CA2003684A1 - Image sensor - Google Patents

Image sensor

Info

Publication number
CA2003684A1
CA2003684A1 CA002003684A CA2003684A CA2003684A1 CA 2003684 A1 CA2003684 A1 CA 2003684A1 CA 002003684 A CA002003684 A CA 002003684A CA 2003684 A CA2003684 A CA 2003684A CA 2003684 A1 CA2003684 A1 CA 2003684A1
Authority
CA
Canada
Prior art keywords
image sensor
sensor
ccd
semiconductor
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002003684A
Other languages
English (en)
French (fr)
Inventor
Hans Spies
Alfons Woehrl
Martin Spies
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANS SPIES MARTIN SPIES
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2003684A1 publication Critical patent/CA2003684A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/93—Lidar systems specially adapted for specific applications for anti-collision purposes
    • G01S17/931—Lidar systems specially adapted for specific applications for anti-collision purposes of land vehicles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G01S7/4863—Detector arrays, e.g. charge-transfer gates
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Control Of Position, Course, Altitude, Or Attitude Of Moving Bodies (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
CA002003684A 1988-11-23 1989-11-23 Image sensor Abandoned CA2003684A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3839513.4-31 1988-11-23
DE3839513A DE3839513A1 (de) 1988-11-23 1988-11-23 Bildsensor

Publications (1)

Publication Number Publication Date
CA2003684A1 true CA2003684A1 (en) 1990-05-23

Family

ID=6367706

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002003684A Abandoned CA2003684A1 (en) 1988-11-23 1989-11-23 Image sensor

Country Status (5)

Country Link
US (1) US5086342A (OSRAM)
EP (1) EP0377078B1 (OSRAM)
JP (1) JPH0687583B2 (OSRAM)
CA (1) CA2003684A1 (OSRAM)
DE (2) DE3839513A1 (OSRAM)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4107850B4 (de) * 1990-03-10 2006-06-29 Daimlerchrysler Ag Anordnung zur Verbesserung der Sicht, insbesondere in Fahrzeugen
JP2646146B2 (ja) * 1990-03-28 1997-08-25 三菱電機株式会社 車間距離制御装置
DE4222642A1 (de) * 1992-07-10 1994-01-13 Bodenseewerk Geraetetech Bilderfassende Sensoreinheit
EP0583844B1 (en) * 1992-08-18 1999-07-28 Koninklijke Philips Electronics N.V. X-ray examination apparatus with light concentration means and plural image sensors
US6822563B2 (en) 1997-09-22 2004-11-23 Donnelly Corporation Vehicle imaging system with accessory control
US5877897A (en) 1993-02-26 1999-03-02 Donnelly Corporation Automatic rearview mirror, vehicle lighting control and vehicle interior monitoring system using a photosensor array
DE4422886C2 (de) * 1994-06-30 1997-02-20 Daimler Benz Aerospace Ag Verfahren und Einrichtung zur optischen Bestimmung räumlicher Positionen einzelner reflektierender Objekte
US5563404A (en) * 1995-03-22 1996-10-08 Eastman Kodak Company Full frame CCD image sensor with altered accumulation potential
US5612555A (en) * 1995-03-22 1997-03-18 Eastman Kodak Company Full frame solid-state image sensor with altered accumulation potential and method for forming same
US6891563B2 (en) 1996-05-22 2005-05-10 Donnelly Corporation Vehicular vision system
US7655894B2 (en) 1996-03-25 2010-02-02 Donnelly Corporation Vehicular image sensing system
JP2001523006A (ja) * 1997-11-11 2001-11-20 ローマル，フランツ，ヨゼフ 可視障害物によって少なくとも部分的に包囲された地点の衛星測定のための測定期間を決定するための方法及び装置
EP1040366B1 (de) 1997-12-23 2003-10-08 Siemens Aktiengesellschaft Verfahren und vorrichtung zur aufnahme eines dreidimensionalen abstandsbildes
DE19833207A1 (de) * 1998-07-23 2000-02-17 Siemens Ag Verfahren und Vorrichtung zur Aufnahme eines dreidimensionalen Abstandsbildes
DE19757595C2 (de) * 1997-12-23 2000-05-11 Siemens Ag Verfahren und Vorrichtung zur Aufnahme eines dreidimensionalen Abstandsbildes
AU2003225228A1 (en) 2002-05-03 2003-11-17 Donnelly Corporation Object detection system for vehicle
DE10247925A1 (de) * 2002-10-15 2004-04-29 Robert Bosch Gmbh Optischer Sensor
US7526103B2 (en) 2004-04-15 2009-04-28 Donnelly Corporation Imaging system for vehicle
US7972045B2 (en) 2006-08-11 2011-07-05 Donnelly Corporation Automatic headlamp control system
US8717469B2 (en) * 2010-02-03 2014-05-06 Microsoft Corporation Fast gating photosurface
CN113851500A (zh) * 2021-09-24 2021-12-28 中国科学院半导体研究所 一种单光子雪崩二极管图像传感器像素器件、制备方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533061A (en) * 1968-02-12 1970-10-06 Univ Ohio Source-sensor longitudinal control system
JPS5035793B1 (OSRAM) * 1970-09-11 1975-11-19
US3737851A (en) * 1971-04-01 1973-06-05 Traffic Safety Systems Inc Precision vehicle interval detection and signaling system
US3889284A (en) * 1974-01-15 1975-06-10 Us Army Avalanche photodiode with varying bandgap
JPS52101990A (en) * 1976-02-21 1977-08-26 Hitachi Ltd Semiconductor device for photoelectric transducer and its manufacture
JPS5421294A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Avalanche photo diode
FR2469805A1 (fr) * 1979-11-09 1981-05-22 Thomson Csf Matrice de detection d'un rayonnement electromagnetique et intensificateur d'images radiologiques comportant une telle matrice
JPS604135Y2 (ja) * 1980-07-25 1985-02-05 日産自動車株式会社 障害物検知装置
JPS5815375A (ja) * 1981-07-22 1983-01-28 Olympus Optical Co Ltd 固体撮像装置
JPS5861679A (ja) * 1981-10-07 1983-04-12 Kokusai Denshin Denwa Co Ltd <Kdd> 量子井戸層付アバランシ・ホトダイオ−ド
JPS5919480A (ja) * 1982-07-26 1984-01-31 Olympus Optical Co Ltd 固体撮像装置
JPS5928769A (ja) * 1982-08-10 1984-02-15 Sony Corp スチルビデオカメラ
US4622596A (en) * 1983-02-21 1986-11-11 Canon Kabushiki Kaisha Image pickup apparatus
US4665325A (en) * 1984-01-30 1987-05-12 Matsushita Electric Industrial Co., Ltd. Solid state image sensor with signal amplification
US4875100A (en) * 1986-10-23 1989-10-17 Sony Corporation Electronic shutter for a CCD image sensor
AU597134B2 (en) * 1986-11-25 1990-05-24 Pedna Pty. Limited Digital image acquisition system
DE3640449C1 (de) * 1986-11-27 1988-06-30 Messerschmitt Boelkow Blohm Einrichtung zum Bestimmen der Entfernung zwischen zwei Objekten,insbesondere zwei Kraftfahrzeugen
JPS6442992A (en) * 1987-08-08 1989-02-15 Olympus Optical Co Solid-state image pickup device
JPH0715979B2 (ja) * 1987-08-27 1995-02-22 三菱電機株式会社 超格子撮像素子
DE3817153A1 (de) * 1988-05-19 1989-11-30 Messerschmitt Boelkow Blohm Halbleiter-bauelement
JPH0821727B2 (ja) * 1988-11-18 1996-03-04 日本電気株式会社 アバランシェフォトダイオード
US4902886A (en) * 1989-01-23 1990-02-20 Hewlett-Packard Company Noise reduction for photodiode arrays

Also Published As

Publication number Publication date
JPH0687583B2 (ja) 1994-11-02
JPH02151544A (ja) 1990-06-11
US5086342A (en) 1992-02-04
EP0377078B1 (de) 1994-04-06
EP0377078A2 (de) 1990-07-11
EP0377078A3 (en) 1990-11-28
DE3839513C2 (OSRAM) 1992-05-07
DE58907410D1 (de) 1994-05-11
DE3839513A1 (de) 1990-05-31

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Legal Events

Date Code Title Description
FZDE Discontinued
FZDE Discontinued

Effective date: 19940523