Dispositifs optiques comprenant des couches a semi-conducteurs texturees Download PDFInfo
- Publication number
- CA2627880A1 CA2627880A1 CA002627880A CA2627880A CA2627880A1 CA 2627880 A1 CA2627880 A1 CA 2627880A1 CA 002627880 A CA002627880 A CA 002627880A CA 2627880 A CA2627880 A CA 2627880A CA 2627880 A1 CA2627880 A1 CA 2627880A1
- Authority
- CA
- Canada
- Prior art keywords
- textured
- layer
- semiconductor device
- gan
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 137
- 230000003287 optical effect Effects 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 238000005401 electroluminescence Methods 0.000 claims abstract description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 226
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 223
- 238000000034 method Methods 0.000 claims description 73
- 230000004888 barrier function Effects 0.000 claims description 47
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 45
- 229910052594 sapphire Inorganic materials 0.000 claims description 34
- 239000010980 sapphire Substances 0.000 claims description 34
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 32
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 20
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 17
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000001194 electroluminescence spectrum Methods 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 238000005286 illumination Methods 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000000608 laser ablation Methods 0.000 claims description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000000295 emission spectrum Methods 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 238000000605 extraction Methods 0.000 abstract description 38
- 239000002243 precursor Substances 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 278
- 230000012010 growth Effects 0.000 description 91
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 51
- 238000005424 photoluminescence Methods 0.000 description 50
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 37
- 150000004767 nitrides Chemical class 0.000 description 28
- 238000001228 spectrum Methods 0.000 description 26
- 239000010408 film Substances 0.000 description 23
- 238000004020 luminiscence type Methods 0.000 description 23
- 230000005701 quantum confined stark effect Effects 0.000 description 23
- 238000000103 photoluminescence spectrum Methods 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 20
- 238000004458 analytical method Methods 0.000 description 19
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 17
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 16
- 238000005136 cathodoluminescence Methods 0.000 description 16
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 16
- 229910052757 nitrogen Inorganic materials 0.000 description 16
- 230000010287 polarization Effects 0.000 description 16
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 14
- 230000000694 effects Effects 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000000523 sample Substances 0.000 description 13
- 238000002310 reflectometry Methods 0.000 description 12
- 230000002269 spontaneous effect Effects 0.000 description 12
- 238000013459 approach Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 210000004027 cell Anatomy 0.000 description 10
- 238000005137 deposition process Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 210000002381 plasma Anatomy 0.000 description 8
- 238000012512 characterization method Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 230000006872 improvement Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 230000004807 localization Effects 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000010076 replication Effects 0.000 description 4
- 230000003362 replicative effect Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000000089 atomic force micrograph Methods 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000005428 wave function Effects 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 nitride compounds Chemical class 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 239000013598 vector Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241001442234 Cosa Species 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 235000008529 Ziziphus vulgaris Nutrition 0.000 description 1
- 244000126002 Ziziphus vulgaris Species 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- AKVPCIASSWRYTN-UHFFFAOYSA-N zinc oxygen(2-) silicon(4+) Chemical compound [Si+4].[O-2].[Zn+2].[O-2].[O-2] AKVPCIASSWRYTN-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73203405P | 2005-10-31 | 2005-10-31 | |
