CA2359710C - Epitaxial thin films - Google Patents
Epitaxial thin films Download PDFInfo
- Publication number
- CA2359710C CA2359710C CA002359710A CA2359710A CA2359710C CA 2359710 C CA2359710 C CA 2359710C CA 002359710 A CA002359710 A CA 002359710A CA 2359710 A CA2359710 A CA 2359710A CA 2359710 C CA2359710 C CA 2359710C
- Authority
- CA
- Canada
- Prior art keywords
- epitaxial
- ccvd
- thin films
- films
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 239000003990 capacitor Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 80
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 30
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 46
- 239000012528 membrane Substances 0.000 abstract description 44
- 239000003792 electrolyte Substances 0.000 abstract description 41
- 239000000446 fuel Substances 0.000 abstract description 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 27
- 229910052760 oxygen Inorganic materials 0.000 abstract description 27
- 239000001301 oxygen Substances 0.000 abstract description 27
- 239000001257 hydrogen Substances 0.000 abstract description 24
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 22
- 239000007789 gas Substances 0.000 abstract description 19
- 239000002887 superconductor Substances 0.000 abstract description 16
- 238000000926 separation method Methods 0.000 abstract description 13
- 239000007787 solid Substances 0.000 abstract description 10
- 239000003989 dielectric material Substances 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000000919 ceramic Substances 0.000 abstract description 5
- 238000005137 deposition process Methods 0.000 abstract description 5
- 238000000280 densification Methods 0.000 abstract description 2
- 230000001419 dependent effect Effects 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 67
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 42
- 238000000151 deposition Methods 0.000 description 42
- 230000008569 process Effects 0.000 description 35
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 35
- 230000008021 deposition Effects 0.000 description 32
- 238000000576 coating method Methods 0.000 description 30
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 16
- 239000002243 precursor Substances 0.000 description 16
- 229910002370 SrTiO3 Inorganic materials 0.000 description 14
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 12
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000001294 propane Substances 0.000 description 8
- 229910052712 strontium Inorganic materials 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- -1 yttria-stabiliwd ZY% Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910002119 nickel–yttria stabilized zirconia Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 4
- 238000000889 atomisation Methods 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 4
- 239000002001 electrolyte material Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910002244 LaAlO3 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 239000012707 chemical precursor Substances 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000004320 controlled atmosphere Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- 239000003345 natural gas Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 235000015096 spirit Nutrition 0.000 description 3
- DLWBHRIWCMOQKI-UHFFFAOYSA-L strontium;2-ethylhexanoate Chemical compound [Sr+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O DLWBHRIWCMOQKI-UHFFFAOYSA-L 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- FFQALBCXGPYQGT-UHFFFAOYSA-N 2,4-difluoro-5-(trifluoromethyl)aniline Chemical compound NC1=CC(C(F)(F)F)=C(F)C=C1F FFQALBCXGPYQGT-UHFFFAOYSA-N 0.000 description 2
- 229910002080 8 mol% Y2O3 fully stabilized ZrO2 Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 2
- VJFFDDQGMMQGTQ-UHFFFAOYSA-L barium(2+);2-ethylhexanoate Chemical compound [Ba+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O VJFFDDQGMMQGTQ-UHFFFAOYSA-L 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000011195 cermet Substances 0.000 description 2
- 239000003245 coal Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000007735 ion beam assisted deposition Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000011165 process development Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910014031 strontium zirconium oxide Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229910002761 BaCeO3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910002260 LaCuO3 Inorganic materials 0.000 description 1
- 229910018279 LaSrMnO Inorganic materials 0.000 description 1
- 101100400546 Mus musculus Matn1 gene Proteins 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003408 SrCeO3 Inorganic materials 0.000 description 1
- BQENXCOZCUHKRE-UHFFFAOYSA-N [La+3].[La+3].[O-][Mn]([O-])=O.[O-][Mn]([O-])=O.[O-][Mn]([O-])=O Chemical compound [La+3].[La+3].[O-][Mn]([O-])=O.[O-][Mn]([O-])=O.[O-][Mn]([O-])=O BQENXCOZCUHKRE-UHFFFAOYSA-N 0.000 description 1
- OGMPADNUHIPKDS-UHFFFAOYSA-N [Sr++].[O-][Mn]([O-])=O Chemical compound [Sr++].[O-][Mn]([O-])=O OGMPADNUHIPKDS-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229940075894 denatured ethanol Drugs 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- PAKYGWMMHVXSFM-UHFFFAOYSA-N ethane ethene Chemical compound CC.CC.CC.C=C.C=C.C=C PAKYGWMMHVXSFM-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002078 fully stabilized zirconia Inorganic materials 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000001566 impedance spectroscopy Methods 0.000 description 1
- 238000001453 impedance spectrum Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000002663 nebulization Methods 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000010963 scalable process Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000629 steam reforming Methods 0.000 description 1
- NDTZMEKCGHOCBU-UHFFFAOYSA-N strontium;dioxido(dioxo)manganese Chemical compound [Sr+2].[O-][Mn]([O-])(=O)=O NDTZMEKCGHOCBU-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Ceramic Capacitors (AREA)
- Inert Electrodes (AREA)
- Fuel Cell (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11551999P | 1999-01-12 | 1999-01-12 | |
| US60/115,519 | 1999-01-12 | ||
| PCT/US2000/000824 WO2000042621A2 (en) | 1999-01-12 | 2000-01-12 | Epitaxial thin films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2359710A1 CA2359710A1 (en) | 2000-07-20 |
| CA2359710C true CA2359710C (en) | 2008-09-02 |
Family
ID=22361922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002359710A Expired - Fee Related CA2359710C (en) | 1999-01-12 | 2000-01-12 | Epitaxial thin films |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1145252A2 (de) |
| JP (2) | JP2002535224A (de) |
| CN (1) | CN100385696C (de) |
| AU (1) | AU774828B2 (de) |
| CA (1) | CA2359710C (de) |
| WO (1) | WO2000042621A2 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003229677B2 (en) * | 2002-04-23 | 2008-10-09 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | High-temperature solid electrolyte fuel cell comprising a composite of nanoporous thin-film electrodes and a structured electrolyte |
| CN100365740C (zh) * | 2006-04-27 | 2008-01-30 | 西南交通大学 | 一种高温超导涂层导体的缓冲层 |
| DE102007024166B4 (de) * | 2007-05-24 | 2011-01-05 | Zenergy Power Gmbh | Verfahren zum Bearbeiten eines Metallsubstrats und Verwendung dessen für einen Hochtemperatur-Supraleiter |
| JP5376500B2 (ja) * | 2008-12-04 | 2013-12-25 | 株式会社ノリタケカンパニーリミテド | 酸素イオン伝導性セラミック膜材およびその製造方法 |
| CN102039264A (zh) * | 2009-10-21 | 2011-05-04 | 正峰新能源股份有限公司 | 非真空铜铟镓硒薄膜密实方法 |
| CN102804434A (zh) * | 2010-03-26 | 2012-11-28 | 俄亥俄大学 | 通过电荷转移设计制造超薄分子超导体 |
| EP2426684A1 (de) * | 2010-09-02 | 2012-03-07 | Mitsubishi Materials Corporation | Zusammensetzung zur Bildung einer dielektrischen Dünnschicht, Verfahren zur Bildung einer dielektrischen Dünnschicht und durch das Verfahren gebildete dielektrische Dünnschicht |
| WO2014181526A1 (ja) | 2013-05-07 | 2014-11-13 | パナソニックＩｐマネジメント株式会社 | プロトン伝導体およびプロトン伝導デバイス |
| CN109234679B (zh) * | 2018-08-31 | 2020-06-12 | 内蒙古科技大学 | 一种双层pnzst钙钛矿反铁电薄膜及其制备方法 |
| CN114774844A (zh) * | 2022-03-31 | 2022-07-22 | 清华大学 | 在原子级别调控薄膜平整表面成分的方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3822904A1 (de) * | 1988-07-06 | 1990-01-11 | Siemens Ag | Josephson-element mit oxidkeramischem supraleitermaterial und verfahren zur herstellung des elements |
| US5027253A (en) * | 1990-04-09 | 1991-06-25 | Ibm Corporation | Printed circuit boards and cards having buried thin film capacitors and processing techniques for fabricating said boards and cards |
| JPH05299584A (ja) * | 1992-02-21 | 1993-11-12 | Toshiba Corp | 薄膜容量素子及び半導体記憶装置 |
| JPH07283069A (ja) * | 1994-04-07 | 1995-10-27 | Murata Mfg Co Ltd | 誘電体薄膜およびその製造方法 |
| JPH0864216A (ja) * | 1994-08-25 | 1996-03-08 | Tonen Corp | 酸素イオン導電体薄膜及びその製造方法 |
| US5741377A (en) * | 1995-04-10 | 1998-04-21 | Martin Marietta Energy Systems, Inc. | Structures having enhanced biaxial texture and method of fabricating same |
| JPH09221393A (ja) * | 1996-02-13 | 1997-08-26 | Tdk Corp | 鉛含有ペロブスカイト型強誘電体単結晶膜及びその製造方法 |
| JP3724049B2 (ja) * | 1996-04-17 | 2005-12-07 | 株式会社村田製作所 | 薄膜コンデンサの製造方法 |
| JPH09321361A (ja) * | 1996-05-27 | 1997-12-12 | Tdk Corp | 圧電振動部品及びその製造方法 |
-
2000
- 2000-01-12 WO PCT/US2000/000824 patent/WO2000042621A2/en not_active Application Discontinuation
- 2000-01-12 CA CA002359710A patent/CA2359710C/en not_active Expired - Fee Related
- 2000-01-12 CN CNB008045860A patent/CN100385696C/zh not_active Expired - Fee Related
- 2000-01-12 EP EP00921311A patent/EP1145252A2/de not_active Withdrawn
- 2000-01-12 AU AU41656/00A patent/AU774828B2/en not_active Ceased
- 2000-01-12 JP JP2000594127A patent/JP2002535224A/ja active Pending
-
2010
- 2010-07-23 JP JP2010166139A patent/JP2011044705A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011044705A (ja) | 2011-03-03 |
| AU4165600A (en) | 2000-08-01 |
| AU774828B2 (en) | 2004-07-08 |
| JP2002535224A (ja) | 2002-10-22 |
| EP1145252A2 (de) | 2001-10-17 |
| CA2359710A1 (en) | 2000-07-20 |
| CN100385696C (zh) | 2008-04-30 |
| WO2000042621A3 (en) | 2001-08-02 |
| WO2000042621A2 (en) | 2000-07-20 |
| CN1526172A (zh) | 2004-09-01 |
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