TW523435B - Quasi-CW diode-pumped, solid-state UV laser system and method employing same - Google Patents

Quasi-CW diode-pumped, solid-state UV laser system and method employing same Download PDF

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Publication number
TW523435B
TW523435B TW091104537A TW91104537A TW523435B TW 523435 B TW523435 B TW 523435B TW 091104537 A TW091104537 A TW 091104537A TW 91104537 A TW91104537 A TW 91104537A TW 523435 B TW523435 B TW 523435B
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TW
Taiwan
Prior art keywords
laser
current
current level
time interval
output
Prior art date
Application number
TW091104537A
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Chinese (zh)
Inventor
Yunlong Sun
Richard S Harris
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Electro Scient Ind Inc
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Application filed by Electro Scient Ind Inc filed Critical Electro Scient Ind Inc
Priority to US10/242,299 priority Critical patent/US6781090B2/en
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Publication of TW523435B publication Critical patent/TW523435B/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • B23K26/382Removing material by boring or cutting by boring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0026Etching of the substrate by chemical or physical means by laser ablation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0026Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0038Etching of the substrate by chemical or physical means by laser ablation of organic insulating material combined with laser drilling through a metal layer

Abstract

A quasi-CW diode- or lamp-pumped, A-O Q-switched solid-state UV laser system (10) synchronizes timing of the quasi-CW pumping with movement of the positioning system (36) to reduce pumping while the positioning system (36) is moving from one target area (31) to the next target area (31) to form multiple vias in a substrate at a high throughput. Thus, the available UV power for via formation is higher even though the average pumping power to the laser medium (16), and thermal loading of the laser pumping diodes (14), remains the same as that currently available through conventional CW pumping with conventionally available laser pumping diodes (14). The quasi-CW pumping current profile can be further modified to realize a preferred UV pulse amplitude profile.

Description

523435 A7 ___B7__ 五、發明說明(/ ) 相關申請案 本專利申請案係根據2001年3月12日所申請之美國 臨時專利申請案60/275,246號主張優先權。 著作權涌告 ©2001 Electro Scientific Industries, Inc.,此專利文件之 一部分揭示含有接受著作權保護之資料,著作權之所有權 人並不反對任何人傳真複製該專利文件或專利揭示之事物 ,只要其發表於專利及商標局之專利檔案或記錄即可,否 則將保留所有著作權之權利。37 CFR § 1.71(d)。 技術領域 本發明有關二極體泵固態雷射,且特別地有關諸如用 於形成通孔於電路板中之準連續波脈波式紫外線雷射系統 及使用其之處理方法。 發明背景 不同形式之雷射系統已使用於鑽孔通孔於諸如印刷電 路板(PCBs)之電子裝置上的點對點之標靶區域處。下文解 說僅藉由舉例二極體泵固態紫外線(UV)雷射系統及電子標 靶呈現於本文中,而不應視爲限制本發明之範疇。 當使用諸如包含光波電子裝置(LWE)之型號210雷射 之 Electro Scientific Industries Inc· (ESI)型號爲 5200 的聲光 (A-Q)Q開關式連續波(CW)二極體泵(DP)固態(SS)雷射系統 來產生通孔時,該泵二極體或二極體會持地維持作用狀 態。無論何時只要定位系統指向電子裝置上之新的靶區域 時,會藉關閉Q開關而阻止雷射發射。在該定位系統對準 3 本紙張尺度適用中國國家標準(CNS)A4規格(210x 297公爱) - (請先閱讀背面之注意事項再填寫本頁) ,裝 • n ί ϋ n n n n 訂---------· 523435 A7 ____ B7 _ 五、發明說明(> ) 新的標靶區域之後,雷射系統將藉由以一預定的重複率開 啓Q開關而發射含有一或更多個雷射脈波之雷射輸出。 LWE型號210使用兩個20瓦(W)之用於泵激的連續波 (CW)二極體且以10 KHz之重複率來產生3瓦之紫外線(UV) 輸出功率。到二極體之連續波泵電流係受限於二極體的熱 負載,若一應用保證較大的紫外線輸出功率時,則必須使 用具有較高電流/功率額定値之二極體或諸如兩個30.瓦二 極體雷射條或四個20瓦二極體雷射條之更多的二極體。由 此等設計可期待大約8瓦之紫外線輸出功率。然而,若使 用較高的泵功率,則會增加固態雷射媒體上的熱負載,而 熱過載該雷射媒體則會永久地損壞它,或造成雷射光束品 質及功率大大地劣化,此限制使雷射系統設計及製造面臨 重要的工程挑戰。 然而’諸如脈波泵及準連續波泵之其他泵設計係可用 於雷射設計,諸如Lambda Physics,Model早期形式之“ Gator”紫外線的電光(E_0) Q開關脈波式DPSS紫外線雷射 使用E-0 Q開關,因爲該雷射系統適合高增益及低婁複率 。對於各泵脈波,僅產生一紫外線雷射脈波,該泵週期時 間限制於數百微秒(//s),所以雷射輸出脈波重複率典型地 限制於2 KHz以下。此泵設計對於鑽孔通孔並非較佳的, 因爲其將不利地影響鑽孔之產出量。 習知的準連續波泵相似於脈波泵,但卻以較低的峰値 栗功率而具有較長的泵週期時間。根據所使用之二極體的 重複率及工作週期,該泵設計亦可具有大約丨至2 KHz之 4 衣紙張尺度適—用中國國家標準21〇 (請先閱讀背面之注意事項再填寫本頁)523435 A7 ___B7__ V. Description of Invention (/) Related Applications This patent application claims priority based on US Provisional Patent Application No. 60 / 275,246 filed on March 12, 2001. Copyright notice © 2001 Electro Scientific Industries, Inc., a part of this patent document reveals that the material is protected by copyright. The copyright owner has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure, provided that it is published in the patent. And the patent file or record of the Trademark Office, otherwise all copyright rights will be reserved. 37 CFR § 1.71 (d). BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state laser of a diode pump, and more particularly, to a quasi-continuous-wave pulse-type ultraviolet laser system for forming a through hole in a circuit board and a processing method using the same. BACKGROUND OF THE INVENTION Different forms of laser systems have been used to drill through holes in point-to-point target areas on electronic devices such as printed circuit boards (PCBs). The following explanation is presented herein by way of example only of a diode pump solid state ultraviolet (UV) laser system and an electronic target, and should not be considered as limiting the scope of the invention. When using an acousto-optic (AQ) Q-switched continuous wave (CW) diode pump (DP) solid-state (DP) pump such as Electro Scientific Industries Inc. (ESI) Model 5200, which includes a lightwave electronic device (LWE), model 210 SS) When the laser system is used to create the through hole, the pump diode or diode will maintain the active state. Whenever the positioning system is pointing at a new target area on an electronic device, the laser switch is prevented by turning off the Q switch. Alignment of this positioning system with 3 paper standards is applicable to China National Standard (CNS) A4 specifications (210x 297 public love)-(Please read the precautions on the back before filling this page), install • n ί ϋ nnnn order --- ------ · 523435 A7 ____ B7 _ 5. Explanation of the invention (>) After the new target area, the laser system will emit one or more shots by turning on the Q switch at a predetermined repetition rate. Laser output of laser pulse. The LWE Model 210 uses two 20-watt (W) continuous wave (CW) diodes for pumping and generates a 3-watt ultraviolet (UV) output power at a repetition rate of 10 KHz. The continuous wave pump current to the diode is limited by the thermal load of the diode. If an application guarantees a large UV output power, a diode with a higher current / power rating 30. watt diode laser bars or four more 20 watt diode laser bars. With these designs, an ultraviolet output of approximately 8 watts can be expected. However, if a higher pump power is used, the thermal load on the solid-state laser medium will be increased, and thermal overload of the laser medium will permanently damage it, or cause the laser beam quality and power to be greatly deteriorated. This limitation Make laser system design and manufacturing face important engineering challenges. However, 'other pump designs such as pulse wave pumps and quasi-continuous wave pumps can be used for laser design, such as Lambda Physics, Model's early form of "Gator" ultraviolet electro-optic (E_0) Q-switched pulsed DPSS UV laser uses -0 Q switch because the laser system is suitable for high gain and low complex rate. For each pump pulse, only one ultraviolet laser pulse is generated, and the pump cycle time is limited to hundreds of microseconds (// s), so the laser output pulse repetition rate is typically limited to less than 2 KHz. This pump design is not optimal for drilling through holes, as it will adversely affect the throughput of the drilling. The conventional quasi-continuous wave pump is similar to a pulse wave pump, but has a longer pump cycle time with a lower peak power. Depending on the repetition rate and duty cycle of the diode used, the pump design can also have a size of about 4 to 2 KHz. The paper size is suitable-use Chinese national standard 21〇 (Please read the precautions on the back before filling this page )

n n 1 '^i n ϋ· n. n n I 523435 A7 ___B7_____ 五、發明說明(-) 泵重複率而泵週期時間可從數百微秒至數毫秒(ms),此泵 設計允許當泵開啓而未執行連續波之時較高的泵位準,因 爲無論何時只要泵關閉時該二極體即“靜止”(且熱負載 停止)。所以,在泵時間週期之期間,該雷射輸出功率相 比較於相當之連續波脈波式雷射之雷射輸出功率亦係較高 的。該雷射輸出係藉控制至二極體之電流而予以控制。然 而,此泵設計的泵重複率仍爲重大的缺點。準連續波泵的 典型應用包含諸如雷射接合及焊接法之該等利用長的雷射 脈波寬度以及適度之峰値功率者。 因此,所企望的爲一種包含可促成較高功率及較快重 複率之泵設計以增加鑽孔產出量之雷射系統。 發明槪要 習知之紫外線雷射系統利用一標準頻率轉換設計以轉 換紅外線(IR)區中之雷射基本波長爲紫外線(UV)。此等紫 外線通孔形成系統較佳地利用高的紫外線功率及高的重複 率來取得通孔形成之高產出量。因此,A-0 Q開關DPSS雷 射系統至今已較佳地用於鑽孔通孔。 然而,市面上所企望之系統將喜愛較高的紫外線功率 以用於降低通孔鑽孔時間,或在諸如銅及FR4之若干“難 以鑽孔”之材料上完成可接受之通孔。所以,在高重複率 (數KHz至數十KHz)下之高的紫外線輸出功率(5至15 瓦)將爲較佳的。 而且,爲有用於商業,例如在PCB上之通孔形成將需 要雷射系統能在每秒完成300至400個通孔,因此,雷射 5 木紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) ^裝 523435 A7 ____B7 五、發明說明(4 ) 定位系統必須每秒鐘移動到300至400個新位置。典型地 ,雷射系統花費少於1毫秒(ms)來鑽孔一通孔,但在若干 情況中常花費比1毫秒更長的時間移動至新的位置以用於 下一個通孔。因此,實際上,用於開啓(ON)雷射之時間會 比關閉(OFF)雷射的時間更少,而使雷射的使用相當地沒有 效率。 本發明提供一種準連續波二極體/燈泵A-0 Q開關固 態紫外線雷射,當定位系統正從一標靶區移動到下一標靶 區時,可使該準連續波泵之時序同步而避免泵。所以,用 於通孔形成之有效的紫外線功率較高,即使是對於雷射媒 體及泵二極體之熱負載的平均泵功率維持相同於現有之透 過具有習知有效之雷射二極體之習知連續波泵的平均泵功 率。該準連續波栗電流波形可進一步地修正以實現一較佳 之紫外線脈波振幅波形。 此一準連續波二極體或燈泵A-0 Q開關固態紫外線雷 射是新穎的;具有光束掃描之準連續波泵的同步是新穎的 ;以及此一雷射系統使用於通孔形成亦是新穎的。 從下文參照圖式之較佳實施例的詳細說明可淸楚明瞭 本發明之額外的目的及優點。 第1圖係一具有腔內三頻轉換之準連續波二極體泵A-〇Q開關雷射之實施例的簡化示意圖; 第2A圖係準連續波栗二極體電流之範例波形的簡化 圖形說明;以及 6 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝--------訂------- 523435 A7 B7 五、發明說明(C ) 第2B圖係範例A-0 Q開關雷射脈波重疊在第2A圖中 所示之準泵二極體電流上之簡化圖形說明。 元件符號說明 10 雷射系統 12 雷射共振器 14 雷射泵二極體 16 雷射媒體 18 IR鏡 20 紫外線透射性輸出藕合器 22 光軸 24 聲光Q開關 26 頻率倍增器 28 頻率三倍器 50,50a,50b,50c 電流脈波或時隔 60,60a,60b,60c 雷射脈波 30 工件 31 標靶區 32 中央處理單元(CPU) 34 電源供應器 36 定位系統 38 Q開關控制器 40 雷射系統輸出脈波 (請先閱讀背面之注意事項再填寫本頁) 較佳實施例詳細說明 第1圖係準連續波脈波式二極體泵A-0 Q開關固態紫 木紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 523435 A7 --------— B7__ 五、發明說明(b ) 外線雷射系統10之較佳實施例的簡化示意圖,該系統10 係具有同步的標靶、泵、及發射而以高產出率來形成通孔 。參閱第1圖,雷射系統10之雷射共振器12係顯示具有 二極體14泵雷射媒體16於其側邊,然而,熟習於本項技 術之人士將理解的是,共振器丨2可摺疊且該泵設計可爲“ 末端泵”或該雷射系統1〇可利用其他可行之熟知組態。範 例之二極體14包含,但未受限於SDL,lnc. 〇f San Jose, California所販售之型號SDL-3200序歹[j 100瓦準連續波陣 列及960瓦高工作因數堆疊陣列。範例之固態雷射媒體16 包含具有YAG,YLF,及YV〇4成份之激射物。在IR反射 鏡18與紫外線(第三諧波)透射性輸出藕合器2〇之間, 共振器12沿其光軸22亦包含一聲光(A-0) Q開關24、一 頻率倍增器26、及一用腔內頻率轉換之頻率三倍器28。熟 習於本項技術之人士將理解的是,頻率轉換可於共振器12 外部完成。 第2A及2B圖(共成第2圖)係分別地簡化地圖示準 泵二極體電流脈波或時隔50a,50b及50c (總稱爲電流時隔 50)之範例波形以及重疊在第2A圖中所示之準泵二極體電 流波形上之範例A-0 Q開關雷射脈波60a,60b及60c (總稱 稱爲雷射脈波60)。參閱第1及2圖,使雷射系統操作同 步,使得當雷射系統10於工件30上之一第一標靶區31 完成製成一通孔之時,中央處理單元(CPU;)32會藉控制電 源供應器34來停止二極體泵(轉變二極體電流爲零)或降 低二極體泵到一預定的低電流準位。範例電源供應器34包 8 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公餐^ -- (請先.S3讀背面之注意事項再填寫本頁) • · n n n I ί ·ϋ n 一-口 T · n It in n an - 523435 A7 _ B7 ___ 五、發明說明(7 ) 含,但未受限於:型號SDL-820 ’用於具有典型的10微秒( Vs)電流轉變時間之1〇至15安培連續波雷射二極體驅動 器;型號SDL-830,用於約50安培連續波雷射驅動器;或 型號SDL-928,用於約150安培峰値準連續波雷射二極體 陣列驅動器,均販售自 SDL,Inc· of San Jose,California。 然後,定位系統36移動光束輸出位置至一新的標靶區 31。較佳地,該光束定位系統36包含一平移台疋位窃2 ’ S亥 平移台定位器利用至少兩個橫向台而允許快速移動於相同 或不同工件30上之標靶區31之間。在一較佳實施例中, 該平移台定位器爲一分軸系統,其中Y台移動工件30而X 台移動一快速定位器及相關連之聚焦透鏡,在該X台與Y 台間之Z空間尺寸亦係可調整的。定位鏡會透過雷射共振 器12與快速定位器間之任何轉向來對齊光學路徑22,例 如該快速定位器可使用高解析之線性鏡及/或一對檢流計 鏡而可根據所提供之測試或設計資料來執行單一或重複的 處理操作。該等台及定位器可被控制及獨立地或協調地移 動,以響應儀板化資料或未儀板化資料而一齊移動。 光束定位系統36可利用習知之視覺或光束來操作對齊 系統,該等對齊系統可透過一物鏡作業或以一分離式攝影 機離軸地作業,且該等對齊系統係爲精硏本項技術之人士 所熟知。在一實施例中,由 Electro Scientific Industries,Inc. 所販售之定位系統36中使用自由庫軟體之HRVX視覺盒係 使用於執行對齊於雷射共振器12與工件30上之標靶區之 間。其他適用之對齊系統亦可於市面上取得。 _ 9 本紙張尺g用中國國家標準(^CNS)A4規格(21〇 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)nn 1 '^ in n · n. nn I 523435 A7 ___B7_____ 5. Description of the invention (-) Pump repetition rate and pump cycle time can be from hundreds of microseconds to milliseconds (ms). This pump design allows when the pump is turned on without Higher pump level when continuous wave is performed because the diode is "rested" (and the thermal load is stopped) whenever the pump is turned off. Therefore, during the pump time period, the laser output power is also higher than that of a comparable continuous wave pulsed laser. The laser output is controlled by controlling the current to the diode. However, the pump repetition rate of this pump design remains a significant disadvantage. Typical applications for quasi-continuous wave pumps include those that use long laser pulse widths and moderate peak-to-peak power, such as laser bonding and welding. Therefore, what is desired is a laser system that includes a pump design that promotes higher power and faster repetition rates to increase drilling output. SUMMARY OF THE INVENTION The conventional ultraviolet laser system uses a standard frequency conversion design to convert the fundamental wavelength of the laser in the infrared (IR) region to ultraviolet (UV). These ultraviolet through-hole forming systems preferably make use of high ultraviolet power and high repetition rate to achieve a high throughput of through-hole formation. Therefore, the A-0 Q-switched DPSS laser system has so far been better used for drilling through holes. However, the desired systems on the market will love higher UV power for reducing through-hole drilling time, or to complete acceptable through-holes on certain "difficult to drill" materials such as copper and FR4. Therefore, a high ultraviolet output power (5 to 15 watts) at a high repetition rate (a few KHz to several tens of KHz) will be better. Moreover, for commercial use, for example, the formation of via holes on a PCB will require the laser system to be able to complete 300 to 400 vias per second. Therefore, the laser 5 wood paper scale applies the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) (Please read the notes on the back before filling out this page) ^ Install 523435 A7 ____B7 V. Description of the invention (4) The positioning system must be moved to 300 to 400 new positions every second. Laser systems typically take less than 1 millisecond (ms) to drill a through hole, but in some cases it often takes longer than 1 millisecond to move to a new location for the next through hole. Therefore, in fact, the time for turning on the laser will be less than the time for turning it off, making the use of the laser rather inefficient. The invention provides a quasi-continuous wave diode / lamp pump A-0 Q switch solid-state ultraviolet laser, which can make the timing of the quasi-continuous wave pump when the positioning system is moving from one target area to the next target area. Synchronize while avoiding pumps. Therefore, the effective ultraviolet power used for through-hole formation is relatively high, and the average pump power for the thermal load of the laser medium and the pump diode remains the same as that of the conventional laser diode with a conventionally effective laser diode. The average pump power of a continuous wave pump is known. The quasi-continuous wave current waveform can be further modified to achieve a better ultraviolet pulse wave amplitude waveform. This quasi-continuous wave diode or lamp pump A-0 Q switch solid-state ultraviolet laser is novel; the synchronization of quasi-continuous wave pumps with beam scanning is novel; and this laser system is also used for through-hole formation. Is novel. Additional objects and advantages of the present invention will be apparent from the following detailed description of a preferred embodiment with reference to the accompanying drawings. Fig. 1 is a simplified schematic diagram of an embodiment of a quasi-continuous-wave diode pump A-〇Q switch laser with intra-cavity three-frequency conversion; Fig. 2A is a simplification of an example waveform of a quasi-continuous-wave diode current Graphic description; and 6 paper sizes are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling out this page) ---- 523435 A7 B7 V. Description of the Invention (C) Figure 2B is a simplified graphic illustration of the A-0 Q-switch laser pulse superimposed on the quasi-pump diode current shown in Figure 2A. Description of component symbols 10 Laser system 12 Laser resonator 14 Laser pump diode 16 Laser medium 18 IR mirror 20 Ultraviolet transmittance output coupler 22 Optical axis 24 Acousto-optic Q switch 26 Frequency multiplier 28 Frequency three times 50, 50a, 50b, 50c current pulse or time interval 60, 60a, 60b, 60c laser pulse 30 workpiece 31 target area 32 central processing unit (CPU) 34 power supply 36 positioning system 38 Q switch controller 40 Laser system output pulse wave (please read the precautions on the back before filling this page) Detailed description of the preferred embodiment Figure 1 is a quasi-continuous wave pulse wave diode pump A-0 Q switch solid purple wood paper scale Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 523435 A7 ------------ B7__ V. Description of the invention (b) Simplified schematic diagram of a preferred embodiment of the external line laser system 10, which System 10 has synchronized targets, pumps, and launches to form through-holes with high throughput. Referring to FIG. 1, the laser resonator 12 of the laser system 10 is shown with a diode 14 pump laser medium 16 on its side. However, those skilled in the art will understand that the resonator 丨 2 It is foldable and the pump design can be an "end pump" or the laser system 10 can utilize other feasible well-known configurations. The example diode 14 includes, but is not limited to, SDL-lnf. Model SDL-3200 sequence sold by San Jose, California [j 100 watt quasi-continuous wave array and 960 watt high working factor stacked array. An exemplary solid-state laser medium 16 includes a lasing material having YAG, YLF, and YVO4 components. Between the IR reflector 18 and the ultraviolet (third harmonic) transmissive output coupler 20, the resonator 12 also includes an acousto-optic (A-0) Q switch 24 and a frequency multiplier along its optical axis 22 26. A frequency tripler 28 for frequency conversion in the cavity. Those skilled in the art will understand that the frequency conversion can be done outside the resonator 12. Figures 2A and 2B (combined Figure 2) are simplified simplified illustrations of the quasi-pump diode current pulses or time intervals 50a, 50b, and 50c (collectively referred to as the current time interval 50) of the example waveforms and overlapping Example A-0 Q-switched laser pulses 60a, 60b, and 60c (collectively referred to as laser pulses 60) on the quasi-pump diode current waveforms shown in Figure 2A. Referring to FIGS. 1 and 2, the operation of the laser system is synchronized, so that when the laser system 10 finishes forming a through hole on one of the first target areas 31 on the workpiece 30, the central processing unit (CPU;) 32 will borrow The power supply 34 is controlled to stop the diode pump (convert the diode current to zero) or reduce the diode pump to a predetermined low current level. Sample power supply 34 packs 8 This paper size applies to Chinese National Standard (CNS) A4 specifications (210 X 297 meals ^-(Please read the precautions on the back of S3 before filling out this page) • · nnn I ί · ϋ n One-port T · n It in n an-523435 A7 _ B7 ___ V. Description of the invention (7) Included, but not limited to: Model SDL-820 'for use with a typical 10 microsecond (Vs) current 10 to 15 Ampere Continuous Wave Laser Diode Drivers for Transition Time; Model SDL-830 for approximately 50 Ampere Continuous Wave Laser Drivers; or Model SDL-928 for approximately 150 Amperes Peak / Quasi Continuous Wave Lasers The laser diode array drivers are all sold from SDL, Inc. of San Jose, California. Then, the positioning system 36 moves the beam output position to a new target area 31. Preferably, the beam positioning system 36 includes a The translation stage locator 2'S Hai translation stage positioner uses at least two lateral stages to allow rapid movement between target areas 31 on the same or different workpieces 30. In a preferred embodiment, the translation stage is positioned The device is a split-axis system, where Y table moves the workpiece 30 and X table moves a quick positioner and The associated focusing lens is also adjustable in the Z space size between the X and Y stages. The positioning mirror will align the optical path 22 through any turning between the laser resonator 12 and the fast positioner, such as the fast Positioners can use high-resolution linear mirrors and / or a pair of galvanometer mirrors to perform single or repeated processing operations based on the test or design information provided. The tables and positioners can be controlled and independently or Coordinated movement in response to instrumented or non-instrumented data. Beam positioning system 36 can use conventional vision or light beams to operate alignment systems that can be operated through an objective lens or separated The camera operates off-axis, and the alignment systems are well known to those skilled in the art. In one embodiment, HRVX using free library software is used in the positioning system 36 sold by Electro Scientific Industries, Inc. The vision box is used to perform alignment between the target area on the laser resonator 12 and the workpiece 30. Other suitable alignment systems are also available on the market. _ 9 This paper ruler China National Standard (^ CNS) A4 specification (21〇 X 297 mm) (Please read the precautions on the back before filling this page)

n n 一 口,· ϋ ϋ n n ί ί ί I %- 523435 A7 ___B7__ 五、發明說明(/ ) 此外,光束定位系統36最好亦使用無接點、小位移 感測器,以確定由於該等台之節距,偏搖,或滾動所造成 Abbe誤差,該誤差係未藉諸如線性比例尺編碼器或雷射干 涉儀之軸上位置指示器加以指示。Abbe誤差修正系統可相 對於精準的參考標準予以校準,所以修正僅依據感測到感 測器讀數小的改變而不會依據感測器讀數的絕對準確性。 此一 Abbe誤差修正系統詳細地說明於2001年7月19日所 公告之國際公告第WO 01/52004 A1號及2001年10月18 日所公告之美國公告第2001-0029674 A1號中。Cutler之相 對應的美國專利申請案第09/755950號揭示的相關部分將 引用於本文中供參考。 定位系統36之許多變化係爲精硏本技術者所熟知,且 定位系統36之一些實施例係詳細地描述於Cutler等人之美 國專利第 5751585 號中,商售自 Electro Scientific Industries, Inc· of Portland, Oregon之ESI型號5320微通孔鑽孔系統係 定位系統36之較佳實施且已使用於電子產業之樹脂塗覆之 銅封裝的雷射鑽孔,亦可使用諸如由Electro Scientlflcnn sip, · ϋ ϋ nn ί ί I%-523435 A7 ___B7__ 5. Description of the invention (/) In addition, the beam positioning system 36 is also best to use a contactless, small displacement sensor to determine Abbe errors caused by pitch, yaw, or roll are not indicated by on-axis position indicators such as linear scale encoders or laser interferometers. The Abbe error correction system can be calibrated against a precise reference standard, so corrections are based only on small changes in sensor readings and not on absolute accuracy of the sensor readings. This Abbe error correction system is described in detail in International Publication No. WO 01/52004 A1 published on July 19, 2001 and US Publication No. 2001-0029674 A1 published on October 18, 2001. Relevant portions disclosed in the corresponding U.S. Patent Application No. 09/755950 by Cutler will be incorporated herein by reference. Many variations of the positioning system 36 are well known to those skilled in the art, and some embodiments of the positioning system 36 are described in detail in U.S. Patent No. 5,751,585 by Cutler et al., Commercially available from Electro Scientific Industries, Inc. of Portland, Oregon's ESI model 5320 micro-via drilling system is a preferred implementation of the positioning system 36 and has been used for resin-coated copper-encapsulated laser drilling in the electronics industry.

