CA2365958A1 - Aperiodic longitudinal gratings and optimisation method - Google Patents

Aperiodic longitudinal gratings and optimisation method Download PDF

Info

Publication number
CA2365958A1
CA2365958A1 CA002365958A CA2365958A CA2365958A1 CA 2365958 A1 CA2365958 A1 CA 2365958A1 CA 002365958 A CA002365958 A CA 002365958A CA 2365958 A CA2365958 A CA 2365958A CA 2365958 A1 CA2365958 A1 CA 2365958A1
Authority
CA
Canada
Prior art keywords
grating
aperiodic
apbg
waveguide
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002365958A
Other languages
English (en)
French (fr)
Inventor
Robert Joseph Mears
Michael Charles Parker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atomera Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9905196.3A external-priority patent/GB9905196D0/en
Application filed by Individual filed Critical Individual
Publication of CA2365958A1 publication Critical patent/CA2365958A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G02B6/02057—Optical fibres with cladding with or without a coating comprising gratings
    • G02B6/02076—Refractive index modulation gratings, e.g. Bragg gratings
    • G02B6/0208—Refractive index modulation gratings, e.g. Bragg gratings characterised by their structure, wavelength response
    • G02B6/02085—Refractive index modulation gratings, e.g. Bragg gratings characterised by their structure, wavelength response characterised by the grating profile, e.g. chirped, apodised, tilted, helical
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G02B6/02057—Optical fibres with cladding with or without a coating comprising gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/212—Mach-Zehnder type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G02F1/2252—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure in optical fibres
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31—Digital deflection, i.e. optical switching
    • G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3136—Digital deflection, i.e. optical switching in an optical waveguide structure of interferometric switch type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • G02F1/3517—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam using an interferometer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • G02F1/3521—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam using a directional coupler
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/30—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 grating
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/30—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 grating
    • G02F2201/307—Reflective grating, i.e. Bragg grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Communication System (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
CA002365958A 1999-03-05 2000-03-03 Aperiodic longitudinal gratings and optimisation method Abandoned CA2365958A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GBGB9905196.3A GB9905196D0 (en) 1999-03-05 1999-03-05 Aperiodic gratings
GB9905196.3 1999-03-05
GB9911952.1 1999-05-21
GB9911952A GB2347520B (en) 1999-03-05 1999-05-21 Aperiodic grating optimisation
PCT/GB2000/000768 WO2000054080A2 (en) 1999-03-05 2000-03-03 Aperiodic longitudinal gratings and optimisation method

Publications (1)

Publication Number Publication Date
CA2365958A1 true CA2365958A1 (en) 2000-09-14

Family

ID=26315234

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002365958A Abandoned CA2365958A1 (en) 1999-03-05 2000-03-03 Aperiodic longitudinal gratings and optimisation method

Country Status (7)

Country Link
US (2) US7123792B1 (enExample)
EP (1) EP1163542A1 (enExample)
JP (1) JP2002539467A (enExample)
AU (1) AU2926200A (enExample)
CA (1) CA2365958A1 (enExample)
GB (9) GB2385940B (enExample)
WO (1) WO2000054080A2 (enExample)