| US60/732,034 | 2005-10-31 | ||
| PCT/US2006/042483 WO2007053624A2 (fr) | 2005-10-31 | 2006-10-31 | Dispositifs optiques comprenant des couches a semi-conducteurs texturees |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2627880A1 true CA2627880A1 (fr) | 2007-05-10 |
Family
ID=38006465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002627880A Abandoned CA2627880A1 (fr) | 2005-10-31 | 2006-10-31 | Dispositifs optiques comprenant des couches a semi-conducteurs texturees |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1952449A4 (fr) |
| JP (1) | JP2009515340A (fr) |
| CN (1) | CN101506937A (fr) |
| CA (1) | CA2627880A1 (fr) |
| WO (1) | WO2007053624A2 (fr) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8652948B2 (en) * | 2007-11-21 | 2014-02-18 | Mitsubishi Chemical Corporation | Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element |
| KR20100097205A (ko) * | 2007-12-10 | 2010-09-02 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 단순화된 광 추출을 갖는 하향-변환된 발광 다이오드 |
| US8492737B2 (en) | 2010-11-18 | 2013-07-23 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Tunable infrared emitter |
| TW201436263A (zh) * | 2013-01-25 | 2014-09-16 | Corsam Technologies Llc | 光伏雙重紋理化玻璃 |
| CN103280504A (zh) * | 2013-05-14 | 2013-09-04 | 西安神光皓瑞光电科技有限公司 | 一种用于提高发光器件效率的方法 |
| CN104253179A (zh) * | 2013-06-28 | 2014-12-31 | 晶能光电（江西）有限公司 | 一种GaN基LED外延片的制备方法 |
| CN103413876A (zh) * | 2013-08-09 | 2013-11-27 | 西安神光皓瑞光电科技有限公司 | 一种发光器件及其制备方法 |
| JP6434878B2 (ja) * | 2015-09-10 | 2018-12-05 | 株式会社東芝 | 発光装置 |
| JP6846913B2 (ja) * | 2016-11-11 | 2021-03-24 | 日本碍子株式会社 | 広波長域発光素子および広波長域発光素子の作製方法 |
| FR3068484B1 (fr) * | 2017-06-29 | 2019-11-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Projecteur couleur a deux ecrans emissifs. |
| WO2021102666A1 (fr) * | 2019-11-26 | 2021-06-03 | 重庆康佳光电技术研究院有限公司 | Structure de diode électroluminescente |
| CN113140618B (zh) * | 2021-03-31 | 2023-02-10 | 福建中晶科技有限公司 | 一种蓝宝石复合衬底及其制备方法 |
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| JP3424465B2 (ja) * | 1996-11-15 | 2003-07-07 | 日亜化学工業株式会社 | 窒化物半導体素子及び窒化物半導体の成長方法 |
| JP3282174B2 (ja) * | 1997-01-29 | 2002-05-13 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
| CN1292458C (zh) * | 1997-04-11 | 2006-12-27 | 日亚化学工业株式会社 | 氮化物半导体的生长方法、氮化物半导体衬底及器件 |
| US6294440B1 (en) * | 1998-04-10 | 2001-09-25 | Sharp Kabushiki Kaisha | Semiconductor substrate, light-emitting device, and method for producing the same |
| US6218280B1 (en) * | 1998-06-18 | 2001-04-17 | University Of Florida | Method and apparatus for producing group-III nitrides |
| US6252261B1 (en) * | 1998-09-30 | 2001-06-26 | Nec Corporation | GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor |
| JP3511923B2 (ja) * | 1998-12-25 | 2004-03-29 | 日亜化学工業株式会社 | 発光素子 |
| JP3619053B2 (ja) * | 1999-05-21 | 2005-02-09 | キヤノン株式会社 | 光電変換装置の製造方法 |
| JP4145437B2 (ja) * | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板 |
| JP3725382B2 (ja) * | 1999-11-11 | 2005-12-07 | 株式会社東芝 | 半導体素子の製造方法および半導体発光素子の製造方法 |
| JP4197814B2 (ja) * | 1999-11-12 | 2008-12-17 | シャープ株式会社 | Ｌｅｄ駆動方法およびｌｅｄ装置と表示装置 |
| JP4055503B2 (ja) * | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP4158519B2 (ja) * | 2002-12-26 | 2008-10-01 | 住友電気工業株式会社 | 白色発光素子およびその製造方法 |
| WO2004068182A2 (fr) * | 2003-01-24 | 2004-08-12 | Digital Optics International Corporation | Systeme d'eclairage haute densite |
| JP2005093682A (ja) * | 2003-09-17 | 2005-04-07 | Toyoda Gosei Co Ltd | ＧａＮ系半導体発光素子及びその製造方法 |
| US7348600B2 (en) * | 2003-10-20 | 2008-03-25 | Nichia Corporation | Nitride semiconductor device, and its fabrication process |
| JP2007533164A (ja) * | 2004-04-15 | 2007-11-15 | トラスティーズ オブ ボストン ユニバーシティ | テクスチャ出しされた半導体層を特徴とする光学装置 |
-
2006
- 2006-10-31 EP EP06827176A patent/EP1952449A4/fr not_active Withdrawn
- 2006-10-31 CA CA002627880A patent/CA2627880A1/fr not_active Abandoned
- 2006-10-31 WO PCT/US2006/042483 patent/WO2007053624A2/fr active Application Filing
- 2006-10-31 CN CNA2006800496104A patent/CN101506937A/zh active Pending
- 2006-10-31 JP JP2008538970A patent/JP2009515340A/ja active Pending
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| Publication number | Publication date |
|---|---|
| WO2007053624A2 (fr) | 2007-05-10 |
| WO2007053624A3 (fr) | 2009-04-30 |
| EP1952449A2 (fr) | 2008-08-06 |
| CN101506937A (zh) | 2009-08-12 |
| JP2009515340A (ja) | 2009-04-09 |
| EP1952449A4 (fr) | 2011-06-29 |
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