CA2030008A1 - Dispositif recepteur de lumiere - Google Patents

Dispositif recepteur de lumiere

Info

Publication number
CA2030008A1
CA2030008A1 CA2030008A CA2030008A CA2030008A1 CA 2030008 A1 CA2030008 A1 CA 2030008A1 CA 2030008 A CA2030008 A CA 2030008A CA 2030008 A CA2030008 A CA 2030008A CA 2030008 A1 CA2030008 A1 CA 2030008A1
Authority
CA
Canada
Prior art keywords
light
absorption layer
receiving device
detecting regions
response
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2030008A
Other languages
English (en)
Other versions
CA2030008C (fr
Inventor
Ichiro Tonai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Ichiro Tonai
Sumitomo Electric Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ichiro Tonai, Sumitomo Electric Industries, Ltd. filed Critical Ichiro Tonai
Publication of CA2030008A1 publication Critical patent/CA2030008A1/fr
Application granted granted Critical
Publication of CA2030008C publication Critical patent/CA2030008C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4292—Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
CA002030008A 1989-11-14 1990-11-14 Dispositif recepteur de lumiere Expired - Fee Related CA2030008C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1296865A JPH03156980A (ja) 1989-11-14 1989-11-14 受光素子
JP296865/1989 1989-11-14

Publications (2)

Publication Number Publication Date
CA2030008A1 true CA2030008A1 (fr) 1991-05-15
CA2030008C CA2030008C (fr) 1997-03-04

Family

ID=17839164

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002030008A Expired - Fee Related CA2030008C (fr) 1989-11-14 1990-11-14 Dispositif recepteur de lumiere

Country Status (6)

Country Link
US (1) US6114737A (fr)
EP (1) EP0428159B1 (fr)
JP (1) JPH03156980A (fr)
KR (1) KR910010756A (fr)
CA (1) CA2030008C (fr)
DE (1) DE69033259T2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2088612C (fr) * 1992-02-03 2003-04-15 Yoshiki Kuhara Detecteur de lumiere a semiconducteur
WO1994010594A1 (fr) * 1992-10-30 1994-05-11 Klaus Wolter Dispositif de transmission de donnees
WO2000046624A1 (fr) * 1997-08-07 2000-08-10 The Furukawa Electric Co. Ltd. Structure de raccordement collectif d'une pluralite de connecteurs optiques, dispositif d'agencement de connecteurs optiques et adaptateur pour connecteurs optiques
KR100322579B1 (ko) * 1998-10-08 2002-03-08 윤종용 광 커넥터 모듈
JP3959662B2 (ja) * 1999-03-23 2007-08-15 セイコーエプソン株式会社 光信号伝送装置およびその製造方法
US6774578B2 (en) * 2000-09-19 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Self light emitting device and method of driving thereof
US6844607B2 (en) 2000-10-06 2005-01-18 The Furukawa Electric Co., Ltd. Photodiode array device, a photodiode module, and a structure for connecting the photodiode module and an optical connector
JP2002185032A (ja) * 2000-10-06 2002-06-28 Furukawa Electric Co Ltd:The 受光アレイ素子、受光モジュール及び受光モジュールと光コネクタとの接続構造
JP2003282939A (ja) * 2002-03-26 2003-10-03 Oki Degital Imaging:Kk 半導体発光装置及びその製造方法
FR2855655B1 (fr) 2003-05-26 2005-08-19 Commissariat Energie Atomique Detecteur de rayonnement infrarouge photovoltaique a grille conductrice independante et tridimensionnelle
DE102007037020B3 (de) * 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodiode
US8039780B2 (en) * 2009-04-08 2011-10-18 Sumitomo Electric Industries, Ltd. Photodiode array and image pickup device using the same
US8247881B2 (en) * 2009-04-27 2012-08-21 University Of Seoul Industry Cooperation Foundation Photodiodes with surface plasmon couplers
DE102013018789A1 (de) 2012-11-29 2014-06-05 Infineon Technologies Ag Steuern lichterzeugter Ladungsträger
FR3006105B1 (fr) * 2013-05-22 2016-09-09 New Imaging Tech Matrice de photodiode a absorption reglable de charge
US10854646B2 (en) 2018-10-19 2020-12-01 Attollo Engineering, LLC PIN photodetector

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
US3703669A (en) * 1971-08-12 1972-11-21 Motorola Inc Photocurrent cross talk isolation
JPS5213918B2 (fr) * 1972-02-02 1977-04-18
US3845296A (en) * 1973-10-10 1974-10-29 Us Army Photosensitive junction controlled electron emitter
EP0228712B1 (fr) * 1986-01-06 1995-08-09 Sel Semiconductor Energy Laboratory Co., Ltd. Dispositif de conversion photo-électrique à haute vitesse de réponse et méthode pour sa fabrication

Also Published As

Publication number Publication date
DE69033259D1 (de) 1999-09-30
JPH03156980A (ja) 1991-07-04
DE69033259T2 (de) 2000-01-05
CA2030008C (fr) 1997-03-04
US6114737A (en) 2000-09-05
EP0428159B1 (fr) 1999-08-25
EP0428159A1 (fr) 1991-05-22
KR910010756A (ko) 1991-06-29

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Legal Events

Date Code Title Description
EEER Examination request
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