CA1237170A - A.c. solid state relay circuit and thyristor structure - Google Patents
A.c. solid state relay circuit and thyristor structureInfo
- Publication number
- CA1237170A CA1237170A CA000443824A CA443824A CA1237170A CA 1237170 A CA1237170 A CA 1237170A CA 000443824 A CA000443824 A CA 000443824A CA 443824 A CA443824 A CA 443824A CA 1237170 A CA1237170 A CA 1237170A
- Authority
- CA
- Canada
- Prior art keywords
- anode
- region
- solid state
- thyristor
- thyristors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000001052 transient effect Effects 0.000 claims abstract description 10
- 238000005286 illumination Methods 0.000 claims abstract description 5
- 239000003990 capacitor Substances 0.000 claims description 23
- 230000005855 radiation Effects 0.000 claims description 9
- 230000035945 sensitivity Effects 0.000 claims description 8
- 238000007667 floating Methods 0.000 claims description 4
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 3
- 206010034960 Photophobia Diseases 0.000 claims description 2
- 208000013469 light sensitivity Diseases 0.000 claims description 2
- 229940035564 duration Drugs 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000000306 component Substances 0.000 abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 6
- 238000004353 relayed correlation spectroscopy Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000001939 inductive effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229960005196 titanium dioxide Drugs 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 241000234282 Allium Species 0.000 description 1
- 241000003910 Baronia <angiosperm> Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 235000019227 E-number Nutrition 0.000 description 1
- 239000004243 E-number Substances 0.000 description 1
- 241000252067 Megalops atlanticus Species 0.000 description 1
- 241000353097 Molva molva Species 0.000 description 1
- 241000863814 Thyris Species 0.000 description 1
- 241000625014 Vir Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 244000145845 chattering Species 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002844 continuous effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/28—Modifications for introducing a time delay before switching
- H03K17/292—Modifications for introducing a time delay before switching in thyristor, unijunction transistor or programmable unijunction transistor switches
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/136—Modifications for switching at zero crossing in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Electronic Switches (AREA)
- Facsimile Heads (AREA)
- Thyristors (AREA)
- Facsimile Scanning Arrangements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000514913A CA1234420A (en) | 1982-12-21 | 1986-07-29 | A.c. solid state relay circuit and thyristor structure |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/451,792 US4535251A (en) | 1982-12-21 | 1982-12-21 | A.C. Solid state relay circuit and structure |
| US451,792 | 1982-12-21 | ||
| US55502583A | 1983-11-25 | 1983-11-25 | |
| US555,025 | 1983-11-25 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000514913A Division CA1234420A (en) | 1982-12-21 | 1986-07-29 | A.c. solid state relay circuit and thyristor structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1237170A true CA1237170A (en) | 1988-05-24 |
Family
ID=27036523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000443824A Expired CA1237170A (en) | 1982-12-21 | 1983-12-20 | A.c. solid state relay circuit and thyristor structure |
Country Status (12)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2590750B1 (fr) * | 1985-11-22 | 1991-05-10 | Telemecanique Electrique | Dispositif de commutation de puissance a semi-conducteurs et son utilisation a la realisation d'un relais statique en courant alternatif |