Families Citing this family (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6993222B2 (en) * 1999-03-03 2006-01-31 Rj Mears, Llc Optical filter device with aperiodically arranged grating elements
ATE300057T1 (de) * 1999-08-05 2005-08-15 Daniel Levner Synthese von superstrukturgittern mit hilfe von fourier methoden
US7457340B2 (en) * 2002-01-18 2008-11-25 Wisconsin Alumni Research Foundation High coherent power, two-dimensional surface-emitting semiconductor diode array laser
WO2003063305A2 (en) * 2002-01-18 2003-07-31 Wisconsin Alumini Research Foundation High coherent power, two-dimensional surface­emitting semiconductor diode array laser
DE60329855D1 (de) * 2002-06-03 2009-12-10 Mears Technologies Inc Fabry-perot-laser mit wellenlängensteuerung
JP4245995B2 (ja) * 2003-07-02 2009-04-02 株式会社リコー 光ピックアップ及びこれを用いる光情報処理装置
CN1875528B (zh) * 2003-09-03 2010-09-29 宾奥普迪克斯股份有限公司 单纵模激光二极管
US7263258B2 (en) * 2003-09-24 2007-08-28 Brown University Research Foundation Programmable optical grating device and method
GB2418995B (en) * 2004-09-29 2006-08-16 Bookham Technology Plc Apodised binary grating
US7421162B2 (en) * 2005-03-22 2008-09-02 General Electric Company Fiber optic sensing device and method of making and operating the same
SE531353C2 (sv) * 2005-08-17 2009-03-03 Syntune Ab Metod för att framställa ett modulerat gitter för ett optimalt reflektionsspektra
US7408966B2 (en) * 2006-08-18 2008-08-05 Wisconsin Alumni Research Foundation Intersubband quantum box stack lasers
JP5168867B2 (ja) 2006-09-29 2013-03-27 沖電気工業株式会社 波長変換素子
US7859744B2 (en) * 2007-07-27 2010-12-28 Magiq Technologies, Inc. Tunable compact entangled-photon source and QKD system using same
US7414778B1 (en) 2007-10-30 2008-08-19 Corning Incorporated Wavelength conversion devices and fabrication methods for same
JPWO2009081901A1 (ja) * 2007-12-21 2011-05-06 株式会社フジクラ 光導波体及びその製造方法並びにこの光導波体を備えた光デバイス
US7492507B1 (en) 2008-08-15 2009-02-17 Corning Incorporated Wavelength conversion devices and fabrication methods for the same
EP2454619A4 (en) 2009-07-17 2016-01-06 Hewlett Packard Development Co NON PERIODIC FILTER REFLECTORS WITH FOCUSING STRENGTH AND METHOD FOR THE PRODUCTION THEREOF
WO2011037563A1 (en) 2009-09-23 2011-03-31 Hewlett-Packard Development Company, L.P. Optical devices based on diffraction gratings
US8842363B2 (en) 2010-01-29 2014-09-23 Hewlett-Packard Development Company, L.P. Dynamically varying an optical characteristic of light by a sub-wavelength grating
WO2011093893A1 (en) 2010-01-29 2011-08-04 Hewlett-Packard Development Company, L.P. Optical devices based on non-periodic sub-wavelength gratings
WO2011093885A1 (en) 2010-01-29 2011-08-04 Hewlett-Packard Development Company L.P. Vertical-cavity surface-emitting lasers with non-periodic gratings
US8576890B2 (en) 2010-04-26 2013-11-05 Hewlett-Packard Development Company, L.P. Vertical-cavity surface-emitting laser
US8369664B2 (en) 2010-07-30 2013-02-05 Hewlett-Packard Development Company, L.P. Optical apparatus for forming a tunable cavity
JP5777722B2 (ja) 2010-10-29 2015-09-09 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． 小モード体積垂直共振器面発光レーザ
WO2012072886A1 (en) * 2010-12-01 2012-06-07 Epicrystals Oy A wavelength conversion crystal, and a light source comprising the same
GB2493733A (en) * 2011-08-16 2013-02-20 Univ Manchester Tunable laser
US8705584B2 (en) * 2011-11-09 2014-04-22 Corning Incorporated DBR laser diode with symmetric aperiodically shifted grating phase
US9086609B1 (en) * 2012-04-25 2015-07-21 University Of Southern California Mirrorless-oscillation in a waveguide using non-degenerate four-wave mixing
GB201208335D0 (en) * 2012-05-14 2012-06-27 Copner Nigel J Fast optical wavelength conversion
US20160004139A1 (en) * 2013-03-14 2016-01-07 Ramot At Tel-Aviv University Ltd. Tunable nonlinear beam shaping by a non-collinear interaction
CN103558602B (zh) * 2013-08-14 2016-04-06 西北工业大学 一种用于多基地声纳配置方式的模拟退火定位方法
CN103594924A (zh) * 2013-10-16 2014-02-19 南京威宁锐克信息技术有限公司 基于重构-等效啁啾的非对称相移布拉格光栅制备激光器及制法
KR101855023B1 (ko) 2013-11-22 2018-05-04 아토메라 인코포레이티드 정지층을 통한 초격자 펀치를 포함하는 수직 반도체 디바이스 및 관련된 방법
US9406753B2 (en) 2013-11-22 2016-08-02 Atomera Incorporated Semiconductor devices including superlattice depletion layer stack and related methods
EP2908159B1 (en) * 2014-02-13 2016-08-31 Deutsches Elektronen-Synchrotron DESY Chirped dichroic mirror and a source for broadband light pulses
US9716147B2 (en) 2014-06-09 2017-07-25 Atomera Incorporated Semiconductor devices with enhanced deterministic doping and related methods
US9722046B2 (en) 2014-11-25 2017-08-01 Atomera Incorporated Semiconductor device including a superlattice and replacement metal gate structure and related methods
WO2016187038A1 (en) 2015-05-15 2016-11-24 Atomera Incorporated Semiconductor devices with superlattice and punch-through stop (pts) layers at different depths and related methods
WO2016196600A1 (en) 2015-06-02 2016-12-08 Atomera Incorporated Method for making enhanced semiconductor structures in single wafer processing chamber with desired uniformity control
US9558939B1 (en) 2016-01-15 2017-01-31 Atomera Incorporated Methods for making a semiconductor device including atomic layer structures using N2O as an oxygen source
US10109342B2 (en) 2016-05-11 2018-10-23 Atomera Incorporated Dram architecture to reduce row activation circuitry power and peripheral leakage and related methods
US10453945B2 (en) 2016-08-08 2019-10-22 Atomera Incorporated Semiconductor device including resonant tunneling diode structure having a superlattice
US10107854B2 (en) 2016-08-17 2018-10-23 Atomera Incorporated Semiconductor device including threshold voltage measurement circuitry
CA3156196C (en) 2017-01-27 2024-06-25 Teraxion Inc. Optical fiber filter of wideband deleterious light and uses thereof
EP3635789B1 (en) 2017-05-16 2022-08-10 Atomera Incorporated Semiconductor device and method including a superlattice as a gettering layer
WO2018231929A1 (en) 2017-06-13 2018-12-20 Atomera Incorporated Semiconductor device with recessed channel array transistor (rcat) including a superlattice and associated methods
US10109479B1 (en) 2017-07-31 2018-10-23 Atomera Incorporated Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice
EP3669401B1 (en) 2017-08-18 2023-08-02 Atomera Incorporated Manufacturing method for a semiconductor device including the removal of non-monocrystalline stringer adjacent a superlattice-sti interface
CN107749564B (zh) * 2017-11-16 2019-12-13 太原理工大学 高散射掺杂光波导反馈产生混沌光的单片集成激光器芯片
US10608027B2 (en) 2017-12-15 2020-03-31 Atomera Incorporated Method for making CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice
US10396223B2 (en) 2017-12-15 2019-08-27 Atomera Incorporated Method for making CMOS image sensor with buried superlattice layer to reduce crosstalk
US10608043B2 (en) 2017-12-15 2020-03-31 Atomera Incorporation Method for making CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice
US10367028B2 (en) 2017-12-15 2019-07-30 Atomera Incorporated CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice
US10355151B2 (en) 2017-12-15 2019-07-16 Atomera Incorporated CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk
US10529768B2 (en) 2017-12-15 2020-01-07 Atomera Incorporated Method for making CMOS image sensor including pixels with read circuitry having a superlattice
US10615209B2 (en) 2017-12-15 2020-04-07 Atomera Incorporated CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice
US10276625B1 (en) 2017-12-15 2019-04-30 Atomera Incorporated CMOS image sensor including superlattice to enhance infrared light absorption
US10361243B2 (en) 2017-12-15 2019-07-23 Atomera Incorporated Method for making CMOS image sensor including superlattice to enhance infrared light absorption
US10461118B2 (en) 2017-12-15 2019-10-29 Atomera Incorporated Method for making CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk
US10304881B1 (en) 2017-12-15 2019-05-28 Atomera Incorporated CMOS image sensor with buried superlattice layer to reduce crosstalk
US10529757B2 (en) 2017-12-15 2020-01-07 Atomera Incorporated CMOS image sensor including pixels with read circuitry having a superlattice
US10847945B2 (en) * 2018-01-11 2020-11-24 Fujitsu Limited Phase shifter for an optical phase-sensitive amplifier
US10879356B2 (en) 2018-03-08 2020-12-29 Atomera Incorporated Method for making a semiconductor device including enhanced contact structures having a superlattice
US10468245B2 (en) 2018-03-09 2019-11-05 Atomera Incorporated Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
US10727049B2 (en) 2018-03-09 2020-07-28 Atomera Incorporated Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
US10763370B2 (en) 2018-04-12 2020-09-01 Atomera Incorporated Inverted T channel field effect transistor (ITFET) including a superlattice
EP3776073B1 (en) 2018-04-12 2026-07-22 Atomera Incorporated Semiconductor device and method including vertically integrated optical and electronic devices and comprising a superlattice
US10566191B1 (en) 2018-08-30 2020-02-18 Atomera Incorporated Semiconductor device including superlattice structures with reduced defect densities
US10811498B2 (en) 2018-08-30 2020-10-20 Atomera Incorporated Method for making superlattice structures with reduced defect densities
US10818755B2 (en) 2018-11-16 2020-10-27 Atomera Incorporated Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
US10847618B2 (en) 2018-11-16 2020-11-24 Atomera Incorporated Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance
US10580866B1 (en) 2018-11-16 2020-03-03 Atomera Incorporated Semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
US10580867B1 (en) 2018-11-16 2020-03-03 Atomera Incorporated FINFET including source and drain regions with dopant diffusion blocking superlattice layers to reduce contact resistance
US10840335B2 (en) 2018-11-16 2020-11-17 Atomera Incorporated Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance
US10840337B2 (en) 2018-11-16 2020-11-17 Atomera Incorporated Method for making a FINFET having reduced contact resistance
US10854717B2 (en) 2018-11-16 2020-12-01 Atomera Incorporated Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance
US10840336B2 (en) 2018-11-16 2020-11-17 Atomera Incorporated Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods
US10593761B1 (en) 2018-11-16 2020-03-17 Atomera Incorporated Method for making a semiconductor device having reduced contact resistance
US11094818B2 (en) 2019-04-23 2021-08-17 Atomera Incorporated Method for making a semiconductor device including a superlattice and an asymmetric channel and related methods
US10840388B1 (en) 2019-07-17 2020-11-17 Atomera Incorporated Varactor with hyper-abrupt junction region including a superlattice
US10937888B2 (en) 2019-07-17 2021-03-02 Atomera Incorporated Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices
US10825902B1 (en) 2019-07-17 2020-11-03 Atomera Incorporated Varactor with hyper-abrupt junction region including spaced-apart superlattices
US10868120B1 (en) 2019-07-17 2020-12-15 Atomera Incorporated Method for making a varactor with hyper-abrupt junction region including a superlattice
US10879357B1 (en) 2019-07-17 2020-12-29 Atomera Incorporated Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice
US11183565B2 (en) 2019-07-17 2021-11-23 Atomera Incorporated Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods
US10937868B2 (en) 2019-07-17 2021-03-02 Atomera Incorporated Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices
US10825901B1 (en) 2019-07-17 2020-11-03 Atomera Incorporated Semiconductor devices including hyper-abrupt junction region including a superlattice
CN110941046B (zh) * 2019-11-22 2022-04-26 中国科学院微电子研究所 一种soi硅光栅的制作方法
US11437487B2 (en) 2020-01-14 2022-09-06 Atomera Incorporated Bipolar junction transistors including emitter-base and base-collector superlattices
US11302823B2 (en) 2020-02-26 2022-04-12 Atomera Incorporated Method for making semiconductor device including a superlattice with different non-semiconductor material monolayers
US11177351B2 (en) 2020-02-26 2021-11-16 Atomera Incorporated Semiconductor device including a superlattice with different non-semiconductor material monolayers
US11075078B1 (en) 2020-03-06 2021-07-27 Atomera Incorporated Method for making a semiconductor device including a superlattice within a recessed etch
US11469302B2 (en) 2020-06-11 2022-10-11 Atomera Incorporated Semiconductor device including a superlattice and providing reduced gate leakage
US11569368B2 (en) 2020-06-11 2023-01-31 Atomera Incorporated Method for making semiconductor device including a superlattice and providing reduced gate leakage
US11848356B2 (en) 2020-07-02 2023-12-19 Atomera Incorporated Method for making semiconductor device including superlattice with oxygen and carbon monolayers
US12191160B2 (en) 2020-07-02 2025-01-07 Atomera Incorporated Method for making a semiconductor superlattices with different non-semiconductor thermal stabilities
WO2022187462A1 (en) 2021-03-03 2022-09-09 Atomera Incorporated Radio frequency (rf) semiconductor devices including a ground plane layer having a superlattice and associated methods
US11923418B2 (en) 2021-04-21 2024-03-05 Atomera Incorporated Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer
US11810784B2 (en) 2021-04-21 2023-11-07 Atomera Incorporated Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer
TWI852792B (zh) 2021-05-18 2024-08-11 美商安托梅拉公司 含提供金屬功函數調諧之超晶格之半導體元件及相關方法
US11682712B2 (en) 2021-05-26 2023-06-20 Atomera Incorporated Method for making semiconductor device including superlattice with O18 enriched monolayers
US11728385B2 (en) 2021-05-26 2023-08-15 Atomera Incorporated Semiconductor device including superlattice with O18 enriched monolayers
JP7871808B2 (ja) * 2021-05-31 2026-06-09 住友電気工業株式会社 光導波路の作製方法、及び光導波路
US11631584B1 (en) 2021-10-28 2023-04-18 Atomera Incorporated Method for making semiconductor device with selective etching of superlattice to define etch stop layer
US11721546B2 (en) 2021-10-28 2023-08-08 Atomera Incorporated Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms
US12267996B2 (en) 2022-05-04 2025-04-01 Atomera Incorporated DRAM sense amplifier architecture with reduced power consumption and related methods
US12575199B2 (en) 2022-08-23 2026-03-10 Atomera Incorporated Image sensor devices including a superlattice
CN115411612B (zh) * 2022-09-05 2023-08-01 武汉敏芯半导体股份有限公司 窄线宽半导体激光器及其制备方法
US12635122B2 (en) 2022-11-16 2026-05-19 Atomera Incorporated Multi-chip memory system including DRAM chips with integrated comparator arrays and method of operating same
WO2024192097A1 (en) 2023-03-14 2024-09-19 Atomera Incorporated Method for making a radio frequency silicon-on-insulator (rfsoi) wafer including a superlattice
US20240322026A1 (en) 2023-03-24 2024-09-26 Atomera Incorporated Nanostructure transistors with offset source/drain dopant blocking structures including a superlattice
EP4670474A1 (en) 2023-05-08 2025-12-31 Atomera Incorporated DMOS DEVICES COMPRISING A SUPER-GRID AND A FIELD PLATE FOR DRIFT REGION DIFFUSION AND ASSOCIATED PROCESSES
WO2025010258A1 (en) 2023-07-03 2025-01-09 Atomera Incorporated Memory device including a superlattice gettering layer and associated methods

