GB2390994B - Quasi-CW Diode-pumped, solid-state UV laser system and method employing same - Google Patents

Quasi-CW Diode-pumped, solid-state UV laser system and method employing same

Info

Publication number
GB2390994B
GB2390994B GB0323441A GB0323441A GB2390994B GB 2390994 B GB2390994 B GB 2390994B GB 0323441 A GB0323441 A GB 0323441A GB 0323441 A GB0323441 A GB 0323441A GB 2390994 B GB2390994 B GB 2390994B
Authority
GB
United Kingdom
Prior art keywords
quasi
pumped
diode
solid
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0323441A
Other languages
English (en)
Other versions
GB2390994A (en
GB0323441D0 (en
Inventor
Yunlong Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electro Scientific Industries Inc
Original Assignee
Electro Scientific Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electro Scientific Industries Inc filed Critical Electro Scientific Industries Inc
Publication of GB0323441D0 publication Critical patent/GB0323441D0/en
Publication of GB2390994A publication Critical patent/GB2390994A/en
Application granted granted Critical
Publication of GB2390994B publication Critical patent/GB2390994B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0038—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material combined with laser drilling through a metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Lasers (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laser Beam Processing (AREA)
GB0323441A 2001-03-12 2002-03-12 Quasi-CW Diode-pumped, solid-state UV laser system and method employing same Expired - Fee Related GB2390994B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27524601P 2001-03-12 2001-03-12
PCT/US2002/007486 WO2002073322A1 (en) 2001-03-12 2002-03-12 Quasi-cw diode-pumped, solid-state uv laser system and method employing same

Publications (3)

Publication Number Publication Date
GB0323441D0 GB0323441D0 (en) 2003-11-05
GB2390994A GB2390994A (en) 2004-01-28
GB2390994B true GB2390994B (en) 2004-10-13

Family

ID=23051465

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0323441A Expired - Fee Related GB2390994B (en) 2001-03-12 2002-03-12 Quasi-CW Diode-pumped, solid-state UV laser system and method employing same

Country Status (8)

Country Link
JP (1) JP4583711B2 (enExample)
KR (1) KR100853254B1 (enExample)
CN (1) CN100351719C (enExample)
CA (1) CA2440694A1 (enExample)
DE (1) DE10296512T5 (enExample)
GB (1) GB2390994B (enExample)
TW (1) TW523435B (enExample)
WO (1) WO2002073322A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100985018B1 (ko) * 2010-04-06 2010-10-04 주식회사 엘앤피아너스 기판 가공 장치
AU2013380267B2 (en) * 2013-02-27 2017-03-30 Alcon Inc. Laser apparatus and method for laser processing a target material
CN105142853B (zh) * 2013-02-28 2017-07-04 Ipg光子公司 用于加工蓝宝石的激光系统和方法
CN111478173B (zh) * 2020-05-19 2021-03-05 中国科学院福建物质结构研究所 一种1.5微米被动调q激光器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293025A (en) * 1991-08-01 1994-03-08 E. I. Du Pont De Nemours And Company Method for forming vias in multilayer circuits
US5593606A (en) * 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets
US5751585A (en) * 1995-03-20 1998-05-12 Electro Scientific Industries, Inc. High speed, high accuracy multi-stage tool positioning system
US5822211A (en) * 1996-11-13 1998-10-13 International Business Machines Corporation Laser texturing apparatus with dual laser paths having an independently adjusted parameter
US5841099A (en) * 1994-07-18 1998-11-24 Electro Scientific Industries, Inc. Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets
US5943351A (en) * 1997-05-16 1999-08-24 Excel/Quantronix, Inc. Intra-cavity and inter-cavity harmonics generation in high-power lasers
US6188704B1 (en) * 1998-01-26 2001-02-13 Rocky Mountain Instrument Co. Diode-pumped laser drive

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547519B1 (fr) * 1983-06-15 1987-07-03 Snecma Procede et dispositif de percage par laser
US5477043A (en) 1989-10-30 1995-12-19 Symbol Technologies, Inc. Scanning arrangement for the implementation of scanning patterns over indicia by driving the scanning elements in different component directions
DE59006631D1 (de) * 1990-06-05 1994-09-01 Audemars S A R Verfahren und Vorrichtung zum Schneiden von Material.
JPH0529693A (ja) * 1990-09-19 1993-02-05 Hitachi Ltd マルチパルスレーザ発生装置、及びその方法、並びにそのマルチパルスレーザを用いた加工方法
JP3315556B2 (ja) * 1994-04-27 2002-08-19 三菱電機株式会社 レーザ加工装置
JPH09163984A (ja) * 1995-10-12 1997-06-24 Sony Corp 遺伝子組替え用レーザ装置およびこれを用いた遺伝子組替え方法
JP4500374B2 (ja) * 1997-05-27 2010-07-14 ジェイディーエス ユニフエイズ コーポレーション レーザーマーキングシステムおよびエネルギー制御方法
JPH11267867A (ja) * 1998-03-23 1999-10-05 Seiko Epson Corp レーザ加工方法及び装置
US6197133B1 (en) * 1999-02-16 2001-03-06 General Electric Company Short-pulse high-peak laser shock peening
JP2000301372A (ja) * 1999-04-23 2000-10-31 Seiko Epson Corp 透明材料のレーザ加工方法
US6252195B1 (en) * 1999-04-26 2001-06-26 Ethicon, Inc. Method of forming blind holes in surgical needles using a diode pumped Nd-YAG laser

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293025A (en) * 1991-08-01 1994-03-08 E. I. Du Pont De Nemours And Company Method for forming vias in multilayer circuits
US5593606A (en) * 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets
US5841099A (en) * 1994-07-18 1998-11-24 Electro Scientific Industries, Inc. Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets
US5751585A (en) * 1995-03-20 1998-05-12 Electro Scientific Industries, Inc. High speed, high accuracy multi-stage tool positioning system
US5822211A (en) * 1996-11-13 1998-10-13 International Business Machines Corporation Laser texturing apparatus with dual laser paths having an independently adjusted parameter
US5943351A (en) * 1997-05-16 1999-08-24 Excel/Quantronix, Inc. Intra-cavity and inter-cavity harmonics generation in high-power lasers
US6188704B1 (en) * 1998-01-26 2001-02-13 Rocky Mountain Instrument Co. Diode-pumped laser drive

Also Published As

Publication number Publication date
GB2390994A (en) 2004-01-28
WO2002073322A1 (en) 2002-09-19
KR100853254B1 (ko) 2008-08-21
KR20030087017A (ko) 2003-11-12
CN1714318A (zh) 2005-12-28
JP4583711B2 (ja) 2010-11-17
DE10296512T5 (de) 2004-04-29
GB0323441D0 (en) 2003-11-05
CA2440694A1 (en) 2002-09-19
JP2004528984A (ja) 2004-09-24
TW523435B (en) 2003-03-11
CN100351719C (zh) 2007-11-28
WO2002073322B1 (en) 2003-02-20

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100312