WO2000042621A3 - Epitaxial thin films - Google Patents

Epitaxial thin films Download PDF

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Publication number
WO2000042621A3
WO2000042621A3 PCT/US2000/000824 US0000824W WO0042621A3 WO 2000042621 A3 WO2000042621 A3 WO 2000042621A3 US 0000824 W US0000824 W US 0000824W WO 0042621 A3 WO0042621 A3 WO 0042621A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin films
epitaxial thin
capacitors
disclosed
epitaxial
Prior art date
Application number
PCT/US2000/000824
Other languages
French (fr)
Other versions
WO2000042621A2 (en
Inventor
Andrew T Hunt
Girish Deshpande
Donald Cousins
Tzyy-Jiuan Jan Hwang
Wen-Yi Lin
Shara S Shoup
Original Assignee
Microcoating Technologies Inc
Andrew T Hunt
Girish Deshpande
Donald Cousins
Hwang Tzyy Jiuan Jan
Lin Wen Yi
Shara S Shoup
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microcoating Technologies Inc, Andrew T Hunt, Girish Deshpande, Donald Cousins, Hwang Tzyy Jiuan Jan, Lin Wen Yi, Shara S Shoup filed Critical Microcoating Technologies Inc
Priority to US09/889,237 priority Critical patent/US7033637B1/en
Priority to AU41656/00A priority patent/AU774828B2/en
Priority to CA002359710A priority patent/CA2359710C/en
Priority to JP2000594127A priority patent/JP2002535224A/en
Priority to EP00921311A priority patent/EP1145252A2/en
Publication of WO2000042621A2 publication Critical patent/WO2000042621A2/en
Publication of WO2000042621A3 publication Critical patent/WO2000042621A3/en
Priority to US11/452,591 priority patent/US20070178227A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0576—Processes for depositing or forming superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inert Electrodes (AREA)
  • Fuel Cell (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Ceramic Capacitors (AREA)

Abstract

Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal grain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.
PCT/US2000/000824 1999-01-12 2000-01-12 Epitaxial thin films WO2000042621A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US09/889,237 US7033637B1 (en) 1999-01-12 2000-01-12 Epitaxial thin films
AU41656/00A AU774828B2 (en) 1999-01-12 2000-01-12 Epitaxial thin films
CA002359710A CA2359710C (en) 1999-01-12 2000-01-12 Epitaxial thin films
JP2000594127A JP2002535224A (en) 1999-01-12 2000-01-12 Epitaxial thin film
EP00921311A EP1145252A2 (en) 1999-01-12 2000-01-12 Epitaxial thin films
US11/452,591 US20070178227A1 (en) 1999-01-12 2006-06-15 Epitaxial thin films

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11551999P 1999-01-12 1999-01-12
US60/115,519 1999-01-12

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10/862,605 Division US20050019594A1 (en) 1999-01-12 2004-06-07 Epitaxial thin films
US11/452,591 Division US20070178227A1 (en) 1999-01-12 2006-06-15 Epitaxial thin films

Publications (2)

Publication Number Publication Date
WO2000042621A2 WO2000042621A2 (en) 2000-07-20
WO2000042621A3 true WO2000042621A3 (en) 2001-08-02

Family

ID=22361922

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/000824 WO2000042621A2 (en) 1999-01-12 2000-01-12 Epitaxial thin films

Country Status (6)

Country Link
EP (1) EP1145252A2 (en)
JP (2) JP2002535224A (en)
CN (1) CN100385696C (en)
AU (1) AU774828B2 (en)
CA (1) CA2359710C (en)
WO (1) WO2000042621A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003229677B2 (en) * 2002-04-23 2008-10-09 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. High-temperature solid electrolyte fuel cell comprising a composite of nanoporous thin-film electrodes and a structured electrolyte
CN100365740C (en) * 2006-04-27 2008-01-30 西南交通大学 Buffer layer of high temp superconductive coated conductor
DE102007024166B4 (en) * 2007-05-24 2011-01-05 Zenergy Power Gmbh A method of processing a metal substrate and using it for a high temperature superconductor
JP5376500B2 (en) * 2008-12-04 2013-12-25 株式会社ノリタケカンパニーリミテド Oxygen ion conductive ceramic membrane material and manufacturing method thereof
CN102039264A (en) * 2009-10-21 2011-05-04 正峰新能源股份有限公司 Non-vacuum CIGS (Copper Indium Gallium Selenium) film densification method
WO2011120034A1 (en) * 2010-03-26 2011-09-29 Ohio University Engineering of an ultra-thin molecular superconductor by charge transfer
EP2426684A1 (en) 2010-09-02 2012-03-07 Mitsubishi Materials Corporation Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method
JP5720001B1 (en) 2013-05-07 2015-05-20 パナソニックＩｐマネジメント株式会社 Proton conductor and proton conducting device
CN109234679B (en) * 2018-08-31 2020-06-12 内蒙古科技大学 Double-layer PNZST perovskite antiferroelectric film and preparation method thereof
CN114774844A (en) * 2022-03-31 2022-07-22 清华大学 Method for regulating and controlling flat surface components of thin film at atomic level

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5741377A (en) * 1995-04-10 1998-04-21 Martin Marietta Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3822904A1 (en) * 1988-07-06 1990-01-11 Siemens Ag JOSEPHSON ELEMENT WITH OXIDE-CERAMIC SUPER LADDER MATERIAL AND METHOD FOR PRODUCING THE ELEMENT
US5027253A (en) * 1990-04-09 1991-06-25 Ibm Corporation Printed circuit boards and cards having buried thin film capacitors and processing techniques for fabricating said boards and cards
JPH05299584A (en) * 1992-02-21 1993-11-12 Toshiba Corp Thin film capacitor element and semiconductor memory device
JPH07283069A (en) * 1994-04-07 1995-10-27 Murata Mfg Co Ltd Dielectric thin film and production thereof
JPH0864216A (en) * 1994-08-25 1996-03-08 Tonen Corp Oxygen ion conductor thin film and manufacture thereof
JPH09221393A (en) * 1996-02-13 1997-08-26 Tdk Corp Lead-containing perovskite type ferroelectric single crystal film and its production
JP3724049B2 (en) * 1996-04-17 2005-12-07 株式会社村田製作所 Thin film capacitor manufacturing method
JPH09321361A (en) * 1996-05-27 1997-12-12 Tdk Corp Piezoelectric vibrator component and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5741377A (en) * 1995-04-10 1998-04-21 Martin Marietta Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same

Also Published As

Publication number Publication date
JP2002535224A (en) 2002-10-22
EP1145252A2 (en) 2001-10-17
CA2359710C (en) 2008-09-02
CN1526172A (en) 2004-09-01
AU4165600A (en) 2000-08-01
WO2000042621A2 (en) 2000-07-20
CA2359710A1 (en) 2000-07-20
AU774828B2 (en) 2004-07-08
JP2011044705A (en) 2011-03-03
CN100385696C (en) 2008-04-30

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