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485128A (en) 1981-11-20 1984-11-27 Chronar Corporation Bandgap control in amorphous semiconductors
US4664960A (en) * 1982-09-23 1987-05-12 Energy Conversion Devices, Inc. Compositionally varied materials and method for synthesizing the materials
US4503541A (en) * 1982-11-10 1985-03-05 The United States Of America As Represented By The Secretary Of The Navy Controlled-linewidth laser source
JPS6127681A (ja) 1984-07-17 1986-02-07 Res Dev Corp Of Japan 超格子構造のチヤネル部をもつ電界効果トランジスタ
US4882609A (en) 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms
JPS61145820A (ja) 1984-12-20 1986-07-03 Seiko Epson Corp 半導体薄膜材料
JPS61220339A (ja) 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体材料特性の制御方法
JPS62219665A (ja) 1986-03-20 1987-09-26 Fujitsu Ltd 超格子薄膜トランジスタ
US4908676A (en) 1987-12-18 1990-03-13 Bio-Recovery Systems, Inc. Sensors for dissolved substances in fluids
US5245474A (en) 1988-03-22 1993-09-14 Compagnie Generale D'electricite Electromagnetic filter device
FR2629217B1 (fr) * 1988-03-22 1993-09-17 Comp Generale Electricite Dispositif de filtrage electromagnetique
US5289308A (en) * 1991-12-20 1994-02-22 Akzo N.V. Method of making a frequency doubling structure in an optically non-linear medium
GB9200616D0 (en) * 1992-01-10 1992-03-11 British Telecomm An optical grating and a method of fabricating an optical grating
US5561558A (en) 1993-10-18 1996-10-01 Matsushita Electric Industrial Co., Ltd. Diffractive optical device
US5606177A (en) 1993-10-29 1997-02-25 Texas Instruments Incorporated Silicon oxide resonant tunneling diode structure
US5388173A (en) * 1993-12-20 1995-02-07 United Technologies Corporation Method and apparatus for forming aperiodic gratings in optical fibers
EP0712012A1 (en) 1994-11-09 1996-05-15 International Business Machines Corporation Authentication label and authenticating pattern incorporating diffracting structure and method of fabricating them
FR2725527B1 (fr) 1994-10-10 1996-12-20 Talneau Anne Filtre optique pour plusieurs longueurs d'ondes guidees
DE69631098D1 (de) 1995-08-03 2004-01-29 Hitachi Europ Ltd Halbleiterstrukturen
US5942956A (en) * 1996-01-18 1999-08-24 Purdue Research Foundation Design method for compact waveguide mode control and converter devices
EP0843361A1 (en) 1996-11-15 1998-05-20 Hitachi Europe Limited Memory device
US6081513A (en) 1997-02-10 2000-06-27 At&T Corp. Providing multimedia conferencing services over a wide area network interconnecting nonguaranteed quality of services LANs
US5815307A (en) * 1997-03-26 1998-09-29 The Board Of Trustees Of The Leland Stanford Junior University Aperiodic quasi-phasematching gratings for chirp adjustments and frequency conversion of ultra-short pulses
US5867304A (en) * 1997-04-25 1999-02-02 Imra America, Inc. Use of aperiodic quasi-phase-matched gratings in ultrashort pulse sources
US6404956B1 (en) * 1997-10-02 2002-06-11 3M Intellectual Properties Company Long-length continuous phase Bragg reflectors in optical media
US6255150B1 (en) 1997-10-23 2001-07-03 Texas Instruments Incorporated Use of crystalline SiOx barriers for Si-based resonant tunneling diodes
US6376337B1 (en) 1997-11-10 2002-04-23 Nanodynamics, Inc. Epitaxial SiOx barrier/insulation layer
JPH11233898A (ja) * 1997-12-03 1999-08-27 Canon Inc 分布帰還型半導体レーザとその駆動方法
CA2228683C (en) 1998-02-20 2002-05-14 Ivan Avrutsky Superimposed grating wdm tunable lasers
JP3854731B2 (ja) 1998-03-30 2006-12-06 シャープ株式会社 微細構造の製造方法
US6888175B1 (en) 1998-05-29 2005-05-03 Massachusetts Institute Of Technology Compound semiconductor structure with lattice and polarity matched heteroepitaxial layers
US6249624B1 (en) * 1998-12-04 2001-06-19 Cidra Corporation Method and apparatus for forming a Bragg grating with high intensity light
US6501591B1 (en) * 1999-01-07 2002-12-31 Northwestern University Tunable fiber optic parametric oscillator
DE60042666D1 (de) 1999-01-14 2009-09-17 Panasonic Corp Halbleiterbauelement und Verfahren zu dessen Herstellung
US6350993B1 (en) 1999-03-12 2002-02-26 International Business Machines Corporation High speed composite p-channel Si/SiGe heterostructure for field effect devices
GB2354110A (en) 1999-09-08 2001-03-14 Univ Bristol Ridge waveguide lasers
US6501092B1 (en) 1999-10-25 2002-12-31 Intel Corporation Integrated semiconductor superlattice optical modulator
US6322938B1 (en) 2000-05-22 2001-11-27 The United States Of America As Represented By The Secretary Of The Air Force Nanolithography for multi-passband grating filters
AU2003222003A1 (en) 2002-03-14 2003-09-29 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates

Also Published As

Publication number Publication date
US20020196826A1 (en) 2002-12-26
GB2385981A (en) 2003-09-03
GB2385980A (en) 2003-09-03
GB2385940B (en) 2003-10-22
GB0312805D0 (en) 2003-07-09
GB2385944A (en) 2003-09-03
EP1163542A1 (en) 2001-12-19
GB2386254A (en) 2003-09-10
JP2002539467A (ja) 2002-11-19
GB2385941A (en) 2003-09-03
GB2385945B (en) 2003-11-05
US7123792B1 (en) 2006-10-17
GB0312816D0 (en) 2003-07-09
GB2385943B (en) 2003-11-05
US6741624B2 (en) 2004-05-25
GB0312808D0 (en) 2003-07-09
GB2385944B (en) 2003-10-29
GB0312813D0 (en) 2003-07-09
WO2000054080A2 (en) 2000-09-14
GB2385940A (en) 2003-09-03
GB0312806D0 (en) 2003-07-09
GB2385945A (en) 2003-09-03
GB0312807D0 (en) 2003-07-09
GB2385941B (en) 2003-10-22
WO2000054080A3 (en) 2000-12-14
GB2385713B (en) 2003-10-15
GB2385981B (en) 2003-11-05
GB0312804D0 (en) 2003-07-09
GB2385980B (en) 2003-10-29
GB0312809D0 (en) 2003-07-09
GB2385713A (en) 2003-08-27
AU2926200A (en) 2000-09-28
GB0312810D0 (en) 2003-07-09
GB2385943A (en) 2003-09-03

Similar Documents

Publication Publication Date Title
US7123792B1 (en) Configurable aperiodic grating device
GB2347520A (en) Aperiodic gratings
Tavousi et al. Application of photonic crystal ring resonator nonlinear response for full-optical tunable add–drop filtering
Mookherjea et al. Coupled resonator optical waveguides
US8837036B2 (en) Dynamic terahertz switch using periodic corrugated structures
Chhipa et al. Realization of all-optical logic gates using a single design of 2D photonic band gap structure by square ring resonator
Ziolkowski et al. FDTD analysis of PBG waveguides, power splitters and switches
Valagiannopoulos et al. Angular memory of photonic metasurfaces
Kremer et al. Topological effects in integrated photonic waveguide structures
Lourtioz et al. Toward controllable photonic crystals for centimeter-and millimeter-wave devices
Syahriar et al. The design of mode evolution couplers
US7428348B2 (en) Electro-optical switching using coupled photonic crystal waveguides
Mehrez et al. High data rate 4x2 photonic crystal encoder using irregular hexagon ring resonator
Tu et al. Coupled fano resonators
Ogusu et al. Optical bistability in photonic crystal microrings with nonlinear dielectric materials
Schwelb A decade of progress in microring and microdisk based photonic circuits: a personal selection
Okayama et al. Wavelength filter using twin one‐dimensional photonic crystal cavity silicon waveguides
Cada Nonlinear optical devices
Pawar et al. Optical limiting in nonlinear fiber bragg grating
Hoang et al. Induced high-order resonance linewidth shrinking with multiple coupled resonators in silicon-organic hybrid slotted two-dimensional photonic crystals for reduced optical switching power in bistable devices
Tseng et al. Coexistence of a self-induced transparency soliton and a Bragg soliton
Wang et al. Chalcogenide As2S3 sidewall Bragg gratings integrated on LiNbO3 substrate
Hammer et al. Modeling of grating assisted standing wave, microresonators for filter applications in integrated optics
Scheuer et al. The Serpentine Optical Waveguide: engineering the dispersion relations and the stopped light points
Nousios Integrated nanophotonic elements utilizing two-dimensional materials for switching applications and light sources

Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued