CA2284197C - High conductivity buried layer in optical waveguide - Google Patents

High conductivity buried layer in optical waveguide Download PDF

Info

Publication number
CA2284197C
CA2284197C CA002284197A CA2284197A CA2284197C CA 2284197 C CA2284197 C CA 2284197C CA 002284197 A CA002284197 A CA 002284197A CA 2284197 A CA2284197 A CA 2284197A CA 2284197 C CA2284197 C CA 2284197C
Authority
CA
Canada
Prior art keywords
layer
rib
wafer
active region
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002284197A
Other languages
English (en)
French (fr)
Other versions
CA2284197A1 (en
Inventor
Robert John Bozeat
Vishal Nayar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Publication of CA2284197A1 publication Critical patent/CA2284197A1/en
Application granted granted Critical
Publication of CA2284197C publication Critical patent/CA2284197C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
  • Glass Compositions (AREA)
CA002284197A 1997-03-20 1998-02-24 High conductivity buried layer in optical waveguide Expired - Fee Related CA2284197C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9705803.6 1997-03-20
GB9705803A GB2323450A (en) 1997-03-20 1997-03-20 Optical modulator
PCT/GB1998/000585 WO1998043128A1 (en) 1997-03-20 1998-02-24 High conductivity buried layer in optical waveguide

Publications (2)

Publication Number Publication Date
CA2284197A1 CA2284197A1 (en) 1998-10-01
CA2284197C true CA2284197C (en) 2006-06-06

Family

ID=10809585

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002284197A Expired - Fee Related CA2284197C (en) 1997-03-20 1998-02-24 High conductivity buried layer in optical waveguide

Country Status (10)

Country Link
US (1) US6374001B1 (de)
EP (1) EP0968455B1 (de)
JP (2) JP3944246B2 (de)
KR (1) KR20010005523A (de)
CN (1) CN1134692C (de)
AT (1) ATE384974T1 (de)
CA (1) CA2284197C (de)
DE (1) DE69839042T2 (de)
GB (1) GB2323450A (de)
WO (1) WO1998043128A1 (de)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2333851B (en) * 1999-02-16 2000-01-19 Bookham Technology Ltd An optical waveguide
AUPP930799A0 (en) * 1999-03-18 1999-04-15 University Of Sydney, The Optical planar waveguide device and method of its fabrication
JP3384447B2 (ja) * 1999-07-12 2003-03-10 Ｎｅｃ化合物デバイス株式会社 吸収型光変調器およびその製造方法
US6351578B1 (en) * 1999-08-06 2002-02-26 Gemfire Corporation Thermo-optic switch having fast rise-time
CA2365499C (en) 2000-12-26 2011-02-15 National Research Council Of Canada High speed and high efficiency si-based photodetectors using waveguides formed with silicides for near ir applications
US6890450B2 (en) * 2001-02-02 2005-05-10 Intel Corporation Method of providing optical quality silicon surface
KR100397609B1 (ko) * 2001-02-16 2003-09-13 삼성전기주식회사 캐리어 유입 경로의 폭을 임의로 제어할 수 있는 반도체레이저 다이오드
WO2002069004A2 (en) * 2001-02-22 2002-09-06 Bookham Technology Plc Semiconductor optical waveguide device
US6853773B2 (en) 2001-04-30 2005-02-08 Kotusa, Inc. Tunable filter
EP2261953A3 (de) * 2001-05-17 2011-05-25 Optronx, Inc. Lichtwellenleiter mit zusätzlichen Polysiliziumschichten
US7082235B2 (en) * 2001-09-10 2006-07-25 California Institute Of Technology Structure and method for coupling light between dissimilar waveguides
US7120338B2 (en) * 2001-09-10 2006-10-10 California Institute Of Technology Tuning the index of a waveguide structure
US6917727B2 (en) * 2001-09-10 2005-07-12 California Institute Of Technology Strip loaded waveguide integrated with electronics components
GB2383425A (en) * 2001-12-19 2003-06-25 Bookham Technology Plc Integrated optical device
US6999668B2 (en) * 2002-01-09 2006-02-14 Matsushita Electric Industrial Co., Ltd. Method for manufacturing optical waveguide device, optical waveguide device, and coherent light source and optical apparatus using the optical waveguide device
US7010208B1 (en) 2002-06-24 2006-03-07 Luxtera, Inc. CMOS process silicon waveguides
US6882758B2 (en) * 2002-07-09 2005-04-19 Bookham Technology Plc Current tuned Mach-Zehnder optical attenuator
GB0216143D0 (en) * 2002-07-12 2002-08-21 Bookham Technology Plc Semiconductor optical waveguide device
US6901911B2 (en) * 2002-07-31 2005-06-07 Caterpillar Inc Pump and hydraulic system with low pressure priming and over pressurization avoidance features
US20040191564A1 (en) * 2002-12-17 2004-09-30 Samsung Sdi Co., Ltd. Donor film for low molecular weight full color organic electroluminescent device using laser induced thermal imaging method and method for fabricating low molecular weight full color organic electroluminescent device using the film
US6853793B1 (en) 2003-02-21 2005-02-08 Kotura, Inc. Attenuator having reduced optical loss in the pass mode
US6970611B1 (en) 2003-08-27 2005-11-29 Kotura, Inc. Optical component having reduced interference from radiation modes
WO2005082091A2 (en) * 2004-02-26 2005-09-09 Sioptical, Inc. Active manipulation of light in a silicon-on-insulator (soi) structure
US7315679B2 (en) * 2004-06-07 2008-01-01 California Institute Of Technology Segmented waveguide structures
US7035487B2 (en) * 2004-06-21 2006-04-25 Intel Corporation Phase shifting optical device with dopant barrier
DK4008949T3 (da) * 2004-09-29 2024-03-04 Signify Holding Bv Belysningsindretning
FR2879820B1 (fr) * 2004-12-16 2009-01-16 Commissariat Energie Atomique Modulateur a jonction capacitive, jonction capacitive et son procede de realisation
US7826688B1 (en) 2005-10-21 2010-11-02 Luxtera, Inc. Enhancing the sensitivity of resonant optical modulating and switching devices
US7865053B2 (en) * 2006-12-29 2011-01-04 Alcatel-Lucent Usa Inc. Multi-semiconductor slab electro-optic modulator and process for using the same
JP4495178B2 (ja) * 2007-02-23 2010-06-30 日本電信電話株式会社 シリコン光導波路及びその製造方法
US7672553B2 (en) * 2007-03-01 2010-03-02 Alcatel-Lucent Usa Inc. High speed semiconductor optical modulator
KR100958718B1 (ko) * 2007-12-07 2010-05-18 한국전자통신연구원 광신호의 위상을 변환시키는 광전 소자를 포함하는 반도체집적회로
US8213751B1 (en) * 2008-11-26 2012-07-03 Optonet Inc. Electronic-integration compatible photonic integrated circuit and method for fabricating electronic-integration compatible photonic integrated circuit
CN101813834B (zh) * 2009-02-19 2011-08-24 北京大学 一种双mos结构硅基电光调制器
WO2010103891A1 (ja) * 2009-03-13 2010-09-16 日本電気株式会社 光変調器とその製造方法
FR2943802B1 (fr) * 2009-03-24 2011-09-30 Univ Paris Sud Modulateur optique a haut debit en semi-conducteur sur isolant
US8842942B2 (en) * 2010-02-08 2014-09-23 Samsung Electronics Co., Ltd. Optical modulator formed on bulk-silicon substrate
GB2477935A (en) * 2010-02-17 2011-08-24 Univ Surrey Electro-optic device with a waveguide rib
JP5633224B2 (ja) * 2010-07-22 2014-12-03 富士通株式会社 光半導体装置及びその駆動方法
JP5577909B2 (ja) * 2010-07-22 2014-08-27 富士通株式会社 光半導体装置及びその製造方法
US20120114001A1 (en) 2010-11-10 2012-05-10 Fang Alexander W Hybrid ridge waveguide
JP5673060B2 (ja) * 2010-12-14 2015-02-18 富士通株式会社 光半導体装置及びその製造方法
WO2012124830A1 (ja) * 2011-03-17 2012-09-20 日本碍子株式会社 光変調素子
US20120280345A1 (en) * 2011-05-05 2012-11-08 Agency For Science, Technology And Research Photodetector and a method of forming the same
WO2013003830A2 (en) 2011-06-30 2013-01-03 Saint-Gobain Ceramics & Plastics, Inc. Abrasive articles including abrasive particles of silicon nitride
CN102390803B (zh) * 2011-08-29 2015-02-04 常州大学 一种高过载、可恢复压力传感器及制造方法
US8989522B2 (en) * 2012-05-09 2015-03-24 Kotura, Inc. Isolation of components on optical device
US10025120B2 (en) 2012-12-13 2018-07-17 Luxtera, Inc. Method and system for a low parasitic silicon high-speed phase modulator having raised fingers perpendicular to the PN junction
JP6409299B2 (ja) * 2014-03-27 2018-10-24 日本電気株式会社 光変調用素子および光変調器
CN105487263B (zh) * 2014-06-30 2018-04-13 硅光电科技股份有限公司 硅基脊型波导调制器及其制造方法
FR3040499B1 (fr) * 2015-08-24 2017-10-13 St Microelectronics Crolles 2 Sas Circuit integre comprenant un dispositif actif de confinement d'un flux lumineux
CN111142270B (zh) * 2018-11-05 2022-10-11 青岛海信激光显示股份有限公司 一种激光散斑消除装置及其激光显示设备
CN111679529B (zh) * 2020-07-28 2024-02-13 哈尔滨工业大学（深圳） 可用于光学相控阵发射单元的长距离亚波长光栅结构
CN114911081B (zh) * 2022-06-27 2025-05-06 西安工程大学 顶注入电光调制结构
US20240280842A1 (en) * 2023-02-21 2024-08-22 Apple Inc. Efficient Pin Phase Shifters
EP4446799A1 (de) * 2023-02-21 2024-10-16 Apple Inc. Effiziente pin-phasenschieber

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4093345A (en) * 1976-05-27 1978-06-06 Bell Telephone Laboratories, Incorporated Semiconductor rib waveguide optical modulator with heterojunction control electrode cladding
JPS59181317A (ja) * 1983-03-31 1984-10-15 Sumitomo Electric Ind Ltd 光変調素子
US4868633A (en) * 1986-10-22 1989-09-19 Texas Instruments Incorporated Selective epitaxy devices and method
US4787691A (en) * 1987-03-26 1988-11-29 The United States Of America As Represented By The Secretary Of The Air Force Electro-optical silicon devices
JPH02228634A (ja) * 1989-03-01 1990-09-11 Sumitomo Electric Ind Ltd 半導体光スイッチ及びその製造方法
JPH04107428A (ja) * 1990-08-28 1992-04-08 Fujikura Ltd 基板型光スイッチ
JPH04179931A (ja) * 1990-11-14 1992-06-26 Oki Electric Ind Co Ltd 導波型光デバイス
JPH05173199A (ja) * 1990-12-20 1993-07-13 Fujitsu Ltd 非線形光学装置
DE4120198A1 (de) * 1991-06-19 1992-12-24 Bosch Gmbh Robert Integriert optische schaltung
JP2754957B2 (ja) * 1991-07-10 1998-05-20 日本電気株式会社 半導体光制御素子およびその製造方法
GB2300299B (en) * 1995-04-26 1999-07-07 Toshiba Cambridge Res Center Operation of a semiconductor device
US5963358A (en) * 1995-04-26 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor device and method for its operation
JPH08313853A (ja) * 1995-05-15 1996-11-29 Fujitsu Ltd 半導体光変調装置、光変調方法及び光半導体装置

Also Published As

Publication number Publication date
EP0968455A1 (de) 2000-01-05
KR20010005523A (ko) 2001-01-15
ATE384974T1 (de) 2008-02-15
DE69839042D1 (de) 2008-03-13
EP0968455B1 (de) 2008-01-23
DE69839042T2 (de) 2009-02-12
US6374001B1 (en) 2002-04-16
CN1134692C (zh) 2004-01-14
GB9705803D0 (en) 1997-05-07
CN1257586A (zh) 2000-06-21
CA2284197A1 (en) 1998-10-01
JP2007079604A (ja) 2007-03-29
WO1998043128A1 (en) 1998-10-01
JP3944246B2 (ja) 2007-07-11
GB2323450A (en) 1998-09-23
JP2001526797A (ja) 2001-12-18

Similar Documents

Publication Publication Date Title
CA2284197C (en) High conductivity buried layer in optical waveguide
US8362494B2 (en) Electro-optic device with novel insulating structure and a method for manufacturing the same
US7751654B2 (en) Electro-optic modulation
JP5321598B2 (ja) 光変調器とその製造方法
US8873895B2 (en) Optical modulator
US6987910B2 (en) Silicon light waveguide with MOS capacitors positioned on the waveguide
JP2019215488A (ja) 電気光学変調器
US8483520B2 (en) Optical modulation structure and optical modulator
JP5154921B2 (ja) シリコン上に集積された高周波オプトエレクトロニク変調器
EP3097450A1 (de) Elektrooptischer modulator mit vertikaler kondensatorstruktur
JPWO2016157687A1 (ja) 電気光学装置
EP1782123B1 (de) Mit einem halbleiterwellenleiter vorgesehener optischer hochgeschwindigkeitsphasenschieber
WO1986003016A1 (en) Optical waveguiding technique in bulk materials
Breglio et al. Two silicon optical modulators realizable with a fully compatible bipolar process
TW445656B (en) Optical device
EP0447815B1 (de) Magnetooptisches Gerät
Thomson et al. Total internal reflection optical switch in SOI with defect engineered barrier region
Atta et al. Fabrication of a highly efficient optical modulator based on silicon-on-insulator
Tu et al. A high-performance Si-based MOS electrooptic phase Modulator with a shunt-capacitor configuration
Dumas Germanium on silicon photonics
Aronson et al. Integrated‐optical switch arrays in GaAs based on electrically controlled dynamic free carrier gratings
Hsu et al. Silicon pin optical waveguide modulators fabricated on the silicon and silicon-on-insulator substrates
HOSOMI et al. Light modulation by polariton directional-coupler-type devices

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed