JPS55110090A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS55110090A
JPS55110090A JP1815279A JP1815279A JPS55110090A JP S55110090 A JPS55110090 A JP S55110090A JP 1815279 A JP1815279 A JP 1815279A JP 1815279 A JP1815279 A JP 1815279A JP S55110090 A JPS55110090 A JP S55110090A
Authority
JP
Japan
Prior art keywords
layers
laser element
type
laser
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1815279A
Other languages
Japanese (ja)
Other versions
JPS6015158B2 (en
Inventor
Kunio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1815279A priority Critical patent/JPS6015158B2/en
Publication of JPS55110090A publication Critical patent/JPS55110090A/en
Publication of JPS6015158B2 publication Critical patent/JPS6015158B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To simplify the use of laser by forming an element to absorb surge current in a semiconductor laser device itself and thereby make a constant current circuit or a surge absorbing circuit unnecessary.
CONSTITUTION: Ga1-yAlyAs active layer 3, sandwiched by p- and n-type Ga1-x AlxAs-layers 2, 4, is formed on n-type GaAs substrate 1. On top of this is placed p-type GaAs 5, and a laser element is left in the form of a stripe. A p-type and n- type GaAs-layers 7, 8 are grown on layer 2 via high-resistance GaAs-layer 6 on the side surface of the stripe. Their heights are made the same. Electrodes 9, 10 are attached to layers 5, 8 and substrate 1. The concentration is adjusted so that the breakdown voltage becomes equal to the forward voltage at the time when a specified current flows to the laser element. By this structure, only when a current exceeding a specified value flows to the laser element, reverse-biased layers 7, 8 breakdown and thereby the laser element is protected from destruction.
COPYRIGHT: (C)1980,JPO&Japio
JP1815279A 1979-02-19 1979-02-19 semiconductor laser equipment Expired JPS6015158B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1815279A JPS6015158B2 (en) 1979-02-19 1979-02-19 semiconductor laser equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1815279A JPS6015158B2 (en) 1979-02-19 1979-02-19 semiconductor laser equipment

Publications (2)

Publication Number Publication Date
JPS55110090A true JPS55110090A (en) 1980-08-25
JPS6015158B2 JPS6015158B2 (en) 1985-04-17

Family

ID=11963635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1815279A Expired JPS6015158B2 (en) 1979-02-19 1979-02-19 semiconductor laser equipment

Country Status (1)

Country Link
JP (1) JPS6015158B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61230388A (en) * 1985-04-05 1986-10-14 Fujitsu Ltd Buried type semiconductor laser
EP0650235A2 (en) * 1993-10-20 1995-04-26 Kabushiki Kaisha Toshiba Semiconductor laser device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057971U (en) * 1983-09-29 1985-04-23 横浜　勝則 Trawl net protective cover

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61230388A (en) * 1985-04-05 1986-10-14 Fujitsu Ltd Buried type semiconductor laser
US5495493A (en) * 1993-01-20 1996-02-27 Kabushiki Kaisha Toshiba Semiconductor laser device
EP0650235A2 (en) * 1993-10-20 1995-04-26 Kabushiki Kaisha Toshiba Semiconductor laser device
EP0650235A3 (en) * 1993-10-20 1995-05-03 Toshiba Kk Semiconductor laser device.

Also Published As

Publication number Publication date
JPS6015158B2 (en) 1985-04-17

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