CA2620623C - Inducteur integre variable - Google Patents
Inducteur integre variable Download PDFInfo
- Publication number
- CA2620623C CA2620623C CA2620623A CA2620623A CA2620623C CA 2620623 C CA2620623 C CA 2620623C CA 2620623 A CA2620623 A CA 2620623A CA 2620623 A CA2620623 A CA 2620623A CA 2620623 C CA2620623 C CA 2620623C
- Authority
- CA
- Canada
- Prior art keywords
- inductor
- secondary inductors
- pair
- primary inductor
- loop primary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000008859 change Effects 0.000 claims abstract description 13
- 238000004891 communication Methods 0.000 claims abstract description 6
- 230000008878 coupling Effects 0.000 claims description 21
- 238000010168 coupling process Methods 0.000 claims description 21
- 238000005859 coupling reaction Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 claims description 16
- 230000007423 decrease Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 23
- 230000008901 benefit Effects 0.000 description 9
- 230000001939 inductive effect Effects 0.000 description 9
- 239000002184 metal Substances 0.000 description 5
- 230000009977 dual effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F21/00—Variable inductances or transformers of the signal type
- H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F21/00—Variable inductances or transformers of the signal type
- H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
- H01F2021/125—Printed variable inductor with taps, e.g. for VCO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Networks Using Active Elements (AREA)
- Coils Or Transformers For Communication (AREA)
- Transceivers (AREA)
- Filters And Equalizers (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
L'invention porte sur un inducteur intégré variable qui possède une valeur d'inductance pouvant être commutée entre au moins deux valeurs. Dans un mode de réalisation préféré, l'inducteur intégré variable de l'invention comprend un inducteur primaire à plusieurs boucles qui est couplé par électromagnétisme à une paire d'inducteurs secondaires. Les inducteurs secondaires sont reliés entre eux afin de former un circuit fermé dans lequel les inducteurs secondaires possèdent une topologie modifiable que l'on peut commuter entre une connexion en série et une connexion en parallèle afin de modifier la valeur d'inductance sortie par l'inducteur primaire à plusieurs boucles. Dans une application, l'inducteur intégré variable est utilisé dans un oscillateur commandé en tension ("voltage controlled oscillator" ou VCO) du type qui peut être utilisé dans un émetteur-récepteur radio RF multibandes (p.ex., un dispositif de communication sans fil). Dans d'autres applications, l'inducteur intégré variable peut être utilisé dans une charge d'amplificateur syntonisée, un réseau d'accord d'impédance, un oscillateur commandé numériquement ou un quelconque autre type de réseau LC sélectif.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/214,076 | 2005-08-29 | ||
US11/214,076 US7432794B2 (en) | 2004-08-16 | 2005-08-29 | Variable integrated inductor |
PCT/EP2006/065437 WO2007025875A1 (fr) | 2005-08-29 | 2006-08-18 | Inducteur integre variable |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2620623A1 CA2620623A1 (fr) | 2007-03-08 |
CA2620623C true CA2620623C (fr) | 2015-02-17 |
