CA2359710C - Couches minces epitaxiales - Google Patents
Couches minces epitaxiales Download PDFInfo
- Publication number
- CA2359710C CA2359710C CA002359710A CA2359710A CA2359710C CA 2359710 C CA2359710 C CA 2359710C CA 002359710 A CA002359710 A CA 002359710A CA 2359710 A CA2359710 A CA 2359710A CA 2359710 C CA2359710 C CA 2359710C
- Authority
- CA
- Canada
- Prior art keywords
- epitaxial
- ccvd
- thin films
- films
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 239000003990 capacitor Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 80
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 30
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 46
- 239000012528 membrane Substances 0.000 abstract description 44
- 239000003792 electrolyte Substances 0.000 abstract description 41
- 239000000446 fuel Substances 0.000 abstract description 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 27
- 229910052760 oxygen Inorganic materials 0.000 abstract description 27
- 239000001301 oxygen Substances 0.000 abstract description 27
- 239000001257 hydrogen Substances 0.000 abstract description 24
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 22
- 239000007789 gas Substances 0.000 abstract description 19
- 239000002887 superconductor Substances 0.000 abstract description 16
- 238000000926 separation method Methods 0.000 abstract description 13
- 239000007787 solid Substances 0.000 abstract description 10
- 239000003989 dielectric material Substances 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000000919 ceramic Substances 0.000 abstract description 5
- 238000005137 deposition process Methods 0.000 abstract description 5
- 238000000280 densification Methods 0.000 abstract description 2
- 230000001419 dependent effect Effects 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 67
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 42
- 238000000151 deposition Methods 0.000 description 42
- 230000008569 process Effects 0.000 description 35
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 35
- 230000008021 deposition Effects 0.000 description 32
- 238000000576 coating method Methods 0.000 description 30
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 16
- 239000002243 precursor Substances 0.000 description 16
- 229910002370 SrTiO3 Inorganic materials 0.000 description 14
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 12
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000001294 propane Substances 0.000 description 8
- 229910052712 strontium Inorganic materials 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- -1 yttria-stabiliwd ZY% Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910002119 nickel–yttria stabilized zirconia Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 4
- 238000000889 atomisation Methods 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 4
- 239000002001 electrolyte material Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910002244 LaAlO3 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 239000012707 chemical precursor Substances 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000004320 controlled atmosphere Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- 239000003345 natural gas Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 235000015096 spirit Nutrition 0.000 description 3
- DLWBHRIWCMOQKI-UHFFFAOYSA-L strontium;2-ethylhexanoate Chemical compound [Sr+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O DLWBHRIWCMOQKI-UHFFFAOYSA-L 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- FFQALBCXGPYQGT-UHFFFAOYSA-N 2,4-difluoro-5-(trifluoromethyl)aniline Chemical compound NC1=CC(C(F)(F)F)=C(F)C=C1F FFQALBCXGPYQGT-UHFFFAOYSA-N 0.000 description 2
- 229910002080 8 mol% Y2O3 fully stabilized ZrO2 Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 2
- VJFFDDQGMMQGTQ-UHFFFAOYSA-L barium(2+);2-ethylhexanoate Chemical compound [Ba+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O VJFFDDQGMMQGTQ-UHFFFAOYSA-L 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000011195 cermet Substances 0.000 description 2
- 239000003245 coal Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000007735 ion beam assisted deposition Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000011165 process development Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910014031 strontium zirconium oxide Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229910002761 BaCeO3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910002260 LaCuO3 Inorganic materials 0.000 description 1
- 229910018279 LaSrMnO Inorganic materials 0.000 description 1
- 101100400546 Mus musculus Matn1 gene Proteins 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003408 SrCeO3 Inorganic materials 0.000 description 1
- BQENXCOZCUHKRE-UHFFFAOYSA-N [La+3].[La+3].[O-][Mn]([O-])=O.[O-][Mn]([O-])=O.[O-][Mn]([O-])=O Chemical compound [La+3].[La+3].[O-][Mn]([O-])=O.[O-][Mn]([O-])=O.[O-][Mn]([O-])=O BQENXCOZCUHKRE-UHFFFAOYSA-N 0.000 description 1
- OGMPADNUHIPKDS-UHFFFAOYSA-N [Sr++].[O-][Mn]([O-])=O Chemical compound [Sr++].[O-][Mn]([O-])=O OGMPADNUHIPKDS-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229940075894 denatured ethanol Drugs 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- PAKYGWMMHVXSFM-UHFFFAOYSA-N ethane ethene Chemical compound CC.CC.CC.C=C.C=C.C=C PAKYGWMMHVXSFM-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002078 fully stabilized zirconia Inorganic materials 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000001566 impedance spectroscopy Methods 0.000 description 1
- 238000001453 impedance spectrum Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000002663 nebulization Methods 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000010963 scalable process Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000629 steam reforming Methods 0.000 description 1
- NDTZMEKCGHOCBU-UHFFFAOYSA-N strontium;dioxido(dioxo)manganese Chemical compound [Sr+2].[O-][Mn]([O-])(=O)=O NDTZMEKCGHOCBU-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Fuel Cell (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Ceramic Capacitors (AREA)
- Inert Electrodes (AREA)
Abstract
L'invention concerne des couches minces épitaxiales qui s'utilisent comme couches tampons destinées à des supraconducteurs à haute température, à des électrolytes pour piles à combustible oxyde solide (SOFC), à des membranes de séparation gazeuse ou à des matériels diélectriques équipant des dispositifs électroniques. La mise en oeuvre d'une méthode CCVD, CACVD ou de n'importe quelle autre méthode de dépôt appropriée permet de former des couches épitaxiales sans porosité présentant des joints de grain parfaits et une structure dense. Plusieurs types de matériau différents peuvent être utilisés pour former les couches tampons dans des supraconducteurs à haute température. En outre, l'utilisation de couches minces épitaxiales pour former des électrolytes et des électrodes dans des SOFC produit une microstructure densifiée sans porosité, présentant une interface et un joint de grain parfaits. L'invention concerne également des membranes de séparation gazeuse destinées à produire de l'oxygène et de l'hydrogène. Ces membranes semi perméables sont constituées de couches submicroniques d'oxydes mixtes conducteurs de haute qualité, denses, étanches au gaz et exemptes de trous d'épingle, disposées sur des substrats céramiques. L'invention concerne en outre des couches minces épitaxiales utilisées comme matériel diélectrique dans des condensateurs. Ces condensateurs sont utilisés selon leurs valeurs capacitives, lesquelles dépendent de la structure physique et de la permitivité diélectrique des condensateurs. Les couches minces épitaxiales de l'invention forment des couches diélectriques à faible perte ayant une permitivité extrêmement élevée. Cette permitivité élevée permet de former des condensateurs dont la capacité peut être réglée par application d'une polarisation en continu entre leurs électrodes.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11551999P | 1999-01-12 | 1999-01-12 | |
| US60/115,519 | 1999-01-12 | ||
| PCT/US2000/000824 WO2000042621A2 (fr) | 1999-01-12 | 2000-01-12 | Couches minces epitaxiales |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2359710A1 CA2359710A1 (fr) | 2000-07-20 |
| CA2359710C true CA2359710C (fr) | 2008-09-02 |
Family
ID=22361922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002359710A Expired - Fee Related CA2359710C (fr) | 1999-01-12 | 2000-01-12 | Couches minces epitaxiales |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1145252A2 (fr) |
| JP (2) | JP2002535224A (fr) |
| CN (1) | CN100385696C (fr) |
| AU (1) | AU774828B2 (fr) |
| CA (1) | CA2359710C (fr) |
| WO (1) | WO2000042621A2 (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005531885A (ja) * | 2002-04-23 | 2005-10-20 | フラウンホフェル−ゲゼルシャフト ツ−ル フォルダルング デル アンゲバンドテン フォルシュング エー．ファウ． | ナノ多孔性薄層電極と構造化電解質との複合物を含んでなる高温固体電解質燃料電池 |
| CN100365740C (zh) * | 2006-04-27 | 2008-01-30 | 西南交通大学 | 一种高温超导涂层导体的缓冲层 |
| DE102007024166B4 (de) * | 2007-05-24 | 2011-01-05 | Zenergy Power Gmbh | Verfahren zum Bearbeiten eines Metallsubstrats und Verwendung dessen für einen Hochtemperatur-Supraleiter |
| JP5376500B2 (ja) * | 2008-12-04 | 2013-12-25 | 株式会社ノリタケカンパニーリミテド | 酸素イオン伝導性セラミック膜材およびその製造方法 |
| CN102039264A (zh) * | 2009-10-21 | 2011-05-04 | 正峰新能源股份有限公司 | 非真空铜铟镓硒薄膜密实方法 |
| CN102804434A (zh) * | 2010-03-26 | 2012-11-28 | 俄亥俄大学 | 通过电荷转移设计制造超薄分子超导体 |
| EP2426684A1 (fr) | 2010-09-02 | 2012-03-07 | Mitsubishi Materials Corporation | Composition de formation de film mince diélectrique, procédé de formation de film mince diélectrique et film mince diélectrique ainsi formé |
| WO2014181526A1 (fr) | 2013-05-07 | 2014-11-13 | パナソニックＩｐマネジメント株式会社 | Conducteur de protons et dispositif conducteur de protons |
| CN109234679B (zh) * | 2018-08-31 | 2020-06-12 | 内蒙古科技大学 | 一种双层pnzst钙钛矿反铁电薄膜及其制备方法 |
| CN114774844A (zh) * | 2022-03-31 | 2022-07-22 | 清华大学 | 在原子级别调控薄膜平整表面成分的方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3822904A1 (de) * | 1988-07-06 | 1990-01-11 | Siemens Ag | Josephson-element mit oxidkeramischem supraleitermaterial und verfahren zur herstellung des elements |
| US5027253A (en) * | 1990-04-09 | 1991-06-25 | Ibm Corporation | Printed circuit boards and cards having buried thin film capacitors and processing techniques for fabricating said boards and cards |
| JPH05299584A (ja) * | 1992-02-21 | 1993-11-12 | Toshiba Corp | 薄膜容量素子及び半導体記憶装置 |
| JPH07283069A (ja) * | 1994-04-07 | 1995-10-27 | Murata Mfg Co Ltd | 誘電体薄膜およびその製造方法 |
| JPH0864216A (ja) * | 1994-08-25 | 1996-03-08 | Tonen Corp | 酸素イオン導電体薄膜及びその製造方法 |
| US5741377A (en) * | 1995-04-10 | 1998-04-21 | Martin Marietta Energy Systems, Inc. | Structures having enhanced biaxial texture and method of fabricating same |
| JPH09221393A (ja) * | 1996-02-13 | 1997-08-26 | Tdk Corp | 鉛含有ペロブスカイト型強誘電体単結晶膜及びその製造方法 |
| JP3724049B2 (ja) * | 1996-04-17 | 2005-12-07 | 株式会社村田製作所 | 薄膜コンデンサの製造方法 |
| JPH09321361A (ja) * | 1996-05-27 | 1997-12-12 | Tdk Corp | 圧電振動部品及びその製造方法 |
-
2000
- 2000-01-12 CN CNB008045860A patent/CN100385696C/zh not_active Expired - Fee Related
- 2000-01-12 JP JP2000594127A patent/JP2002535224A/ja active Pending
- 2000-01-12 CA CA002359710A patent/CA2359710C/fr not_active Expired - Fee Related
- 2000-01-12 AU AU41656/00A patent/AU774828B2/en not_active Ceased
- 2000-01-12 WO PCT/US2000/000824 patent/WO2000042621A2/fr not_active Application Discontinuation
- 2000-01-12 EP EP00921311A patent/EP1145252A2/fr not_active Withdrawn
-
2010
- 2010-07-23 JP JP2010166139A patent/JP2011044705A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AU4165600A (en) | 2000-08-01 |
| CA2359710A1 (fr) | 2000-07-20 |
| JP2011044705A (ja) | 2011-03-03 |
| CN100385696C (zh) | 2008-04-30 |
| AU774828B2 (en) | 2004-07-08 |
| JP2002535224A (ja) | 2002-10-22 |
| EP1145252A2 (fr) | 2001-10-17 |
| WO2000042621A2 (fr) | 2000-07-20 |
| CN1526172A (zh) | 2004-09-01 |
| WO2000042621A3 (fr) | 2001-08-02 |
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