JP4583711B2 - 準ｃｗダイオードポンプ式固体ｕｖレーザシステム及びそれを使用する方法 - Google Patents

準ｃｗダイオードポンプ式固体ｕｖレーザシステム及びそれを使用する方法 Download PDF

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JP4583711B2
JP4583711B2 JP2002572515A JP2002572515A JP4583711B2 JP 4583711 B2 JP4583711 B2 JP 4583711B2 JP 2002572515 A JP2002572515 A JP 2002572515A JP 2002572515 A JP2002572515 A JP 2002572515A JP 4583711 B2 JP4583711 B2 JP 4583711B2
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laser
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output
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JP2002572515A
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Japanese (ja)
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JP2004528984A (ja
JP2004528984A5 (enExample
Inventor
エス ハリス リチャード
サン ユンロン
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エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0038—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material combined with laser drilling through a metal layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Lasers (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laser Beam Processing (AREA)
JP2002572515A 2001-03-12 2002-03-12 準ｃｗダイオードポンプ式固体ｕｖレーザシステム及びそれを使用する方法 Expired - Fee Related JP4583711B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27524601P 2001-03-12 2001-03-12
PCT/US2002/007486 WO2002073322A1 (en) 2001-03-12 2002-03-12 Quasi-cw diode-pumped, solid-state uv laser system and method employing same

Publications (3)

Publication Number Publication Date
JP2004528984A JP2004528984A (ja) 2004-09-24
JP2004528984A5 JP2004528984A5 (enExample) 2005-12-22
JP4583711B2 true JP4583711B2 (ja) 2010-11-17

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ID=23051465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002572515A Expired - Fee Related JP4583711B2 (ja) 2001-03-12 2002-03-12 準ｃｗダイオードポンプ式固体ｕｖレーザシステム及びそれを使用する方法

Country Status (8)

Country Link
JP (1) JP4583711B2 (enExample)
KR (1) KR100853254B1 (enExample)
CN (1) CN100351719C (enExample)
CA (1) CA2440694A1 (enExample)
DE (1) DE10296512T5 (enExample)
GB (1) GB2390994B (enExample)
TW (1) TW523435B (enExample)
WO (1) WO2002073322A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100985018B1 (ko) * 2010-04-06 2010-10-04 주식회사 엘앤피아너스 기판 가공 장치
AU2013380267B2 (en) * 2013-02-27 2017-03-30 Alcon Inc. Laser apparatus and method for laser processing a target material
CN105142853B (zh) * 2013-02-28 2017-07-04 Ipg光子公司 用于加工蓝宝石的激光系统和方法
CN111478173B (zh) * 2020-05-19 2021-03-05 中国科学院福建物质结构研究所 一种1.5微米被动调q激光器

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547519B1 (fr) * 1983-06-15 1987-07-03 Snecma Procede et dispositif de percage par laser
US5477043A (en) 1989-10-30 1995-12-19 Symbol Technologies, Inc. Scanning arrangement for the implementation of scanning patterns over indicia by driving the scanning elements in different component directions
DE59006631D1 (de) * 1990-06-05 1994-09-01 Audemars S A R Verfahren und Vorrichtung zum Schneiden von Material.
JPH0529693A (ja) * 1990-09-19 1993-02-05 Hitachi Ltd マルチパルスレーザ発生装置、及びその方法、並びにそのマルチパルスレーザを用いた加工方法
US5293025A (en) * 1991-08-01 1994-03-08 E. I. Du Pont De Nemours And Company Method for forming vias in multilayer circuits
JP3315556B2 (ja) * 1994-04-27 2002-08-19 三菱電機株式会社 レーザ加工装置
US5593606A (en) * 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets
US5841099A (en) * 1994-07-18 1998-11-24 Electro Scientific Industries, Inc. Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets
US5751585A (en) 1995-03-20 1998-05-12 Electro Scientific Industries, Inc. High speed, high accuracy multi-stage tool positioning system
JPH09163984A (ja) * 1995-10-12 1997-06-24 Sony Corp 遺伝子組替え用レーザ装置およびこれを用いた遺伝子組替え方法
US5822211A (en) 1996-11-13 1998-10-13 International Business Machines Corporation Laser texturing apparatus with dual laser paths having an independently adjusted parameter
US5943351A (en) * 1997-05-16 1999-08-24 Excel/Quantronix, Inc. Intra-cavity and inter-cavity harmonics generation in high-power lasers
JP4500374B2 (ja) * 1997-05-27 2010-07-14 ジェイディーエス ユニフエイズ コーポレーション レーザーマーキングシステムおよびエネルギー制御方法
US6188704B1 (en) 1998-01-26 2001-02-13 Rocky Mountain Instrument Co. Diode-pumped laser drive
JPH11267867A (ja) * 1998-03-23 1999-10-05 Seiko Epson Corp レーザ加工方法及び装置
US6197133B1 (en) * 1999-02-16 2001-03-06 General Electric Company Short-pulse high-peak laser shock peening
JP2000301372A (ja) * 1999-04-23 2000-10-31 Seiko Epson Corp 透明材料のレーザ加工方法
US6252195B1 (en) * 1999-04-26 2001-06-26 Ethicon, Inc. Method of forming blind holes in surgical needles using a diode pumped Nd-YAG laser

Also Published As

Publication number Publication date
GB2390994A (en) 2004-01-28
WO2002073322A1 (en) 2002-09-19
KR100853254B1 (ko) 2008-08-21
KR20030087017A (ko) 2003-11-12
CN1714318A (zh) 2005-12-28
GB2390994B (en) 2004-10-13
DE10296512T5 (de) 2004-04-29
GB0323441D0 (en) 2003-11-05
CA2440694A1 (en) 2002-09-19
JP2004528984A (ja) 2004-09-24
TW523435B (en) 2003-03-11
CN100351719C (zh) 2007-11-28
WO2002073322B1 (en) 2003-02-20

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