CA2440694A1 - Quasi-cw diode-pumped, solid-state uv laser system and method employing same - Google Patents
Quasi-cw diode-pumped, solid-state uv laser system and method employing same Download PDFInfo
- Publication number
- CA2440694A1 CA2440694A1 CA002440694A CA2440694A CA2440694A1 CA 2440694 A1 CA2440694 A1 CA 2440694A1 CA 002440694 A CA002440694 A CA 002440694A CA 2440694 A CA2440694 A CA 2440694A CA 2440694 A1 CA2440694 A1 CA 2440694A1
- Authority
- CA
- Canada
- Prior art keywords
- laser
- current
- time interval
- target area
- time intervals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
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- 230000025600 response to UV Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
- H05K3/0038—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material combined with laser drilling through a metal layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Lasers (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27524601P | 2001-03-12 | 2001-03-12 | |
| US60/275,246 | 2001-03-12 | ||
| PCT/US2002/007486 WO2002073322A1 (en) | 2001-03-12 | 2002-03-12 | Quasi-cw diode-pumped, solid-state uv laser system and method employing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2440694A1 true CA2440694A1 (en) | 2002-09-19 |
Family
ID=23051465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002440694A Abandoned CA2440694A1 (en) | 2001-03-12 | 2002-03-12 | Quasi-cw diode-pumped, solid-state uv laser system and method employing same |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JP4583711B2 (enExample) |
| KR (1) | KR100853254B1 (enExample) |
| CN (1) | CN100351719C (enExample) |
| CA (1) | CA2440694A1 (enExample) |
| DE (1) | DE10296512T5 (enExample) |
| GB (1) | GB2390994B (enExample) |
| TW (1) | TW523435B (enExample) |
| WO (1) | WO2002073322A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100985018B1 (ko) * | 2010-04-06 | 2010-10-04 | 주식회사 엘앤피아너스 | 기판 가공 장치 |
| AU2013380267B2 (en) * | 2013-02-27 | 2017-03-30 | Alcon Inc. | Laser apparatus and method for laser processing a target material |
| CN105142853B (zh) * | 2013-02-28 | 2017-07-04 | Ipg光子公司 | 用于加工蓝宝石的激光系统和方法 |
| CN111478173B (zh) * | 2020-05-19 | 2021-03-05 | 中国科学院福建物质结构研究所 | 一种1.5微米被动调q激光器 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2547519B1 (fr) * | 1983-06-15 | 1987-07-03 | Snecma | Procede et dispositif de percage par laser |
| US5477043A (en) | 1989-10-30 | 1995-12-19 | Symbol Technologies, Inc. | Scanning arrangement for the implementation of scanning patterns over indicia by driving the scanning elements in different component directions |
| DE59006631D1 (de) * | 1990-06-05 | 1994-09-01 | Audemars S A R | Verfahren und Vorrichtung zum Schneiden von Material. |
| JPH0529693A (ja) * | 1990-09-19 | 1993-02-05 | Hitachi Ltd | マルチパルスレーザ発生装置、及びその方法、並びにそのマルチパルスレーザを用いた加工方法 |
| US5293025A (en) * | 1991-08-01 | 1994-03-08 | E. I. Du Pont De Nemours And Company | Method for forming vias in multilayer circuits |
| JP3315556B2 (ja) * | 1994-04-27 | 2002-08-19 | 三菱電機株式会社 | レーザ加工装置 |
| US5593606A (en) * | 1994-07-18 | 1997-01-14 | Electro Scientific Industries, Inc. | Ultraviolet laser system and method for forming vias in multi-layered targets |
| US5841099A (en) * | 1994-07-18 | 1998-11-24 | Electro Scientific Industries, Inc. | Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets |
| US5751585A (en) | 1995-03-20 | 1998-05-12 | Electro Scientific Industries, Inc. | High speed, high accuracy multi-stage tool positioning system |
| JPH09163984A (ja) * | 1995-10-12 | 1997-06-24 | Sony Corp | 遺伝子組替え用レーザ装置およびこれを用いた遺伝子組替え方法 |
| US5822211A (en) | 1996-11-13 | 1998-10-13 | International Business Machines Corporation | Laser texturing apparatus with dual laser paths having an independently adjusted parameter |
| US5943351A (en) * | 1997-05-16 | 1999-08-24 | Excel/Quantronix, Inc. | Intra-cavity and inter-cavity harmonics generation in high-power lasers |
| JP4500374B2 (ja) * | 1997-05-27 | 2010-07-14 | ジェイディーエス ユニフエイズ コーポレーション | レーザーマーキングシステムおよびエネルギー制御方法 |
| US6188704B1 (en) | 1998-01-26 | 2001-02-13 | Rocky Mountain Instrument Co. | Diode-pumped laser drive |
| JPH11267867A (ja) * | 1998-03-23 | 1999-10-05 | Seiko Epson Corp | レーザ加工方法及び装置 |
| US6197133B1 (en) * | 1999-02-16 | 2001-03-06 | General Electric Company | Short-pulse high-peak laser shock peening |
| JP2000301372A (ja) * | 1999-04-23 | 2000-10-31 | Seiko Epson Corp | 透明材料のレーザ加工方法 |
| US6252195B1 (en) * | 1999-04-26 | 2001-06-26 | Ethicon, Inc. | Method of forming blind holes in surgical needles using a diode pumped Nd-YAG laser |
-
2002
- 2002-03-12 CN CNB028064038A patent/CN100351719C/zh not_active Expired - Fee Related
- 2002-03-12 WO PCT/US2002/007486 patent/WO2002073322A1/en not_active Ceased
- 2002-03-12 KR KR1020037011920A patent/KR100853254B1/ko not_active Expired - Fee Related
- 2002-03-12 TW TW091104537A patent/TW523435B/zh not_active IP Right Cessation
- 2002-03-12 GB GB0323441A patent/GB2390994B/en not_active Expired - Fee Related
- 2002-03-12 CA CA002440694A patent/CA2440694A1/en not_active Abandoned
- 2002-03-12 DE DE10296512T patent/DE10296512T5/de not_active Ceased
- 2002-03-12 JP JP2002572515A patent/JP4583711B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2390994A (en) | 2004-01-28 |
| WO2002073322A1 (en) | 2002-09-19 |
| KR100853254B1 (ko) | 2008-08-21 |
| KR20030087017A (ko) | 2003-11-12 |
| CN1714318A (zh) | 2005-12-28 |
| GB2390994B (en) | 2004-10-13 |
| JP4583711B2 (ja) | 2010-11-17 |
| DE10296512T5 (de) | 2004-04-29 |
| GB0323441D0 (en) | 2003-11-05 |
| JP2004528984A (ja) | 2004-09-24 |
| TW523435B (en) | 2003-03-11 |
| CN100351719C (zh) | 2007-11-28 |
| WO2002073322B1 (en) | 2003-02-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued | ||
| FZDE | Discontinued |
Effective date: 20080312 |