Family
ID=37400885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA2620623A Active CA2620623C (fr) | 2005-08-29 | 2006-08-18 | Inducteur integre variable |
Country Status (15)
Country | Link |
---|---|
US (1) | US7432794B2 (fr) |
EP (1) | EP1929486B1 (fr) |
JP (1) | JP5154419B2 (fr) |
KR (1) | KR101256697B1 (fr) |
CN (1) | CN101253585B (fr) |
AT (1) | ATE430371T1 (fr) |
BR (1) | BRPI0615402B1 (fr) |
CA (1) | CA2620623C (fr) |
DE (1) | DE602006006584D1 (fr) |
HK (1) | HK1120654A1 (fr) |
MY (1) | MY140388A (fr) |
PL (1) | PL1929486T3 (fr) |
RU (1) | RU2416132C2 (fr) |
TW (1) | TWI431927B (fr) |
WO (1) | WO2007025875A1 (fr) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006120735A (ja) * | 2004-10-19 | 2006-05-11 | Matsushita Electric Ind Co Ltd | インダクタ装置 |
KR100579136B1 (ko) * | 2004-12-16 | 2006-05-12 | 한국전자통신연구원 | 가변 인덕턴스를 갖는 트랜스포머 |
FI20055402A0 (fi) * | 2005-07-11 | 2005-07-11 | Nokia Corp | Induktorilaite monikaistaista radiotaajuista toimintaa varten |
US8044756B2 (en) * | 2006-07-07 | 2011-10-25 | St-Ericsson Sa | Programmable inductor |
DE102006035204B4 (de) * | 2006-07-29 | 2009-10-15 | Atmel Duisburg Gmbh | Monolithisch integrierbare Schaltungsanordnung |
CN101188159B (zh) * | 2006-11-24 | 2011-01-12 | 阎跃军 | 分段可调电感器 |
US8237531B2 (en) * | 2007-12-31 | 2012-08-07 | Globalfoundries Singapore Pte. Ltd. | Tunable high quality factor inductor |
US8018312B2 (en) * | 2008-02-12 | 2011-09-13 | International Business Machines Corporation | Inductor and method of operating an inductor by combining primary and secondary coils with coupling structures |
GB2462885B (en) * | 2008-08-29 | 2013-03-27 | Cambridge Silicon Radio Ltd | Inductor structure |
EP2273613A1 (fr) * | 2009-07-07 | 2011-01-12 | Nxp B.V. | Disposition de bouclier magnétique, dispositif semi-conducteur et application |
EP2293309A1 (fr) * | 2009-09-08 | 2011-03-09 | STmicroelectronics SA | Dispositif inductif intégré. |
KR20120088692A (ko) * | 2009-09-29 | 2012-08-08 | 텔레호낙티에볼라게트 엘엠 에릭슨(피유비엘) | 통신 네트워크에서 사용하기 위한 발진기, 주파수 합성기 및 네트워크 노드 |
GB0918221D0 (en) | 2009-10-16 | 2009-12-02 | Cambridge Silicon Radio Ltd | Inductor structure |
EP2564403B1 (fr) | 2010-04-30 | 2016-09-21 | Powermat Technologies Ltd. | Système et procédé pour le transfert inductif d'énergie sur une zone étendue |
EP2421011A1 (fr) * | 2010-08-19 | 2012-02-22 | Nxp B.V. | Inducteur symétrique |
US8963674B2 (en) * | 2010-12-20 | 2015-02-24 | Mediatek Singapore Pte. Ltd. | Tunable inductor |
WO2012095850A1 (fr) * | 2011-01-10 | 2012-07-19 | Powermat Technologies Ltd. | Système de transfert d'énergie de manière inductive à des éléments à l'intérieur d'un contenant |
US20120244802A1 (en) * | 2011-03-24 | 2012-09-27 | Lei Feng | On chip inductor |
WO2013043334A1 (fr) * | 2011-09-23 | 2013-03-28 | Rambus Inc. | Circuits électroniques utilisant différents inducteurs couplés |
US8576039B2 (en) * | 2011-12-06 | 2013-11-05 | Cambridge Silicon Radio Limited | Inductor structure |
EP2648193B1 (fr) | 2012-04-03 | 2015-07-29 | Telefonaktiebolaget L M Ericsson (publ) | Disposition d'inducteur et système à oscillateur commandé par la tension (VCO) |
US9608577B2 (en) * | 2012-09-23 | 2017-03-28 | Dsp Group Ltd. | Radio frequency front end module circuit incorporating an efficient high linearity power amplifier |
WO2014078455A1 (fr) * | 2012-11-13 | 2014-05-22 | Spectra7 Microsystems Ltd | Procédé et système d'amélioration de gamme dynamique de signal pour systèmes de communication à duplexage par répartition fréquentielle |
KR101351855B1 (ko) | 2012-12-03 | 2014-01-22 | 주식회사 피에스텍 | 고전력용 가변 인덕터와 이를 사용한 필터 |
US8860521B2 (en) * | 2012-12-19 | 2014-10-14 | Intel IP Corporation | Variable inductor for LC oscillator |
US10115661B2 (en) | 2013-02-08 | 2018-10-30 | Qualcomm Incorporated | Substrate-less discrete coupled inductor structure |
US9899133B2 (en) | 2013-08-01 | 2018-02-20 | Qorvo Us, Inc. | Advanced 3D inductor structures with confined magnetic field |
US9685928B2 (en) | 2013-08-01 | 2017-06-20 | Qorvo Us, Inc. | Interference rejection RF filters |
US9825656B2 (en) | 2013-08-01 | 2017-11-21 | Qorvo Us, Inc. | Weakly coupled tunable RF transmitter architecture |
US9628045B2 (en) | 2013-08-01 | 2017-04-18 | Qorvo Us, Inc. | Cooperative tunable RF filters |
WO2014145633A1 (fr) | 2013-03-15 | 2014-09-18 | Rf Micro Devices, Inc. | Filtre de réjection harmonique basé sur un couple faible pour amplificateur de puissance de linéarisation par rétroaction |
US9755671B2 (en) | 2013-08-01 | 2017-09-05 | Qorvo Us, Inc. | VSWR detector for a tunable filter structure |
US9705478B2 (en) | 2013-08-01 | 2017-07-11 | Qorvo Us, Inc. | Weakly coupled tunable RF receiver architecture |
US9859863B2 (en) | 2013-03-15 | 2018-01-02 | Qorvo Us, Inc. | RF filter structure for antenna diversity and beam forming |
US9780756B2 (en) | 2013-08-01 | 2017-10-03 | Qorvo Us, Inc. | Calibration for a tunable RF filter structure |
US9444417B2 (en) | 2013-03-15 | 2016-09-13 | Qorvo Us, Inc. | Weakly coupled RF network based power amplifier architecture |
US9484879B2 (en) | 2013-06-06 | 2016-11-01 | Qorvo Us, Inc. | Nonlinear capacitance linearization |
US9871499B2 (en) | 2013-03-15 | 2018-01-16 | Qorvo Us, Inc. | Multi-band impedance tuners using weakly-coupled LC resonators |
US9774311B2 (en) | 2013-03-15 | 2017-09-26 | Qorvo Us, Inc. | Filtering characteristic adjustments of weakly coupled tunable RF filters |
US9966981B2 (en) | 2013-06-06 | 2018-05-08 | Qorvo Us, Inc. | Passive acoustic resonator based RF receiver |
US9705542B2 (en) | 2013-06-06 | 2017-07-11 | Qorvo Us, Inc. | Reconfigurable RF filter |
US9780817B2 (en) | 2013-06-06 | 2017-10-03 | Qorvo Us, Inc. | RX shunt switching element-based RF front-end circuit |
US9800282B2 (en) | 2013-06-06 | 2017-10-24 | Qorvo Us, Inc. | Passive voltage-gain network |
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ES2637119T3 (es) | 2013-10-16 | 2017-10-10 | Telefonaktiebolaget Lm Ericsson (Publ) | Disposición, transceptor, procedimiento y programa informático de inductor sintonizable |
EP2863429B1 (fr) | 2013-10-16 | 2017-06-14 | Telefonaktiebolaget LM Ericsson (publ) | Agencement d'inducteur accordable, émetteur-récepteur, procédé et programme informatique |
US9276616B2 (en) * | 2014-01-10 | 2016-03-01 | Qualcomm Technologies International, Ltd. | Integrated circuit chip inductor configuration |
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US20160125995A1 (en) * | 2014-10-31 | 2016-05-05 | Qualcomm Incorporated | Array of interleaved 8-shaped transformers with high isolation between adjacent elements |
TWI622068B (zh) * | 2015-02-02 | 2018-04-21 | 瑞昱半導體股份有限公司 | 積體電感結構 |
CN105990322B (zh) * | 2015-02-06 | 2019-03-15 | 瑞昱半导体股份有限公司 | 积体电感结构 |
TWI584316B (zh) * | 2015-05-20 | 2017-05-21 | 瑞昱半導體股份有限公司 | 電感裝置 |
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US10796835B2 (en) | 2015-08-24 | 2020-10-06 | Qorvo Us, Inc. | Stacked laminate inductors for high module volume utilization and performance-cost-size-processing-time tradeoff |
US10692645B2 (en) * | 2016-03-23 | 2020-06-23 | Qorvo Us, Inc. | Coupled inductor structures |
WO2018079134A1 (fr) | 2016-10-31 | 2018-05-03 | 株式会社江口高周波 | Réacteur |
US11139238B2 (en) | 2016-12-07 | 2021-10-05 | Qorvo Us, Inc. | High Q factor inductor structure |
CN108616218A (zh) * | 2016-12-13 | 2018-10-02 | 湖南格兰德芯微电子有限公司 | 射频电感变换器 |
CN110494939B (zh) * | 2017-04-10 | 2021-07-30 | 瑞典爱立信有限公司 | 集成变压器 |
TWI647716B (zh) * | 2017-12-26 | 2019-01-11 | 國家中山科學研究院 | Variable inductor |
US11552594B2 (en) * | 2018-03-30 | 2023-01-10 | Intel Corporation | Oscillator frequency range extension using switched inductor |
CN108777565B (zh) * | 2018-06-04 | 2022-08-09 | 成都仕芯半导体有限公司 | 电感耦合式谐振器及其构成的压控振荡器 |
TWI666662B (zh) | 2018-06-20 | 2019-07-21 | 瑞昱半導體股份有限公司 | 可變電感裝置 |
CN110660556B (zh) * | 2018-06-28 | 2021-11-12 | 瑞昱半导体股份有限公司 | 可变电感装置 |
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CN110783079B (zh) * | 2019-11-08 | 2021-11-02 | 展讯通信(上海)有限公司 | 一种电感结构 |
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-
2005
- 2005-08-29 US US11/214,076 patent/US7432794B2/en active Active
-
2006
- 2006-07-28 TW TW095127614A patent/TWI431927B/zh active
- 2006-08-02 MY MYPI20063744A patent/MY140388A/en unknown
- 2006-08-18 AT AT06792885T patent/ATE430371T1/de not_active IP Right Cessation
- 2006-08-18 WO PCT/EP2006/065437 patent/WO2007025875A1/fr active Application Filing
- 2006-08-18 CN CN2006800319928A patent/CN101253585B/zh active Active
- 2006-08-18 CA CA2620623A patent/CA2620623C/fr active Active
- 2006-08-18 KR KR1020087005141A patent/KR101256697B1/ko active IP Right Grant
- 2006-08-18 EP EP06792885A patent/EP1929486B1/fr active Active
- 2006-08-18 RU RU2008112129/07A patent/RU2416132C2/ru active
- 2006-08-18 BR BRPI0615402-6A patent/BRPI0615402B1/pt active IP Right Grant
- 2006-08-18 JP JP2008528460A patent/JP5154419B2/ja active Active
- 2006-08-18 PL PL06792885T patent/PL1929486T3/pl unknown
- 2006-08-18 DE DE602006006584T patent/DE602006006584D1/de active Active
-
2008
- 2008-11-06 HK HK08112207.6A patent/HK1120654A1/xx unknown
Also Published As
Publication number | Publication date |
---|---|
KR20080039464A (ko) | 2008-05-07 |
RU2008112129A (ru) | 2009-10-10 |
EP1929486B1 (fr) | 2009-04-29 |
MY140388A (en) | 2009-12-31 |
EP1929486A1 (fr) | 2008-06-11 |
PL1929486T3 (pl) | 2009-09-30 |
CA2620623A1 (fr) | 2007-03-08 |
DE602006006584D1 (de) | 2009-06-10 |
HK1120654A1 (en) | 2009-04-03 |
US20060033602A1 (en) | 2006-02-16 |
ATE430371T1 (de) | 2009-05-15 |
JP5154419B2 (ja) | 2013-02-27 |
RU2416132C2 (ru) | 2011-04-10 |
CN101253585A (zh) | 2008-08-27 |
KR101256697B1 (ko) | 2013-04-19 |
CN101253585B (zh) | 2011-01-19 |
TWI431927B (zh) | 2014-03-21 |
JP2009506562A (ja) | 2009-02-12 |
BRPI0615402A2 (pt) | 2012-12-04 |
US7432794B2 (en) | 2008-10-07 |
WO2007025875A1 (fr) | 2007-03-08 |
TW200713794A (en) | 2007-04-01 |
BRPI0615402B1 (pt) | 2018-05-29 |
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