CA2359710A1 - Epitaxial thin films - Google Patents
Epitaxial thin films Download PDFInfo
- Publication number
- CA2359710A1 CA2359710A1 CA002359710A CA2359710A CA2359710A1 CA 2359710 A1 CA2359710 A1 CA 2359710A1 CA 002359710 A CA002359710 A CA 002359710A CA 2359710 A CA2359710 A CA 2359710A CA 2359710 A1 CA2359710 A1 CA 2359710A1
- Authority
- CA
- Canada
- Prior art keywords
- thin films
- epitaxial thin
- capacitors
- disclosed
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 5
- 239000003990 capacitor Substances 0.000 abstract 3
- 239000012528 membrane Substances 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000003989 dielectric material Substances 0.000 abstract 2
- 239000003792 electrolyte Substances 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 2
- 239000002887 superconductor Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000000280 densification Methods 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000000446 fuel Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Fuel Cell (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Ceramic Capacitors (AREA)
- Inert Electrodes (AREA)
Abstract
Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal grain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11551999P | 1999-01-12 | 1999-01-12 | |
| US60/115,519 | 1999-01-12 | ||
| PCT/US2000/000824 WO2000042621A2 (en) | 1999-01-12 | 2000-01-12 | Epitaxial thin films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2359710A1 true CA2359710A1 (en) | 2000-07-20 |
| CA2359710C CA2359710C (en) | 2008-09-02 |
Family
ID=22361922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002359710A Expired - Fee Related CA2359710C (en) | 1999-01-12 | 2000-01-12 | Epitaxial thin films |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1145252A2 (en) |
| JP (2) | JP2002535224A (en) |
| CN (1) | CN100385696C (en) |
| AU (1) | AU774828B2 (en) |
| CA (1) | CA2359710C (en) |
| WO (1) | WO2000042621A2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1497884A2 (en) * | 2002-04-23 | 2005-01-19 | Frauenhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | High-temperature solid electrolyte fuel cell comprising a composite of nanoporous thin-film electrodes and a structured electrolyte |
| CN100365740C (en) * | 2006-04-27 | 2008-01-30 | 西南交通大学 | Buffer layer of high temp superconductive coated conductor |
| DE102007024166B4 (en) | 2007-05-24 | 2011-01-05 | Zenergy Power Gmbh | A method of processing a metal substrate and using it for a high temperature superconductor |
| JP5376500B2 (en) * | 2008-12-04 | 2013-12-25 | 株式会社ノリタケカンパニーリミテド | Oxygen ion conductive ceramic membrane material and manufacturing method thereof |
| CN102039264A (en) * | 2009-10-21 | 2011-05-04 | 正峰新能源股份有限公司 | Non-vacuum CIGS (Copper Indium Gallium Selenium) film densification method |
| CN102804434A (en) * | 2010-03-26 | 2012-11-28 | 俄亥俄大学 | Engineering of an ultra-thin molecular superconductor by charge transfer |
| EP2426684A1 (en) | 2010-09-02 | 2012-03-07 | Mitsubishi Materials Corporation | Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method |
| JP5720001B1 (en) | 2013-05-07 | 2015-05-20 | パナソニックＩｐマネジメント株式会社 | Proton conductor and proton conducting device |
| CN109234679B (en) * | 2018-08-31 | 2020-06-12 | 内蒙古科技大学 | Double-layer PNZST perovskite antiferroelectric film and preparation method thereof |
| CN114774844A (en) * | 2022-03-31 | 2022-07-22 | 清华大学 | Method for regulating and controlling flat surface components of thin film at atomic level |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3822904A1 (en) * | 1988-07-06 | 1990-01-11 | Siemens Ag | JOSEPHSON ELEMENT WITH OXIDE-CERAMIC SUPER LADDER MATERIAL AND METHOD FOR PRODUCING THE ELEMENT |
| US5027253A (en) * | 1990-04-09 | 1991-06-25 | Ibm Corporation | Printed circuit boards and cards having buried thin film capacitors and processing techniques for fabricating said boards and cards |
| JPH05299584A (en) * | 1992-02-21 | 1993-11-12 | Toshiba Corp | Thin film capacitor element and semiconductor memory device |
| JPH07283069A (en) * | 1994-04-07 | 1995-10-27 | Murata Mfg Co Ltd | Dielectric thin film and production thereof |
| JPH0864216A (en) * | 1994-08-25 | 1996-03-08 | Tonen Corp | Oxygen ion conductor thin film and manufacture thereof |
| US5741377A (en) * | 1995-04-10 | 1998-04-21 | Martin Marietta Energy Systems, Inc. | Structures having enhanced biaxial texture and method of fabricating same |
| JPH09221393A (en) * | 1996-02-13 | 1997-08-26 | Tdk Corp | Lead-containing perovskite type ferroelectric single crystal film and its production |
| JP3724049B2 (en) * | 1996-04-17 | 2005-12-07 | 株式会社村田製作所 | Thin film capacitor manufacturing method |
| JPH09321361A (en) * | 1996-05-27 | 1997-12-12 | Tdk Corp | Piezoelectric vibrator component and manufacture thereof |
-
2000
- 2000-01-12 WO PCT/US2000/000824 patent/WO2000042621A2/en not_active Application Discontinuation
- 2000-01-12 AU AU41656/00A patent/AU774828B2/en not_active Ceased
- 2000-01-12 EP EP00921311A patent/EP1145252A2/en not_active Withdrawn
- 2000-01-12 CN CNB008045860A patent/CN100385696C/en not_active Expired - Fee Related
- 2000-01-12 CA CA002359710A patent/CA2359710C/en not_active Expired - Fee Related
- 2000-01-12 JP JP2000594127A patent/JP2002535224A/en active Pending
-
2010
- 2010-07-23 JP JP2010166139A patent/JP2011044705A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002535224A (en) | 2002-10-22 |
| AU774828B2 (en) | 2004-07-08 |
| JP2011044705A (en) | 2011-03-03 |
| CN1526172A (en) | 2004-09-01 |
| CA2359710C (en) | 2008-09-02 |
| AU4165600A (en) | 2000-08-01 |
| EP1145252A2 (en) | 2001-10-17 |
| WO2000042621A2 (en) | 2000-07-20 |
| CN100385696C (en) | 2008-04-30 |
| WO2000042621A3 (en) | 2001-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Peng et al. | BaZr0. 8Y0. 2O3− δ electrolyte with and without ZnO sintering aid: Preparation and characterization | |
| Lyagaeva et al. | BaCe0. 5Zr0. 3Y0. 2–xYbxO3–δ proton-conducting electrolytes for intermediate-temperature solid oxide fuel cells | |
| Hart et al. | Functionally graded composite cathodes for solid oxide fuel cells | |
| EP0476808B1 (en) | Process for producing a composite body and use in a solid oxide fuel cell | |
| JP5022228B2 (en) | Electrolyte sheet with corrugated pattern | |
| EP0439938B1 (en) | Method of electrode fabrication for solid oxide electrochemical cells | |
| JP2012221946A (en) | Solid oxide fuel cell including nanostructure composite air electrode and manufacturing method therefor | |
| Shi et al. | Wet powder spraying fabrication and performance optimization of IT-SOFCs with thin-film ScSZ electrolyte | |
| Mehta et al. | Two-layer fuel cell electrolyte structure by sol-gel processing | |
| US20090011315A1 (en) | Thin-Film Composite and a Glass Ceramic Substrate Used in a Miniaturized Electrochemical Device | |
| CA2359710A1 (en) | Epitaxial thin films | |
| Okumura et al. | Development of thermal spraying-sintering technology for solid oxide fuel cells | |
| La O et al. | Microstructural features of RF-sputtered SOFC anode and electrolyte materials | |
| KR20110074528A (en) | Electrolyte for an sofc battery, and method of making same | |
| KR20170025739A (en) | Solid oxide fuel cell and method for manufacturing the same | |
| Antunes et al. | YSZ/Al2O3 multilayer thick films deposited by spin coating using ceramic suspensions on Al2O3 polycrystalline substrate | |
| BR0112505A (en) | Crystalline thin films with reduced grain thickness | |
| JP2005503246A (en) | Oxide ion conductive ceramic membrane structure / microstructure, use to separate oxygen from air | |
| KR20140043039A (en) | Method for producing solid oxide fuel cells having a cathode-electrolyte-anode unit borne by a metal substrate, and use of said solid oxide fuel cells | |
| DE102013008472A1 (en) | Multi-layered layer arrangement for a solid electrolyte | |
| Wang et al. | Solid oxide fuel cells with (La, Sr)(Ga, Mg) O3-δ electrolyte film deposited by radio-frequency magnetron sputtering | |
| Mücke et al. | Preparation of functional layers for anode-supported solid oxide fuel cells by the reverse roll coating process | |
| Wang et al. | Solid oxide fuel cells with YSZ-BNO Bi-layer electrolyte film deposited by magnetron sputtering | |
| JPH076768A (en) | Nickel-scandium stabilized zirconia group cermet fuel electrode for solid electrolyte fuel cell | |
| JPH0652869A (en) | Solid electrolyte film of fuel cell and manufacture thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |
Effective date: 20200113 |