Industries, Inc. in Portland,Oregon 所製造之型號系列 27χχ 、43χχ、44χχ、或53χχ之其他較佳的定位系統。熟習之人 士亦將理解的是,可選擇性地使用具有單一 χ-γ台的系統 ’用於以光束定位之固定光束及/或固定檢流計來進行工 件定位熟習於本項技術之人士將認識到,可程式規劃此一 系統以利用工具路徑檔而動態地高速定位聚焦之紫外線雷 射系統輸出脈波40,以產生週期性或非週期性之寬廣變化 10 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ' ---- ----------------- (請先閱讀背面之注意事項再填寫本頁) i]· ·Industries, Inc. in Portland, Oregon, other preferred positioning systems of the model series 27χχ, 43χχ, 44χχ, or 53χχ. Those skilled in the art will also understand that a system with a single χ-γ stage can optionally be used to position the beam with a fixed beam and / or a fixed galvanometer for workpiece positioning. Those skilled in the art will Recognize that this system can be programmed to use a tool path file to dynamically position the focused UV laser system to output pulses 40 to produce periodic or non-periodic wide changes. 10 This paper size applies Chinese national standards ( CNS) A4 specification (210 X 297 mm) '---- ----------------- (Please read the precautions on the back before filling this page) i] · ·

523435 A7 _____———- """" 五、發明說明(1 ) 的有用圖案。 當定位系統36抵達或幾乎抵達新的標靶區31或距離 二極體泵抑制一預定時隔處之時,CPU 32會使二極體回到 開啓(ON)。該CPU 32會指示Q開關控制器38打開Q開關 24而以預定重複率發射雷射脈波60 ’直到完成第二通孔爲 止。 泵電流時隔50之波形可予以調變以控制準連續波泵期 間之雷射脈波60的峰値功率波形的形狀,諸如在週期之期 間··平坦 '從低到高(第2A圖中所示)、或從高到低。 此外,該等電流波形可調變而具有不同的振幅,使得例如 視需要地可使用高峰値功率用於於鑽孔金屬層及可使用較 低峰値功率用於鑽孔介電層。同樣地,可調整電流泵時隔 50之時間週期以適合將處理之通孔的大小、深度、及材料 ,諸如較長的電流時隔50用於較大直徑的通孔。第2A及 2B圖顯示當工作週期可保持相同時,該雷射系統10容許 ,但並非需要,電流泵時隔50之可變週期及電流泵週期 50之間之可變週期。然而,若企望雷射輸出波形化,則該 工作週期可同樣地變化。 準連續波泵之重複率可易於達成高到2 kHz,該準連 續波泵之間的間隔時間無需恆常’只要對於雷射泵二極體 14及/或雷射媒體16之平均熱負載保持相對地恆常或在 熱損壞位準以下即可。 < 在一實施例中,連續波泵5瓦紫外線雷射系統]_〇的二 極體14及電源供應器34係被改變爲導通於可變電流泵, 11 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) -I * Hi n 1 a—· n an n 訂-------- -¾. 523435 A7 ________B7__ 五、發明說明(I u ) •---------------- (請先閲讀背面之注意事項再填寫本頁) 所產生之雷射系統丨〇能在500 KHz以2比1的工作週期運 轉。在該等二極體14停止另一 1毫秒之前它們會泵雷射媒 體16 1毫秒’所以,在泵週期之期間,約高至兩倍的電流 會進入二極體14之內(而不會不利地影響二極體14或雷 射媒體16上之平均熱負載)。因此,在該1毫秒泵週期期 間之雷射功率會超過兩倍多地大於來自相當之連續波泵雷 射的雷射功率(特別是在非線性頻率轉換之後)。使用於 雷射共振器12中之A-0 Q開關24會確保以例如10 KHz或 高達50 KHz之預定重複率發射雷射脈波60。523435 A7 _____ ———- " " " " V. Useful patterns of invention description (1). When the positioning system 36 reaches or almost reaches the new target area 31 or the diode pump inhibits a predetermined time interval, the CPU 32 returns the diode to ON. The CPU 32 instructs the Q-switch controller 38 to turn on the Q-switch 24 and emits a laser pulse 60 'at a predetermined repetition rate until the second through hole is completed. The waveform of the pump current interval 50 can be adjusted to control the shape of the peak pulse power waveform of the laser pulse 60 during the quasi-continuous wave pump, such as during the period ... "flat" from low to high (Figure 2A (Shown), or high to low. In addition, these current waveforms are adjustable and have different amplitudes, so that, for example, peak chirp power can be used for drilling metal layers and lower peak chirp power can be used for drilling dielectric layers as needed. Similarly, the time period of the current pump interval 50 can be adjusted to suit the size, depth, and material of the processed vias, such as a longer current interval 50 for larger diameter vias. Figures 2A and 2B show that the laser system 10 allows, but is not required when the duty cycle can be kept the same, the variable period of the current pump interval 50 and the variable period between the current pump period 50. However, if the laser output is desired to be waveformized, the duty cycle can be similarly changed. The repetition rate of a quasi-continuous wave pump can easily reach as high as 2 kHz. The interval between the quasi-continuous wave pumps does not need to be constant. As long as the average thermal load of the laser pump diode 14 and / or the laser medium 16 is maintained Relatively constant or below the thermal damage level. < In an embodiment, the continuous wave pump 5 watt UV laser system] _〇's diode 14 and power supply 34 are changed to be connected to a variable current pump. 11 This paper size applies Chinese national standards ( CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling this page) -I * Hi n 1 a— · n an n Order -------- -¾. 523435 A7 ________B7__ 5. Description of the invention (I u) • ---------------- (Please read the precautions on the back before filling in this page) Laser system generated 丨 〇 can be 500 KHz runs in a 2 to 1 duty cycle. They will pump the laser medium 16 for 1 millisecond before the diodes 14 stop for another 1 millisecond '. So, during the pumping cycle, about twice as much current will enter the diode 14 (and not Adversely affects the average thermal load on the diode 14 or the laser medium 16). Therefore, the laser power during this 1 millisecond pump cycle is more than twice as large as the laser power from a comparable continuous wave pump laser (especially after non-linear frequency conversion). The A-0 Q switch 24 used in the laser resonator 12 will ensure that the laser pulse 60 is emitted at a predetermined repetition rate of, for example, 10 KHz or up to 50 KHz.

工件30例如可爲IC (積體電路)晶片封裝、MCM ( 多重晶片模組)、電容器、電路板、電阻器、或混合式或 半導體微電路。爲便利起見,將以僅具有四層之工件30描 述於下。例如頂部及底部導電層可含有標準的金屬,諸如 鋁,銅,金,鉬,鎳,鈀,鉑,銀,鈦,鎢,金屬氮化物 或其組合。習知之金屬層其厚度會變化,典型地在9至36 微米之間(其中7.8X10·3公斤之金屬等於約9微米之厚度 )’但可爲更薄或爲72微米之厚度。典型地,導電層係由 同一材料所製成。 介電質矩陣或層係夾置於導電層之間且例如可含有標 準之有機介電材料,諸如苯環丁烷(BCB),順二丁烯乙醯胺 三口丫嗪(BT),卡片板,氰酸鹽酯,環氧,酚醛,聚乙醯胺 ’聚四氟乙烯(PTFE),種種聚合物合金或女組成物。習知 之有機介電層之厚度變化相當大,但典型地比金屬層厚得 多。有機介電層之典型的厚度範圍約爲30至400微米。 _ 12 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 x 297公釐) 523435 A7 _______B7_ 五、發明說明(") 該介電層亦可含有包含編織或彌散於整個有機介電質 之例如亞拉麻纖維、陶質物或玻璃之纖維材料或彌散顆粒 的強化成分。習知之強化成分係典型地爲個別之細絲或顆 粒’大小約1至10微米及/或10微米至數百微米之編織 束。熟習本項技術之人士將理解的是,強化成分可當作粉 狀物引入於有機介電質之中且可爲非相鄰的及非均勻的。 此一複合或強化介電層典型地需要比燒蝕未強化之介電層 所需之能量密度更高的雷射處理。熟習本項技術之人士亦 將理解的是,該等不同之層亦可爲內部非相鄰、非均勻及 非層次化。具有若干層金屬、介電質、及強化材料的堆疊 可比2毫米更厚。 較佳地,通孔直徑之範圍從25到300微米,但雷射系 統10可產生具有直徑小至大約5至25微米或大於1毫米 之通孔。因爲雷射脈波60之較佳的燒蝕點大小其直徑約爲 25至75微米,大於25微米之通孔可藉環鋸法、同心圓處 理法、或螺旋處理法予以處理。熟習於本項技術之人士將 理解的是,通孔可爲諸如方形、矩形、橢圓形、槽形、或 其他表面幾何形狀之非圓形狀。 貫穿孔通孔整潔地且均勻地穿透工件30之所有層及材 料且較佳地顯示可予以忽略之錐形,自頂部至其底部。盲 孔並不穿透所有層及/或材料,通常係駐止於底部導電層 之處。適當選擇雷射参數可允許底部導電層保持不受影響 ,即使是其含有相同於頂部金屬層之材料。 選擇雷射輸出40之參數以助於在各式各樣之金屬、介 13 木纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝 523435 A7 ______B7_____ 五、發明說明(二) 電質及其他材料標靶中達成實質上整潔、連續的鑽孔(亦即 通孔形成),之各式各樣之金屬、介電質及其他材料標靶係 可具有不同的光學吸收性、燒蝕性臨限値、或其他的特徵 以響應紫外線或可見光。較佳之雷射系統輸出40參數包含 :在工作表面處所測量之每個脈波的平均能量比大約120 微焦耳U〗)更大,較佳地大於200微焦耳;小於約50微米 之點大小直徑或空間主軸,較佳地從大約1至50微米;以 及大於約1 kHz之重複率,較佳地大於5 kHz,而更佳地甚 至高於20 kHz ;波長較佳地在大約190至532奈米之間, 且更佳地在大約250奈米與400奈米之間。特定之較佳波 長包含,但未受限於1064奈米、532奈米、355奈米、349 奈米、或266奈米。 雷射輸出40之較佳參數之選擇在於遏止某種熱損壞效 應,其係藉由使用短於約150奈秒(ns)且較佳地從大約40 至90奈秒或更低的臨時脈波寬度。熟習於本項技術之人士 亦將理解的是,雷射脈波60之光點區域大致地爲圓形,但 可稍微地爲橢圓形。較佳的紫外線雷射鑽孔參數揭示於美 國專利第5593606及5841099號中。 盲孔,且特別地具有大直徑之盲孔較佳地藉兩次貫穿 處理予以產生,其中所有標靶區之導電層係在第一次貫穿 處理中去除而接著在第二次貫穿處理之期間以雷射輸出之 能量密度小於導電層燒蝕臨限値來去除所#標靶區之介電 層。在去除所有標靶區之頂部導電層之後,在第二次貫穿 處理期間用於雷射輸出之能量密度可藉散焦雷射光點及/ 14 木紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) n I n )s,v > n n n n n n n _ 523435 A7 _______B7 _—_ 五、發明說明() 或藉增加重複率以及藉減少至雷射泵二極體14之電流而予 以降低。 熟習本項技術之人士將理解的是,盲孔亦可產生於一 單一次之貫穿處理中,其中各標靶之導電及介電層係在定 位系統36移動至下一標靶區31之前去除,單一次之貫穿 處理係較佳地用於產生較小直徑之通孔。在一單一次貫穿 處理中,當雷射脈波60開始去除介電層時,維持適當高的 能量密度,這將會較有效率,但當雷射脈波60淸除掉介電 層且曝露底部導電層,使其開始吸收來自雷射輸出40之熱 量時,則底部導電層最好藉使用較低的能量密度予以保護 。所以,相較於使用單一能量密度以去除介電質,於介電 質去除期間,逐漸地散焦雷射光點或降低泵電流會更快、 更有效率,且將底部金屬層保護得更好。該等及其他用於 通孔鑽孔方法之雷射輸出波形技術詳細地描述於美國專利 申請案第09/823922號以及2001年11月29日所公告之美 國專利公告第US2001-0045419號中,美國專利申請案第 09/823922號之詳細說明及圖式引用於本文中供參考。 熟習於本項技術之人士將明白的是,於不背離本發明 基本原理下,可對上述本發明實施例之細節做許多改變。 因此,本發明之範疇係僅由申請專利範圍予以界定。 15 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) · ί ϋ ϋ n n Ha n 一OJ* n ϋ n an n n n 1 %,The workpiece 30 may be, for example, an IC (Integrated Circuit) chip package, an MCM (Multiple Chip Module), a capacitor, a circuit board, a resistor, or a hybrid or semiconductor microcircuit. For convenience, the workpiece 30 having only four layers will be described below. For example, the top and bottom conductive layers may contain standard metals such as aluminum, copper, gold, molybdenum, nickel, palladium, platinum, silver, titanium, tungsten, metal nitrides, or combinations thereof. The thickness of the conventional metal layer varies, typically between 9 and 36 microns (where 7.8 × 10 · 3 kg of metal is equal to a thickness of about 9 microns) 'but may be thinner or a thickness of 72 microns. Typically, the conductive layer is made of the same material. The dielectric matrix or layer is sandwiched between the conductive layers and may contain, for example, standard organic dielectric materials such as phenylcyclobutane (BCB), cis-dibuteneacetamidotriazine (BT), card boards , Cyanate ester, epoxy, phenolic, polyvinylamine 'polytetrafluoroethylene (PTFE), various polymer alloys or female composition. Conventional organic dielectric layers vary considerably in thickness, but are typically thicker than metal layers. Organic dielectric layers typically have a thickness in the range of about 30 to 400 microns. _ 12 This paper size applies Chinese National Standard (CNS) A4 specification (21 × 297 mm) 523435 A7 _______B7_ 5. Description of the invention (") The dielectric layer may also contain woven or dispersed throughout the organic dielectric Examples include fibrous materials such as ramie fiber, ceramics or glass, or reinforcing components that disperse particles. Conventional reinforcing components are typically woven bundles of individual filaments or particles' having a size of about 1 to 10 microns and / or 10 to hundreds of microns. Those skilled in the art will understand that the strengthening component can be introduced into the organic dielectric as a powder and can be non-adjacent and non-uniform. Such a composite or reinforced dielectric layer typically requires a higher laser density than the energy density required to ablate the unreinforced dielectric layer. Those familiar with this technology will also understand that these different layers can also be internally non-adjacent, non-uniform and non-hierarchical. A stack with several layers of metal, dielectric, and reinforcement can be thicker than 2 mm. Preferably, the diameter of the vias ranges from 25 to 300 microns, but the laser system 10 can produce vias having a diameter as small as about 5 to 25 microns or greater than 1 mm. Because the preferred ablation point size of the laser pulse 60 is about 25 to 75 microns in diameter, through-holes larger than 25 microns can be processed by the ring saw method, concentric circle processing method, or spiral processing method. Those skilled in the art will understand that the through-holes may be non-circular shapes such as square, rectangular, oval, grooved, or other surface geometries. The through-hole through-hole neatly and uniformly penetrates all layers and materials of the workpiece 30 and preferably shows a negligible cone, from the top to its bottom. Blind vias do not penetrate all layers and / or materials and usually reside at the bottom conductive layer. Proper selection of laser parameters allows the bottom conductive layer to remain unaffected, even if it contains the same material as the top metal layer. Select laser output 40 parameters to help in all kinds of metals, paper sizes 13 wood paper standards applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling (This page) 523435 A7 ______B7_____ V. Description of the Invention (II) A variety of metals and dielectric materials have been used to achieve substantially neat and continuous drilling (that is, through-hole formation) in electrical and other material targets. And other material targets can have different optical absorption, ablative threshold, or other characteristics in response to ultraviolet or visible light. The preferred laser system output 40 parameters include: the average energy of each pulse wave measured at the working surface is greater than about 120 microjoules U), preferably greater than 200 microjoules; points smaller than about 50 microns Or spatial major axis, preferably from about 1 to 50 microns; and a repetition rate greater than about 1 kHz, preferably greater than 5 kHz, and even better than 20 kHz; the wavelength is preferably about 190 to 532 nanometers Meters, and more preferably between about 250 and 400 nanometers. Specific preferred wavelengths include, but are not limited to, 1064 nm, 532 nm, 355 nm, 349 nm, or 266 nm. The preferred parameter for laser output 40 is to suppress some thermal damage effect by using temporary pulses shorter than about 150 nanoseconds (ns) and preferably from about 40 to 90 nanoseconds or less width. Those skilled in the art will also understand that the light spot area of the laser pulse 60 is approximately circular, but may be slightly elliptical. Preferred ultraviolet laser drilling parameters are disclosed in U.S. Patent Nos. 5,593,606 and 5,841,099. Blind holes, and especially blind holes with large diameters, are preferably produced by two penetration processes, in which the conductive layer of all target areas is removed in the first penetration process and then during the second penetration process Remove the dielectric layer of the target area with the laser output energy density less than the ablation threshold of the conductive layer. After removing the top conductive layer of all target areas, the energy density used for laser output during the second penetration process can be defocused by the defocused laser light point and / 14 wood paper standards applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the notes on the back before filling out this page) n I n) s, v > nnnnnnn _ 523435 A7 _______B7 _—_ 5. Description of the invention () or increase the repetition rate and reduce it to The current of the laser pump diode 14 is reduced. Those skilled in the art will understand that blind holes can also be generated in a single pass through process, in which the conductive and dielectric layers of each target are removed before the positioning system 36 moves to the next target area 31 A single pass-through treatment is preferably used to create a smaller diameter through hole. In a single pass through process, when the laser pulse 60 starts to remove the dielectric layer, it will be more efficient to maintain a suitably high energy density, but when the laser pulse 60 removes the dielectric layer and is exposed When the bottom conductive layer starts to absorb heat from the laser output 40, the bottom conductive layer is preferably protected by using a lower energy density. Therefore, instead of using a single energy density to remove the dielectric, during the dielectric removal, gradually defocusing the laser light spot or reducing the pump current is faster, more efficient, and the bottom metal layer is better protected. These and other laser output waveform techniques for through-hole drilling methods are described in detail in U.S. Patent Application No. 09/823922 and U.S. Patent Publication No. US2001-0045419 published on November 29, 2001, The detailed description and drawings of US Patent Application No. 09/823922 are incorporated herein by reference. Those skilled in the art will appreciate that many changes can be made to the details of the embodiments of the invention described above without departing from the basic principles of the invention. Therefore, the scope of the present invention is defined only by the scope of patent application. 15 This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) (Please read the notes on the back before filling out this page) · ί ϋ ϋ nn Ha n One OJ * n ϋ n an nnn 1% ,

Claims (1)

c^8895 ABCD 523435 六、申請專利範圍 P! (請先閲讀背面之注意事項再塡寫本頁) 線 之第一及第三時間間隔,其中於該較低電流位準提供電流 至該雷射泵二極體係發生於一第二時間間隔,其中該光束 定位器係於該第二時間間隔期間將輸出位置由該第一標耙 區改變至第二標靶區,其中該第一及第二雷射輸出具有變 化作爲供應至該雷射泵二極體之電流位準之函數的輸出功 率位準,且其中該雷射泵二極體具有一可在整個該第一至 第三時間間隔期間限制可從該雷射二極體傳遞至該固態雷 射之泵功率量的電流感應累積泵容量,使得在該第二時間 間隔期間所供應之較低的電流位準允許在該第一及第三時 間間隔期間所供應之該第一及第二較高電流位準至少其中 之一超過一最大連續波電流位準,用於等於該第一至第三 時間間隔之整個連續波時間間隔期間之該雷射二極體,及 使得當藉在該最大連續波電流位準下之該雷射泵二極體予 以泵之時,在一給定脈波重複率下之該第一及第二雷射輸 出之輸出功率位準至少其中之一超過在該給定脈波重複率 下之一該固態雷射的最大連續波泵之雷射輸出。 3. 如申請專利範圍第2項之方法,其中該雷射系統具 有一變化作爲該等雷射輸出之輸出功率位準之函數的通孔 鑽孔產出量,且該通孔鑽孔產出量會超過當該雷射系統操 作於該最大連續波泵之雷射輸出時該雷射系統之一最大連 續波泵的雷射通孔鑽孔產出量。 4. 如申請專利範圍第2項之方法,其中該第一或第二 較高電流位準係低於該最大連續波電流位準。 5·如申請專利範圍第2項之方法,其中該第一及第三 --2______ 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 523435 ab C8 D8 六、申請專利範圍 時間間隔代表相等的時間量。 (請先閲讀背面之注意事項再填寫本頁) 6. 如申請專利範圍第5項之方法,其中在該第一及第 三時間間隔期間係供應等量的電流。 7. 如申請專利範圍第5項之方法,其中在該第一及第 三時間間隔期間係供應不同量的電流。 8. 如申請專利範圍第2項之方法,其中該第一及第三 時間間隔代表不同的時間量。 9. 如申請專利範圍第8項之方法,其中在該第一及第 三時間間隔期間係供應等量的電流。 10. 如申請專利範圍第8項之方法,其中在該第一及第 三時間間隔期間係供應不同量的電流。 11. 如申請專利範圍第1項之方法,其中於該第一及第 二較高電流位準提供電流至該雷射泵二極體係發生於各別 之第一及第三時間間隔,其中於該較低電流位準提供電流 至該雷射泵二極體係發生於一第二時間間隔,其中該光束 定位器係於該第二時間間隔期間將輸出位置由該第一標靶 區改變至第二標靶區,以及其中該第一及第三時間間隔代 表相等的時間量。 12. 如申請專利範圍第11項之方法,其中在該第一及 第三時間間隔期間係供應等量的電流。 13. 如申請專利範圍第11項之方法,其中在該第一及 3第三時間間隔期間係供應不同量的電流。 14. 如申請專利範圍第1項之方法,其中於該第一及第 二較高電流位準提供電流至該雷射泵二極體係發生於各別 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 523435 A8 驾 D8 六、申請專利範圍 之第一及第三時間間隔,其中於該較低電流位準提供電流 至該雷射泵二極體係發生於一第二時間間隔,其中該光束 定位器係於該第二時間間隔期間將輸出位置由該第一標靶 區改變至第二標紀區,以及其中該第一及第三時間間隔代 表不问的時間量。 15. 如申請專利範圍第14項之方法,其中在該第一及 第三時間間隔期間係供應等量的電流。 16. 如申請專利範圍第14項之方法,其中在該第一及 第三時間間隔期間係供應不同量的電流。 17. 如申請專利範圍第1項之方法,其中該較低電流位 準實質上未包含電流。 18. 如申請專利範圍第1項之方法,其中該較低電流位 準包含充足之電流,以便由該雷射泵二極體產生光學輸出 〇 19. 如申請專利範圍第2項之方法,其中該較低電流位 準包含充足之電流,以便由該雷射泵二極體產生光學輸出 〇 20·如申請專利範圍第1項之方法,其中於該第一及第 二較高電流位準提供電流至該雷射泵二極體係發生於各別 之第一及第三時間間隔,其中於該較低電流位準提供電流 至該雷射泵二極體係發生於一第二時間間隔,其中該光束 >定位器係於該第二時間間隔期間將輸出位置由該第一標革巴 區改變至第二標靶區,以及其中該第一及第二較高電流位 準每一個於每一該第一及第三時間間隔期間包含至少第一 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) --------------------------- (請先閲讀背面之注意事項再塡寫本頁) -Mu 線 523435 cBs8 D8 六、申請專利範圍 及第二不同電流位準値。 21. 如申請專利範圍第20項之方法,其中該第一及第 二電流位準値係施加於該等標耙區內之一單一層材料的處 理期間。 22. 如申請專利範圍第20項之方法,其中該第一電流 位準値比該第二電流位準値更高,該第一電流位準値係施 加於該等標靶區內之一金屬層的處理期間,以及該第二電 流位準値係施加於該等標靶區內之一介電層的處理期間。 23. 如申請專利範圍第2項之方法,其中該第一及第二 較高電流位準每一個於每一該第一及第三時間間隔期間包 含至少第一及第二不同電流位準値。 24·如申請專利範圍第23項之方法,其中該第一及第 二電流位準値係施加於該等標靶區內之一單一層材料的處 理期間。 25·如申請專利範圍第23項之方法,其中該第一電流 位準値比該第二電流位準値更高,該第一電流位準値係施 加於該等標靶區內之一金屬層的處理期間,以及該第二電 流位準値係施加於該等標靶區內之一介電層的處理期間。 26. 如申請專利範圍第1項之方法,其中該Q開關以大 於50 kHz之重複率產生雷射脈波。 27. 如申請專利範圍第2項之方法,其中該Q開關以大 3於50 kHz之重複率產生雷射脈波。 28·如申請專利範圍第1項之方法,其中該第一及第二 雷射輸出包含一短於約400奈米(nm)之波長。 ________________ 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) — (請先閲讀背面之注意事項再填寫本頁) 、1T: 線 523435 骂 D8 六、申請專利範圍 29. 如申請專利範圍第2項之方法,其中該第一及第二 雷射輸出包含一短於約4〇〇奈米(nm)之波長。 30. 如申請專利範圍第1項之方法,其中該第一及第二 雷射輸出包含一由YAG、YLF或YV〇4雷射所發射之波長 之諧波,該等諧波包含532奈米、· 355奈米〃 349奈米或 266奈米。 , 31. 如申請專利範圍第2項之方法,其中該第一及第二 雷射輸出包含一由YAG、YLF或YVCu雷射所發射之波長 之諧波,該等諧波包含532奈米、355奈米、349奈米或 266奈米。 32. 如申請專利範圍第1項之方法,其中於該第一及第 二較高電流位準提供電流至該雷射泵二極體係發生於各別 之第一及第三時間間隔,其中於該較低電流位準提供電流 至該雷射泵二極體係發生於一第二時間間隔,其中該光束 定位器係於該第二時間間隔期間將輸出位置由該第一標靶 區改變至第二標靶區,其中該光束定位器係於該第三時間 間隔之後及一代表不同於該第二時間間隔之時間量之第四 時間間隔期間將輸出位置由該第二標靶區改變至一第三分 離標靶區,以及其中於該第四時間間隔期間該雷射泵二極 體係供應一第二較低電流位準。 33·如申請專利範圍第2項之方法,其中於該第一及第 3二較高電流位準提供電流至該雷射泵二極體係發生於各別 . 之第一及第三時間間隔,其中於該較低電流位準提供電流 至該雷射泵二極體係發生於一第二時間間隔,其中該光束 -—_6____-一 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閲讀背面之注意事項再填寫本頁) -\tx 線 C8 D8 六、申請專利範圍 定位器係於該第二時間間隔期間將輸出位置由該第一標革巴 區改變至第二標靶區,其中該光束定位器係於一代表不同 於該第二時間間隔之時間量之第四時間間隔期間將輸出位 置由該第二標靶區改變至一第三分離標靶區,以及其中於 該第四時間間隔期間該雷射泵二極體係供應一第二較低電 流位準。 34. 如申請專利範圍第32項之方法,其中該較低電流 位準與該第二較低電流位準係爲不同。 35. 如申請專利範圍第32項之方法,其中該較低電流 位準與該第二較低電流位準係爲不同。 36. 如申請專利範圍第1項之方法,其中貫穿超過一標 靶層之通孔係以一雙重貫通操作予以形成。 37. 如申請專利範圍第1項之方法,其中貫穿超過一標 靶層之通孔係以一單一貫通操作予以形成。 38. —種用於加工一工件上多重分離標靶區之至少一層 標靶材料的雷射系統,包含= 一固態雷射,用於產生至少第一及第二雷射輸出,沿 著一光學路徑朝向一輸出位置; 一雷射泵二極體,用於在至少第一及第三非重疊之時 間間隔期間泵該固態雷射; ° 一可變化控制之電源供應器,用於在該第一及第三時 間間隔期間供應一較高電流位準到該雷射泵二極體,及用 於在至少2kHz之重複率下在該第一與第三時間間隔之間之 ___ 7 ____ 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閲讀背面之注意事項再塡寫本頁) 、一 線 iD8 523435 六、申請專利範圍 一第二時間間隔供應一較低電流位準; 一腔內聲光Q開關,用於在該各別之第一及第三時間 間隔期間提供至少兩個雷射脈波於每一該第一及第一雷身寸 輸出之內; 一光束定位器,用於在該第一時間間隔期間定址該第 一雷射輸出之輸出位置朝向一'第一'標祀區,以及在該弟二 間間隔期間定址該第二雷射輸出之輸出位置朝向一第二標 靶區,以及用於在該第二時間間隔期間改變該輸出位置自 該第一標靶區到該第二標靶區;以及 一界面控制,用於直接地或間接地協調該光束定位系 統、該電源供應器、及該Q開關之動作,使得在當產生該 第一及第二雷射輸出時之該第一及第三時間間隔期間,該 電源供應器.會供應較高位準之電流到該雷射泵二極體以及 在當改變該輸出位置時之該第二時間間隔期間供應低位準 之電流。 39.如申請專利範圍第38項之雷射系統,其中該第一 及第二雷射輸出具有變化作爲供應至該雷射泵二極體之電 流位準之函數的功率位準,且其中該雷射泵二極體具有一 可在整個該第一至第三時間間隔期間限制可從該雷射二極 體傳遞至該固體雷射之泵功率量的電流感應累積泵容量, 使得在整個該第二時間間隔期間所供應之較低的電流位準 3允許在該第一及第三時間間隔所供應之較高的電流位準超 過一最大連續波電流位準,用於等於該第一至第三時間間 隔之整個連續波時間間隔期間之該雷射栗二極體’及使得 __ _g —-—— ---- ^紙張尺中國國家標準(CNS)A4規格(210 x 297公愛) (請先閲讀背面之注意事項再塡寫本頁) 、IT: 線 523435 Λ8 B8 C8 D8 、申清專利乾圍 當藉在該最大連續波電流位準下之該雷射泵二極體予以泉 之時’於一給定之重複率下知該第一及第二雷射輸出之功 率位準超過於該給定之重複率下之一該雷射媒體的最大連 不賈波栗之雷射輸出。 40. 如申請專利範圍第39項之雷射系統,其中該雷射 系統具有一變化作爲該等雷射輸出之功率位準之函數的通 孔鑽孔產出量,且該通孔鑽孔產出量會超過當該雷射系統 操作於最大連續波泵之雷射輸出時該雷射系統之一最大連 續波泵的雷射通孔鑽孔產出量。 41. 如申請專利範圍第38項之雷射系統’其中該第一 及第二時間間隔代表相等的時間量。 42. 如申請專利範圍第38項之雷射系統,其中該第一 及第三時間間隔代表不同的時間量。 43·如申請專利範圍第38項之雷射系統,其中在該第 一及第三時間間隔期間所供應之較高電流位準係代表一等 量的電流。 44.如申請專利範圍第38項之雷射系統,其中在該第 一時間間隔期間所供應之較高電流位準係相異於在該第三 時間間隔期間所供應之較高電流位準。 45·如申請專利範圍第38項之雷射系統,其中g亥較低 電流位準實質上未包含電流。 ° 46.如申請專利範圍第38項之雷射系統,其中在每一 該第一及第三時間間隔期間該較高電流位準具有至少第一 及第二不同的電流位準値。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閲讀背面之注意事項再塡寫本頁) 、1T*" 線 523435 六、申請專利範圍 47.如申請專利範圍第46項之雷射系統,其中該第一 及第一電流位準値係施加於該等標IE區內之一單一層材料 的處理期間。 48·如申請專利範圍第46項之雷射系統,其中該第一 電流位準値比該第二電流位準値更高,該第一電流位準値 係施加於該等標靶區內之一金屬層的處理期間,以及該第 二電流位準値係施加於該等標靶區內之一介電層的處理期 間。 49·如申請專利範圍第39項之雷射系統,其中該雷射 系統具有一變化作爲該等雷射輸出之功率位準之函數的通 孔鑽孔產出量,且該通孔鑽孔產出量會超過當該雷射系統 操作於最大連續波泵之雷射輸出時該雷射系統之一最大連 續波泵的雷射通孔鑽孔產出量。 50. 如申請專利範圍第38項之雷射系統,其中該第一 及第二雷射輸出包含一短於約400奈米之波長。 51. 如申請專利範圍第38項之雷射系統,其中該第一 及第二雷射輸出包含一由YAG ' YLF或YV〇4雷射所發射 之波長之諧波,這種諧波包含532奈米、355奈米、349奈 米或266奈米。 52. 如申請專利範圍第38項之雷射系統,其中在一代 表不同於該第二時間間隔之時間量的第四時間間隔期間, "該光束定位器改變該輸出位置自該第二標耙區到一第三分 離標耙區。 53. 如申請專利範圍第38項之雷射系統,其中貫穿超 (請先閲讀背面之注意事項再填寫本頁) ,1T*" 線 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公愛) 523435 合 C8 D8 六、申請專利範圍 過一層之通孔係以一單一貫通操作予以形成。 54. 如申請專利範圍第38項之雷射系統,其中貫穿超 過一標靶層之通孔係以一雙重貫通操作予以形成。 55. 如申請專利範圍第38項之雷射系統,其中在一代 表不同於該第二時間間隔之時間量的第四時間間隔期間, 該光束定位器改變該輸出位置自該第二標靶區到一第三分 離標靶區,其中該第一及第三時間間隔係包含不同的時間 週期,且在該第一時間間隔期間所供應之該較高電流位準 係相異於在該第三時間間隔期間所供應之該較高電流位準 〇 56. 如申請專利範圍第39項之雷射系統,其中,該雷 射輸出包含一波長,其係由該固態雷射所發射之基本波長 之諧波;該較低位準電流具有一非零値;以及該Q開關於 大於50kHz之重複率下產生一雷射脈衝。 (請先閲讀背面之注意事項再塡寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)c ^ 8895 ABCD 523435 VI. Patent application scope P! (Please read the notes on the back before writing this page) The first and third time intervals of the line, in which the current is provided to the laser at the lower current level The pump two-pole system occurs at a second time interval, wherein the beam positioner changes the output position from the first target area to the second target area during the second time interval, wherein the first and second The laser output has an output power level that varies as a function of a current level supplied to the laser pump diode, and wherein the laser pump diode has a voltage level that can be maintained throughout the first to third time intervals. A current-inductive cumulative pump capacity that limits the amount of pump power that can be transferred from the laser diode to the solid-state laser, so that the lower current level supplied during the second time interval allows the At least one of the first and second higher current levels supplied during the three time intervals exceeds a maximum continuous wave current level, which is equal to the total continuous wave time interval during the first to third time intervals. The Ray The laser diode and the first and second laser outputs at a given pulse wave repetition rate when pumped by the laser pump diode at the maximum continuous wave current level At least one of the output power levels exceeds the laser output of the maximum continuous wave pump of the solid-state laser at the given pulse wave repetition rate. 3. The method according to item 2 of the patent application range, wherein the laser system has a through-hole drilling output that varies as a function of the output power levels of the laser outputs, and the through-hole drilling output The amount will exceed the laser through-hole drilling output of one of the largest continuous wave pumps of the laser system when the laser system is operating at the laser output of the largest continuous wave pump. 4. The method according to item 2 of the patent application, wherein the first or second higher current level is lower than the maximum continuous wave current level. 5. If the method of applying for the second item of the patent scope, where the first and third --2 ______ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 523435 ab C8 D8 Time intervals represent equal amounts of time. (Please read the notes on the back before filling out this page) 6. For the method in the scope of patent application No. 5, the same amount of current is supplied during the first and third time intervals. 7. The method according to item 5 of the patent application, wherein different amounts of current are supplied during the first and third time intervals. 8. The method of claim 2 in which the first and third time intervals represent different amounts of time. 9. The method of claim 8 in which the same amount of current is supplied during the first and third time intervals. 10. The method according to item 8 of the patent application, wherein different amounts of current are supplied during the first and third time intervals. 11. The method of claim 1 in which the current is applied to the laser pump two-pole system at the first and second higher current levels occurs at respective first and third time intervals, where The lower current level provides current to the laser pump diode system at a second time interval, wherein the beam positioner changes the output position from the first target area to the second time interval during the second time interval. Two target areas, and wherein the first and third time intervals represent equal amounts of time. 12. The method of claim 11 in which the same amount of current is supplied during the first and third time intervals. 13. The method according to item 11 of the application, wherein different amounts of current are supplied during the first and third time intervals. 14. As the method of applying for item 1 of the patent scope, wherein the current is provided to the laser pump two-pole system at the first and second higher current levels, which occurs in each paper size applicable to China National Standard (CNS) A4 Specifications (210 X 297 mm) 523435 A8 Driving D8 6. The first and third time intervals of the patent application range, in which the current is provided to the laser pump diode system at the lower current level in a second time Interval, wherein the beam positioner changes the output position from the first target area to the second target area during the second time interval, and wherein the first and third time intervals represent an unrelated amount of time. 15. The method of claim 14 in which the same amount of current is supplied during the first and third time intervals. 16. The method according to item 14 of the patent application, wherein different amounts of current are supplied during the first and third time intervals. 17. The method of claim 1, wherein the lower current level does not substantially include current. 18. The method according to item 1 of the patent application, wherein the lower current level contains sufficient current to generate an optical output from the laser pump diode. 19. The method according to item 2 of the patent application, wherein The lower current level contains sufficient current to generate an optical output from the laser pump diode. 20 · As in the method of patent application item 1, the method is provided at the first and second higher current levels Current to the laser pump two-pole system occurs at respective first and third time intervals, wherein supplying current to the laser pump two-pole system at the lower current level occurs at a second time interval, where the The light beam> positioner changes the output position from the first target area to the second target area during the second time interval, and wherein the first and second higher current levels are each at each The first and third time intervals include at least the first paper size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------------ --------- (Please read the notes on the back before writing this page) -Mu 线 52 3435 cBs8 D8 6. Scope of patent application and second different current level. 21. The method of claim 20, wherein the first and second current levels are applied to a single layer of material in the target area. 22. The method of claim 20, wherein the first current level is higher than the second current level, and the first current level is a metal applied to the target areas. The processing period of the layer and the second current level are those of a dielectric layer applied to the target regions. 23. The method of claim 2 in which the first and second higher current levels each include at least first and second different current levels during each of the first and third time intervals. . 24. The method of claim 23, wherein the first and second current levels are applied during the processing of a single layer of material in the target areas. 25. The method of claim 23, wherein the first current level 値 is higher than the second current level ,, the first current level 第一 is applied to a metal in the target areas The processing period of the layer and the second current level are those of a dielectric layer applied to the target regions. 26. The method of claim 1 in which the Q switch generates a laser pulse with a repetition rate greater than 50 kHz. 27. The method according to item 2 of the patent application, wherein the Q switch generates a laser pulse with a repetition rate greater than 3 to 50 kHz. 28. The method of claim 1, wherein the first and second laser outputs include a wavelength shorter than about 400 nanometers (nm). ________________ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) — (Please read the precautions on the back before filling this page), 1T: Line 523435, scold D8 6. Scope of patent application 29. If you apply The method of claim 2 wherein the first and second laser outputs include a wavelength shorter than about 400 nanometers (nm). 30. The method of claim 1 in the patent application range, wherein the first and second laser outputs include a harmonic of a wavelength emitted by a YAG, YLF or YV04 laser, and the harmonics include 532 nm · · 355nm 〃 349nm or 266nm. 31. If the method according to item 2 of the patent application scope, wherein the first and second laser outputs include a harmonic wave of a wavelength emitted by a YAG, YLF or YVCu laser, the harmonics include 355 nm, 349 nm or 266 nm. 32. The method of claim 1 in which the current is applied to the laser pump two-pole system at the first and second higher current levels occurs at respective first and third time intervals, where The lower current level provides current to the laser pump diode system at a second time interval, wherein the beam positioner changes the output position from the first target area to the second time interval during the second time interval. Two target areas, wherein the beam positioner changes the output position from the second target area to one after the third time interval and during a fourth time interval representing a time amount different from the second time interval A third separated target area and wherein the laser pump diode system supplies a second lower current level during the fourth time interval. 33. The method of claim 2 in the scope of patent application, wherein supplying current to the laser pump two-pole system at the first and third higher current levels occurs at the first and third time intervals, respectively, The current supplied to the laser pump diode system at the lower current level occurred at a second time interval, in which the beam --- _6 ____- a paper size applicable to China National Standard (CNS) A4 (210 X 297) (Mm) (Please read the precautions on the back before filling this page)-\ tx line C8 D8 VI. The patent application range locator changes the output position from the first standard zone to the first time zone during the second time interval A second target area, wherein the beam positioner changes the output position from the second target area to a third separate target area during a fourth time interval representing a time amount different from the second time interval And wherein the laser pump diode system supplies a second lower current level during the fourth time interval. 34. The method of claim 32, wherein the lower current level is different from the second lower current level. 35. The method of claim 32, wherein the lower current level is different from the second lower current level. 36. The method of claim 1 in which the through-holes penetrating more than a target layer are formed by a double penetration operation. 37. The method of claim 1 in which the through-holes penetrating more than a target layer are formed by a single penetrating operation. 38. A laser system for processing at least one layer of target material in multiple target areas on a workpiece, comprising: a solid-state laser for generating at least first and second laser outputs, along an optical The path is towards an output position; a laser pump diode is used to pump the solid-state laser during at least first and third non-overlapping time intervals; ° a variable-controllable power supply is used in the first Supply a higher current level to the laser pump diode during the first and third time intervals, and for ___ 7 ____ copies between the first and third time intervals at a repetition rate of at least 2 kHz Paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before writing this page), first-line iD8 523435 6. Patent application scope-second time interval supply-lower Current level; an intra-cavity acousto-optic Q switch for providing at least two laser pulses within each of the first and first laser output during the respective first and third time intervals ; A beam positioner for The output position addressed to the first laser output during a time interval is directed toward a 'first' target area, and the output position addressed to the second laser output during the second interval is directed toward a second target area, And for changing the output position from the first target area to the second target area during the second time interval; and an interface control for directly or indirectly coordinating the beam positioning system and the power supply And the operation of the Q switch, such that during the first and third time intervals when the first and second laser outputs are generated, the power supply will supply a higher level of current to the laser The pump diode and a low level of current are supplied during the second time interval when the output position is changed. 39. The laser system of claim 38, wherein the first and second laser outputs have a power level that varies as a function of a current level supplied to the laser pump diode, and wherein the The laser pump diode has a current-inductive cumulative pump capacity that limits the amount of pump power that can be transferred from the laser diode to the solid laser during the first to third time intervals, so that The lower current level 3 supplied during the second time interval allows the higher current level supplied during the first and third time intervals to exceed a maximum continuous wave current level for equal to the first to The laser diode during the entire continuous wave time interval of the third time interval 'and makes __ _g —-—— ---- ^ paper rule China National Standard (CNS) A4 specification (210 x 297 public love ) (Please read the precautions on the back before writing this page), IT: Line 523435 Λ8 B8 C8 D8, Shen Qing patent dry enclosure should be borrowed by the laser pump diode at the maximum continuous wave current level Spring Time 'knows that first and Two of the laser output power level exceeding the given repetition rate of the laser output is not the most Dalian chestnut one Bighead this laser medium. 40. The laser system of claim 39, wherein the laser system has a through-hole drilling output that varies as a function of the power level of the laser output, and the through-hole drilling output The output will exceed the laser through-hole drilling output of one of the largest continuous wave pumps of the laser system when the laser system is operating at the laser output of the largest continuous wave pump. 41. The laser system of item 38 of the patent application, wherein the first and second time intervals represent equal amounts of time. 42. The laser system of claim 38, wherein the first and third time intervals represent different amounts of time. 43. The laser system of claim 38, wherein the higher current level supplied during the first and third time intervals represents an equal amount of current. 44. The laser system of claim 38, wherein the higher current level supplied during the first time interval is different from the higher current level supplied during the third time interval. 45. The laser system according to item 38 of the patent application, wherein the lower current level does not substantially include current. 46. The laser system of claim 38, wherein the higher current level has at least first and second different current levels 値 during each of the first and third time intervals. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (please read the precautions on the back before writing this page), 1T * " line 523435 6. Application scope 47. If you apply for a patent The laser system of scope item 46, wherein the first and first current levels are not applied during the processing of a single layer of material in the target IE zone. 48. The laser system of claim 46 in which the first current level is higher than the second current level, and the first current level is applied to the target area. The processing period of a metal layer and the second current level are the processing periods of a dielectric layer applied to the target regions. 49. The laser system of claim 39, wherein the laser system has a through-hole drilling output that varies as a function of the power level of the laser output, and the through-hole drilling output The output will exceed the laser through-hole drilling output of one of the largest continuous wave pumps of the laser system when the laser system is operating at the laser output of the largest continuous wave pump. 50. The laser system of claim 38, wherein the first and second laser outputs include a wavelength shorter than about 400 nm. 51. For the laser system of claim 38, wherein the first and second laser outputs include a harmonic wave at a wavelength emitted by a YAG 'YLF or YV〇4 laser, this harmonic wave contains 532 Nano, 355, 349, or 266. 52. The laser system of claim 38, wherein during a fourth time interval representing a different amount of time than the second time interval, " the beam positioner changes the output position from the second target Rake zone to a third separate target zone. 53. If you apply for the laser system in the 38th scope of the patent application, which runs through the super (please read the precautions on the back before filling this page), 1T * " The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210 X 297 public love) 523435 and C8 D8 VI. The through-holes in the scope of patent application are formed by a single through operation. 54. For the laser system of the 38th scope of the patent application, the through hole penetrating through a target layer is formed by a double penetrating operation. 55. As in the laser system of claim 38, during a fourth time interval representing a different amount of time than the second time interval, the beam positioner changes the output position from the second target area. To a third separation target area, wherein the first and third time intervals include different time periods, and the higher current level supplied during the first time interval is different from that at the third time The higher current level supplied during the time interval. 56. For example, the laser system of item 39 of the patent application scope, wherein the laser output includes a wavelength, which is a Harmonics; the lower level current has a non-zero chirp; and the Q-switch generates a laser pulse at a repetition rate greater than 50 kHz. (Please read the notes on the back before copying this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)
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CA2440694A1 (en) 2002-09-19
GB0323441D0 (en) 2003-11-05
CN1714318A (en) 2005-12-28
KR100853254B1 (en) 2008-08-21
JP2004528984A (en) 2004-09-24
DE10296512T5 (en) 2004-04-29
GB2390994A (en) 2004-01-28
CN100351719C (en) 2007-11-28
JP4583711B2 (en) 2010-11-17
WO2002073322B1 (en) 2003-02-20
WO2002073322A1 (en) 2002-09-19
GB2390994B (en) 2004-10-13
KR20030087017A (en) 2003-11-12

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