| GB2234642A (en) * | 1989-07-19 | 1991-02-06 | Philips Nv | Protection for a switched bridge circuit |
| GB2241827B (en) * | 1990-02-23 | 1994-01-26 | Matsushita Electric Works Ltd | Method for manufacturing optically triggered lateral thyristor |
| GB2254730B (en) * | 1991-04-08 | 1994-09-21 | Champion Spark Plug Europ | High current photosensitive electronic switch |
| JP3495847B2 (ja) * | 1995-09-11 | 2004-02-09 | シャープ株式会社 | サイリスタを備える半導体集積回路 |
| US6518604B1 (en) | 2000-09-21 | 2003-02-11 | Conexant Systems, Inc. | Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure |
| EP3249815B1 (en) * | 2016-05-23 | 2019-08-28 | NXP USA, Inc. | Circuit arrangement for fast turn-off of bi-directional switching device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5416839B2 (enrdf_load_stackoverflow) * | 1973-03-06 | 1979-06-25 | ||
| US4001867A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Semiconductive devices with integrated circuit switches |
| JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
| DE2932969A1 (de) * | 1979-04-20 | 1980-10-30 | Ske | Halbleiter-relaiskreis und verfahren zu seiner herstellung |
| DE2922250A1 (de) * | 1979-05-31 | 1980-12-11 | Siemens Ag | Lichtsteuerbarer transistor |
| US4295058A (en) * | 1979-06-07 | 1981-10-13 | Eaton Corporation | Radiant energy activated semiconductor switch |
| DE3019907A1 (de) * | 1980-05-23 | 1981-12-03 | Siemens AG, 1000 Berlin und 8000 München | Lichtsteuerbarer zweirichtungsthyristor |
| FR2488046A1 (fr) * | 1980-07-31 | 1982-02-05 | Silicium Semiconducteur Ssc | Dispositif de puissance a commande par transistor dmos |
| US4361798A (en) * | 1980-10-27 | 1982-11-30 | Pitney Bowes Inc. | System for extending the voltage range of a phase-fired triac controller |
-
1983
- 1983-12-15 SE SE8306952A patent/SE8306952L/xx not_active Application Discontinuation
- 1983-12-15 IL IL70462A patent/IL70462A/xx unknown
- 1983-12-15 DE DE19833345449 patent/DE3345449A1/de active Granted
- 1983-12-20 NL NL8304376A patent/NL8304376A/xx not_active Application Discontinuation
- 1983-12-20 IT IT24285/83A patent/IT1194526B/it active
- 1983-12-20 CA CA000443824A patent/CA1237170A/en not_active Expired
- 1983-12-20 KR KR1019830006040A patent/KR900004197B1/ko not_active Expired
- 1983-12-20 CH CH6781/83A patent/CH664861A5/de not_active IP Right Cessation
- 1983-12-21 FR FR8320500A patent/FR2538170B1/fr not_active Expired
- 1983-12-21 GB GB08333998A patent/GB2133641B/en not_active Expired
- 1983-12-21 MX MX4482A patent/MX160049A/es unknown
- 1983-12-21 MX MX199861A patent/MX155562A/es unknown
- 1983-12-21 BR BR8307043A patent/BR8307043A/pt unknown
-
1986
- 1986-02-20 GB GB08604263A patent/GB2174242B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2538170A1 (fr) | 1984-06-22 |
| CH664861A5 (de) | 1988-03-31 |
| DE3345449C2 (enrdf_load_stackoverflow) | 1989-08-17 |
| IT1194526B (it) | 1988-09-22 |
| KR900004197B1 (ko) | 1990-06-18 |
| GB8604263D0 (en) | 1986-03-26 |
| GB2133641A (en) | 1984-07-25 |
| SE8306952D0 (sv) | 1983-12-15 |
| KR840007203A (ko) | 1984-12-05 |
| MX155562A (es) | 1988-03-25 |
| IL70462A (en) | 1987-09-16 |
| IT8324285A0 (it) | 1983-12-20 |
| DE3345449A1 (de) | 1984-07-12 |
| IT8324285A1 (it) | 1985-06-20 |
| FR2538170B1 (fr) | 1988-05-27 |
| NL8304376A (nl) | 1984-07-16 |
| GB2133641B (en) | 1986-10-22 |
| IL70462A0 (en) | 1984-03-30 |
| GB2174242A (en) | 1986-10-29 |
| BR8307043A (pt) | 1984-07-31 |
| SE8306952L (sv) | 1984-06-22 |
| GB8333998D0 (en) | 1984-02-01 |
| MX160049A (es) | 1989-11-13 |
| GB2174242B (en) | 1987-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |