CA2085337A1 - Laser a semiconducteur enfoui - Google Patents

Laser a semiconducteur enfoui

Info

Publication number
CA2085337A1
CA2085337A1 CA2085337A CA2085337A CA2085337A1 CA 2085337 A1 CA2085337 A1 CA 2085337A1 CA 2085337 A CA2085337 A CA 2085337A CA 2085337 A CA2085337 A CA 2085337A CA 2085337 A1 CA2085337 A1 CA 2085337A1
Authority
CA
Canada
Prior art keywords
buried
laser device
type semiconductor
semiconductor laser
ridge mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2085337A
Other languages
English (en)
Other versions
CA2085337C (fr
Inventor
Akihiko Kasukawa
Toshio Kikuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of CA2085337A1 publication Critical patent/CA2085337A1/fr
Application granted granted Critical
Publication of CA2085337C publication Critical patent/CA2085337C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CA002085337A 1991-12-18 1992-12-14 Laser a semiconducteur enfoui Expired - Fee Related CA2085337C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3353614A JPH05167191A (ja) 1991-12-18 1991-12-18 埋め込み型半導体レーザ素子
JP3-353614 1991-12-18

Publications (2)

Publication Number Publication Date
CA2085337A1 true CA2085337A1 (fr) 1993-06-19
CA2085337C CA2085337C (fr) 1998-10-20

Family

ID=18432039

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002085337A Expired - Fee Related CA2085337C (fr) 1991-12-18 1992-12-14 Laser a semiconducteur enfoui

Country Status (5)

Country Link
US (1) US5325385A (fr)
EP (1) EP0547850B1 (fr)
JP (1) JPH05167191A (fr)
CA (1) CA2085337C (fr)
DE (1) DE69209023D1 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2718342B2 (ja) * 1993-05-28 1998-02-25 日本電気株式会社 半導体レーザ及びその製造方法
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
US5789772A (en) * 1994-07-15 1998-08-04 The Whitaker Corporation Semi-insulating surface light emitting devices
US5608234A (en) * 1994-11-14 1997-03-04 The Whitaker Corporation Semi-insulating edge emitting light emitting diode
US5629232A (en) * 1994-11-14 1997-05-13 The Whitaker Corporation Method of fabricating semiconductor light emitting devices
JPH09199803A (ja) * 1996-01-23 1997-07-31 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
US20060189571A1 (en) * 2000-01-10 2006-08-24 Saul Yedgar Use of lipid conjugates in the treatment of infection
DE60136261D1 (de) 2001-01-18 2008-12-04 Avago Tech Fiber Ip Sg Pte Ltd Halbleiterbauelement mit Strombegrenzungstruktur
KR20020078189A (ko) * 2001-04-06 2002-10-18 한국전자통신연구원 매립형 리지 구조의 전류 차단층을 갖는 광소자 및 그제조 방법
EP1271722A1 (fr) * 2001-06-25 2003-01-02 Agilent Technologies, Inc. (a Delaware corporation) Structure laser à semiconducteur et méthode de fabrication
US6829275B2 (en) 2001-12-20 2004-12-07 Bookham Technology, Plc Hybrid confinement layers of buried heterostructure semiconductor laser
KR100620912B1 (ko) 2003-12-05 2006-09-13 한국전자통신연구원 반도체 레이저 및 그 제작 방법
JP2010010622A (ja) * 2008-06-30 2010-01-14 Sumitomo Electric Ind Ltd 半導体光素子
JP5195186B2 (ja) * 2008-09-05 2013-05-08 三菱電機株式会社 半導体装置の製造方法
US10244181B2 (en) * 2009-02-17 2019-03-26 Trilumina Corp. Compact multi-zone infrared laser illuminator
US20130223846A1 (en) 2009-02-17 2013-08-29 Trilumina Corporation High speed free-space optical communications
US10038304B2 (en) 2009-02-17 2018-07-31 Trilumina Corp. Laser arrays for variable optical properties
US11095365B2 (en) 2011-08-26 2021-08-17 Lumentum Operations Llc Wide-angle illuminator module
JP2013149665A (ja) * 2012-01-17 2013-08-01 Sumitomo Electric Ind Ltd 量子カスケード半導体レーザ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111388A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 埋込ヘテロ形半導体レ−ザ
JPS6092684A (ja) * 1983-10-26 1985-05-24 Nec Corp 埋め込み型半導体レ−ザ
EP0314372A3 (fr) * 1987-10-29 1989-10-25 AT&T Corp. Région de confinement de courant et de blocage pour dispositifs à semi-conducteurs
JPH0279486A (ja) * 1988-09-14 1990-03-20 Sharp Corp 半導体レーザ素子
DE3929312A1 (de) * 1989-09-04 1991-03-07 Standard Elektrik Lorenz Ag Halbleiterlaser

Also Published As

Publication number Publication date
US5325385A (en) 1994-06-28
DE69209023D1 (de) 1996-04-18
JPH05167191A (ja) 1993-07-02
EP0547850A1 (fr) 1993-06-23
CA2085337C (fr) 1998-10-20
EP0547850B1 (fr) 1996-03-13

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed